10CTQ150S-M3, VS-10CTQ150-1-M3 www.vishay.com Vishay Semiconductors High Performance Schottky Rectifier, 2 x 5 A FEATURES * 175 C TJ operation * Center tap configuration * Low forward voltage drop 2 * High frequency operation 1 * High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance 1 3 D2PAK (TO-263AB) 2 TO-262AA 3 Base common cathode 2 Base common cathode 2 * Guard ring for enhanced ruggedness and long term reliability * Meets MSL level 1, per J-STD-020, LF maximum peak of 245 C * Designed and qualified according to JEDEC(R)-JESD 47 2 1 Common 3 Anode cathode Anode 2 1 Common 3 Anode cathode Anode VS-10CTQ150S-M3 VS-10CTQ150-1-M3 * Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION PRIMARY CHARACTERISTICS IF(AV) 2x5A VR 150 V VF at IF 0.93 V IRM 7 mA at 125 C TJ max. 175 C EAS Package Circuit configuration 5 mJ D2PAK (TO-263AB), TO-262AA This center tap Schottky rectifier has be
10CTQ150SPbF, VS-10CTQ150-1PbF www.vishay.com Vishay Semiconductors High Performance Schottky Rectifier, 2 x 5 A VS-10CTQ150SPbF FEATURES VS-10CTQ150-1PbF * 175 C TJ operation * Center tap configuration * Low forward voltage drop * High frequency operation * High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance Base common cathode 2 Base common cathode 2 * Guard ring for enhanced ruggedness and long term reliability 2 1 Common 3 Anode cathode Anode 2 1 Common 3 Anode cathode Anode D2PAK TO-262 * Meets MSL level 1, per J-STD-020, LF maximum peak of 260 C * AEC-Q101 qualified * Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION PRODUCT SUMMARY D2PAK, Package IF(AV) This center tap Schottky rectifier has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 175 C junction temperature. Typical applications ar
10CTQ150S 10CTQ150-1 SCHOTTKY RECTIFIER 10 Amp Major Ratings and Characteristics Description/Features Characteristics Values Units IF(AV) Rectangular 10 A 150 V waveform VRRM This center tap Schottky ectifier has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 175 C junction temperature. Typical applications are in switching power supplies, converters, free-wheeling diodes, and reverse battery protection. 175 C TJ operation IFSM @ tp = 5 s sine 620 A Center tap configuration Low forward voltage drop VF 0.73 V High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance TJ @ 5 Apk, TJ = 125C (per leg) range - 55 to 175 C High frequency operation Guard ring for enhanced ruggedness and long term reliability Case Styles 10CTQ150 10CTQ150S 10CTQ150-1 TO-220 D2PAK TO-262 www.irf.com 1 10CTQ150, 10CTQ150S, 10CTQ150-1 PD-2.291 rev. B 04/99 Voltage Rati
10CTQ150S 10CTQ150-1 SCHOTTKY RECTIFIER 10 Amp Major Ratings and Characteristics Description/Features Characteristics Values Units IF(AV) Rectangular 10 A 150 V waveform VRRM This center tap Schottky ectifier has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 175 C junction temperature. Typical applications are in switching power supplies, converters, free-wheeling diodes, and reverse battery protection. 175 C TJ operation IFSM @ tp = 5 s sine 620 A Center tap configuration Low forward voltage drop VF 0.73 V High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance TJ @ 5 Apk, TJ = 125C (per leg) range - 55 to 175 C High frequency operation Guard ring for enhanced ruggedness and long term reliability Case Styles 10CTQ150 10CTQ150S 10CTQ150-1 TO-220 D2PAK TO-262 www.irf.com 1 10CTQ150, 10CTQ150S, 10CTQ150-1 PD-2.291 rev. B 04/99 Voltage Rati
10CTQ150S 10CTQ150-1 10 Amp SCHOTTKY RECTIFIER Description/ Features Major Ratings and Characteristics Characteristics Values Units IF(AV) Rectangular 10 A VRRM 150 V IFSM @ tp = 5 s sine 620 A 0.73 V - 55 to 175 C This center tap Schottky ectifier has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 175 C junction temperature. Typical applications are in switching power supplies, converters, free-wheeling diodes, and reverse battery protection. waveform VF @ 5 Apk, TJ = 125C TJ range 175 C TJ operation Center tap configuration Low forward voltage drop High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance (per leg) High frequency operation Guard ring for enhanced ruggedness and long term reliability Case Styles 10CTQ150 10CTQ150S Base Common Cathode Base Common Cathode 2 1 Anode 2 Common Cathode Base Common Cathode 2 3 Anode TO-220 www.irf.com 10CTQ15
