2N3700UB Qualified Levels: JANSM, JANSD, JANSP, JANSL, and JANSR RADIATION HARDENED LOW POWER NPN SILICON TRANSISTOR Qualified per MIL-PRF-19500/391 DESCRIPTION This NPN ceramic surface mount device is RAD hard qualified for high-reliability applications. Microsemi also offers numerous other products to meet higher and lower power voltage regulation applications. Important: For the latest information, visit our website http://www.microsemi.com. FEATURES * Surface mount equivalent to JEDEC registered 2N3700. * RHA level JAN qualifications per MIL-PRF-19500/391 (see part nomenclature for all options). UB Package Also available in: TO-18 (TO-206AA) APPLICATIONS / BENEFITS * * * * (leaded) JANS_2N3700 Ceramic UB surface mount package. Lightweight. Low power. Military and other high-reliability applications. TO-39 (TO-205AD) (leaded) JANS_2N3019, 2N3019S TO-46 (TO-206AB) (leaded) JANS_2N3057A o MAXIMUM RATINGS @ TA = +25 C unless otherwise noted. Parameters/Test Conditions Junction and Storage Tempera
2N3700UB Qualified Levels: JANSM, JANSD, JANSP, JANSL, and JANSR RADIATION HARDENED LOW POWER NPN SILICON TRANSISTOR Qualified per MIL-PRF-19500/391 DESCRIPTION This NPN ceramic surface mount device is RAD hard qualified for high-reliability applications. Microsemi also offers numerous other products to meet higher and lower power voltage regulation applications. Important: For the latest information, visit our website http://www.microsemi.com. FEATURES * Surface mount equivalent to JEDEC registered 2N3700. * RHA level JAN qualifications per MIL-PRF-19500/391 (see part nomenclature for all options). UB Package Also available in: TO-18 (TO-206AA) APPLICATIONS / BENEFITS * * * * (leaded) JANS_2N3700 Ceramic UB surface mount package. Lightweight. Low power. Military and other high-reliability applications. TO-39 (TO-205AD) (leaded) JANS_2N3019, 2N3019S TO-46 (TO-206AB) (leaded) JANS_2N3057A o MAXIMUM RATINGS @ TA = +25 C unless otherwise noted. Parameters/Test Conditions Junction and Storage Tempera
all be completed by 11 November 2010. MIL-PRF-19500/391M 20 September 2010 SUPERSEDING MIL-PRF-19500/391L 15 January 2008 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, LOW-POWER TYPES 2N3019, 2N3019S, 2N3057A, 2N3700, AND 2N3700UB, JAN, JANTX, JANTXV, JANS, JANSM, JANSD, JANSP, JANSL, JANSR, JANSF, JANSG, JANSH, JANHCA, JANHCB, JANKCA, JANKCB JANKCBM, JANKCD, JANKCP, JANKCL, JANKCR, JANKCF, JANKCG, AND JANKCH This specification is approved for use by all Departments and Agencies of the Department of Defense. The requirements for acquiring the product described herein shall consist of this specification sheet and MIL-PRF-19500. 1. SCOPE 1.1 Scope. This specification covers the performance requirements for NPN, silicon, low-power transistors. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500. Two levels of product assurance are provided for the unencapsulated device type 2N3700. Provisions for radiation hardness assura
