June 2015 SUPERSEDING MIL-PRF-19500/391N 20 May 2014 PERFORMANCE SPECIFICATION SHEET * TRANSISTOR, NPN, SILICON, LOW-POWER, ENCAPSULATED (THROUGH-HOLE AND SURFACE MOUNT), AND UNENCAPSULATED, RADIATION HARDNESS ASSURANCE, DEVICE TYPES 2N3019, 2N3057A, AND 2N3700, QUALITY LEVELS JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC This specification is approved for use by all Departments and Agencies of the Department of Defense. The requirements for acquiring the product described herein shall consist of this specification sheet and MIL-PRF-19500. 1. SCOPE * 1.1 Scope. This specification covers the performance requirements for NPN, silicon, low-power transistors. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500. Two levels of product assurance are provided for the unencapsulated device types 2N3019 and 2N3700. Radiation hardness assurance (RHA) level designators "M", "D", "P", "L", "R", "F", "G" and "H" are appended to the device prefix to identi
2N3700HR Hi-Rel 80 V, 1 A NPN transistor Datasheet - production data Features V(BR)CEO 80 V IC(max) 1A HFE at 10 V - 150 mA >100 1 2 3 3 3 TO-18 4 1 1 2 2 LCC-3 UB Pin 4 in UB is connected to the metallic lid Figure 1. Internal schematic diagram * Hermetic packages * ESCC and Jans qualified * Up to 100 krad(Si) low dose rate Description The 2N3700HR is a NPN transistor specifically designed for aerospace and Hi-Rel applications. It is available in the JAN qualification system (MILPRF19500) and in the ESCC qualification system (ESCC 5000). In case of discrepancies between this datasheet and the relevant agency specification, the latter takes precedence. Table 1. Device summary Device Qualification system Agency specification Package Radiation level EPPL JANSR2N3700UBx JANSR MIL-PRF-19500/391 UB 100 krad high and low dose rate - JANS2N3700UBx JANS MIL-PRF-19500/391 UB - - 2N3700RUBx ESCC Flight 5201/004 UB 100 krad - low dose rate Target 2N3
document shall be completed by 11 November 2010. MIL-PRF-19500/391M 20 September 2010 SUPERSEDING MIL-PRF-19500/391L 15 January 2008 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, LOW-POWER TYPES 2N3019, 2N3019S, 2N3057A, 2N3700, AND 2N3700UB, JAN, JANTX, JANTXV, JANS, JANSM, JANSD, JANSP, JANSL, JANSR, JANSF, JANSG, JANSH, JANHCA, JANHCB, JANKCA, JANKCB JANKCBM, JANKCD, JANKCP, JANKCL, JANKCR, JANKCF, JANKCG, AND JANKCH This specification is approved for use by all Departments and Agencies of the Department of Defense. The requirements for acquiring the product described herein shall consist of this specification sheet and MIL-PRF-19500. 1. SCOPE 1.1 Scope. This specification covers the performance requirements for NPN, silicon, low-power transistors. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500. Two levels of product assurance are provided for the unencapsulated device type 2N3700. Pr
LICON TRANSISTOR Qualified per MIL-PRF-19500/391 Devices 2N3019 2N3019S 2N3057A MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Power Dissipation @ TA = +250C(1) 2N3019; 2N3019S 2N3057A 2N3700 2N3700UB @ TC = +250C(2) 2N3019; 2N3019S 2N3057A 2N3700 2N3700UB Operating & Storage Jct Temp Range 1) 2) Qualified Level JAN JANTX JANTXV JANS 2N3700 2N3700S Symbol Value Units VCEO VCBO VEBO IC 80 140 7.0 1.0 Vdc Vdc Vdc Adc PT 0.8 0.4 0.5 0.4 TJ, Tstg 5.0 1.8 1.8 1.16 -55 to +175 TO-39* (TO-205AD) 2N3019, 2N3019S W TO- 18* (TO-206AA) 2N3700 W TO-46* (TO-206AB) 2N3057A 0 C Derate linearly 4.6 mW/0C for type 2N3019 and 2N3019S; 2.3 mW/0C for type 2N3057A; 2.85 mW/0C for type 2N3700; 6.6 mW/0C for type 2N3700UB for TA +250C. Derate linearly 28.6 mW/0C for type 2N3019 and 2N3019S; 10.3 mW/0C for types 2N3057A, 2N3700, &
