2N7000 Preferred Device Small Signal MOSFET 200 mAmps, 60 Volts N-Channel TO-92 Features http://onsemi.com * Pb-Free Packages are Available* 200 mAMPS 60 VOLTS RDS(on) = 5 MAXIMUM RATINGS Rating Symbol Value Unit Drain Source Voltage VDSS 60 Vdc Drain-Gate Voltage (RGS = 1.0 M) VDGR 60 Vdc Gate-Source Voltage - Continuous - Non-repetitive (tp 50 s) VGS VGSM 20 40 ID 200 500 Drain Current - Continuous - Pulsed N-Channel D Vdc Vpk mAdc IDM Total Power Dissipation @ TC = 25C Derate above 25C PD 350 2.8 mW mW/C Operating and Storage Temperature Range TJ, Tstg -55 to +150 C G S MARKING DIAGRAM & PIN ASSIGNMENT TO-92 CASE 29 Style 22 THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Ambient Maximum Lead Temperature for Soldering Purposes, 1/16 from case for 10 seconds Symbol Max Unit RJA 357 C/W TL 300 12 2N7000 YWW 3 C 1 Source Y WW = Year = Work Week 3 Drain 2 Gate ORDERING INFORMATION See detailed ordering and
6 Pages, 57 KB2N7000/2N7002, VQ1000J/P, BS170 Vishay Siliconix N-Channel 60-V (D-S) MOSFET PRODUCT SUMMARY Part Number V(BR)DSS Min (V) 2N7000 2N7002 rDS(on) Max (W) VGS(th) (V) ID (A) 5 @ VGS = 10 V 0.8 to 3 0.2 7.5 @ VGS = 10 V 1 to 2.5 0.115 5.5 @ VGS = 10 V 0.8 to 2.5 0.225 VQ1000P 5.5 @ VGS = 10 V 0.8 to 2.5 0.225 BS170 5 @ VGS = 10 V 0.8 to 3 0.5 60 VQ1000J FEATURES BENEFITS APPLICATIONS D D D D D D D D D D D Direct Logic-Level Interface: TTL/CMOS D Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc. D Battery Operated Systems D Solid-State Relays Low On-Resistance: 2.5 W Low Threshold: 2.1 V Low Input Capacitance: 22 pF Fast Switching Speed: 7 ns Low Input and Output Leakage Low Offset Voltage Low-Voltage Operation Easily Driven Without Buffer High-Speed Circuits Low Error Voltage TO-226AA (TO-92) S TO-236 (SOT-23) 1 G G 1 3 2 S D D 2 3 Top View Top View Marking Code: 72wll 2N7000 72 = Part Number Code
5 Pages, 50 KBss Reference Guide (continued) Industry 2N6034 2N6076 2N6426 2N6427 2N6428 2N6428A 2N6515 2N6516 2N6517 2N6518 2N6519 2N6520 2N669B 2N6705 2N6707 2N6714 2N6715 2N6716 2N6717 2N6718 2N6719 2N6724 2N6725 2N6726 2N6727 2N6728 2N6729 2N696 2N697 2N699 2N699A 2N7000 2N7002 2N7008 2N7051 2N7053 2N706 2N706C 2N708 2N721A 2N722A 2N730 2N734 2N734A 2N735 2N735A 2N736 2N736A 2N736B 2N742 2N742A 2N744 2N744A 2N756A 2N757A 2N758A 2N758B 2N759A 2N759B 2N834A Fairchild Closest Equivalent TN6725A 2N6076 2N6426 2N6427 2N6428 2N6428A 2N6515 2N6516 2N6517 2N6518 2N6519 2N6520 TN3019A TN6705A TN6707A TN6714A TN6715A TN6716A TN6717A TN6718A TN6719A TN6725A TN6725A TN6726A TN6727A TN6728A TN6729A TN2219A TN2219A TN3019A TN3019A 2N7000 2N7002 2N7008 2N7051 2N7053 PN2369A PN2369A PN2369A PN2907 PN2907 PN2222A PN2484 PN2484 PN2484 PN2484 PN2484 PN2484 PN2484 PN2484 PN2484 PN2369A PN2369A PN2484 PN2484 PN2484 PN2484 PN2484 PN2484 PN2369A Industry 2N847 2N858 2N859 2N860 2N861 2N862 2N863 2N864 2N864A 2N
55 Pages, 404 KB2N7000 Vishay Semiconductors formerly General Semiconductor DMOS Transistor (N-Channel) TO-226AA (TO-92) 0.142 (3.6) min. 0.492 (12.5) 0.181 (4.6) 0.181 (4.6) Features * * * * * * * * max. 0.022 (0.55) High input impedance Low gate threshold voltage Low drain-source ON-resistance High-speed switching No minority carrier storage time CMOS logic compatible input No thermal runaway No secondary breakdown Mechanical Data 0.098 (2.5) Dimensions in inches and (millimeters) Case: TO-92 Plastic Package Weight: approx. 0.18g Packaging Codes/Options: E7/4K per Ammo tape, 20K/box Bottom View Maximum Ratings and Thermal Characteristics Parameter (TA = 25C unless otherwise noted) Symbol Limit Unit Drain-Source Voltage VDSS 60 V Drain-Gate Voltage VDGS 60 V Gate-Source-Voltage VGS 20 V ID 300 mA IDM 1.3 A Drain Current (continuous) Peak Drain Current (pulsed) Power Dissipation at Tamb = 25C Thermal Resistance Junction to Ambient Air Ptot RJA (1) mW (1) C/W 830 150 J
5 Pages, 207 KBts Z8 Application Ideas 67 Figure 42. Phone Dialer Block Diagram Phone dialer device Telephone Phone Company AN004901-0900 Red Wire (tip) Customer phone jack Green Wire (ring) 100k 100nF J3 .1F C6 R13 C7 10 9 8 7 6 5 4 3 2 D Q5 F 2N7000 G R10 100 J2 U2 RSO DS/RD IRQ/CP D0 D1 D2 D3 ESt St/GT VDD 1Meg R11 CNTRL3 L1 10mH 11 D Q3 F 2N7000 G C1 47F Out Com 1Meg R7 CNTRL2 In U4 LP2950CZ 470k R3 D1 Zener Red Wire (tip) C8 10mF 3.3V +V R4 12k R2 470k Q1A MPQ 3904 R8 470k 8 7 6 5 D3 MMSZ5 V1T1 U3 14 GND P02 P01 P00 VCC C3 .1F R1 1Meg Q4 2N 3904 R9 470k A0 A1 A2 GND P33 P32 P31 XTAL2 XTAL1 Z86E08 U1 VCC 3.3V +V 24LC01/02B WP SCL SDA P27 P26 P25 P24 P23 P22 P21 P20 Microprocessor sampling node 3.3V +V R16 2k 4 13 12 3 14 R15 2k 2 15 3.3V +V V3 1 17 16 16 3.3V Power Supply for uP and Memory C2 .1F 15 18 R17 374k C10 100nF 17 18 19 20 Green Wire (ring) D7 1N4002 D5 1N4
151 Pages, 1391 KB2N7000 SemiWell Semiconductor Logic N-Channel MOSFET Features Symbol RDS(on) (Max 5 )@VGS=10V { RDS(on) (Max 5.3 )@VGS=4.5V 3. Drain Gate Charge (Typical 0.5nC) Maximum Junction Temperature Range (150C) 2. Gate { { General Description 1. Source TO-92 This Power MOSFET is produced using planar DMOS technology. And this Power MOSFET is well suited for Battery switch, Load switch, Motor controller and other small signal switches. 1 2 3 Absolute Maximum Ratings Symbol VDSS ID Parameter Value Units Drain to Source Voltage 60 V Continuous Drain Current(@TA = 25C) 200 mA 500 mA IDM Drain Current Pulsed VGS Gate to Source Voltage 20 V Total Power Dissipation Single Operation (TA=25C) 0.4 W Total Power Dissipation Single Operation (TA=70C) 3.2 mW - 55 ~ 150 C 300 C PD TSTG, TJ TL (Note 1) Operating Junction Temperature & Storage Temperature Maximum Lead Temperature for soldering purpose, 1/8 from Case for 10 seconds. Thermal Characteristics Sym
6 Pages, 705 KBX 1-Wire DATA 100 W MOSFET D from PIOControl 10 M W Typ. Q R Q Ground Ground Channel Flip-Flop BUS MASTER CIRCUIT Figure 12 A) Open Drain VPUP VDD BUS MASTER DS5000 OR 8051EQUIVALENT Open Drain Port Pin RX TX 12V 10 k W 10 k W S 5 kW S D 2N7000 D D D PGM 2N7000 VP0300L OR VP0106N3 OR BSS110 S S 2N7000 470 pF to data connection of DS2406 Capacitor added to reduce coupling on data line due to programming signal switching The interface is reduced to the5k W pull-up resistor if one does not intend to program the EPROM cells. B) Standard TTL VDD BUS MASTER TTL-Equivalent Port Pins VPUP 12V (10 mA min.) 5 kW PROGRAMMING PULSE RX to data connection of DS2406 TX 5 kW The diode and programming circuit are not required if one does not intend to program the EPROM cells 18 of 31 DS2406 INITIALIZATION All transactions on the 1-Wire bus begin with an initialization sequence. The initialization sequence consists of a reset pulse transmitted by
31 Pages, 275 KB8/00 Digitally Controlled Voltage Reference 8 10 F 35V 0 - 25V @ 1A CAT522 Advanced Information APPLICATION CIRCUITS (Cont.) +5V 2.2K VDD VREF 4.7 A LM385-2.5 ISINK = 2 - 255 mA +15V DAC + +5V CONTROL & DATA 10K CAT522 OPT 505 1 mA steps 2N7000 - 10K 391W 39 1W DAC + 5 A steps 2N7000 - VREF L GND 5 meg 5 meg 3.9K 10K 10K - TIP 30 + -15V Current Sink with 4 Decades of Resolution +15V 51K + TIP 29 - 10K 10K +5V VDD VREF H 5 meg 5 meg 39 1W DAC 39 1W CONTROL & DATA - OPT 505 CAT522 5 meg DAC GND BS170P + 5 meg 1 mA steps 3.9K - VREF L BS170P 5 A steps + LM385-2.5 -15V ISOURCE = 2 - 255 mA Current Source with 4 Decades of Resolution 9 8/00 CAT522 Advanced Information ORDERING INFORMATION Prefix Device # Suffix CAT 522 J Optional Company ID Product Number Package P: PDIP J: SOIC I 2000/Reel Temperature Range Blank = Commercial (0C to +70C) I = Industrial (-40C to +85C) Notes: (1) The device used in the above examp
10 Pages, 70 KBt the LTC6255 output goes low when shutting down. 2s Rise Time Analog 1A Pulsed LED Current Driver VIN R1 9.76k R2 200 5V RUP 1M** + - 5V ILED = VIN * 200mA/V 5V SHDN LTC6255 LED OSRAM LRW5SM ILED R4 51 C1 220pF Q1 Q2 Q3 Q1 TO Q3 MOSFETs 3x 2N7000 RSD 100k* R5 240 * RSD GUARANTEES LED OFF WHEN OP AMP SHDN. OTHERWISE OPTIONAL. ** RUP FORCES LED COMPLETELY OFF WHEN VIN = 0. OTHERWISE OPTIONAL. STANDBY SUPPLY CURRENT WITH VIN = 0: 65A RUP OPEN 650A RUP INSTALLED 10% TO 90% RISE TIME: 10mA TO 1A, 2s 0mA TO 1A, ADD 2.7s DELAY R3 0.1 100mW 625567 F06 Figure 6. LTC6255 Applied as a LED Current Driver with 2s Rise Time VIN 10mA TO 1A 0mA TO 1A (EXTRA DELAY) 625567 F07 Figure 7. Time Domain Response Showing 2s Rise Time. Top Waveform Is VIN. Middle Waveform Is the 10mA to 1A Step Measured at R3, then the 0mA to 1A Step Showing Extra 2.7s Delay When Recovering From 0mA 16 625567fd For more information www.linear.com/LTC6255 LTC6255/LTC6256/LTC6257 Package Description Please ref
26 Pages, 526 KB C6 CAP 0.1u W83791D SMI#/LEDOUT function circuit 5VSB 3VCC R20 R 4.7K R? 270 R? 1K 5VSB D? 220K/ 791D R LED BEEP ADRMSELIN VCC IA2 IA1 IA0 R41 R42 R43 0 0 0 R R R R40 R 510 R21 R 4.7K { OVT# R129 0 THRM# EXTSMI# LED R130 Q? MOSFET N 2N7000 2 U7A SMI# R131 1 0/791d,B SMI# 0/791d,B 7404 /791d, B !!Only for 791D ver B. BUZZER Set A2-A0 as bit2, bit1, bit0 of 7 bit I2C address setting 0/782D CASEOPEN GNDD VDD TO CHIPSET R38 R 100 0: means CPU is present 1: means CPU is absent MR# FAN1IN FAN2IN FAN3IN CAP 10u R34 VCC (From PII/PIII CPU) R 0/791D R19 Beep Circuits ADRMSELIN R35 R36 R37 R28 R27 Select one of the two setting.(FOR 782D) SA2 SA1 SA0 VREF VTIN3/PIITD3 VTIN2/PIITD2 VTIN1/PIITD1 VID0 OVT# IRQ/GPIO10 SMI#/LEDOUT EVNTRAP1/GPIO5 EVNTRAP2/GPIO6/FANIN4 EVNTRAP3/GPIO7/FANIN5 EVNTRAP4/GPIO8/PWMOUT4 R25 0/791D (EVNT4) R26 R 0/791D (FAN) PWMOUT4 Set A2-A0 as 3 lowest order bits of ISA address bus U1 1 2 3 4 5 6 7 8 9 10 11 12 EVNT3/A0 3VSB 0/
