2N6725 w w w. c e n t r a l s e m i . c o m SILICON NPN DARLINGTON POWER TRANSISTORS DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6724 and 2N6725 are silicon NPN Darlington power transistors designed for amplifier applications. MARKING: FULL PART NUMBER TO-237 CASE MAXIMUM RATINGS: (TA=25C unless otherwise noted) SYMBOL Collector-Base Voltage VCBO Collector-Emitter Voltage VCEO Emitter-Base Voltage Continuous Collector Current Continuous Base Current Power Dissipation (TC=25C) Operating and Storage Junction Temperature Thermal Resistance ELECTRICAL SYMBOL ICBO ICBO CHARACTERISTICS: (TA=25C) TEST CONDITIONS VCB=30V VCB=40V IEBO BVCBO BVCES 2N6724 50 2N6725 60 40 VEBO IC 50 12 UNITS V V V 2.0 A IB PD 0.5 A 2.0 W TJ, Tstg JC -65 to +150 C 62.5 C/W 2N6724 MIN MAX 100 - - VEB=10V - IC=1.0A IC=1.0mA 50 BVEBO VCE(SAT) IE=10A IC=1.0A, IB=2.0mA VBE(ON) hFE VCE=5.0V, IC=1.0A VCE=5.0V, IC=200mA hFE fT VCE=5.0V, IC=1.0A VCE=5.0V, IC=200mA, f=100MHz Cob VCB=10V, IE=0, f=1.0MHz 2N67
2N6725 w w w. c e n t r a l s e m i . c o m SILICON NPN DARLINGTON POWER TRANSISTORS DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6724 and 2N6725 are silicon NPN Darlington power transistors designed for amplifier applications. MARKING: FULL PART NUMBER TO-237 CASE MAXIMUM RATINGS: (TA=25C unless otherwise noted) SYMBOL Collector-Base Voltage VCBO Collector-Emitter Voltage VCEO Emitter-Base Voltage Continuous Collector Current Continuous Base Current Power Dissipation (TC=25C) Operating and Storage Junction Temperature Thermal Resistance ELECTRICAL SYMBOL ICBO ICBO CHARACTERISTICS: (TA=25C) TEST CONDITIONS VCB=30V VCB=40V IEBO BVCBO BVCES 2N6724 50 2N6725 60 40 VEBO IC 50 12 UNITS V V V 2.0 A IB PD 0.5 A 2.0 W TJ, Tstg JC -65 to +150 C 62.5 C/W 2N6724 MIN MAX 100 - - VEB=10V - IC=1.0A IC=1.0mA 50 BVEBO VCE(SAT) IE=10A IC=1.0A, IB=2.0mA VBE(ON) hFE VCE=5.0V, IC=1.0A VCE=5.0V, IC=200mA hFE fT VCE=5.0V, IC=1.0A VCE=5.0V, IC=200mA, f=100MHz Cob VCB=10V, IE=0, f=1.0MHz 2N67
2N6725 w w w. c e n t r a l s e m i . c o m SILICON NPN DARLINGTON POWER TRANSISTORS DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6724 and 2N6725 are silicon NPN Darlington power transistors designed for amplifier applications. MARKING: FULL PART NUMBER TO-237 CASE MAXIMUM RATINGS: (TA=25C unless otherwise noted) SYMBOL Collector-Base Voltage VCBO Collector-Emitter Voltage VCEO Emitter-Base Voltage Continuous Collector Current Continuous Base Current Power Dissipation (TC=25C) Operating and Storage Junction Temperature Thermal Resistance ELECTRICAL SYMBOL ICBO ICBO CHARACTERISTICS: (TA=25C) TEST CONDITIONS VCB=30V VCB=40V IEBO BVCBO BVCES 2N6724 50 2N6725 60 40 VEBO IC 50 12 UNITS V V V 2.0 A IB PD 0.5 A 2.0 W TJ, Tstg JC -65 to +150 C 62.5 C/W 2N6724 MIN MAX 100 - - VEB=10V - IC=1.0A IC=1.0mA 50 BVEBO VCE(SAT) IE=10A IC=1.0A, IB=2.0mA VBE(ON) hFE VCE=5.0V, IC=1.0A VCE=5.0V, IC=200mA hFE fT VCE=5.0V, IC=1.0A VCE=5.0V, IC=200mA, f=100MHz Cob VCB=10V, IE=0, f=1.0MHz 2N67
2N6725/MPS6725 NATL SEMICOND OISCRETE L1E D ; 65011450 0037244 National Semiconductor . T-33-29 2N6724 MPS6724 2N6725 MPS6725 NPN Darlington Transistor Electrica! Characteristics 1, = 25c unless otherwise noted ob Symbol | Parameter Min Max Units OFF CHARACTERISTICS VieR)cEs Collector-Emitter Breakdown Voltage, (Note 1) (Ig = 1.0 mAdc, fp = 0) 2N6724/MPS6724 40 Vde 2N6725/MPS6725 50 V(eR}CBO Collector-Base Breakdown Voltage (I = 1.0 pAde, fe = 0) 2N6724/MPS6724 50 Vde 2N6725/MPS6725 60 V(BR)EBO Emitter-Base Breakdown Voltage 12 Vde (Ile = 10 pAde, Io = 0) Icgo Collector Cutoff Current (Vos = 30 Vde, Ie = 0) 2N6724/MPS6724 100 nAde (Vcg = 40 Vde, ie = 0) > 2N6725/MPS6725 100 lego Emitter Cutoff Current (Veg = 10 Vde, Ic = 0) 100 nAde ON CHARACTERISTICS (Note 1) hee DC Current Gain (I = 200 mAde, Vog = 5.0 Vdc) 25,000 {Ic = 1000 mAde, Vog = 5.0 Vde) 4,000 40,000 Voe(sat) Collector-Emitter Saturation Voltage 15 Vde (I = 1000 mAde, Ip = 2.0 mAdc) .