2N3700 JAN, JTX, JTXV 2N3700UB JAN, JTX, JTXV MIL-PRF QPL DEVICES Processed per MIL-PRF-19500/391 2N3019, 2N3019S TO-39 (TO-205AD) LOW-POWER NPN SILICON TRANSISTORS MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Power Dissipation @ TA = +250C(1) 2N3019; 2N3019S 2N3057A 2N3700 2N3700UB @ TC = +250C(2) 2N3019; 2N3019S 2N3057A 2N3700 2N3700UB Operating & Storage Jct Temp Range 1) 2) Symbol Value Units VCEO VCBO VEBO IC 80 140 7.0 1.0 Vdc Vdc Vdc Adc PT 0.8 0.4 0.5 0.4 TJ, Tstg 5.0 1.8 1.8 1.16 -55 to +175 2N3700 TO- 18 (TO-206AA) W 2N3057A TO-46 (TO-206AB) W 0 C 2N3700UB 3 PIN SURFACE MOUNT Derate linearly 4.6 mW/0C for type 2N3019 and 2N3019S; 2.3 mW/0C for type 2N3057A; 2.85 mW/0C for type 2N3700; 6.6 mW/0C for type 2N3700UB for TA +250C. Derate linearly 28.6 mW/0C for type 2N3019 and 2N3019S; 10.3 mW/0C for type
: (978) 689-0803 Website: http: //www.microsemi.com Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 LOW POWER NPN SILICON TRANSISTOR Qualified per MIL-PRF-19500/391 DEVICES LEVELS 2N3019 2N3019S 2N3057A 2N3700 2N3700UB JAN JANTX JANTXV JANS ABSOLUTE MAXIMUM RATINGS (TC = +25C unless otherwise noted) Parameters / Test Conditions Symbol Value Unit Collector-Emitter Voltage VCEO 80 Vdc Collector-Base Voltage VCBO 140 Vdc Emitter-Base Voltage VEBO 7.0 Vdc IC 1.0 Adc Collector Current Total Power Dissipation @ TA = +25C (1) @ TC = +25C (2) W 2N3019; 2N3019S 2N3057A 2N3700, 2N3700UB 2N3019; 2N3019S 2N3057A 2N3700 2N3700UB Operating & Storage Jct Temp Range PT 0.8 0.5 0.5 TJ, Tstg 5.0 1.8 1.0 N/A -65 to +200 TO-05 (2N3019) TO-39 (2N3019S) W C NOTE: 1) Derate linearly 4.6 mW/C for type 2N3019 and 2N3019S; 2.3 mW/C for type 2N3057A; 2.85 mW/C for type 2N3700; 6.6 mW/C for type
2N3700HR Hi-Rel 80 V, 1 A NPN transistor Datasheet - production data Features 1 BVCEO 80 V IC(max) 1A HFE at 10 V - 150 mA >100 2 3 3 3 TO-18 4 1 1 2 2 LCC-3 UB * Hermetic packages Pin 4 in UB is connected to the metallic lid Figure 1. Internal schematic diagram * ESCC qualified * Up to 100 krad(Si) low dose rate Description The 2N3700HR is a NPN transistor specifically designed for aerospace and Hi-Rel applications. It is available in the JAN qualification system (MILPRF19500) and in the ESCC qualification system (ESCC 5000). In case of discrepancies between this datasheet and the relevant agency specification, the latter takes precedence. Table 1. Device summary Device Qualification Agency spec Package Radiation level EPPL - Yes 100 krad SW Yes 2N3700RUBx 100 krad ESCC Target SOC3700HRB - Yes 100 krad SW Yes 100 krad ESCC Target - - 100 krad SW - 100 krad ESCC - 2N3700UBxx 2N3700UBxxSW SOC3700xxSW UB ESCC 5201/004 LCC-3 SOC3700RHRx 2N370
: (978) 689-0803 Website: http: //www.microsemi.com Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 LOW POWER NPN SILICON TRANSISTOR Qualified per MIL-PRF-19500/391 DEVICES LEVELS 2N3019 2N3019S 2N3057A 2N3700 2N3700S 2N3700UB JAN JANTX JANTXV JANS ABSOLUTE MAXIMUM RATINGS (TC = +25C unless otherwise noted) Parameters / Test Conditions Symbol Value Unit Collector-Emitter Voltage VCEO 80 Vdc Collector-Base Voltage VCBO 140 Vdc Emitter-Base Voltage VEBO 7.0 Vdc IC 1.0 Adc Collector Current Total Power Dissipation @ TA = +25C (1) @ TC = +25C (2) W 2N3019; 2N3019S 2N3057A 2N3700, 2N3700UB 2N3019; 2N3019S 2N3057A 2N3700 2N3700UB Operating & Storage Jct Temp Range PT 0.8 0.5 0.5 TJ, Tstg 5.0 1.8 1.0 N/A -65 to +200 TO-39 (TO-205AD) 2N3019, 2N3019S W C TO-18 (TO-206AA) 2N3700 NOTE: 1) Derate linearly 4.6 mW/C for type 2N3019 and 2N3019S; 2.3 mW/C for type 2N3057