10CTQ150SPbF/10CTQ150-1PbF Vishay High Power Products Schottky Rectifier (R) FEATURES 10CTQ150-1PbF 10CTQ150SPbF * 175 C TJ operation Available * Center tap configuration RoHS* * Low forward voltage drop COMPLIANT * High frequency operation Base common cathode 2 Base common cathode 2 * High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance * Guard ring for enhanced ruggedness and long term reliability * Lead (Pb)-free ("PbF" suffix) 2 1 Common 3 Anode cathode Anode 2 1 Common 3 Anode cathode Anode D2PAK TO-262 * Designed for industrial level DESCRIPTION This center tap Schottky rectifier has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 175 C junction temperature. Typical applications are in switching power supplies, converters, freewheeling diodes, and reverse battery protection. PRODUCT SUMMARY IF(AV) 10 A VR 150 V MAJOR RATINGS AND CHARACTERISTIC
10CTQ150SPbF 10CTQ150-1PbF SCHOTTKY RECTIFIER 10 Amp IF(AV) = 10Amp VR = 150V Description/ Features Major Ratings and Characteristics Characteristics Values Units IF(AV) Rectangular 10 A VRRM 150 V IFSM @ tp = 5 s sine 620 A VF @ 5 Apk, TJ = 125C 0.73 V TJ range - 55 to 175 C waveform (per leg) This center tap Schottky ectifier has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 175 C junction temperature. Typical applications are in switching power supplies, converters, free-wheeling diodes, and reverse battery protection. 175 C T J operation Center tap configuration Low forward voltage drop High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance High frequency operation Guard ring for enhanced ruggedness and long term reliability Lead-Free ("PbF" suffix) Case Styles 10CTQ150SPbF 10CTQ150-1PbF Base Common Cathode Base Common Cathode 2 1 Anode 2 Common
10CTQ150SPbF 10CTQ150-1PbF SCHOTTKY RECTIFIER 10 Amp IF(AV) = 10Amp VR = 150V Description/ Features Major Ratings and Characteristics Characteristics Values Units IF(AV) Rectangular 10 A VRRM 150 V IFSM @ tp = 5 s sine 620 A VF @ 5 Apk, TJ = 125C 0.73 V TJ range - 55 to 175 C waveform (per leg) This center tap Schottky ectifier has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 175 C junction temperature. Typical applications are in switching power supplies, converters, free-wheeling diodes, and reverse battery protection. 175 C T J operation Center tap configuration Low forward voltage drop High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance High frequency operation Guard ring for enhanced ruggedness and long term reliability Lead-Free ("PbF" suffix) Case Styles 10CTQ150SPbF 10CTQ150-1PbF Base Common Cathode Base Common Cathode 2 1 Anode 2 Common
10CTQ150S-M3, VS-10CTQ150-1-M3 www.vishay.com Vishay Semiconductors High Performance Schottky Rectifier, 2 x 5 A FEATURES * 175 C TJ operation * Center tap configuration * Low forward voltage drop 2 * High frequency operation 1 * High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance 1 3 D2PAK (TO-263AB) 2 TO-262AA 3 Base common cathode 2 Base common cathode 2 * Guard ring for enhanced ruggedness and long term reliability * Meets MSL level 1, per J-STD-020, LF maximum peak of 245 C * Designed and qualified according to JEDEC(R)-JESD 47 2 1 Common 3 Anode cathode Anode 2 1 Common 3 Anode cathode Anode VS-10CTQ150S-M3 VS-10CTQ150-1-M3 * Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION PRIMARY CHARACTERISTICS IF(AV) 2x5A VR 150 V VF at IF 0.93 V IRM 7 mA at 125 C TJ max. 175 C EAS Package Circuit configuration 5 mJ D2PAK (TO-263AB), TO-262AA This center tap Schottky rectifier has be
10CTQ150S 10CTQ150-1 10 Amp SCHOTTKY RECTIFIER Description/ Features Major Ratings and Characteristics Characteristics Values Units IF(AV) Rectangular 10 A VRRM 150 V IFSM @ tp = 5 s sine 620 A VF 0.73 V - 55 to 175 C This center tap Schottky ectifier has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 175 C junction temperature. Typical applications are in switching power supplies, converters, free-wheeling diodes, and reverse battery protection. waveform 175 C TJ operation Center tap configuration Low forward voltage drop @ 5 Apk, TJ = 125C High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance (per leg) High frequency operation TJ range Guard ring for enhanced ruggedness and long term reliability Case Styles 10CTQ150 10CTQ150S Base Common Cathode Base Common Cathode 2 1 Anode 2 Common Cathode TO-220 www.irf.com 10CTQ150 -1 Base Common Cathode 2 3 A