99 Pages, 848 KB2N7000 / 2N7002 / NDS7002A N-Channel Enhancement Mode Field Effect Transistor General Description Features High density cell design for low RDS(ON). These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. They can be used in most applications requiring up to 400mA DC and can deliver pulsed currents up to 2A. These products are particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications. Voltage controlled small signal switch. Rugged and reliable. High saturation current capability. ___________________________________________________________________________________________ D G D G S TO-92 S 2N7000 (TO-236AB) 2N7002/NDS7002A Absolute Maximum Ratings TA = 25C unless other
10 Pages, 218 KB2N7000 2N7002 N-channel 60 V, 1.8 , 0.35 A, SOT23-3L, TO-92 STripFETTM Power MOSFET Features Type VDSS RDS(on) max ID 2N7000 60 V < 5 (@10V) 0.35 A 2N7002 60 V < 5 (@10V) 0.20 A 3 2 1 Low Qg Low threshold drive SOT23-3L TO-92 Application Switching applications Description This Power MOSFET is the second generation of STMicroelectronics unique "single feature size" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. Figure 1. Internal schematic diagram SOT23-3L Table 1. TO-92 Device summary Order codes Marking Package Packaging 2N7000 2N7000G TO-92 Bulk 2N7002 ST2N SOT23-3L Tape and reel November 2008 Rev 9 1/14 www.st.com 14 Contents 2N7000, 2N7002 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . .
14 Pages, 633 KB2N7000 N-Channel Enhancement-Mode Vertical DMOS FETs Features General Description The Supertex 2N7000 is an enhancement-mode (normallyoff) transistor that utilizes a vertical DMOS structure and Supertex's well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors, and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Free from secondary breakdown Low power drive requirement Ease of paralleling Low CISS and fast switching speeds Excellent thermal stability Integral source-drain diode High input impedance and high gain Complementary N- and P-Channel devices Applications Supertex's vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown volta
5 Pages, 435 KB2N7000 Preferred Device Small Signal MOSFET 200 mAmps, 60 Volts N-Channel TO-92 MAXIMUM RATINGS Rating http://onsemi.com Symbol Value Unit Drain Source Voltage VDSS 60 Vdc Drain-Gate Voltage (RGS = 1.0 M) VDGR 60 Vdc Gate-Source Voltage - Continuous - Non-repetitive (tp 50 s) VGS VGSM 20 40 Vdc Vpk ID IDM 200 500 PD 350 2.8 mW mW/C TJ, Tstg -55 to +150 C Symbol Max Unit RJA 357 C/W TL 300 C Drain Current - Continuous - Pulsed Total Power Dissipation @ TC = 25C Derate above 25C Operating and Storage Temperature Range 200 mAMPS 60 VOLTS RDS(on) = 5 N-Channel D mAdc G S THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Ambient Maximum Lead Temperature for Soldering Purposes, 1/16 from case for 10 seconds TO-92 CASE 29 Style 22 12 3 MARKING DIAGRAM & PIN ASSIGNMENT 2N7000 YWW 1 Source 3 Drain 2 Gate Y WW = Year = Work Week ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions sect
4 Pages, 55 KBble 4, first row, parameters APD0, APDR, MS and IDLE. If assembly language is not an option and an UART is available, a circuit as in Figure 5 should be used. Minimum Microcontroller Interface Figure 6 VCC 5V R2 1100 R1 100 READ APD To 1-Wire net Q1 2N7000 The improved interface of Figure 7 is essentially the same as in Figure 6. The main difference is the transistor Q2 that allows faster recharging of the 1-Wire net by supplementing weak pull-up resistor R4. For this reason this circuit can work with larger networks. Since this circuit does not control the edges of the 1-Wire signals it should not be used beyond 100 meters. As before, the microcontroller is in charge of correctly activating Q1 for writing and Q2 for active pull-up. Reading is the same as with the previous circuit. For the recommended timing see Table 4, first two rows, parameters APD0, APU, APDR, MS and IDLE. Improved Microcontroller Interface Figure 7 APU Q2 BSS84 VCC 5V R4 1100 R2 22 R1 82 READ To Cable APD Q1 <
11 Pages, 80 KB2N7000 / 2N7002 / NDS7002A N-Channel Enhancement Mode Field Effect Transistor General Description Features High density cell design for low RDS(ON). These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. They can be used in most applications requiring up to 400mA DC and can deliver pulsed currents up to 2A. These products are particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications. Voltage controlled small signal switch. Rugged and reliable. High saturation current capability. ___________________________________________________________________________________________ D G D G S TO-92 S 2N7000 (TO-236AB) 2N7002/NDS7002A Absolute Maximum Ratings TA = 25C unless other
14 Pages, 497 KB2N7000/2N7002, VQ1000J/P, BS170 Vishay Siliconix N-Channel 60-V (D-S) MOSFET PRODUCT SUMMARY Part Number V(BR)DSS Min (V) 2N7000 2N7002 rDS(on) Max (W) VGS(th) (V) ID (A) 5 @ VGS = 10 V 0.8 to 3 0.2 7.5 @ VGS = 10 V 1 to 2.5 0.115 5.5 @ VGS = 10 V 0.8 to 2.5 0.225 VQ1000P 5.5 @ VGS = 10 V 0.8 to 2.5 0.225 BS170 5 @ VGS = 10 V 0.8 to 3 0.5 60 VQ1000J FEATURES BENEFITS APPLICATIONS D D D D D D D D D D D Direct Logic-Level Interface: TTL/CMOS D Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc. D Battery Operated Systems D Solid-State Relays Low On-Resistance: 2.5 W Low Threshold: 2.1 V Low Input Capacitance: 22 pF Fast Switching Speed: 7 ns Low Input and Output Leakage Low Offset Voltage Low-Voltage Operation Easily Driven Without Buffer High-Speed Circuits Low Error Voltage TO-226AA (TO-92) S TO-236 (SOT-23) 1 G G 1 3 2 S D D 2 3 Top View Top View Marking Code: 72wll 2N7000 72 = Part Number Code
6 Pages, 61 KB2 FDP2570 FDP2572 APEC AP80N03S AP85L02H AP85L02J AP85L02P AP85L02S AP90N03P AP90N03S AP9926M STB85NF3LLT4 STD90NH02LT4 STD95NH02L-1 STP90NF03L STB100NH02LT4 STP80NF03L STB80NF03L-04T4 STS6NF20V STW29NK50ZD STW20NM50FD AUK STK630F IRF630FP Fairchild 2N7000BU/TA 2N7002 BS170 BS270 BUZ11 BUZ71 BUZ71A BUZ72A FCP11N60 FCPF11N60 FDB045AN08A0 FDB10AN06A0 FDB13AN06A0 FDB14AN06LA0 FDB2552 FDB2570 FDB2572 FDB3632 FDB3652 FDB3672 FDB3682 FDB4030L FDB42AN15A0 FDB5645 FDB5680 FDB5690 FDB6030BL FDB6030L FDB6035AL FDB6035L FDB603AL FDB6644 FDB6670AL FDB6676 FDB7030BL FDB7030L FDB7042L FDB7045L FDB8030L FDB8870 FDB8874 FDB8896 FDC634P FDC636P FDC638P FDC640P FDC642P 4 2N7000 2N7000 STP36NF06 STP16NF06 STP16NF06 STP16NK60Z STB60NF06LT4 STB60NF06LT4 STB40NS15T4 STB120NF10T4 STB80NF10T4 STB40NF10T4 STB35NF10T4 STB55NF06T4 STB45NF06T4 STB45NF3LLT4 STB45NF3LLT4 STB70NH03LT4 STB45NF3LLT4 ST nearest Fairchild APT APT5017BVFR Direct 2N7002 2N7000 STP20NF06L STP14NF1
36 Pages, 584 KB Reference Doc. No. 2004, Rev. B 10 F 35V Digitally Controlled Voltage Reference 8 0 - 25V @ 1A CAT522 APPLICATION CIRCUITS (Cont.) +5V 2.2K VDD VREFH 4.7 A LM385-2.5 ISINK = 2 - 255 mA +15V + DPP +5V CONTROL & DATA 10K CAT522 1 mA steps 2N7000 - 39 1W 10K 39 1W + DPP 5 A steps 2N7000 - VREFL GND 5M 5M 3.9K 10K 10K - TIP 30 + -15V Current Sink with 4 Decades of Resolution +15V 51K + TIP 29 - 10K 10K +5V VDD VREFH 5M 5M 39 1W DPP 39 1W CONTROL & DATA - CAT522 BS170P + 5M 5M 1 mA steps 3.9K DPP GND - VREFL BS170P 5 A steps + LM385-2.5 -15V ISOURCE = 2 - 255 mA Current Source with 4 Decades of Resolution 9 Doc. No. 2004, Rev. B CAT522 ORDERING INFORMATION Prefix Device # Suffix CAT 522 J Optional Company ID Product Number Package P: PDIP J: SOIC -TE13 I Tape & Reel TE13: 2000/Reel Temperature Range Blank = Commercial (0C to 70C) I = Industrial (-40C to 85C) Notes: (1) The device used in the above examp
82 Pages, 757 KBUF 63V 20% FB 4 OUT 8 VN12REF L3 5 GPWR 6 GND LM2594HVN-12 1 V5 1 7 1 2 3 4 5 6 330UH 0.5A 10% + D5 11DQ09 90V 2 J2 NOT ON/OFF JP6 C30 82UF 25V 20% VSNEG C C V5 R61 NS V5 V5 V5 L5 1UH 10A 10% K1 D6 D7 NS NS VSNEG HMUTE Q3 2N7000 2 R27 20K 0.25W 5% B R26 1M 0.25W 5% 1 3 Q4 2N7000 2 R41 1M 0.25W 5% 1 2 Q2 2N7000 2 7 5 3 3 8 1 6 + 3 Q5 2N3906 R28 100K 0.25W 5% 1 Q6 2N7000 2 C31 1UF 50V 20% 4 L4 1UH 10A 10% 1 2 3 4 5 6 7 8 1 GND_2 3 R29 100K 0.25W 5% C38 1000PF 500V 10% + J3 RELAY DPDT 8A/5V C32 NS C37 C33 1000PF NS 500V 10% C39 1000PF 500V 10% C36 1000PF 500V 10% C34 22UF 100V 20% B 6-Terminals GND_1 This ground should be located as close to chassis wall as possible. C35 22UF 100V 20% + OUT2 A A OUT1 Title EB-TA0102 2CH AUDIO AMPLIFIER BOARD Size B Date: 5 4 3 2 Document Number EB-TA0102 Tuesday, January 16, 2001 Rev 3.3F3 Sheet 1 3 of 3 Bill Of Materials for EB-TA0102 Revision
18 Pages, 636 KB2N7000 N-Channel Enhancement-Mode Vertical DMOS FETs Features General Description Free from secondary breakdown Low power drive requirement Ease of paralleling Low CISS and fast switching speeds Excellent thermal stability Integral source-drain diode High input impedance and high gain The Supertex 2N7000 is an enhancement-mode (normallyoff) transistor that utilizes a vertical DMOS structure and Supertex's well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors, and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Applications Supertex's vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitanc
5 Pages, 631 KB2N7000 2N7002 N-CHANNEL 60V - 1.8 - 0.35A SOT23-3L - TO-92 STripFETTMII MOSFET TYPE VDSS RDS(on) ID 60 V 60 V < 5 (@ 10V) < 5 (@ 10V) 0.35 A 0.20 A 2N7000 2N7002 2 TYPICAL RDS(on) = 1.8 @10V LOW Qg LOW THRESHOLD DRIVE 3 1 SOT23-3L DESCRIPTION This MOSFET is the second generation of STMicroelectronics unique "Single Feature SizeTM" stripbased process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. TO-92 INTERNAL SCHEMATIC DIAGRAM APPLICATIONS HIGH SWITCHING APPLICATIONS SOT23-3L TO-92 ORDER CODE PART NUMBER MARKING PACKAGE PACKAGING 2N7000 2N7000G TO-92 BULK 2N7002 ST2N SOT23-3L TAPE & REEL April 2004 1/10 2N7000 - 2N7002 ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value TO-92 VDS VDGR VGS ID IDM () PTOT Unit STO23-3L Drain-source Voltage (VGS = 0)