3 Website: http: //www.microsemi.com Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 LOW POWER NPN SILICON TRANSISTOR Qualified per MIL-PRF-19500/391 DEVICES LEVELS 2N3019 2N3019S 2N3057A 2N3700 2N3700S 2N3700UB JAN JANTX JANTXV JANS ABSOLUTE MAXIMUM RATINGS (TC = +25C unless otherwise noted) Parameters / Test Conditions Symbol Value Unit Collector-Emitter Voltage VCEO 80 Vdc Collector-Base Voltage VCBO 140 Vdc Emitter-Base Voltage VEBO 7.0 Vdc IC 1.0 Adc Collector Current Total Power Dissipation @ TA = +25C (1) @ TC = +25C (2) W 2N3019; 2N3019S 2N3057A 2N3700, 2N3700UB 2N3019; 2N3019S 2N3057A 2N3700 2N3700UB Operating & Storage Jct Temp Range PT 0.8 0.5 0.5 TJ, Tstg 5.0 1.8 1.0 N/A -65 to +200 TO-39 (TO-205AD) 2N3019, 2N3019S W C TO-18 (TO-206AA) 2N3700 NOTE: 1) Derate linearly 4.6 mW/C for type 2N3019 and 2N3019S; 2.3 mW/C for type 2N3057A; 2.85 mW/C for type 2N3700; 6.6 mW/C for type 2N3700UB for TA +25
ng the ASSIST Online database at https://assist.dla.mil. AMSC N/A FSC 5961 MIL-PRF-19500/391P 1.3 Maximum ratings. Unless otherwise specified, TA = +25C. - Continued. Types PT TA = +25C (1) (2) W 0.800 0.800 0.500 0.500 0.500 2N3019 2N3019S 2N3057A 2N3700 2N3700UB (1) (2) (3) (4) PT TC = +25C (1) (2) W 5 5 1.8 1 N/A PT TSP(IS) = +25C (1) (2) W N/A N/A N/A N/A 1.5 RJA (2) (3) (4) RJC (2) (3) RJSP(IS) (2) (3) C/W 195 195 325 325 325 C/W 30 30 80 150 N/A C/W N/A N/A N/A N/A 90 For derating, see figures 8, 9, 10, 11, 12, and 13. See 3.3. For thermal curves, see figures 14, 15, 16, 17, 18, 19, and 20. For non-thermal conductive PCB or unknown PCB surface mount conditions in free air, substitute figures 8 and 12 for the UB package and use RJA. 1.4 Primary electrical characteristics. Limits hFE1 hFE2 VCE = 10 V dc IC = 150 mA dc Min Max VCE = 10 V dc IC = 0.1 mA dc 100 300 Types hFE3 (1) VCE = 10 V dc IC = 10 mA dc 50 300 Limit hFE5 (1) VCE = 10 V dc IC = 1 A dc 90 VCE = 10 V dc IC = 500 mA dc 50 300 |h
2N3700UB JAN, JTX, JTXV, JANS Processed per MIL-PRF-19500/391 Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Power Dissipation @ TA = +250C(1) 2N3019; 2N3019S 2N3057A 2N3700 2N3700UB @ TC = +250C(2) 2N3019; 2N3019S 2N3057A 2N3700 2N3700UB Operating & Storage Jct Temp Range QML DEVICES 2N3019, 2N3019S TO-39 (TO-205AD) LOW-POWER NPN SILICON TRANSISTORS MAXIMUM RATINGS Ratings MIL-PRF Symbol Value Units VCEO VCBO VEBO IC 80 140 7.0 1.0 Vdc Vdc Vdc Adc PT 0.8 0.5 0.5 0.5 TJ, Tstg 5.0 1.8 1.8 1.16 -65 to +175 2N3700 TO- 18 (TO-206AA) W 2N3057A TO-46 (TO-206AB) W 0 C 2N3700UB 3 PIN SURFACE MOUNT THERMAL CHARACTERISTICS Characteristics Symbol Max. Unit ThermalResistance,Junction-to-Ambient 0 2N3019, S 175 C/W RJA 0 All other 325 C/W devices 1) Derate linearly 5.7 mW/0C above TA = +600C. 2) Derate linearly 28.6 mW/0C for type 2N3019 and 2N3019S; 10.3 mW/0C for types 2N3057A, 2N3700, & 2N3700UB for TC +250C.
