2N6660 * VDSS = 60V , ID = 1.0A, RDS(ON) = 3.0 * * * Fast Switching Low Threshold Voltage (Logic Level) Low CISS * * * Integral Source-Drain Body Diode Hermetic Metal TO39 Package High Reliability Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25C unless otherwise stated) VDS VGS ID IDM PD Drain - Source Voltage Gate - Source Voltage Continuous Drain Current (1) Pulsed Drain Current Total Power Dissipation at PD Total Power Dissipation at TJ Tstg Operating Temperature Range Storage Temperature Range TC = 25C TC 25C De-rate TC > 25C TA 25C De-rate TA > 25C 60V 20V 1.0A 3.0A 5W 40mW/C 725mW 5.8mW/C -65 to +150C -65 to +150C THERMAL PROPERTIES Symbols Parameters Max. Units RJC Thermal Resistance, Junction To Case 25 C/W RJA Thermal Resistance, Junction To Ambient 172 C/W Notes (1) Repetitive Rating: Pulse width limited by maximum junction temperature (2) Pulse Width 300us, 2% Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without not

2N6660C4 * VDSS = 60V , ID = 1.0A, RDS(ON) = 3.0 * * * Fast Switching Low Threshold Voltage (Logic Level) Low CISS * * * Integral Source-Drain Body Diode Hermetic Surface Mounted Package High Reliability Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25C unless otherwise stated) VDS VGS ID IDM PD Drain - Source Voltage Gate - Source Voltage Continuous Drain Current (1) Pulsed Drain Current Total Power Dissipation at PD Total Power Dissipation at TJ Tstg Operating Temperature Range Storage Temperature Range 60V 20V 1.0A 3.0A 5W 40mW/C 700mW 5.6mW/C -65 to +150C -65 to +150C TC = 25C TC 25C De-rate TC > 25C TA 25C De-rate TA > 25C THERMAL PROPERTIES Symbols Parameters RJC Thermal Resistance, Junction To Case RJA Thermal Resistance, Junction To Ambient Min. Typ. Max. Units 25 C/W 178.5 C/W Notes (1) Repetitive Rating: Pulse width limited by maximum junction temperature (2) Pulse Width 300us, 2% Semelab Limited reserves the right to change test conditions, parameter limits and package dim

2N6660CSM4 MECHANICAL DATA N-CHANNEL ENHANCEMENT MODE MOSFET VDSS 60V ID 1.0A RDS(on) 3.0 Dimensions in mm (inches) 1.40 0.15 (0.055 0.006) 5.59 0.13 (0.22 0.005) 3 4 1.02 0.20 (0.04 0.008) 2 1 1.27 0.05 (0.05 0.002) 0.23 rad. (0.009) 0.64 0.08 (0.025 0.003) 3.81 0.13 (0.15 0.005) 0.25 0.03 (0.01 0.001) 0.23 min. (0.009) FEATURES 2.03 0.20 (0.08 0.008) * * * * LCC3 PACKAGE (MO-041BA) (Underside View) PAD 1 - DRAIN PAD 3 - SOURCE PAD 2 - N/C PAD 4 - GATE ABSOLUTE MAXIMUM RATINGS T Faster switching Low Ciss Integral Source-Drain Diode High Input Impedance and High Gain DESCRIPTION This enhancement-mode (normally-off) vertical DMOS FET is ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. Hi-Reliability Military and Space screening options available CASE = 25C unless otherwise stated VDS Drain - Source Voltage 60V ID Drain Current - Continuous (TC = 25C) 1.0A IDM Dra

2N6660, 2N6660-2, 2N6660JANTX, 2N6660JANTXV www.vishay.com Vishay Siliconix N-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) 60 RDS(on) () at VGS = 10 V 3 Configuration * Military Qualified * * * * * Single TO-205AD (TO-39) BENEFITS * * * * * * S 1 2 Low On-Resistence: 1.3 Low Threshold: 1.7 V Low Input Capacitance: 35 pF Fast Switching Speed: 8 ns Low Input and Output Leakage APPLICATIONS 3 G Guaranteed Reliability Low Offset Voltage Low-Voltage Operation Easily Driven Without Buffer High-Speed Circuits Low Error Voltage * Hi-Rel Systems * Direct Logic-Level Interface: TTL/CMOS * Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc. * Battery Operated Systems * Solid-State Relays D Top View ORDERING INFORMATION PART DESCRIPTION/DSCC PART NUMBER PACKAGE 2N6660 2N6660-2 2N6660JANTX VISHAY ORDERING PART NUMBER Commercial 2N6660 Commercial, Lead (Pb)-free 2N6660

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