10 Pages, 219 KB2N7000/2N7002, VQ1000J/P, BS170 Vishay Siliconix N-Channel 60-V (D-S) MOSFET PRODUCT SUMMARY Part Number V(BR)DSS Min (V) 2N7000 2N7002 rDS(on) Max (W) VGS(th) (V) ID (A) 5 @ VGS = 10 V 0.8 to 3 0.2 7.5 @ VGS = 10 V 1 to 2.5 0.115 5.5 @ VGS = 10 V 0.8 to 2.5 0.225 VQ1000P 5.5 @ VGS = 10 V 0.8 to 2.5 0.225 BS170 5 @ VGS = 10 V 0.8 to 3 0.5 60 VQ1000J FEATURES BENEFITS APPLICATIONS D D D D D D D D D D D Direct Logic-Level Interface: TTL/CMOS D Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc. D Battery Operated Systems D Solid-State Relays Low On-Resistance: 2.5 W Low Threshold: 2.1 V Low Input Capacitance: 22 pF Fast Switching Speed: 7 ns Low Input and Output Leakage Low Offset Voltage Low-Voltage Operation Easily Driven Without Buffer High-Speed Circuits Low Error Voltage TO-226AA (TO-92) S TO-236 (SOT-23) 1 G G 1 3 2 S D D 2 3 Top View Top View Marking Code: 72wll 2N7000 72 = Part Number Code
6 Pages, 79 KBbe connected to R1. If only a higher supply voltage than 5V is available, any monolithic or discrete positive 5V regulator can be used to provide the pullup voltage for the 1-Wire bus. The characteristics of the components are not critical. The transistor 2N7000 has been chosen since it is a very common product and has a low threshold voltage. If desired, a small signal bipolar transistor or any available open-drain or open-collector inverting driver can be used instead of Q1. If Q1 is an npntransistor, a resistor bypassed by a small capacitor between the TX-input and the base terminal is required to limit the input current. The logic level high at TX will produce a low on the 1-Wire bus. To generate a write-1 or read-data time slot, a short high pulse (1 s < t < 15 s) must be applied to the TX input. A write-0 time slot is formed by a 60 s high pulse at TX. Data from iButtons is received in its true form. If idle, TX must be held at a logic low level. The reference pulse train and other relevant
39 Pages, 581 KB2N7000 N-Channel Enhancement-Mode Vertical DMOS FETs Features General Description The Supertex 2N7000 is an enhancement-mode (normallyoff) transistor that utilizes a vertical DMOS structure and Supertex's well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors, and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Free from secondary breakdown Low power drive requirement Ease of paralleling Low CISS and fast switching speeds Excellent thermal stability Integral source-drain diode High input impedance and high gain Complementary N- and P-Channel devices Applications Supertex's vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown volta
6 Pages, 647 KBs that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 2N7000 / 2N7002 / NDS7002A N-Channel Enhancement Mode Field Effect Transistor Features Description * * * * These N-channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance while providing rugged, reliable, and fast switching performance. They can be used in most applications requiring up to 400 mA DC and can deliver pulsed currents up to 2 A. These products are particularly suited for low-voltage, low-current applications, such as small servo motor control, power MOSFET gate drivers, and other switching applications. High Density Cell Design for Low RDS(ON) Voltage Controlled Small Signal Switch Rugged an
13 Pages, 484 KB2N7000 / 2N7002 / NDS7002A N-Channel Enhancement Mode Field Effect Transistor General Description Features High density cell design for low RDS(ON). These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. They can be used in most applications requiring up to 400mA DC and can deliver pulsed currents up to 2A. These products are particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications. Voltage controlled small signal switch. Rugged and reliable. High saturation current capability. ___________________________________________________________________________________________ D G D G S TO-92 S Absolute Maximum Ratings TA = 25C unless otherwise noted 2N7000 2N7002 NDS7002A
14 Pages, 509 KB2N7000 2N7000 N-Channel Enhancement Mode Field Effect Transistor N-Kanal Feldeffekt Transistor - Anreicherungstyp N N Version 2011-02-16 Power dissipation Verlustleistung 18 9 16 S GD 2 x 2.54 Dimensions - Mae [mm] 350 mW Plastic case Kunststoffgehause TO-92 (10D3) Weight approx. Gewicht ca. 0.18 g Plastic material has UL classification 94V-0 Gehausematerial UL94V-0 klassifiziert Standard packaging taped in ammo pack Standard Lieferform gegurtet in Ammo-Pack Maximum ratings (TA = 25C) Grenzwerte (TA = 25C) 2N7000 Drain-Source-voltage - Drain-Source-Spannung VDSS 60 V Drain-Gate-voltage - Drain-Gate-Spannung RGS 1 M VDGR 60 V Gate-Source-voltage - Gate-Source-Spannung dc tp < 50 s VGSS VGSS 20 V 40 V Power dissipation - Verlustleistung Ptot 350 mW Drain current continuos - Drainstrom (dc) Peak Drain current - Drain-Spitzenstrom ID IDM 200 mA 500 mA Operating Junction temperature - Sperrschichttemperatur Storage temperature - Lagerung
2 Pages, 103 KB !" DIM A B C D E G INCHES MIN .170 .170 .550 .010 .130 .096 DIMENSIONS MAX .190 .190 .590 .020 .160 .104 MM MIN 4.33 4.30 13.97 0.36 3.30 2.44 MAX 4.83 4.83 14.97 0.56 3.96 2.64 NOTE www.mccsemi.com 1 of 5 Revision: 5 2010/08/18 MCC 2N7000 TM Micro Commercial Components www.mccsemi.com Revision: 5 2 of 5 2010/08/18 MCC 2N7000 TM Micro Commercial Components www.mccsemi.com 3 of 5 Revision: 5 2010/08/18 MCC 2N7000 TM Micro Commercial Components www.mccsemi.com Revision: 5 4 of 5 2010/08/18 MCC TM Micro Commercial Components ***IMPORTANT NOTICE*** Micro Commercial Components Corp . reserves the right to make changes without further notice to any product herein to make corrections, modifications , enhancements , improvements , or other changes . Micro Commercial Components Corp . does not assume any liability a
5 Pages, 302 KBrence Digitally Controlled Voltage Reference 8 10 F 35V 0 - 25V @ 1A CAT523 Advance Information APPLICATION CIRCUITS (Cont.) +5V 2.2K VDD VREF 4.7 A LM385-2.5 ISINK = 2 - 255 mA +15V DAC + +5V CONTROL & DATA 10K OPT 504 CAT523 1 mA steps 2N7000 - 10K 391W 39 1W DAC + 5 A steps 2N7000 - VREF L GND 5 meg 5 meg 3.9K 10K 10K - TIP 30 + -15V Current Sink with 4 Decades of Resolution +15V 51K + TIP 29 - 10K 10K +5V VDD VREF H 5 meg 5 meg 39 1W DAC 39 1W CONTROL & DATA - OPT 504 CAT523 5 meg DAC GND BS170P + 5 meg 1 mA steps 3.9K - VREF L BS170P 5 A steps + LM385-2.5 -15V ISOURCE = 2 - 255 mA Current Source with 4 Decades of Resolution 9 CAT523 Advance Information ORDERING INFORMATION Prefix Device # Suffix CAT 523 J Optional Company ID Product Number Package P: PDIP J: SOIC I -TE13 Tape & Reel TE13: 2000/Reel Temperature Range Blank = Commercial (0C to +70C) I = Industrial (-40C to +85C) Notes: (1) The device used
10 Pages, 69 KB2N7000 / 2N7002 / NDS7002A N-Channel Enhancement Mode Field Effect Transistor General Description Features High density cell design for low RDS(ON). These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. They can be used in most applications requiring up to 400mA DC and can deliver pulsed currents up to 2A. These products are particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications. Voltage controlled small signal switch. Rugged and reliable. High saturation current capability. ___________________________________________________________________________________________ D G D G S TO-92 S 2N7000 (TO-236AB) 2N7002/NDS7002A Absolute Maximum Ratings TA = 25C unless other
7 Pages, 94 KB2N7000 / 2N7002 / NDS7002A N-Channel Enhancement Mode Field Effect Transistor General Description Features High density cell design for low RDS(ON). These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. They can be used in most applications requiring up to 400mA DC and can deliver pulsed currents up to 2A. These products are particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications. Voltage controlled small signal switch. Rugged and reliable. High saturation current capability. ___________________________________________________________________________________________ D G D G S TO-92 S 2N7000 (TO-236AB) 2N7002/NDS7002A Absolute Maximum Ratings TA = 25C unless other
7 Pages, 100 KB2N7000 / BS170L DESCRIPTION ORDERING INFORMATION The 2N7000 utilizes Calogic's vertical DMOS technology. The device is well suited for switching applications where BV of 60V and low on resistance (under 5 ohms) are required. The 2N7000 is housed in a plastic TO-92 package. Part Package 2N7000 BS170L X2N7000 Plastic TO-92 Plastic TO-92 Sorted Chips in Carriers Temperature Range -55oC to +150oC -55oC to +150oC -55oC to +150oC PIN CONFIGURATION 2N7000 3 3 1 SOURCE 2 GATE 3 DRAIN 2 1 TO-92 (TO-226AA) 2 BOTTOM VIEW 1 BS170L 1 3 1 DRAIN 2 GATE 3 SOURCE 2 3 1 2 1 2 BOTTOM VIEW CD5 PRODUCT SUMMARY V(BR)DSS (V) rDS(ON) () ID (A) 2N7000 60 5 0.2 BS170 60 5 0.5 P/N 3 2N7000 / BS170L CORPORATION ABSOLUTE MAXIMUM RATINGS (TA = 25oC unless otherwise specified) SYMBOL PARAMETERS LIMITS VDS Drain-Source Voltage 60 VGS Gate-Source Voltage 40 ID Continuous Drain Current UNITS V
