689-0803 Website: http: //www.microsemi.com Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 LOW POWER NPN SILICON TRANSISTOR Qualified per MIL-PRF-19500/391 DEVICES LEVELS 2N3019 2N3019S 2N3057A 2N3700 2N3700S 2N3700UB JAN JANTX JANTXV JANS ABSOLUTE MAXIMUM RATINGS (TC = +25C unless otherwise noted) Parameters / Test Conditions Symbol Value Unit Collector-Emitter Voltage VCEO 80 Vdc Collector-Base Voltage VCBO 140 Vdc Emitter-Base Voltage VEBO 7.0 Vdc IC 1.0 Adc Collector Current Total Power Dissipation @ TA = +25C (1) @ TC = +25C (2) W 2N3019; 2N3019S 2N3057A 2N3700, 2N3700UB 2N3019; 2N3019S 2N3057A 2N3700 2N3700UB Operating & Storage Jct Temp Range PT 0.8 0.5 0.5 TJ, Tstg 5.0 1.8 1.0 N/A -65 to +200 TO-39 (TO-205AD) 2N3019, 2N3019S W C TO-18 (TO-206AA) 2N3700 NOTE: 1) Derate linearly 4.6 mW/C for type 2N3019 and 2N3019S; 2.3 mW/C for type 2N3057A; 2.85 mW/C for type 2N3700; 6.6 mW/C for type 2N3700UB for TA +25C 2) Derate linearly 28.6 mW/C
er-Base Voltage Collector Current Total Power Dissipation @ TA = +250C(1) 2N3019; 2N3019S 2N3057A 2N3700 2N3700UB @ TC = +250C(2) 2N3019; 2N3019S 2N3057A 2N3700 2N3700UB Operating & Storage Jct Temp Range 1) 2) Qualified Level JAN JANTX JANTXV JANS 2N3700 2N3700S Symbol Value Units VCEO VCBO VEBO IC 80 140 7.0 1.0 Vdc Vdc Vdc Adc PT 0.8 0.4 0.5 0.4 TJ, Tstg 5.0 1.8 1.8 1.16 -55 to +175 TO-39* (TO-205AD) 2N3019, 2N3019S W TO- 18* (TO-206AA) 2N3700 W TO-46* (TO-206AB) 2N3057A 0 C Derate linearly 4.6 mW/0C for type 2N3019 and 2N3019S; 2.3 mW/0C for type 2N3057A; 2.85 mW/0C for type 2N3700; 6.6 mW/0C for type 2N3700UB for TA +250C. Derate linearly 28.6 mW/0C for type 2N3019 and 2N3019S; 10.3 mW/0C for types 2N3057A, 2N3700, & 2N3700UB for TC +250C. 3 PIN SURFACE MOUNT* 2N3700UB *See appendix A for package outline ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted) Characteristics Symbol Min. Max. Unit V(BR)CBO 140 Vdc V(BR)EBO 7.0 Vdc V(BR)CEO 80 Vdc OFF CHARACTERISTICS Collector-Base Break
689-0803 Website: http: //www.microsemi.com Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 LOW POWER NPN SILICON TRANSISTOR Qualified per MIL-PRF-19500/391 DEVICES LEVELS 2N3019 2N3019S 2N3057A 2N3700 2N3700S 2N3700UB JAN JANTX JANTXV JANS ABSOLUTE MAXIMUM RATINGS (TC = +25C unless otherwise noted) Parameters / Test Conditions Symbol Value Unit Collector-Emitter Voltage VCEO 80 Vdc Collector-Base Voltage VCBO 140 Vdc Emitter-Base Voltage VEBO 7.0 Vdc IC 1.0 Adc Collector Current Total Power Dissipation @ TA = +25C (1) @ TC = +25C (2) W 2N3019; 2N3019S 2N3057A 2N3700, 2N3700UB 2N3019; 2N3019S 2N3057A 2N3700 2N3700UB Operating & Storage Jct Temp Range PT 0.8 0.5 0.5 TJ, Tstg 5.0 1.8 1.0 N/A -65 to +200 TO-39 (TO-205AD) 2N3019, 2N3019S W C TO-18 (TO-206AA) 2N3700 NOTE: 1) Derate linearly 4.6 mW/C for type 2N3019 and 2N3019S; 2.3 mW/C for type 2N3057A; 2.85 mW/C for type 2N3700; 6.6 mW/C for type 2N3700UB for TA +25C 2) Derate linearly 28.6 mW/C
spec Package Radiation level EPPL - Yes 100 krad SW Yes 2N3700RUBx 100 krad ESCC Target SOC3700HRB - Yes 100 krad SW Yes 100 krad ESCC Target - - 100 krad SW - 100 krad ESCC - 2N3700UBxx 2N3700UBxxSW SOC3700xxSW UB ESCC 5201/004 LCC-3 SOC3700RHRx 2N3700HR 2N3700SW TO-18 2N3700RHRx J2N3700UB1 - JANSR2N3700UBG JANSR2N3700UBT JANS MIL-PRF-19500/391 UB 100 krad - 100 krad - JANS2N3700UBG - JANS2N3700UBT - June 2013 This is information on a product in full production. DocID15354 Rev 6 1/20 www.st.com Contents 2N3700HR Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 JANS electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.2 ESCC electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 2.3 Electrical characteristics (curves) . . . . . . . . .