his revision shall be completed by 15 October 2002. INCH-POUND MIL-PRF-19500/391G 15 July 2002 SUPERSEDING MIL-PRF-19500/391F 26 March 2001 PERFORMANCE SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, LOW-POWER TYPES 2N3019, 2N3019S, 2N3057A, 2N3700, AND 2N3700UB JAN, JANTX, JANTXV, JANS, JANHC2N3700 AND JANKC2N3700 This specification is approved for use by all Departments and Agencies of the Department of Defense. 1. SCOPE 1.1 Scope. This specification covers the performance requirements for NPN, silicon, low-power transistors. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500. Two levels of product assurance are provided for the unencapsulated device type 2N3700. 1.2 Physical dimensions. See figure 1, 2N3019 (TO-5), 2N3019S (similar to TO-39), figure 2, 2N3057A (TO-46), figure 3, 2N3700 (TO-18), figure 4, 2N3700UB, and figure 5, JANHCA2N3700,.and
istor 2N3678 Q2N3678 BIPOLAR.SLB * * Bipolar Transistor 2N3691 Q2N3691 BIPOLAR.SLB * * Bipolar Transistor 2N3692 Q2N3692 BIPOLAR.SLB * * Bipolar Transistor 2N3693 Q2N3693 BIPOLAR.SLB * * Bipolar Transistor 2N3694 Q2N3694 BIPOLAR.SLB * * Bipolar Transistor 2N3700 Q2N3700 BIPOLAR.SLB * * Bipolar Transistor 2N3702 Q2N3702 BIPOLAR.SLB * * Bipolar Transistor 2N3703 Q2N3703 BIPOLAR.SLB * * Bipolar Transistor 2N3707 Q2N3707 BIPOLAR.SLB * * Bipolar Transistor 2N3708 Q2N3708 BIPOLAR.SLB * * Bipolar Transistor 2N3709 Q2N3709 BIPOLAR.SLB * * Bipolar Transistor 2N3710 Q2N3710 BIPOLAR.SLB * * Bipolar Transistor 2N3711 Q2N3711 BIPOLAR.SLB * * Bipolar Transistor 2N3721 Q2N3721 BIPOLAR.SLB * * Bipolar Transistor 2N3724 Q2N3724 BIPOLAR.SLB * * Bipolar Transistor 2N3724A Q2N3724A BIPOLAR.SLB * * Bipolar Transistor 2N3725 Q2N3725 BIPOLAR.SLB * * Bipolar Transistor 2N3725A Q2N3725A BIPOLAR.SLB * * New for 8.0 Device Type Generic Name Bipolar Transistor Mfg. Name Symbol Name Library 2N3734 Q2N3734 Bipola
2N3700HR Hi-Rel NPN bipolar transistor 80 V - 1 A Features 3 BVCEO 80 V IC (max) 1A HFE at 10 V - 150 mA > 100 Operating temperature range -65C to +200C 1 1 2 2 3 TO-18 LCC-3 3 4 Hi-Rel NPN bipolar transistor 1 2 Linear gain characteristics ESCC qualified European preferred part list - EPPL 100 krad low dose rate Radiation level: lot specific total dose contact marketing for specified level LCC-3UB Figure 1. Internal schematic diagram Description The 2N3700HR is a silicon planar epitaxial NPN transistor in TO-18 and LCC-3 packages. It is specifically designed for aerospace Hi-Rel applications and ESCC qualified according to the 5201-004 specification. In case of conflict between this datasheet and ESCC detailed specification, the latter prevails. Table 1. Device summary Order codes ESCC Part num. 2N37000UB1 - Eng. Model 2N37000UBSW 5201/004/07 ESCC Flight 2N37000UB06 5201/004/06 2N37000UB07 Lead Finish Mass (g) EPPL LCC-3UB Gold 0.0