2 Pages, 20 KB2N7000/2N7002/NDF7000A/NDS7002A N-Channel Enhancement Mode Field Effect Transistor General Description Features These n-channel enhancement mode field effect transistors are produced using National's very high cell density third generation DMOS technology. These products have been designed to minimize on-state resistance provide rugged and reliable performance and fast switching. They can be used, with a minimum of effort, in most applications requiring up to 400 mA DC and can deliver pulsed currents up to 2A. This product is particularly suited to low voltage, low current applications, such as small servo motor controls, power MOSFET gate drivers, and other switching applications. Y Y Y Y Y Efficient high density cell design approaching (3 million/in2) Voltage controlled small signal switch Rugged High saturation current Low RDS (ON) TL/G/11378 - 2 TL/G/11378-1 TO-92 7000 Series TO-236 AB (SOT-23) 7002 Series TL/G/11378 - 3 Absolute Maximum Ratings Symbol Parameter 2N7000
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10 Pages, 182 KB2N7000 DMOS Transistors (N-Channel) TO-92 FEATURES .142 (3.6) min. .492 (12.5) .181 (4.6) .181 (4.6) High input impedance Low gate threshold voltage Low drain-source ON resistance High-speed switching No minority carrier storage time CMOS logic compatible input No thermal runaway No secondary breakdown max. .022 (0.55) .098 (2.5) D S G Dimensions in inches and (millimeters) MECHANICAL DATA Case: TO-92 Plastic Package Weight: approx. 0.18 g MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 C ambient temperature unless otherwise specified Symbol Value Unit Drain-Source Voltage VDSS 60 V Drain-Gate Voltage VDGS 60 V Gate-Source Voltage (pulsed) VGS 20 V Drain Current (continuous) ID 300 mA Power Dissipation at Tamb = 25 C Ptot 8301) mW Junction Temperature Tj 150 C Storage Temperature Range TS -65 to +150 C 1) Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case. Inverse Diode Symbol Value Unit M
5 Pages, 250 KB2N7000 / 2N7002 / NDS7002A N-Channel Enhancement Mode Field Effect Transistor General Description Features High density cell design for low RDS(ON). These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. They can be used in most applications requiring up to 400mA DC and can deliver pulsed currents up to 2A. These products are particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications. Voltage controlled small signal switch. Rugged and reliable. High saturation current capability. ___________________________________________________________________________________________ D G D G S TO-92 S 2N7000 (TO-236AB) 2N7002/NDS7002A Absolute Maximum Ratings TA = 25C unless other
7 Pages, 79 KB2N7000/7002, VQ1000J/P, BS170 N-Channel Enhancement-Mode MOSFET Transistors Product Summary Part Number V(BR)DSS Min (V) rDS(on) Max () VGS(th) (V) 2N7000 5 @ VGS = 10 V 0.8 to 3 0.2 2N7002 7.5 @ VGS = 10 V 1 to 2.5 0.115 5.5 @ VGS = 10 V 0.8 to 2.5 0.225 VQ1000P 5.5 @ VGS = 10 V 0.8 to 2.5 0.225 BS170 5 @ VGS = 10 V 0.8 to 3 0.5 VQ1000J 60 ID (A) Features Benefits Applications Direct Logic-Level Interface: TTL/CMOS Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc. Battery Operated Systems Solid-State Relays Low On-Resistance: 2.5 Low Threshold: 2.1 V Low Input Capacitance: 22 pF Fast Switching Speed: 7 ns Low Input and Output Leakage Low Offset Voltage Low-Voltage Operation Easily Driven Without Buffer High-Speed Circuits Low Error Voltage TO-226AA (TO-92) S TO-236 (SOT-23) 1 G G 1 3 2 S D D 2 3 Top View Top View 2N7002 (72)* 2N7000 *Marking Code for TO-236 Dual-In-Line N N D1
6 Pages, 57 KB2N7000 / 2N7002 / NDS7002A N-Channel Enhancement Mode Field Effect Transistor General Description Features High density cell design for low RDS(ON). These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. They can be used in most applications requiring up to 400mA DC and can deliver pulsed currents up to 2A. These products are particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications. Voltage controlled small signal switch. Rugged and reliable. High saturation current capability. ___________________________________________________________________________________________ D G D G S TO-92 S 2N7000 (TO-236AB) 2N7002/NDS7002A Absolute Maximum Ratings TA = 25C unless other
14 Pages, 502 KB,R10,R12,R14,R15 R5 R3,R11,R13 R4 R45,R46,R6 R56,57 U2 U1 U3 Q1,Q2,Q4 Q3 K1 CON1,CON2,CON3,CON4 STANDOFF NUT screw terminal(horiz.) screw terminal screw TA2022 washer TA2022 screw 20KW, 1% 25KW 35KW 50KW 80KW 100KW 200KW 249KW,1% 6W;2W TA2022 LM358 LM339 2N7000 2N3906 DPDT RELAY 8A,24V 3/8"STANDOFF HEX 4-40 J9,J10 1/4" 4-40 NO. 4 FLAT 3/8" 4-40 P6.2W-2BK-ND LM358N-ND LM339N-ND 2N7000FS-ND 2N3906-ND PB297-ND 4801K-ND H616-ND 8190k-nd H342-ND H734-ND H781-ND (SMT 0805) (SMT 0805) (SMT 0805) (SMT 0805) (SMT 0805) (SMT 0805) (SMT 0805) (SMT 0805) (2W Thru-hole) Tripath Technology 8-Dip 14-Dip TO-92 TO-92 RTE24024F Keystone 8190 Note 1: Inductor selection is critical for optimal operation of the TA2022 as well as being an important component in over current protection and EMI containment. Tripath recommends the customer use a toroidal inductor for all applications with the TA2022. For typical applications we recommend the Micrometals T68-2 core or the American Cores (Amidon) T690-06.
14 Pages, 482 KB of the selected MOSFET. Figure 4. shows the power dissipation test circuit. CL and CU are the UGATE and LGATE load capacitors, respectively. The bootstrap capacitor value is 0.01F. PVCC Vin BOOT1 +5V OR +12V + UGATE1 0.01 uF +5V OR +12V CB VCB - 2N7000 UGATE1 +12V 1uF PHASE1 CU PHASE1 1uF PVCC LGATE1 33 2N7000 CL PWM1 LGATE1 0.01 uF PWM2 RT9602 2N7000 UGATE2 PGND CU PGND PHASE2 2N7000 LGATE2 33 GND Figure 3. Part of Bootstrap Circuit of RT9602 In practice, a low value capacitor CB will lead the overcharging that could damage the IC. Therefore to minimize the risk of overcharging and reducing the ripple on VCB, the bootstrap capacitor should not be smaller than 0.1F, and the larger the better. In general design, using 1F can provide better performance. At least one low-ESR capacitor should be used to provide good local de-coupling. Here, to adopt either a ceramic or tantalum capacitor is suitable. DS9602-02 November 2002 CL
14 Pages, 252 KBitch Rugged and Reliable High Saturation Current Capability D D S TO-92 1 1. Source 2. Gate 3. Drain G G SOT-23 (TO-236AB) S 2N7002/NDS7002A Ordering Information Part Number Marking Package Packing Method Min Order Qty / Immediate Pack Qty 2N7000 2N7000 TO-92 3L Bulk 10000 / 1000 2N7000-D74Z 2N7000 TO-92 3L Ammo 2000 / 2000 2N7000-D75Z 2N7000 TO-92 3L Tape and Reel 2000 / 2000 2N7000-D26Z 2N7000 TO-92 3L Tape and Reel 2000 / 2000 2N7002 702 SOT-23 3L Tape and Reel 3000 / 3000 NDS7002A 712 SOT-23 3L Tape and Reel 3000 / 3000 (c) 1998 Semiconductor Components Industries, LLC. October-2017, Rev. 3 Publication Order Number: NDS7002A/D 2N7000 / 2N7002 / NDS7002A -- N-Channel Enhancement Mode Field Effect Transistor 2N7000 / 2N7002 / NDS7002A N-Channel Enhancement Mode Field Effect Transistor Stresses exceeding the absolute maximum ratin
8 Pages, 591 KB2N7000 2N7002 N-channel 60V - 1.8 - 0.35A - SOT23-3L / TO-92 STripFETTM Power MOSFET Features Type VDSS RDS(on) ID 2N7000 60V <5 (@10V) 0.35 2N7002 60V <5 (@10V) 0.20 3 2 1 Low Qg Low threshold drive SOT23-3L TO-92 Application Switching applications Description This MOSFET is the second generation of STMicroelectronics unique "Single Feature SizeTM" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. Figure 1. Internal schematic diagram SOT23-3L Table 1. TO-92 Device summary Order codes Marking Package Packaging 2N7000 2N7000G TO-92 Bulk 2N7002 ST2N SOT23-3L Tape & reel September 2007 Rev 8 1/14 www.st.com 14 Contents 2N7000 - 2N7002 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
14 Pages, 338 KB2N7000/2N7002, VQ1000J/P, BS170 Vishay Siliconix N-Channel 60-V (D-S) MOSFET PRODUCT SUMMARY Part Number V(BR)DSS Min (V) 2N7000 2N7002 rDS(on) Max (W) VGS(th) (V) ID (A) 5 @ VGS = 10 V 0.8 to 3 0.2 7.5 @ VGS = 10 V 1 to 2.5 0.115 5.5 @ VGS = 10 V 0.8 to 2.5 0.225 VQ1000P 5.5 @ VGS = 10 V 0.8 to 2.5 0.225 BS170 5 @ VGS = 10 V 0.8 to 3 0.5 60 VQ1000J FEATURES BENEFITS APPLICATIONS D D D D D D D D D D D Direct Logic-Level Interface: TTL/CMOS D Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc. D Battery Operated Systems D Solid-State Relays Low On-Resistance: 2.5 W Low Threshold: 2.1 V Low Input Capacitance: 22 pF Fast Switching Speed: 7 ns Low Input and Output Leakage Low Offset Voltage Low-Voltage Operation Easily Driven Without Buffer High-Speed Circuits Low Error Voltage TO-226AA (TO-92) S TO-236 (SOT-23) 1 G G 1 3 2 S D D 2 3 Top View Top View Marking Code: 72wll 2N7000 72 = Part Number Code
7 Pages, 63 KBage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 255 NTUD01N02 . . . . . . . . . . . . . . . . . Power MOSFET 100 mAmps, 20 Volts Dual N-Channel SC-88 . . . . . . . . . . . . . . . . . . . 262 2N7000 . . . . . . . . . . . . . . . . . . . . . Small Signal MOSFET 200 mAmps, 60 Volts N-Channel TO-92 . . . . . . . . . . . . . . . . . . 264 2N7002LT1 . . . . . . . . . . . . . . . . . . Power MOSFET 115 mAmps, 60 Volts N-Channel SOT-23 . . . . . . . . . . . . . . . . . . . . . . 267 BS107 . . . . . . . . . . . . . . . . . . . . . . Small Signal MOSFET 250 mAmps, 200 Volts N-Channel TO-92 . . . . . . . . . . . . . . . . . 271 BS108 . . . . . . . . . . . . . . . . . . . . . . Small Signal MOSFET 250 mAmps, 200 Volts, Logic Level N-Channel TO-92 . . . . . . 275 BS170 . . . . . . . . . . . . . . . . . . . . . . Small Signal MOSFET 500 mAmps, 60 Volts N-Channel TO-92 . . . . . . . . . . . . . . . . . . 277 BSS123LT1 . . . . . . . . . . . . . . .