2N6725 FEATURES @ High gain 25000 @ 200mA ~4000 @1A @ 1 Amp current capability @ Low saturation voltages DESCRIPTION A monolithic double diffused planar power Plastic E-Line (TO-92 Compatible) Darlington encapsulated in the popular E-line (To-92 style) plastic package. The specially selected SILICONE encapsulation provides resistance to severe environments comparable to metal can devices. ABSOLUTE MAXIMUM RATINGS Parameter Symbol 2N6724 2N6725 Unit Collector-base voltage Vocpo 50 60 Vv Collector-emitter voltage Veceo 40 50 Vv Emitter-base voltage Vego 10 Vv Peak pulse current* lom 2 A Continuous collector current le 7 A Power dissipation at T,,,, = 25C Prot 1 Ww at Tease = 25C 2 Ww Operating & storage temp range -55 to +200 C *Pulse width = 300us. Duty cycle <2% SE195NPN 2N6724 2N6725 CHARACTERISTICS (at T,,,=25C unless otherwise stated). 2N26724 2N6725 . . Parameter Symbol - - Unit | Conditions Min. Max. Min. Max. Collector-base Vipriceo 50 60 Vv lo = 1pA b
2N6725/MPS6725 National Semiconductor 2N6724 MPS6724 2N6725 MPS6725 NPN Darlington Transistor Electrical Characteristics 1, = 25c unless otherwise noted Symbol | Parameter min | Max | Unita OFF CHARACTERISTICS ViBR)CES Collector-Emitter Breakdown Voltage, (Note 1) (Ig = 1.0 mAde, Ig = 0) 2N6724/MPS6724 40 Vde 2N6725/MPS6725 50 ViBR)CBO Collector-Base Breakdown Voltage (Ig = 1.0 pAdc, Ie = 0) 2N6724/MPS6724 50 Vde 2N6725/MPS6725 60 V(BR)EBO Emitter-Base Breakdown Voltage 12 Vde (lg = 10 pAde, Ic = 0) IcBo Collector Cutoff Current (Vog = 90 Vde, ig = 0) 2N6724/MPS6724 100 nade (Vcp = 40 Vde, le = 0) 2N6725/MPS6725 100 lego Emitter Cutoff Current (Veg = 10 Vdc, ic = 0) 100 nade ON CHARACTERISTICS (Note 1) Hee DC Current Gain (Ig = 200 mAdc, Vce = 5.0 Vde) 25,000 (Io = 1000 mAdc, VcgE = 5.0 Vdc) 4,000 40,000 VoE(sat) Collector-Emitter Saturation Voltage 15 Vde (Io = 1000 mAde, Ig = 2.0 mAdc) , VBE(on) Base-Emitter On Voltage 20 Vde (Ic = 1000 mAdc,
1787 2N4277 2SB819 2N1520 2N5686 2N5684 2SD1211 2N1522 2SC2383 2SC2705 2SA1013 2SC2565 2SA1095 2SC1034 2SC2581 2SB987 2SC2766 2SA1166 2SC2922 2SA1216 2SD1238 2SC2837 2SA1106 2SA1265N 2N6212 MJE350 2SC2259 2SA979 2SC1583 2SA798 2SC2297 2SA995 MPSA13 MPSA18 2N6725 D40E7 D41E7 2SC2929 MJ13071 2SC2965 BUY69B 2SB992 2SA1263 ECG54 2SD1237 ECG55 MJE15031 ECG56 ECG57 ECG58 ECG59 ECG60 ECG61 ECG62 ECG63 ECG64 ECG65 ECG66 MJE15028 KSD362 2SB823 2SC1983 2SC1664A 2SC2774 2SA1170 MJ15003 MJ15004 2SD621N MRF911 2SC2369 BFR90 BUZ71A 2SC2471 2SC2671 2SC2784 2N4278 2N4280 2N6213 BF472 2SC2291 MPSA14 BFS29 MPSA12 2SC3038 BUY69B 2SC3084 MJ13005 MJ13335 2N5261 BUS13 MJE15030 2SD961 2SB946 MJE15029 2SC1984 2SC2198 2SC2922 2SA1216 2N5631 2SD1052 2SD838 2SC2369 MRF901 BFR91 RCA9212A BUY71 BFQ85 BFR92 IRF533 532 BUZ10A ECG67 BUZ76A ECG68 ECG69 ECG71 ECG72 ECG73 ECG74 ECG75 ECG76 2N5947 ECG77 PT4610 ECG78 ECG79 ECG80 ECG81 2N2480A ECG82 2N4024 ECG83 ECG85 ECG86 ECG87 ECG88 ECG89 2SD870 IRF530 IRF612 613 2SK319 MJ15025 2S