he latter takes precedence. Table 1. Device summary Device Qualification Agency spec Package Radiation level EPPL - Yes 100 krad SW Yes 2N3700RUBx 100 krad ESCC Target SOC3700HRB - Yes 100 krad SW Yes 100 krad ESCC Target - - 100 krad SW - 100 krad ESCC - 2N3700UBxx 2N3700UBxxSW SOC3700xxSW UB ESCC 5201/004 LCC-3 SOC3700RHRx 2N3700HR 2N3700SW TO-18 2N3700RHRx J2N3700UB1 - JANSR2N3700UBG JANSR2N3700UBT JANS MIL-PRF-19500/391 UB 100 krad - 100 krad - JANS2N3700UBG - JANS2N3700UBT - June 2013 This is information on a product in full production. DocID15354 Rev 6 1/20 www.st.com Contents 2N3700HR Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 JANS electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.2
2N3700UB Available on commercial versions Low Power NPN Silicon Transistor Qualified per MIL-PRF-19500/391 Qualified Levels: JAN, JANTX, JANTXV, and JANS DESCRIPTION This 2N3700UB NPN ceramic surface mount device is military qualified for high-reliability applications. Important: For the latest information, visit our website http://www.microsemi.com. FEATURES * Surface mount equivalent to JEDEC registered 2N3700 number. * * * JAN, JANTX, JANTXV and JANS qualifications are available per MIL-PRF-19500/391. Rad hard levels are also available per MIL-PRF-19500/391. (Click here for RHA datasheet.) RoHS compliant versions available (commercial grade only). UB Package Also available in: TO-18 (TO-206AA) (leaded) 2N3700 APPLICATIONS / BENEFITS * * * * Ceramic UB surface mount package. Lightweight. Low power. Military and other high-reliability applications. TO-39 (TO-205AD) (leaded) 2N3019 TO-5 package (leaded) 2N3019S TO-46 (TO-206AB) (leaded) 2N3057A o MAXIMUM RATINGS @ T A = +25 C unless
shall be completed by 15 October 2002. INCH-POUND MIL-PRF-19500/391G 15 July 2002 SUPERSEDING MIL-PRF-19500/391F 26 March 2001 PERFORMANCE SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, LOW-POWER TYPES 2N3019, 2N3019S, 2N3057A, 2N3700, AND 2N3700UB JAN, JANTX, JANTXV, JANS, JANHC2N3700 AND JANKC2N3700 This specification is approved for use by all Departments and Agencies of the Department of Defense. 1. SCOPE 1.1 Scope. This specification covers the performance requirements for NPN, silicon, low-power transistors. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500. Two levels of product assurance are provided for the unencapsulated device type 2N3700. 1.2 Physical dimensions. See figure 1, 2N3019 (TO-5), 2N3019S (similar to TO-39), figure 2, 2N3057A (TO-46), figure 3, 2N3700 (TO-18), figure 4, 2N3700UB, and figure 5, JANHCA2N3700,.and JANKCA2N3700. 1.3 Maximum ratings. Type PT TA = +25C W 2N3019 2N3019S 2N3057A 2N3700
2N3700UB Available on commercial versions Low Power NPN Silicon Transistor Qualified per MIL-PRF-19500/391 Qualified Levels: JAN, JANTX, JANTXV, and JANS DESCRIPTION This 2N3700UB NPN ceramic surface mount device is military qualified for high-reliability applications. Important: For the latest information, visit our website http://www.microsemi.com. FEATURES * Surface mount equivalent to JEDEC registered 2N3700 number. * * JAN, JANTX, JANTXV and JANS qualifications are available per MIL-PRF-19500/391. Rad hard levels are also available per MIL-PRF-19500/391. (See RHA datasheet for JANS_2N3700UB.) RoHS compliant versions available (commercial grade only). * UB Package Also available in: TO-18 (TO-206AA) (leaded) 2N3700 APPLICATIONS / BENEFITS * * * * Ceramic UB surface mount package. Lightweight. Low power. Military and other high-reliability applications. TO-39 (TO-205AD) (leaded) 2N3019 TO-5 package (leaded) 2N3019S TO-46 (TO-206AB) (leaded) 2N3057A o MAXIMUM RATINGS @
ualification system (ESCC 5000). In case of discrepancies between this datasheet and the relevant agency specification, the latter takes precedence. Table 1. Device summary Device Qualification system Agency specification Package Radiation level EPPL JANSR2N3700UBx JANSR MIL-PRF-19500/391 UB 100 krad high and low dose rate - JANS2N3700UBx JANS MIL-PRF-19500/391 UB - - 2N3700RUBx ESCC Flight 5201/004 UB 100 krad - low dose rate Target 2N3700UBx ESCC Flight 5201/004 UB - Target SOC3700RHRx ESCC Flight 5201/004 LCC-3 100 krad - low dose rate Yes SOC3700HRx ESCC Flight 5201/004 LCC-3 - Yes 2N3700RHRx ESCC Flight 5201/004 TO-18 100 krad - low dose rate - 2N3700HRx ESCC Flight 5201/004 TO-18 - - August 2015 This is information on a product in full production. DocID15354 Rev 12 1/23 www.st.com Contents 2N3700HR Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . .
2N3700UB Available on commercial versions Low Power NPN Silicon Transistor Qualified per MIL-PRF-19500/391 Qualified Levels: JAN, JANTX, JANTXV, and JANS DESCRIPTION This 2N3700UB NPN ceramic surface mount device is military qualified for high-reliability applications. Important: For the latest information, visit our website http://www.microsemi.com. FEATURES * Surface mount equivalent to JEDEC registered 2N3700 number. * * JAN, JANTX, JANTXV and JANS qualifications are available per MIL-PRF-19500/391. Rad hard levels are also available per MIL-PRF-19500/391. (See RHA datasheet for JANS_2N3700UB.) RoHS compliant versions available (commercial grade only). * UB Package Also available in: TO-18 (TO-206AA) (leaded) 2N3700 APPLICATIONS / BENEFITS * * * * Ceramic UB surface mount package. Lightweight. Low power. Military and other high-reliability applications. TO-39 (TO-205AD) (leaded) 2N3019 TO-5 package (leaded) 2N3019S TO-46 (TO-206AB) (leaded) 2N3057A o MAXIMUM RATINGS @
2N3700UB Silicon NPN Transistor Data Sheet Description Applications SEMICOA Corporation offers: * General purpose * Low power * NPN silicon transistor * Screening and processing per MIL-PRF-19500 Appendix E * JAN level (2N3700UBJ) * JANTX level (2N3700UBJX) * JANTXV level (2N3700UBJV) * JANS level (2N3700UBJS) * JANSR level (2N3700UBJSR) * QCI to the applicable level * 100% die visual inspection per MIL-STD-750 method 2072 for JANTXV and JANS Features * Radiation testing (total dose) upon request * * * * Hermetically sealed Cersot ceramic Also available in chip configuration Chip geometry 4500 Reference document: MIL-PRF-19500/391 Benefits * Qualification Levels: JAN, JANTX, JANTXV, JANS and JANSR * Radiation testing available Please contact SEMICOA for special configurations www.SEMICOA.com or (714) 979-1900 Absolute Maximum Ratings Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current, C
RANSISTOR Qualified per MIL-PRF-19500/391 Devices 2N3019 2N3019S 2N3057A MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Power Dissipation @ TA = +250C(1) 2N3019; 2N3019S 2N3057A 2N3700 2N3700UB @ TC = +250C(2) 2N3019; 2N3019S 2N3057A 2N3700 2N3700UB Operating & Storage Jct Temp Range 1) 2) Qualified Level JAN JANTX JANTXV JANS 2N3700 2N3700S Symbol Value Units VCEO VCBO VEBO IC 80 140 7.0 1.0 Vdc Vdc Vdc Adc PT 0.8 0.4 0.5 0.4 TJ, Tstg 5.0 1.8 1.8 1.16 -55 to +175 TO-39* (TO-205AD) 2N3019, 2N3019S W TO- 18* (TO-206AA) 2N3700 W TO-46* (TO-206AB) 2N3057A 0 C Derate linearly 4.6 mW/0C for type 2N3019 and 2N3019S; 2.3 mW/0C for type 2N3057A; 2.85 mW/0C for type 2N3700; 6.6 mW/0C for type 2N3700UB for TA +250C. Derate linearly 28.6 mW/0C for type 2N3019 and 2N3019S; 10.3 mW/0C for types 2N3057A, 2N3700, & 2N3700UB for TC +250C. 3 PIN SURFACE MOUNT* 2N3700UB *See appendix A for pac
3 Website: http: //www.microsemi.com Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 LOW POWER NPN SILICON TRANSISTOR Qualified per MIL-PRF-19500/391 DEVICES LEVELS 2N3019 2N3019S 2N3057A 2N3700 2N3700S 2N3700UB JAN JANTX JANTXV JANS ABSOLUTE MAXIMUM RATINGS (TC = +25C unless otherwise noted) Parameters / Test Conditions Symbol Value Unit Collector-Emitter Voltage VCEO 80 Vdc Collector-Base Voltage VCBO 140 Vdc Emitter-Base Voltage VEBO 7.0 Vdc IC 1.0 Adc Collector Current Total Power Dissipation @ TA = +25C (1) @ TC = +25C (2) W 2N3019; 2N3019S 2N3057A 2N3700, 2N3700UB 2N3019; 2N3019S 2N3057A 2N3700 2N3700UB Operating & Storage Jct Temp Range PT 0.8 0.5 0.5 TJ, Tstg 5.0 1.8 1.0 N/A -65 to +200 TO-39 (TO-205AD) 2N3019, 2N3019S W C TO-18 (TO-206AA) 2N3700 NOTE: 1) Derate linearly 4.6 mW/C for type 2N3019 and 2N3019S; 2.3 mW/C for type 2N3057A; 2.85 mW/C for type 2N3700; 6.6 mW/C for type 2N3700UB for TA +25