1422 Pages, 14160 KB2N7000 SemiWell Semiconductor Logic N-Channel MOSFET Features Symbol RDS(on) (Max 5 )@VGS=10V { RDS(on) (Max 5.3 )@VGS=4.5V 3. Drain Gate Charge (Typical 0.5nC) Maximum Junction Temperature Range (150C) 2. Gate { { General Description 1. Source TO-92 This Power MOSFET is produced using planar DMOS technology. And this Power MOSFET is well suited for Battery switch, Load switch, Motor controller and other small signal switches. 1 2 3 Absolute Maximum Ratings Symbol VDSS ID Parameter Value Units Drain to Source Voltage 60 V Continuous Drain Current(@TA = 25C) 200 mA 500 mA IDM Drain Current Pulsed VGS Gate to Source Voltage 20 V Total Power Dissipation Single Operation (TA=25C) 0.4 W Total Power Dissipation Single Operation (TA=70C) 3.2 mW - 55 ~ 150 C 300 C PD TSTG, TJ TL (Note 1) Operating Junction Temperature & Storage Temperature Maximum Lead Temperature for soldering purpose, 1/8 from Case for 10 seconds. Thermal Characteristics Sym
6 Pages, 681 KBto obtain the best possible voltage regulation. Unfortunately, such a connection could lead to a Bus-Side overvoltage during the time the MOSFET is being turned-on (or turned off). An intelligent voltage-sensing scheme overcomes this dilemma (Figure 10). 2N7000 +SENSE 3M 9 R1 200 9 1M 9 V OUT RS 41 V I1 37 32 CB1 V GA TE 1 Note: This example of switching the +Sense lead was tested using a 5V supply. When used with lower voltage supplies, the resistor values must be altered to prevent the 2N7000 from turning on before the power MOSFET is fully enhanced. Increase the 1M9 resistor according to this ratio: Eq 5: 1N4148 V IN The gate drive voltage (VGATE1) is used to turn on the 2N7000 small signal MOSFET thereby connecting the +Sense lead to the Card-Side after the power MOSFET is fully enhanced. The 1N4148 is used to quickly shut-off the 2N7000 when a fault occurs. Without it, the 2N7000 may remain enhanced long enough for the power su
6 Pages, 1677 KB 10 2.5 3.0 3.0 2.5 2.0 3.0 2.5 2.5 2.0 3.0 60 60 60 60 240 200 60 60 240 200 100 60 25(1) 60 125 60(1) 50 60 125 60(1) 25 5.0 3.0(1) 5.0 20 6.0(1) 5.0 5.0 20 6.0(1) 30 10 10 10 8.0 15 20 10 8.0 15 Case 29-04 -- TO-226AA (TO-92) -- N-Channel VN0300L 2N7000 BS170 VN0610LL VN2406L BS107A 2N7008 VN2222LL VN2410L BS107 1.2 5.0 5.0 5.0 6.0 6.4 7.5 7.5 10 14 1.0 0.5 0.2 0.5 0.5 0.25 0.5 0.5 0.5 0.2 0.8 0.8 0.8 0.8 0.8 1.0 1.0 0.6 0.8 1.0 (1) Typical Devices listed in bold, italic are Motorola preferred devices. Selector Guide 1-20 Motorola Small-Signal Transistors, FETs and Diodes Device Data Surface Mount FETs 3 This section contains the FET plastic packages available for surface mount applications. Most of these devices are the most popular metal-can and insertion type parts carried over to the new surface mount packages. CASE 318-08 TO-236AB SOT-23 1 2 6 5 CASE 419-02 SC-70/SOT-323 4 4 1 2 3 CASE 419B-01 SOT-363 1 CASE 318E-04 SOT-223 2 3 Table 30. Surface Mount RF JFET
1354 Pages, 24604 KB2N7000 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR DISCONTINUED, FOR NEW DESIGN 2N700 USE A 2 E Features * * * * * * Efficient High Density Cell Design Approaching 3 Million Cells per Square Inch Voltage Controlled Small Signal Switch Rugged High Saturation Current Low RDS (ON) Fast Switching Speed TO-92 B C Mechanical Data * * * * * Case: TO-92, Plastic Leads: Solderable per MIL-STD-202, Method 208 Pin Connections: See Diagram Marking: Type Number Weight: 0.18 gram (approx.) Maximum Ratings Dim Min Max A 4.45 4.70 B 4.46 4.70 C 12.5 -- D 0.41 0.55 E 3.43 3.68 G 2.42 2.67 H 1.14 1.40 All Dimensions in mm D DG S BOTTOM VIEW H G H @ TA = 25C unless otherwise specified Symbol Value Units Drain-Source Voltage Characteristic VDSS 60 V Drain-Gate Voltage RGS 1.0MW VDGR 60 V Gate-Source Voltage (pulsed) VGSS 20 V ID 115 800 mA Pd 200 1.60 mW mW/C Drain Current Continuous Pulsed Total Power Dissipation Derating above TA = 25C Maximum
2 Pages, 69 KBre 7 RX Data 5 A Typ. TX 100 MOSFET Ground BUS MASTER CIRCUIT Figure 8 12V A) Open Drain VDD VDD BUS MASTER 10 k DS5000 OR 8051 EQUIVALENT 5 k Open Drain Port Pin S RX VP0300L OR VP0106N3 OR D BSS110 10 k S D To data connection of DS2502 2N7000 D TX D PGM 2N7000 470 pF S Capacitor added to reduce coupling on data line due to programming signal switching S 2N7000 VDD B) Standard TTL BUS MASTER VDD 5 k PROGRAMMING PULSE TTL-Equivalent Port Pins To data connection of DS2502 RX TX 5 k 020998 14/21 12V (10 mA min.) DS2502 ROM FUNCTIONS FLOW CHART Figure 9 MASTER TX RESET PULSE DS2502 TX PRESENCE PULSE MASTER TX ROM FUNCTION COMMAND 33h READ ROM COMMAND N 55h MATCH ROM COMMAND F0h SEARCH ROM COMMAND N Y Y Y N CCh SKIP ROM COMMAND N Y DS2502 TX BIT 0 DS2502 TX FAMILY CODE 1 BYTE MASTER TX BIT 0 DS2502 TX BIT 0 MASTER TX BIT 0 N BIT 0 MATCH? N BIT 0 MATCH? Y Y DS2502 TX SERIAL NUMBER 6 BYTES DS2502 TX CRC BYTE DS2502 T
21 Pages, 84 KB2N7000 MECHANICAL DATA Dimensions in mm (inches) N-CHANNEL ENHANCEMENT MODE MOS TRANSISTOR 0. 5 0. 4 0. 5 0. 4 1 FEATURES * V(BR)DSS = 60V 5 4. 0 * RDS(ON) = 5W 6. 2 4 .0 0. 4 * ID = 1A TO92 PACKAGE PIN 1 - Drain PIN 2 - Gate PIN 3 - Drain ABSOLUTE MAXIMUM RATINGS (TCASE = 25C unless otherwise stated) VDS Drain - Source Voltage 60V VGS Gate - Source Voltage 40V ID Drain Current 200mA IDM Pulsed Drain Current 500mA PD Power Dissipation @ TCASE = 25C Derate above 25C Tj,Tstg Operating and Storage Temperature Range TL Maximum Lead Temperature for Soldering Purposes, 400mW 3.2mW/C -55 to 150C 300C 1/16 from case for 10 seconds Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Prelim. 9/99 2N7000 ELECTRICAL CHARACTERISTICS (TCASE = 25C unless otherwise stated) Parameter Test Conditions STATIC CHARACTERISTICS Min. V(BR)DSS Gate - Source Breakdown Voltage VGS = 0V ID = 1
2 Pages, 17 KB2N7000 N-Channel Enhancement-Mode Vertical DMOS FET Ordering Information BVDSS / BVDGS RDS(ON) (max) ID(ON) (min) 60V 5.0 75mA Order Number / Package TO-92 2N7000 Features Advanced DMOS Technology Free from secondary breakdown These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex's well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally-induced secondary breakdown. Supertex's vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. Low power drive requirement Ease of paralleling Low CISS and fast switchin
4 Pages, 36 KB !" 2 $2 DIMENSIONS DIM A B C D E G INCHES MIN .175 .175 .500 .016 .135 .095 MAX .185 .185 --.020 .145 .105 MM MIN 4.45 4.46 12.7 0.41 3.43 2.42 MAX 4.70 4.70 --0.63 3.68 2.67 NOTE www.mccsemi.com Revision: 2 2003/04/30 2N7000 MCC www.mccsemi.com Revision: 2 2003/04/30 MCC 2N7000 www.mccsemi.com Revision: 2 2003/04/30 MCC 2N7000 www.mccsemi.com Revision: 2 2003/04/30
4 Pages, 775 KBTIC 6) LM340, AN7805 or equiv alent 5) Logic lev el compatible FET 1k R16 1k 1N5822 D5 (note 3) 1k R9 (note 1) R8 C6 1F SW1 C5 not R7 10k R14 (note 1) R15 R6 (note 1) 1k R13 2 +5V TP1 AUX1 C4 .047F (note 2) 1 ADJ OUT LM317 Q3 2N7000 3 C9 .1F C1 .047F +V +5V C7 100pF R10 15k C2 4.7F Q2 2N7000 R11 10k +5 V TP2 1) Values are determined by number of cells and actual charge current used ; see text f or details. Notes: 1 S1 2 D4 D2 S0 3 +5V C8 not used RESET GND GND GND GND (note 3) TS +BAT +CUR CHG CHG
7 Pages, 75 KB Reference Doc. No. 2005, Rev. E Digitally Controlled Voltage Reference 8 10 F 35V 0 - 25V @ 1A CAT523 APPLICATION CIRCUITS (Cont.) +5V 2.2K VDD VREFH 4.7 A LM385-2.5 ISINK = 2 - 255 mA +15V + DPP +5V CONTROL & DATA 10K CAT523 1 mA steps 2N7000 - 10K 391W 39 1W + DPP 5 A steps 2N7000 - VREFL GND 5 meg 5 meg 3.9K 10K 10K - TIP 30 + -15V Current Sink with 4 Decades of Resolution +15V 51K + TIP 29 - 10K 10K +5V VDD VREFH 5 meg 5 meg 39 1W DPP 39 1W CONTROL & DATA - CAT523 BS170P + 5 meg 5 meg 1 mA steps 3.9K DPP GND - VREFL BS170P 5 A steps + LM385-2.5 -15V ISOURCE = 2 - 255 mA Current Source with 4 Decades of Resolution 9 Doc. No. 2005, Rev. E CAT523 ORDERING INFORMATION Prefix Device # Suffix CAT 523 J Optional Company ID Product Number I Package P: PDIP J: SOIC L: PDIP (Lead free, Halogen free) W: SOIC (Lead free, Halogen free) -TE13 Tape & Reel TE13: 2000/Reel Temperature Range Blank = Commercial (0C to