2N6725 ISSUE 1 MARCH 94 FEATURES * 50 Volt VCEO * Gain of 15k at IC = 0.5 Amp * Ptot=1 Watt C B E E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Collector-Base Voltage VCBO 2N6724 2N6725 50 60 UNIT Collector-Emitter Voltage VCEO 40 50 Emitter-Base Voltage VEBO 10 V Peak Pulse Current ICM 2 A Continuous Collector Current IC 1 A Power Dissipation at Tamb = 25C Ptot 1 W Operating and Storage Temperature Range Tj:Tstg -55 to +200 C V V ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). PARAMETER SYMBOL 2N6724 Collector-Base Breakdown Voltage V(BR)CBO 50 UNIT CONDITIONS. 60 V IC=1 A, IE=0 Collector-Emitter Breakdown Voltage V(BR)CEO 40 50 V IC=1mA, IB=0* Emitter-Base Breakdown Voltage V(BR)EBO 10 10 V IE=10 A, IC=0 Collector Cut-Off Current ICBO 1.0 1.0 A A VCB=30V, IE=0 VCB=40V, IE=0 Emitter Cut-Off Current IEBO 0.1 0.1 A VEB=8V, IC=0 Collector-Emitter Saturation Voltage VCE(sat) 1.0 1.5 1.0 1.5 V V IC=200mA, IB=2mA* IC=1A, IB=2mA* Base-Emitter Saturat
2N6725 Pott) Watt B. E-Line ABSOLUTE MAXIMUM RATINGS. TO92 Compatible PARAMETER SYMBOL 2N6724 | 2N6725 UNIT Collector-Base Voltage Vego 50 60 Vv Collector-Emitter Voltage Vceo 40 50 Vv Emitter-Base Voltage Veso 10 Vv Peak Pulse Current lem 2 A Continuous Collector Current Ic 1 A Power Dissipation at T,,,)= 25C Prot 1 Ww Operating and Storage Temperature Range TT stg -55 to +200 c ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). PARAMETER SYMBOL 2N6724 2N6725 UNIT | CONDITIONS. MIN. | MAX.| MIN. | MAX. Collector-Base VipricBo | 50 60 Vv Ic=1pA, |p=0 Breakdown Voltage Collector-Emitter ViBRICEO 40 50 Vv Ic=1mA, [p=0* Breakdown Voltage Emitter-Base ViBRIEBO 10 10 Vv Ig=10pA, Ic=0 Breakdown Voltage Collector Cut-Off lcBo 1.0 pA Vcp=30V, ie=0 Current 1.0 pA Vecg=40V, Ie=0 Emitter Cut-Off lego 0.1 0.1 pA Vepa8V, Ip=0 Current Collector-Emitter Vce(sat) 1.0 1.0 Vv Ic=200mA, Ig=2mA* Saturation Voltage 1.5 1.5 Vv Ic=1A, lg=2mA* Base-Emitter VBE(sat) v Ic=1A, Ip=
2N6719 ZTX657 92PU200 ZTX752 MPSW55 ZTX551 2N6720 ZTX655 92PU391 ZTX656 MPSW56 ZTX552 2N6721 ZTX656 92PU392 ZTX657 MPSW60 ZTX757 2N6722 ZTX657 92PU393 ZTX657 MPSW92 ZTX757 2N6723 ZTX657 BD370A ZTX750 MPSW93 ZTX756 2N6724 2N6724 BD370B 2TX751 TN2017 ZTX451 2N6725 2N6725 BD370C ZTX752 TN2102 ZTX452 2N6726 2N6726 BD370D ZTX753 N2218A ZTX450 2N6727 2N6727 BD371A ZTX650 N2219 ZTX450 2N6728 2N6728 BD371B ZTX651 TN2219A ZTX450 2N6729 2N6729 BD371C ZTX652 N2270 ZTX450 2N6730 2N6730 BD371D ZTX653 TN3020 ZTX452 2N6731 2N6731 MPS650 ZTX650 TN3053 ZTX450 2N6732 