10CTQ150S 10CTQ150-1 10 Amp SCHOTTKY RECTIFIER Description/ Features Major Ratings and Characteristics Characteristics Values Units IF(AV) Rectangular 10 A VRRM 150 V IFSM @ tp = 5 s sine 620 A 0.73 V - 55 to 175 C This center tap Schottky ectifier has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 175 C junction temperature. Typical applications are in switching power supplies, converters, free-wheeling diodes, and reverse battery protection. waveform VF @ 5 Apk, TJ = 125C TJ range 175 C TJ operation Center tap configuration Low forward voltage drop High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance (per leg) High frequency operation Guard ring for enhanced ruggedness and long term reliability Case Styles 10CTQ150 10CTQ150S Base Common Cathode Base Common Cathode 2 1 Anode 2 Common Cathode 10CTQ150 -1 Base Common Cathode 2 3 Anode TO-220 Documen
10CTQ150S 10CTQ150-1 10 Amp SCHOTTKY RECTIFIER Description/ Features Major Ratings and Characteristics Characteristics Values Units IF(AV) Rectangular 10 A VRRM 150 V IFSM @ tp = 5 s sine 620 A VF 0.73 V - 55 to 175 C This center tap Schottky ectifier has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 175 C junction temperature. Typical applications are in switching power supplies, converters, free-wheeling diodes, and reverse battery protection. waveform 175 C TJ operation Center tap configuration Low forward voltage drop @ 5 Apk, TJ = 125C High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance (per leg) High frequency operation TJ range Guard ring for enhanced ruggedness and long term reliability Case Styles 10CTQ150 10CTQ150S Base Common Cathode Base Common Cathode 2 1 Anode 2 Common Cathode TO-220 www.irf.com 10CTQ150 -1 Base Common Cathode 2 3 A
10CTQ150SPbF, VS-10CTQ150-1PbF www.vishay.com Vishay Semiconductors High Performance Schottky Rectifier, 2 x 5 A VS-10CTQ150SPbF FEATURES VS-10CTQ150-1PbF * 175 C TJ operation * Center tap configuration * Low forward voltage drop * High frequency operation * High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance Base common cathode 2 Base common cathode 2 * Guard ring for enhanced ruggedness and long term reliability 2 1 Common 3 Anode cathode Anode 2 1 Common 3 Anode cathode Anode D2PAK TO-262 * Meets MSL level 1, per J-STD-020, LF maximum peak of 260 C * AEC-Q101 qualified * Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION PRODUCT SUMMARY D2PAK, Package IF(AV) This center tap Schottky rectifier has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 175 C junction temperature. Typical applications ar
10CTQ150S/10CTQ150-1 Vishay High Power Products Schottky Rectifier, 2 x 5 A FEATURES 10CTQ150-1 10CTQ150S * 175 C TJ operation * Center tap configuration * Low forward voltage drop * High frequency operation Base common cathode 2 Base common cathode 2 * High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance * Guard ring for enhanced ruggedness and long term reliability * Designed and qualified for industrial level Anode 2 Common Anode 1 cathode 3 Anode 2 Common Anode 1 cathode 3 D2PAK DESCRIPTION This center tap Schottky rectifier has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 175 C junction temperature. Typical applications are in switching power supplies, converters, freewheeling diodes, and reverse battery protection. TO-262 PRODUCT SUMMARY IF(AV) 2x5A VR 150 V MAJOR RATINGS AND CHARACTERISTICS SYMBOL IF(AV) CHARACTERISTICS VALUES Rectangular
10CTQ150S 10CTQ150-1 SCHOTTKY RECTIFIER Major Ratings and Characteristics 10 Amp Description/Features TO-220 D?PAK TO-262 This center tap Schottky ectifier has been optimized for low Characteristics Values Units reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 175 C junction | Rectangular 10 A temperature. Typical applications are in switching power FIAV) supplies, converters, free-wheeling diodes, and reverse waverorm battery protection. VarM 150 Vv 175 CT, operation ; e Centertap configuration lrsq @ tp=5Syussine 620 A e Lowforward voltage drop 6 e High purity, high temperature epoxy encapsulation for Ve @5Apk, Ty 125C 0.73 Vv enhanced mechanical strength and moisture resistance (perleg) e High frequency operation T range -55t0175 C e Guard ring for enhanced ruggedness and long term J reliability Case Styles 10CTQ150 10CTQ150S 10CTQ150-1 www.irf.com10CTQ150, 10CTQ150S, 10CTQ150-1 International PD-2.291 rev.B 04