Flip Flop). The flip-flop controls both the Enable signal, and the low power MOSFET gate. Please note that CMOS 4000series devices operate with a VCC range from 3 to 15 VDC, (with 18 VDC being the maximum allowable limit). A low power MOSFET, such as the 2N7000, in series with a resistor, will enable the IXFN100N20 gate voltage to drop gradually. The resistor should be chosen so that the RC time constant will be 100us, where "C" is the Miller capacitance of the IXFN100N20. The IXDD404 has the unique capability to softly switch off the high-power MOSFET module, significantly reducing these Ldi/dt transients. Thus, the IXDD404 helps to prevent device destruction from both dangers; over-current, and avalanche breakdown due to di/dt induced over-voltage transients. For resuming normal operation, a Reset signal is needed at the SRFF's input to enable the IXDD404 again. This Reset can be generated by connecting a One Shot circuit between the IXDD408 Input signal and the SRFF restart input. The One S
12 Pages, 356 KBs that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 2N7000 / 2N7002 / NDS7002A N-Channel Enhancement Mode Field Effect Transistor Features Description * * * * These N-channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance while providing rugged, reliable, and fast switching performance. They can be used in most applications requiring up to 400 mA DC and can deliver pulsed currents up to 2 A. These products are particularly suited for low-voltage, low-current applications, such as small servo motor control, power MOSFET gate drivers, and other switching applications. High Density Cell Design for Low RDS(ON) Voltage Controlled Small Signal Switch Rugged an
12 Pages, 453 KB2N7000 Power MOSFET N-CHANNEL ENHANCEMENT MODE DESCRIPTION The UTC 2N7000 has been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. It can be used in most applications requiring up to 400mA DC and can deliver pulsed currents up to 2A. The product is particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications 1 TO-92 FEATURES *High density cell design for low RDS(ON) *Voltage controlled small signal switch *Rugged and reliable *High saturation current capability SYMBOL ORDERING INFORMATION Ordering Number Package Lead Free Halogen Free 2N7000L-T92-B 2N7000G-T92-B TO-92 2N7000L-T92-K 2N7000G-T92-K TO-92 2N7000L-T92-R 2N7000G-T92-R TO-92 Note: Pin Assignment: G: Gate D: Drain S: Source www.unisonic.com.tw Copyright (c) 2011 Unisonic Technolo
5 Pages, 363 KBN429 X0.1 CR14 LTS-367P 10 9 8 5 4 2 3 7 A B C D E F G DP COMS 1 6 CR15 LTS-367P 10 9 8 5 4 2 3 7 A B C D E F G DP COMS 1 6 A B C D E F G DP COMS 1 6 16 15 14 13 12 11 10 9 1 2 3 4 5 6 7 8 CR1 CFM CR2 TEMP CR3 PSI CR4 SETPOINT VCC R17 10k 01 2N7000 R18 VCC R15 10k VCC R16 10k 02 2N7000 03 2N7000 04 2N7000 10k 28 100F C2 11 22pF C3 VCC R19 10k U1 87C752 VCC C1 X1 12MHz 22pF C4 + VCC 10F 10 9 24 23 6 7 8 19 VREF C6 100nF 18 12 VDD P3.7 XTAL1 P3.6 P3.5 P3.4 XTAL2 P3.3 P3.2 RST P3.1 P3.0 PWM P0.3 T0 P0.2 INT1 SDA INT0 SCL ADC4 ADC3 AVCC ADC2 ADC1 AVSS ADC0 VSS R9 4.7k P37 P36 P35 P34 P33 P32 P31 P30 25 26 27 1 2 3 4 5 R10 4.7k R13 10k KP100A UE UT 1 UP+ 2 UP- UG PSI 1N4148 PRESSURE SENSOR SETPOINT 05 2N7000 CR12 R14 10k 1N4148 VCC 4 3 2 1 J3 J3 J3 J3 VCC +8 VOLTS +8 VOLTS +8 VOLTS GROUND VCC R1 100 R2 IN+ V+ RG1 8 RG2 2 IN- 7 OUT 6 REF 5 V- 4 1k 6 100F FLOWMETER INPUT R3 C
19 Pages, 91 KB914 D1 7 6 4 8 3 7 1 6 4 +8.5 -8.5 8 3 1 R8 22 k 5% C4 0.01 F POLYPROP LF398A 5 U3 R7 22 k 5% C5 0.01 F POLYPROP LF398A 5 U1 +8.5 -8.5 C3 0.47 F 10 11 7 6 4 5 9 8 - + 4.7 5% - + 2 1 13 LM139A U2D LM139A U2B 2N7000 Q1 14 LM139A U2A R5 LM139A U2C Freescale Semiconductor, Inc... + - + + - 3-274 + C7 0.1 F +5 R10 9.09 k R9 1k PA0 PB1 PA1 U7 MC68HC11E9FN PA7 PA2 AN1318 Freescale Semiconductor, Inc. Figure 7. Single Slope A/D Converter Motorola Sensor Device Data Motorola Sensor Device Data www.motorola.com/semiconductors For More Information On This Product, Go to: www.freescale.com C1 1 F G I 2 3 O 200 R5 1.5 k 4 3 1 2 XDCR1 MPX2000 SERIES PRESSURE SENSOR ZERO CAL. R3 1 U1 MC78L08ACP * NOTE: FOR MPX2010, R8 = 75 OHMS GND B+ R4 7.5 k 11 U2B MC33274 6 - 7 5 + R8 120* 4 U2A MC33274 + 2 - 3 R2 820 10 - 9 + U2C MC33274 R1 1 k 8 R7 2 k U2D 12 MC33274 14 13 +- R6 2 k C2 0.1 F RT VIN + V S 8
670 Pages, 6331 KB Flip Flop). The flip-flop controls both the Enable signal, and the low power MOSFET gate. Please note that CMOS 4000series devices operate with a VCC range from 3 to 15 VDC, (with 18 VDC being the maximum allowable limit). A low power MOSFET, such as the 2N7000, in series with a resistor, will enable the VMO580-02F gate voltage to drop gradually. The resistor should be chosen so that the RC time constant will be 100us, where "C" is the Miller capacitance of the VMO580-02F. The IXDD414 has the unique capability to softly switch off the high-power MOSFET module, significantly reducing these Ldi/dt transients. For resuming normal operation, a Reset signal is needed at the SRFF's input to enable the IXDD414 again. This Reset can be generated by connecting a One Shot circuit between the IXDD414 Input signal and the SRFF restart input. The One Shot will create a pulse on the rise of the IXDD414 input, and this pulse will reset the SRFF outputs to normal operation. Thus, the IXDD414 helps to prevent
10 Pages, 242 KB2N7000 N-channel enhancement mode vertical D-MOS transistor Product specification File under Discrete Semiconductors, SC13b April 1995 Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor FEATURES 2N7000 QUICK REFERENCE DATA * Low RDS(on) SYMBOL * Direct interface to C-MOS, TTL, etc. VDS drain-source voltage ID * High-speed switching * No secondary breakdown. PARAMETER CONDITIONS MAX. 60 V drain current DC value 280 mA RDS(on) drain-source on-resistance ID = 500 mA VGS = 10 V 5 VGS(th) gate-source threshold voltage ID = 1 mA VGS = VDS 3 V DESCRIPTION N-channel enhancement mode vertical D-MOS transistor in a TO-92 variant envelope, intended for use in relay, high-speed and line transformer drivers. PIN CONFIGURATION PINNING - TO-92 VARIANT d handbook, halfpage PIN DESCRIPTION 1 drain 2 gate 3 source 1 2 3 g MAM146 s Fig.1 Simplified outline and symbol. April 1995 2 UNIT Philips Semicondu
12 Pages, 59 KB frequency and total gate charge of the selected MOSFET. Figure 4. shows the power dissipation test circuit. CL and CU are the UGATE and LGATE load capacitors, respectively. The bootstrap capacitor value is 0.01F. +5V or +12V 0.01uF +5V or +12V UGATE1 2N7000 1uF +12V CU PHASE1 LGATE1 1uF 2N7000 33 CL PVCC PWM1 Vin RT9602 0.01uF BOOT1 PWM2 UGATE2 + UGATE1 PHASE1 CB VCB - PVCC CU PGND PHASE2 GND LGATE1 2N7000 LGATE2 2N7000 33 CL PGND Figure 4. RT9602 Power Dissipation Test Circuit Figure 3. Part of Bootstrap Circuit of RT9602 www.richtek.com 8 Figure 5. shows the power dissipation of the RT9602 as a function of frequency and load capacitance. The value of the CU and CL are the same and the frequency is varied from 100kHz to 600kHz. PVCC and VCC is 12V and connected together. Figure 6.shows the same characterization for PVCC tied to 5V instead of 12V. DS9602-03 March 2004 RT9602 The method to improve the thermal transfer is to i
11 Pages, 138 KB Flip Flop). The flip-flop controls both the Enable signal, and the low power MOSFET gate. Please note that CMOS 4000series devices operate with a VCC range from 3 to 15 VDC, (with 18 VDC being the maximum allowable limit). A low power MOSFET, such as the 2N7000, in series with a resistor, will enable the VMO580-02F gate voltage to drop gradually. The resistor should be chosen so that the RC time constant will be 100us, where "C" is the Miller capacitance of the VMO580-02F. The IXDD414 has the unique capability to softly switch off the high-power MOSFET module, significantly reducing these Ldi/dt transients. For resuming normal operation, a Reset signal is needed at the SRFF's input to enable the IXDD414 again. This Reset can be generated by connecting a One Shot circuit between the IXDD414 Input signal and the SRFF restart input. The One Shot will create a pulse on the rise of the IXDD414 input, and this pulse will reset the SRFF outputs to normal operation. Thus, the IXDD414 helps to prevent