2N6732 MPS651 Z1TX651 N3244 ZTX550 2N6733 ZTX656 MPS750 ZTX750 TN3245 ZTX551 2N6734 ZTX657 MPS751 ZTX751 TN3252 ZTX650 2N6735 ZTX657 MPS6601 ZTX449 N3253 ZTX650 92PU01 2N6714 MPS6651 ZTX549 TN3440 ZTX657 92PU0D1A 2N6715 MPS6714 ZTX649 N3467 ZTX550 92PU05 2N6716 MPS6715 ZTX650 TN3468 ZTX551 92PU06 2N6717 MPS6716 Z2TX651 N3725 ZTX650 92PU07 2N6718 MPS6717 ZTX651 N3742 ZTX657 92PU10 2N6719 MPS6726 ZTX749 TN4030 ZTX551 92PU36 ZTX655 MPS6727 Z
2N6725 ISSUE 1 MARCH 94 FEATURES * 50 Volt VCEO * Gain of 15k at IC = 0.5 Amp * Ptot=1 Watt C B E E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Collector-Base Voltage VCBO 2N6724 2N6725 50 60 UNIT Collector-Emitter Voltage VCEO 40 50 Emitter-Base Voltage VEBO 10 V Peak Pulse Current ICM 2 A Continuous Collector Current IC 1 A Power Dissipation at Tamb = 25C Ptot 1 W Operating and Storage Temperature Range Tj:Tstg -55 to +200 C V V ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). PARAMETER SYMBOL 2N6724 Collector-Base Breakdown Voltage V(BR)CBO 50 UNIT CONDITIONS. 60 V IC=1 A, IE=0 Collector-Emitter Breakdown Voltage V(BR)CEO 40 50 V IC=1mA, IB=0* Emitter-Base Breakdown Voltage V(BR)EBO 10 10 V IE=10 A, IC=0 Collector Cut-Off Current ICBO 1.0 1.0 A A VCB=30V, IE=0 VCB=40V, IE=0 Emitter Cut-Off Current IEBO 0.1 0.1 A VEB=8V, IC=0 Collector-Emitter Saturation Voltage VCE(sat) 1.0 1.5 1.0 1.5 V V IC=200mA, IB=2mA* IC=1A, IB=2mA* Base-Emitter Saturat
ase) 2250 ] O16(.41) 016.41) .014(.36) ies ot 41) TS Be ken rae a e- ep =e ean a ! TYPE TERM.1 | TEAM.2 TERM.3 TAB 10-237 | EMITTER | BASE COLLECTOR } COLLECTOR maximum ratings (T, = 25C) (unless otherwise specified) RATING SYMBOL 92GU45/2N6724_ | 92GU45A/2N6725 UNITS Collector-Emitter Voltage VcEO 40 50 - Volts Collector-Emitter Voltage VcEs 50 60 Volts Emitter Base Voltage VEBO 12 12 Voits Collector Current Continuous Io 2.0 2.0 A Total Power Dissipation @ Ta = 25C Ppp* 1.0 1.0 Watts Operating and Storage Junction Temperature Range Ty, Tsta ~55 to +150 -55 to +150 C thermal characteristics Thermal Resistance, Junction to Ambient Ra 200 200 C/W Thermal Resistance, Junction to Case ReJc 62.5 62.5 C/W * Pop = Practical Power Dissipation, i.e., that power which can be dissipated with the device installed in a typical manner on a printed circuit board with total copper run area equal to 1.0 in.? minimum. 833electrical characteristics (Tc = 25C) (unless otherwise specified) } CHARACTERISTIC | SYMBOL
