TIP29AF; TIP29BF ~----- ~ TIP29CF; TIP29DF ~ PHILIPS INTERNATIONAL SbE D MM 7420826 0043452 116 MEPHIN SILICON EPITAXIAL POWER TRANSISTORS 33-07" NPN silicon power transistors ina SOT 186 envelope with an electrically insulated mounting base, intended for use in audio output stages, general purpose amplifier and high-speed switching applications. PNP complements are TIP30F, TIPSOAF, TIP3OBF, TIP30CF and TIP30DF. QUICK REFERENCE DATA TIP29F | 29AF | 29BF | 29CF | 29DF Collector-base voltage (open emitter) VcBpo max. 80 100 | 120 | 140 | 160 V Coilector-emitter voltage (open base) VceEQ max. 40 60 80 | 100 | 120 V Emitter-base voltage (open collector) VEBO max. 5 5 5 5 5 V Collector current d.c. Ic max. 3 3 3 3 3A peak value Icom max, 7 7 7 7 7A Total power dissipation up to Tp = 25 C Prot max. 19 19 19 19 19 W D.C. current gain Ic=1A;Vee=4V hee 15 to 75 Transition frequency at f = 1 MHz Ic =0,2A;Vcee = 10V fT min. 3 MHz Fig.1 SOT186. Dimensions in mm r~ 10,2 max> 5,7 maxp > mi oad - 34 Mer o's ~ <

L POWER TRANSISTORS T-33-17 PNP silicon power transistor ina SOT 186 envelope with an electrically insulated mounting base, for use in audio output stages and for general purpose amplifier and high-speed switching applications. NPN complements are TIP29F, TIP29AF, TIP29BF, TIP29CF and TIP29DF. QUICK REFERENCE DATA Collector-base voltage TIP3OF | 30AF| 30BF | 30CF| 30DF {open emitter) -VcBO max. 80 100 | 120 | 140 | 160 V Collector-emitter voltage {open base) -VcEQ max. 40 60 80 | 100 | 120 V Emitter-base voitage (open collector) VEBO max. 5 5 5 5 5 Vv Collector current d.c. I max. 3 3 3 3 3 A peak value lcem max, 7 7 7 7 7A Total power dissipation up to Ty, = 25 9C Prot max. 19 19 19 19 19 W D.C. current gain lc=1A;~VcE=4V hee 15 to 75 Transition frequency at f = 1 MHz l =0,2 A;-Vce=10V fT min. 3 MHz Fig.1 SOT 186. Dimensions in mm r+ 10,2 max> q 66 5,7 maxp- | max 32 *r o's >| ry max i roy 7 44 f NY t E-y) 78 1 4 17 max 3 3,5 4 nof tinned . fh t 1,5 max 13.8 1 |) 2U) 31: aca llt tl os Fissse a c