10 Pages, 340 KB0 k 10 k 0.1 pF Pa_buf 2-C2 1 R1 4.7 k 0.1 pF V_buf 2-F7 I_amp 2-C7 D1 1N914 AGND R3 24 SPEED VPP +5V 1 I 1 K J Q2 MPSA56 L 41 +5V 40 39 R13 38 10 k C7 0.1 pF 37 HALL_2 3-D3 36 35 R14 10 k +5V HALL_3 3-E4 R11 10 k R12 Q1 3 2N7000 2 820 2 3 1 +5_SWITCHED 4-D3 HALL_1 3-D3 34 33 Figure 2. Schematic AN1624 4 MOTOROLA Application Note Description Phase A 4-F4 R21 R22 2.49 k +5V +5V W2 INSERT WIRE FOR LEM SENSOR USE W3 INSERT WIRE FOR LEM SENSOR USE TP4 4.99 k Phase B 4-F4 R26 R27 2.49 k 4.99 k R23 TP5 R28 2.49 k MC33204 2.49 k G MC33204 5 + 7 6 -U2 C10 0.01 pF 3 Pa_buf 1-B3 + 1 2 -U2 C11 0.01 pF R24 AGND H Pb_buf 1-B3 R29 4.64 k AGND R25 4.64 k R30 2.21 k 2.21 k +5V Phase C 4-F4 R31 R32 2.49 k 4.99 k +5V TP6 R33 2.49 k +5V MC33204 4 + 14 13 -U2 11 12 MC33204 W4 INSERT WIRE FOR LEM SENSOR USE C12 0.01 pF + 10 U2 8 - 9 A Pc_buf 1-B3 R34 AGND 4.64 k R35 2.21 k Figure 3. Schematic (Sheet 1 of 2) AN1624 MO
32 Pages, 172 KB3404HV www.ti.com SNVS465E - OCTOBER 2006 - REVISED FEBRUARY 2010 LOW POWER SHUTDOWN The LM3404/04HV can be placed into a low power state (IIN-SD = 90 A) by grounding the RON pin with a signallevel MOSFET as shown in Figure 5. Low power MOSFETs like the 2N7000, 2N3904, or equivalent are recommended devices for putting the LM3404/04HV into low power shutdown. Logic gates can also be used to shut down the LM3404/04HV as long as the logic low voltage is below the over temperature minimum threshold of 0.3V. Noise filter circuitry on the RON pin can cause a few pulses with longer on-times than normal after RON is grounded or released. In these cases the OVP/OCP comparator will ensure that the peak inductor or LED current does not exceed 300 mV / RSNS. CB L1 VIN VIN BOOT SW RON CIN D1 RON IF LM3404/04HV ON/OFF CS Q1 2N7000 or equivalent RSNS DIM GND VCC CF Figure 5. Low Power Shutdown THERMAL SHUTDOWN Internal thermal shutdown circuitry is provided to protect the IC in the
37 Pages, 1303 KB2N7000 Preferred Device Small Signal MOSFET 200 mAmps, 60 Volts N-Channel TO-92 Features http://onsemi.com *AEC Qualified *PPAP Capable *Pb-Free Packages are Available* 200 mAMPS 60 VOLTS RDS(on) = 5 W N-Channel MAXIMUM RATINGS Rating D Symbol Value Unit Drain Source Voltage VDSS 60 Vdc Drain-Gate Voltage (RGS = 1.0 MW) VDGR 60 Vdc Gate-Source Voltage - Continuous - Non-repetitive (tp 50 ms) VGS VGSM 20 40 Vdc Vpk ID 200 500 Drain Current - Continuous - Pulsed S mAdc IDM Total Power Dissipation @ TC = 25C Derate above 25C PD 350 2.8 mW mW/C Operating and Storage Temperature Range TJ, Tstg -55 to +150 C TO-92 CASE 29 STYLE 22 1 12 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction-to-Ambient RqJA 357 C/W TL 300 C Maximum Lead Temperature for Soldering Purposes, 1/16 from case for 10 seconds G 3 STRAIGHT LEAD BULK PACK 2 3 BENT LEAD TAPE & REEL AMMO PACK MARKING DIAGRAM AND PIN ASSIGNMENT Stresses exceeding Maxim
4 Pages, 69 KB0UF 63V 20% FB 4 OUT 8 VN12REF L3 5 GPWR 6 GND LM2594HVN-12 1 V5 1 7 1 2 3 4 5 6 330UH 0.5A 10% + D5 11DQ09 90V 2 J2 NOT ON/OFF JP6 C30 82UF 25V 20% VSNEG C C V5 R61 NS V5 V5 V5 L5 1UH 10A 10% K1 D6 D7 NS NS VSNEG HMUTE Q3 2N7000 2 R27 20K 0.25W 5% B R26 1M 0.25W 5% 1 3 Q4 2N7000 2 R41 1M 0.25W 5% 1 2 Q2 2N7000 2 7 5 3 3 8 1 6 + 3 Q5 2N3906 R28 100K 0.25W 5% 1 Q6 2N7000 2 C31 1UF 50V 20% 4 L4 1UH 10A 10% 1 2 3 4 5 6 7 8 1 GND_2 3 R29 100K 0.25W 5% C38 1000PF 500V 10% + J3 RELAY DPDT C32 NS C37 C33 1000PF NS 500V 10% C39 1000PF 500V 10% C36 1000PF 500V 10% C34 22UF 100V 20% B 6-Terminals GND_1 This ground should be located as close to chassis wall as possible. C35 22UF 100V 20% + OUT2 A A OUT1 Title EB-TA0103 2CH AUDIO AMPLIFIER BOARD Size B Date: 5 4 3 2 Document Number EB-TA0103 Tuesday, January 16, 2001 Rev 3.3F3 Sheet 1 3 of 3 Bill Of Materials for EB-TA0103 Revision 7 1 2
18 Pages, 618 KB2N7000/D SEMICONDUCTOR TECHNICAL DATA N-Channel -- Enhancement Motorola Preferred Device 3 DRAIN 2 GATE 1 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain Source Voltage VDSS 60 Vdc Drain-Gate Voltage (RGS = 1.0 M) VDGR 60 Vdc Gate-Source Voltage -- Continuous -- Non-repetitive (tp 50 s) VGS VGSM 20 40 Vdc Vpk ID IDM 200 500 PD 350 2.8 mW mW/C TJ, Tstg - 55 to +150 C Symbol Max Unit RJA 357 C/W TL 300 C Drain Current Continuous Pulsed 1 2 3 CASE 29-04, STYLE 22 TO-92 (TO-226AA) mAdc Total Power Dissipation @ TC = 25C Derate above 25C Operating and Storage Temperature Range THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Ambient Maximum Lead Temperature for Soldering Purposes, 1/16 from case for 10 seconds ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic Symbol Min Max Unit V(BR)DSS 60 -- Vdc -- -- 1.0 1.0 Adc mAdc IGSSF -- -10 nAdc Gate Threshold Voltage (VDS = VGS, ID =
4 Pages, 58 KBFigure 6 RX DATA 5 A TYP. TX 100 MOSFET GROUND BUS MASTER CIRCUIT Figure 7 12V A) OPEN DRAIN VDD VDD BUS MASTER 10k DS5000 OR 8051 EQUIVALENT 10k 5k S D OPEN DRAIN PORT PIN S RX VP0300L OR VP0106N3 OR BSS110 D TO DATA CONNECTION OF DS2505 2N7000 D TX D PGM 2N7000 470 pF S CAPACITOR ADDED TO REDUCE COUPLING ON DATA LINE DUE TO PROGRAMMING SIGNAL SWITCHING S 2N7000 B) STANDARD TTL VDD BUS MASTER VDD TTL-EQUIVALENT PORT PINS 5k 12V (10 mA min.) PROGRAMMING PULSE TO DATA CONNECTION OF DS2505 RX TX 5k 020998 15/23 DS2505 ROM FUNCTIONS FLOW CHART Figure 8 MASTER TX RESET PULSE DS2505 TX PRESENCE PULSE MASTER TX ROM FUNCTION COMMAND 33h READ ROM COMMAND N 55h MATCH ROM COMMAND F0h SEARCH ROM COMMAND N Y Y Y DS2505 TX BIT 0 DS2505 TX FAMILY CODE 1 BYTE MASTER TX BIT 0 DS2505 TX BIT 0 MASTER TX BIT 0 N BIT 0 MATCH? N BIT 0 MATCH? Y Y DS2505 TX SERIAL NUMBER 6 BYTES DS2505 TX CRC BYTE DS2505 TX BIT 1 DS2505 TX BIT 1 MASTER TX BI
23 Pages, 96 KBss sense resistor R5, so the current load on the 48 V supply is monitored. U2 7 GND 8 9 SD C5 100 F 100 V HOST/ SYSTEM INTERFACE HOST_VDD 2 1 3 UVLO FLT 4 5 6 U1 1 R3 10 k, 1 W 2 3 4 SDFL IMAX VDD CT PL OUT SNS VSS 8 R7 100 k R1 Q2 1.0 M 2N7000 1% +SNS 19 VOUT+ 17 VOUT+ 16 VOUT+ 15 VOUT+ 14 ADJ 18 VOUT- 12 VOUT- 11 VOUT- 10 -SNS 13 +1.8VDC R17 0 C6 330 F 6.3 V PT3325 U3 6 7 5 8 UCC3921 2 C7 100 F 100 V C1 0.1F 1 3 4 C2 1.0F 5 C3 1.0 F VIN- VIN- VIN- 7 9 R2 13 k 1% VIN+ VIN+ VIN+ INH N/C N/C 6 R4 82 k R13 0 VIN+ VIN+ VIN+ INH N/C N/C VIN- VIN- VIN- +SNS 19 VOUT+ 17 VOUT+ 16 VOUT+ 15 VOUT+ 14 ADJ 18 VOUT- 12 VOUT- 11 VOUT- 10 -SNS 13 +2.5VDC C8 330 F 6.3 V LCLRTN PT3326 VIN- F1 D1 3 AG, 2 A MBR3100 -48VDC_N1 F2 D2 3 AG, 2 A MBR3100 -48VDC_N2 R5 0.025 1 W, 1% Q1 IRF530 Figure 1. Top-Level Schematic Diagram for -48 Vdc Hot Swap with DC/DC Conversion 6 A Power Management Interface Circuit for Telecom Hot Swap with Local DC/DC Conversion UDG-00143
35 Pages, 463 KBhe capacitance on the VSPEED signal would allow a soft start to occur when the DC brake signal is pulled low. VMIN 5V/12V SEL 25 5 VSPEED HA 24 6 RSPEED HC 23 7 VREF HB 22 15k ML4423 RSPEED CSOFTSTART 100k RBRAKE 1N5818 Q1 5F 4 Q2 2N7000 GND 17 ISENSE 16 14 COAST F/R 15 Q3 2N7000 100k 12 C0 13 CPWM 2N7000 1F 100k DC BRAKE Figure 7. DC Braking Circuit REV. 1.0 10/25/2000 3 Application Note 67 LOOP CHARACTERISTICS OPEN LOOP CONTROL Differential Observer Circuit The ML4423 can be forced to operate in an open loop configuration. In order to do this, the PWM outputs must be fed back to the SENSEA, SENSEB, and SENSEC inputs. Open loop control offers a softer response to load variations. The ML4423 will not respond to a higher motor current demand (by adjusting the PWM duty cycle), limiting the available power to the motor. The circuit in Figure 9 will allow observation of the differential motor voltages without tying up scope chan