.016(.41) 014( 36) ~. .022(.56) ol 022(.56) g _020(.51) ] .016{.41} 0166.41) .014( 38) TYPE TEAM | TERM.2 TERMS TAB O-237 | EMITTER | BASE | COLLECTOR | COLLECTOR maximum ratings (Ta = 25C) (unless otherwise specified) RATING SYMBOL 92GU45/2N6724 92GU45A/2N6725 UNITS Collector-Emitter Voltage VcEO 40 50 Volts Collector-Emitter Voltage VcES 50 - 60 Volts Emitter Base Voltage VEBO 12 12 Volts Collector Current Continuous Ic 2.0 2.0 A Total Power Dissipation @ Ta = 25C Ppp* 1.0 1.0 Watts Operating and Storage Junction Temperature Range Ty, Tsta ~55 to +150 ~55 to +150 C thermal characteristics Thermal Resistance, Junction to Ambient Rea 200 200 C/W Thermal Resistance, Junction to Case Rac 62.5 62.5 : C/W * Pop = Practical Power Dissipation, [.e., that power which can be dissipated with the device installed in a typical manner on a printed circuit board with total copper run area equal to 1.0 in.2 minimum. 1372 G-09 3a7s081 G E SOLIO STATED] DEP} 3a75081 gos 3 . IB. electrical characteristics (Tc =
30 60 100 1 0.5 1000 50 37/77 92PU01 92PU51 55 1000 1 2N6715/ 2N6727/ 2 40 60 100 1 0.5 1000 50 37/77 Q92PU01A 92PU51A 55 1000 4 2N6724/ 2 40 25k 200 5 1 200 * 100 05 92PU45 4k 1000 5 15 1000 2N6705/ 2N6708/ 2 45 40 500 2 0.5 500 50 38/78 92PE37A 92PE77A 2N6725 2 50 25k 200 5 1 200 100 05 92PU45A 4k 1000 5 1.5 1000 2N6706/ 2N6709/ 2 60 40 500 2 0.5 500 50 38/78 92PE37B 92PE77B 2N6716/ 2N6728/ 2 60 20 500 1 0.35 250 50 38/78 92PU05 92PU55 2N6731/ 2N6732/ 2 80 100 300 350 2 0.35 350 * 50 39/79 92PU100 92PU200 2N6707/ 2N6710/ 2 80 40 500 2 0.5 500 50 39/79 92PE37C 92PE77C 2N6717/ 2N6720/ 2 80 20 500 1 0.35 250 50 39/79 92PU06 92PU56 Pinout: 92PE ECB 92PU, TN EBC *AIl TO-237: 850 mW, free air (Ta = 25C) 2.0W, collector jead at 25C 1W-1.2W mounted flush in PC board 4-19 * OPINH UO}D9IVS JO}SISUBI] JOMOd OdAL JEZ-OL dvb DARLINGTON Vcspo | VcEo | VeEBO 'ces VCE(SAT) VBE(SAT) Cob fy 1 P Type Case wv) | ow wv) | 'c80 @ Vee _ DFE @ 'C @ VCE wok) OU) O@ S| pr) (MHz) @ (| Praress No. Style Min Min Min na) '
CEO 40 ---- `EBO Voltage Collector-Emitter Voltage Voltage Peak Pulse Current Continuous Power Dissipation Operating ----. Collector Current at Tamb= 25C and Storage Temperature _ UNIT v G v 50 10 _ v -. `CM 2 1~ 1 A Ptot 1 w -55 to +20i- `C Tj:Tstg Range 2N6725 2N6724 -- A _---- ELECTRICAL CHARACTERISTICS (at Tamb = 2tVC unless otherwise stated). PARAMETER SYMBOL 2N6725 2N6724 MIN. MAX. MIN. UNIT CONDITIONS. MAX. ~ollector-Base Breakdown Voltage `( BR)CBO 50 60 v ---- 1~1 p_A, Ipo Collector-Emitter Breakdown Voltage .------ Emitter-Base Breakdown Voltage `( BR)CEO 40 50 v 1~1 mA, IB=O* `(BR)EBO 10 10 v lE=lopA, Zollector Current lCBO @ VC;30V, v&40v, Cut-Off Emitter &t-Off-- Current Collector Base Capacitance "Measured Ratio `CE(satl 1.0 , ~ `BE(sat) `BE(on) ~ 25K 15K 4K `FE CCB --..- 1.0 lEBO Collector-Emitter Saturation Voltage .-- Base-Emitter Saturation Voltage .---- Base-Emitter Turn-On Voltage Static Forward Current Transfer --. t ! l~o @ IE.O lE=o 0.1 <7 ~ PA 1,0 1.5 , 1,0 i