2N3700 Unit CASE 79-04, STYLE 1 , Collector-Emitter Voltage VcEO 80 80 Vde TO-39 (TO-205AD) 3 1 Collector-Base Voltage VcBO 140 140 Vdc 2 3 Collec Emitter-Base Voltage VEBO 7.0 7.0 Vde onlector Collector Current Continuous Ic 1.0 1.0 Adc Total Device Dissipation @ Ta = 25C Pp 0.8 05 Watts ene Derate above 25C 46 2.85 mWwerc Total Device Dissipation @ Tc = 25C Po 5.0 1.8 Watts 1 Emitter Derate above 25C 28.6 10.6 mwrc Operating and Storage Junction Ty, Tstg 65 to +200 Cc 2N3700* Temperature Range CASE 22-03, STYLE 1 THERMAL CHARACTERISTICS TO-18 (TO-206AA) 3 2N3019 Characteristic Symbol | 2N3020 2N3700 Unit GENERAL TRANSISTORS Thermal Resistance, Junction to Ambient | Raja 217 350 Cw Thermal Resistance, Junction to Case Rye 35 37 "CW NPN SILICON *2N3019 and 2N3700 are Motorola designated ELECTRICAL CHARACTERISTICS (Ta ~ 25C unless otherwise noted.) preterred devices. Characteristic | Symboi Min | Max Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltag
W 0.3W 0.36W 0.36W 2N2696 2N2894 2N2894A 2N2894L 2N2895 2N2896 2N2896X 2N2896X-QR 2N2906 2N2906A 2N2906ACECC 2N2906AX 2N2906CECC 2N2907 2N2907A 2N2907ACECC 2N2907CECC 2N3007 2N3008 2N3011 2N3012 2N3209 2N3209L 2N3209X 2N3250 2N3250A 2N3250X 2N3251 2N3251A 2N3700 2N3701 PRODUCT 2N2222A-220M-ISO 2N2880-220M 2N2880-257-F 2N2907A-220M-ISO 2N5151-220M 2N5153-220M 2N5154-220M 2N5154X-220M 2N5337A-220M 2N5337A-257-F 2N5416-220M 2N5416-257-F BDS10 BDS10-F BDS10CECC BDS10IG-F BDS11 BDS11-F BDS11CECC BDS11IG-F BDS12 BDS12-F BDS12CECC BDS12IG-F BDS13 PNP TO18 (TO206AA) 25V 0.5A 30 1V / 50mA PNP TO18 (TO206AA) 12V 0.2A 40 150 0.5V / 30mA PNP TO18 (TO206AA) 12V 0.2A 40 0.5V / 30mA PNP TO18L 12V 0.2A 40 150 0.5V / 30mA NPN TO18 (TO206AA) 65V 1A 50 5V / 5mA NPN TO18 (TO206AA) 90V 1A 60 200 10V / 150mA NPN TO18 (TO206AA) 90V 1A 60 230 10V / 150mA NPN TO18 (TO206AA) V / 0mA PNP TO18 (TO206AA) 40V 0.6A 40 120 10V / 150mA PNP TO18 (TO206AA) 60V 0.6A 40 120 0.01V / 150mA PNP TO18 (TO206AA) 60V 0.6A 40 120 10V / 150m
2N3700UB Available on commercial versions Low Power NPN Silicon Transistor Qualified per MIL-PRF-19500/391 Qualified Levels: JAN, JANTX, JANTXV, and JANS DESCRIPTION This 2N3700UB NPN ceramic surface mount device is military qualified for high-reliability applications. Important: For the latest information, visit our website http://www.microsemi.com. FEATURES * Surface mount equivalent to JEDEC registered 2N3700 number. * * JAN, JANTX, JANTXV and JANS qualifications are available per MIL-PRF-19500/391. Rad hard levels are also available per MIL-PRF-19500/391. (See RHA datasheet for JANS_2N3700UB.) RoHS compliant versions available (commercial grade only). * UB Package Also available in: TO-18 (TO-206AA) (leaded) 2N3700 APPLICATIONS / BENEFITS * * * * Ceramic UB surface mount package. Lightweight. Low power. Military and other high-reliability applications. TO-39 (TO-205AD) (leaded) 2N3019 TO-5 package (leaded) 2N3019S TO-46 (TO-206AB) (leaded) 2
2N3700 Low Power Transistors NPN Silicon Features * MIL-PRF-19500/391 Qualified * Available as JAN, JANTX, and JANTXV http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS (TA = 25C unless otherwise noted) Characteristic Symbol Value Unit Collector -Emitter Voltage VCEO 80 Vdc Collector -Base Voltage VCBO 140 Vdc Emitter -Base Voltage VEBO 7.0 Vdc Collector Current - Continuous IC 1.0 Adc Total Device Dissipation @ TA = 25C 2N3019, 2N3019S 2N3700 PT Total Device Dissipation @ TC = 25C 2N3019, 2N3019S 2N3700 PT Operating and Storage Junction Temperature Range TJ, Tstg Symbol Thermal Resistance, Junction to Ambient 2N3019, 2N3019S 2N3700 RqJA Thermal Resistance, Junction to Case 2N3019, 2N3019S 2N3700 RqJC 1 EMITTER mW 800 500 W 5.0 1.0 -65 to +200 C Max Unit THERMAL CHARACTERISTICS Characteristic 2 BASE TO-5 CASE 205AA STYLE 1 2N3019 TO-39 CASE 205AB STYLE 1 2N3019S TO-18 CASE 206AA STYLE 1 2N3700 C/W 195 325 C/W 30 150 ORDERING INFORMATION