2N3700UBJ) * JANTX level (2N3700UBJX) * JANTXV level (2N3700UBJV) * JANS level (2N3700UBJS) * JANSR level (2N3700UBJSR) * QCI to the applicable level * 100% die visual inspection per MIL-STD-750 method 2072 for JANTXV and JANS Features * Radiation testing (total dose) upon request * * * * Hermetically sealed Cersot ceramic Also available in chip configuration Chip geometry 4500 Reference document: MIL-PRF-19500/391 Benefits * Qualification Levels: JAN, JANTX, JANTXV, JANS and JANSR * Radiation testing available Please contact SEMICOA for special configurations www.SEMICOA.com or (714) 979-1900 Absolute Maximum Ratings Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current, Continuous Power Dissipation, TA = 25OC Derate linearly above 37.5OC Power Dissipation, TC = 25OC Derate linearly above 25OC Thermal Resistance Operating Junction Temperature Storage Temperature Copyright 2010 Rev. G TC = 25C unless o
2N3700UBJ) * JANTX level (2N3700UBJX) * JANTXV level (2N3700UBJV) * JANS level (2N3700UBJS) * QCI to the applicable level * 100% die visual inspection per MIL-STD-750 method 2072 for JANTXV and JANS * Radiation testing (total dose) upon request Features * * * * Hermetically sealed Cersot ceramic Also available in chip configuration Chip geometry 4500 Reference document: MIL-PRF-19500/391 Benefits * Qualification Levels: JAN, JANTX, JANTXV and JANS * Radiation testing available Please contact Semicoa for special configurations www.SEMICOA.com or (714) 979-1900 Absolute Maximum Ratings Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current, Continuous Power Dissipation, TA = 25OC Derate linearly above 37.5OC Power Dissipation, TC = 25OC Derate linearly above 25OC Thermal Resistance Operating Junction Temperature Storage Temperature Copyright 2002 Rev. G TC = 25C unless otherwise specified Symbol VCEO VCBO VEBO IC PT P