19 Pages, 293 KBNTROL GROUND Q R Q GROUND CHANNEL FLIP-FLOP BUS MASTER CIRCUIT Figure 11 12V A) Open Drain VDD VPUP BUS MASTER 10k DS5000 OR 8051 EQUIVALENT 10k 5k S D Open Drain Port Pin S RX VP0300L OR VP0106N3 OR BSS110 D TO DATA CONNECTION OF DS2506 2N7000 D TX D PGM 2N7000 470 pF S CAPACITOR ADDED TO REDUCE COUPLING ON DATA LINE DUE TO PROGRAMMING SIGNAL SWITCHING S 2N7000 The interface is reduced to the 5k pull-up resistor if one does not intend to program the EPROM cells. B) Standard TTL VDD BUS MASTER VPUP 5k 12V (10 mA min.) PROGRAMMING PULSE TTL-Equivalent Port Pins TO DATA CONNECTION OF DS2507 RX TX 5k The diode and Programming Pulse circuit are not required if one does not intend to program the EPROM cells. 012099 20/31 DS2407 ROM FUNCTIONS FLOW CHART Figure 12 MASTER TX RESET PULSE DS2407 TX PRESENCE PULSE MASTER TX ROM FUNCTION COMMAND 33h READ ROM COMMAND N 55h MATCH ROM COMMAND F0h SEARCH ROM COMMAND N Y Y Y N ECh CONDITIONA
31 Pages, 129 KB2N7000 2N7000 TO-92, N IRF7203 FDS9435A 2N7002 2N7002 SOT-23, N IRF7204 NDS8434A SO-8, P BS170 BS170 TO-92, N IRF7205 FDS9435A SO-8, P Package SO-8, P BS270 BS270 TO-92, N IRF7206 FDS9435A SO-8, P BSS100 BSS100 TO-92, N IRF7301 FDS8926A SO-8, Dual N BSS110 BSS110 TO-92, P IRF7303 FDS6930A SO-8, Dual N BSS123 BSS123 SOT-23, N IRF7304 FDS8934A SO-8, Dual P BSS138 BSS138 SOT-23, N IRF7306 FDS8947A SO-8, Dual P BSS84 BSS84 SOT-23, P IRF7307 FDS8928A SO-8, Comp N/P IRF1010E NDP7061L TO-220, N IRF7309 FDS8958A SO-8, Comp N/P IRF1010N NDP7060L TO-220, N IRF7311 FDS8926A SO-8, Dual N IRF1104 NDP7052L TO-220, N IRF7313 FDS6912A SO-8, Dual N IRF1310N NDP710A TO-220, N IRF7314 FDS8934A SO-8, Dual P IRF1310S NDB710A TO-263, N IRF7316 FDS8947A SO-8, Dual P IRF2807 NDP708A TO-220, N IRF7317 FDS8928A SO-8, Comp N/P IRF2807S NDB408A TO-263, N IRF7319 FDS8958A SO-8, Comp N/P IRF3205 NDP7052L TO-220, N
7 Pages, 19 KB Flip Flop). The flip-flop controls both the Enable signal, and the low power MOSFET gate. Please note that CMOS 4000series devices operate with a VCC range from 3 to 15 VDC, (with 18 VDC being the maximum allowable limit). A low power MOSFET, such as the 2N7000, in series with a resistor, will enable the VMO580-02F gate voltage to drop gradually. The resistor should be chosen so that the RC time constant will be 100us, where "C" is the Miller capacitance of the VMO580-02F. The IXDD409 has the unique capability to softly switch off the high-power MOSFET module, significantly reducing these Ldi/dt transients. For resuming normal operation, a Reset signal is needed at the SRFF's input to enable the IXDD409 again. This Reset can be generated by connecting a One Shot circuit between the IXDD409 Input signal and the SRFF restart input. The One Shot will create a pulse on the rise of the IXDD409 input, and this pulse will reset the SRFF outputs to normal operation. Thus, the IXDD409 helps to prevent
10 Pages, 812 KB6 1k Si9120 C18 75 pF CR6 L2 13 mH 4 14 6 10 11 7 R7 2.4 W C6 120 pF C4 TO DC RTN C12 0.1 5 15 R2 390 k CR2 IN4148 R4 10 k C5 0.1 R5 15 k R3 10 k R9 20 CR7 IN4148 C15 2200 mF 6.3 V C16 0.1 C21 220 pF C17 220 mF 6.3 V R10 1k Q2 2N7000 R11 2k C7 1 mF C14 0.1 5V 80 mA FIGURE 10. 5-W Offline Flyback Converter Flyback Fundamentals The flyback circuit works by storing energy in the flyback inductor during the switch's on-time and releasing this energy to the secondary circuits during the switch's off-period. The power transformer, in the case of a flyback converter, is not a transformer at all. Transformers work by coupling energy from primary to secondary, storing as little energy as possible. The flyback, however, stores all the energy for one cycle of operation in what is properly an inductor. It is widely believed that current in an inductor cannot be changed instantaneously. This is not quite true. Ampere-turns are what cannot change instantaneously. If you c
13 Pages, 146 KB2N7000 / 2N7002 / NDS7002A N-Channel Enhancement Mode Field Effect Transistor General Description Features High density cell design for low RDS(ON). These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. They can be used in most applications requiring up to 400mA DC and can deliver pulsed currents up to 2A. These products are particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications. Voltage controlled small signal switch. Rugged and reliable. High saturation current capability. ___________________________________________________________________________________________ D G D G S S TO-92 Absolute Maximum Ratings TA = 25C unless otherwise noted 2N7000 2N7002 NDS7002A
14 Pages, 534 KB2N7000 N-channel enhancement mode field-effect transistor Rev. 03 -- 19 May 2000 Product specification 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOSTM1 technology. Product availability: 2N7000 in SOT54 (TO-92 variant). 2. Features TrenchMOSTM technology Very fast switching Logic level compatible. 3. Applications Relay driver High speed line driver Logic level translator. c c 4. Pinning information Table 1: Pinning - SOT54, simplified outline and symbol Pin Description 1 drain (d) 2 gate (g) 3 source (s) Simplified outline Symbol d g 03ab40 3 21 SOT54 (TO-92 variant) 1. TrenchMOS is a trademark of Royal Philips Electronics. s 03ab30 N-channel MOSFET 2N7000 Philips Semiconductors N-channel enhancement mode field-effect transistor 5. Quick reference data Table 2: Quick reference data Symbol Parameter Conditions Typ Max Unit Tj = 25 to 150 C - 60 V VDS drain-source voltage
13 Pages, 100 KBcy and total gate charge of the selected MOSFET. Figure 4. shows the power dissipation test circuit. CL and CU are the UGATE and LGATE load capacitors, respectively. The bootstrap capacitor value is 0.01F. +5V or +12V 0.01uF +5V or +12V UGATE1 1uF +12V 2N7000 CU PHASE1 LGATE1 1uF 2N7000 33 CL PVCC VIN PWM1 RT9602 0.01uF BOOT1 PWM2 + UGATE1 PHASE1 CB UGATE2 VCB - PVCC PGND PGND Figure 3. Part of Bootstrap Circuit of RT9602 CU PHASE2 GND LGATE1 2N7000 LGATE2 2N7000 33 CL Figure 4. RT9602 Power Dissipation Test Circuit Figure 5. shows the power dissipation of the RT9602 as a function of frequency and load capacitance. The value of the CU and CL are the same and the frequency is varied from 100kHz to 600kHz. PVCC and VCC is 12V and connected together. Figure 6.shows the same characterization for PVCC tied to 5V instead of 12V. www.richtek.com 8 DS9602-08 March 2007 RT9602 The method to improve the thermal transfer is to increase
11 Pages, 214 KBed board /CVR = populated board with regulator parts kit for user installation Device type: ICS1735 Evaluation Board 2 ICS1735EB ICS1735EB AND ICS1735EB/CVR SCHEMATIC DIAGRAM CHG U3 N7 LM317 OUT IN N3 +V N4 470 5W N6 U2 IN C9 .1uF N1 5V N1 Q3 2N7000 R1 0.0 N5 Q1 R2 0.0 +5V .51 2N3903 +V R16* + 1uF 35V 510 C6 * 500 N2 SD103A N2 ZD R3 0.0 1W +5V +BAT N3 N3 R8 * R4 1k R5 390 R18 D3 R6 * C4* +5V R12 * R9 TS 390 ICS1735 D4 * N2 N2 N1 N2 (jumper) Q2 2N7000 +CUR R14 * R13 3k C3 GND .047uF R17 * N1 R15 .75 2W ADJ N1 OUT ___ CHG D5 N1 1N5822 D2 D1 * 1 CHG 2 DCHG 3 PFN 4 MCN 5 FCN 6CLN 7CTSEL 8VSS 16 VDD 15 N/U 14 XREF1 13 XREF2 12 CLS 11 TENB 10 RC 9 MRN C1 .047uF +5V +5V 0.0 ohm N3 330k R7 GND TP1 AUX 1 * 3 2 1 N3 30k N3 68k GND +5V AUX 0 * 3 2 1 S0 1 2 3 CTSEL C5* N3 R10 24k +5V 1k + C2 4.7uF GND C7 100pF GND 3 2 1 S1 * 1 2 3 DTSEL (TENB) RESET S1 C8 * NOTES: N1. CVR Kit,user installs in locations provided
4 Pages, 67 KB689-VN0300L-G 689-TN0604N3-G 689-TN2504N8-G 689-TN0104N3-G 689-TN0104N8-G 689-VN0104N3-G 689-VN3205N3-G 689-VN3205N8-G 689-TN0606N3-G 689-TN2106K1-G 689-TN2106N3-G 689-TN0106N3-G 689-VN2222LL-G 689-VN0606L-G 689-VN0106N3-G 689-VN2106N3-G 689-VN10KN3-G 689-2N7000-G 689-2N7002-G 689-VN0808L-G 689-TN0610N3-G 689-TN2510N8-G 689-TN0110N3-G 689-VN2210N3-G 689-VN2110K1-G 689-VN1206L-G 689-TN0620N3-G 689-TD9944TG-G 689-TN2524N8-G 689-VN2406L-G (c) Copyright 2016 Mouser Electronics 748 Supertex Part No. TN2501N8-G TN0702N3-G VN0300L-G TN0604N3-G TN2504N8-G TN0104N3-G TN0104N8-G VN0104N3-G VN3205N3-G VN3205N8-G TN0606N3-G TN2106K1-G TN2106N3-G TN0106N3-G VN2222LL-G VN0606L-G VN0106N3-G VN2106N3-G VN10KN3-G 2N7000-G 2N7002-G VN0808L-G TN0610N3-G TN2510N8-G TN0110N3-G VN2210N3-G VN2110K1-G VN1206L-G TN0620N3-G TD9944TG-G TN2524N8-G VN2406L-G Package Type SOT-89-3 TO-92 TO-92 TO-92 SOT-89-3 TO-92 SOT-89-3 TO-92 TO-92 SOT-89-3 TO-92 SOT-23-3 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 SO
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