TIP29A / TIP29C NPN Epitaxial Silicon Transistor Features * Medium Power Linear Switching Applications * Complementary to TIP30 Series TO-220 1 1.Base 2.Collector 3.Emitter Ordering Information Part Number Top Mark Package Packing Method TIP29 TIP29 TO-220 3L (Single Gauge) Bulk TIP29A TIP29A TO-220 3L (Single Gauge) Bulk TIP29C TIP29C TO-220 3L (Single Gauge) Bulk TIP29CTU TIP29C TO-220 3L (Single Gauge) Rail Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TC = 25C unless otherwise noted. Symbol VCBO VCEO Parameter Collector-Base Voltage Collector-Emitter Voltage Value TIP29 40 TIP29A

ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. TIP29 / TIP29A / TIP29C NPN Epitaxial Silicon Transistor Features * Medium Power Linear Switching Applications * Complementary to TIP30 Series TO-220 1 1.Base 2.Collector 3.Emitter Ordering Information Part Number Top Mark Package Packing Method TIP29 TIP29 TO-220 3L (Single Gauge) Bulk TIP29A TIP29A TO-220 3L (Single Gauge) Bulk TIP29C TIP29C TO-220 3L (Single Gauge) Bulk TIP29CTU TIP29C TO-220 3L (Single Gauge) Rail Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operatin

TIP29A/TIP29B/TIP29C NPN Epitaxial Silicon Transistor Features * Complementary to TIP30/TIP30A/TIP30B/TIP30C 1. Base 2. Collector 3. Emitter Absolute Maximum Ratings TC=25C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage : TIP29 : TIP29A : TIP29B : TIP29C 40 60 80 100 V V V V VCEO Collector-Emitter Voltage : TIP29 : TIP29A : TIP29B : TIP29C 40 60 80 100 V V V V VEBO Emitter-Base Voltage 5 V IC Collector Current (DC) 1 A ICP Collector Current (Pulse) 3 A IB Base Current 0.4 A PC Collector Dissipation (TC=25C) 30 W Collector Dissipation (Ta=25C) 2 W TJ Junction Temperature 150 C TSTG Storage Temperature - 65 ~ 150 C (c) 2008 Fairchild Semiconductor Corporation TIP29/TIP29A/TIP29B/TIP29C Rev. A www.fairchildsemi.com 1 TIP29/TIP29A/TIP29B/TIP29C -- NPN Epitaxial Silicon Transistor July 2008 Symbol VCEO(sus) ICEO ICES Parameter *Collector-Emitter Sustaining Voltage : TIP29 : TIP29A : TIP29B : TIP29C Collec

TIP29A / TIP29C NPN Epitaxial Silicon Transistor Features * Medium Power Linear Switching Applications * Complementary to TIP30 Series TO-220 1 1.Base 2.Collector 3.Emitter Ordering Information Part Number Top Mark Package Packing Method TIP29 TIP29 TO-220 3L (Single Gauge) Bulk TIP29A TIP29A TO-220 3L (Single Gauge) Bulk TIP29C TIP29C TO-220 3L (Single Gauge) Bulk TIP29CTU TIP29C TO-220 3L (Single Gauge) Rail Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TC = 25C unless otherwise noted. Symbol VCBO VCEO Parameter Collector-Base Voltage Collector-Emitter Voltage Value TIP29 40 TIP29A

TIP29A TIP29C NPN power transistors Features . NPN transistors Applications Audio, linear and switching applications Description 1 The devices are manufactured in Planar technology with "Base Island" layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage. The PNP types are TIP30A and TIP30C. Table 1. 2 3 TO-220 Figure 1. Internal schematic diagram Device summary Order codes Marking Package Packaging TIP29A TIP29C TIP29A TIP29C TO-220 TO-220 Tube Tube July 2007 Rev 2 1/9 www.st.com 9 Absolute maximum ratings 1 Absolute maximum ratings Table 2. Absolute maximum ratings Symbol Value Parameter Unit TIP29A TIP29C VCBO Collector-base voltage (IE = 0) 60 100 V VCEO Collector-emitter voltage (IB = 0) 60 100 V VEBO Emitter-base voltage (IC = 0) 5 V Collector current 1 A Collector peak current (tp < ms) 3 A Base current 0.4 A PTOT Total dissipation at Tc 25C Total dissipation at Tamb 25C 30 2 W W Tstg Storage

TIP29A / TIP29C NPN Epitaxial Silicon Transistor Features * Medium Power Linear Switching Applications * Complementary to TIP30 Series TO-220 1 1.Base 2.Collector 3.Emitter Ordering Information Part Number Top Mark Package Packing Method TIP29 TIP29 TO-220 3L (Single Gauge) Bulk TIP29A TIP29A TO-220 3L (Single Gauge) Bulk TIP29C TIP29C TO-220 3L (Single Gauge) Bulk TIP29CTU TIP29C TO-220 3L (Single Gauge) Rail Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TC = 25C unless otherwise noted. Symbol VCBO VCEO Parameter Collector-Base Voltage Collector-Emitter Voltage Value TIP29 40 TIP29A

TIP29A TIP29C NPN power transistors Features . NPN transistors Applications Audio, linear and switching applications Description 1 The devices are manufactured in Planar technology with "Base Island" layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage. The PNP types are TIP30A and TIP30C. Table 1. 2 3 TO-220 Figure 1. Internal schematic diagram Device summary Order codes Marking Package Packaging TIP29A TIP29C TIP29A TIP29C TO-220 TO-220 Tube Tube July 2007 Rev 2 1/9 www.st.com 9 Absolute maximum ratings 1 Absolute maximum ratings Table 2. Absolute maximum ratings Symbol Value Parameter Unit TIP29A TIP29C VCBO Collector-base voltage (IE = 0) 60 100 V VCEO Collector-emitter voltage (IB = 0) 60 100 V VEBO Emitter-base voltage (IC = 0) 5 V Collector current 1 A Collector peak current (tp < ms) 3 A Base current 0.4 A PTOT Total dissipation at Tc 25C Total dissipation at Tamb 25C 30 2 W W Tstg Storage

TIP29A, TIP29B, TIP29C NPN SILICON POWER TRANSISTORS Copyright (c) 1997, Power Innovations Limited, UK JULY 1968 - REVISED MARCH 1997 Designed for Complementary Use with the TIP30 Series TO-220 PACKAGE (TOP VIEW) 30 W at 25C Case Temperature 1 A Continuous Collector Current B 1 3 A Peak Collector Current C 2 Customer-Specified Selections Available E 3 Pin 2 is in electrical contact with the mounting base. MDTRACA absolute maximum ratings at 25C case temperature (unless otherwise noted) RATING SYMBOL TIP29 Collector-base voltage (IE = 0) Collector-emitter voltage (IB = 0) TIP29A TIP29B VCBO 100 120 TIP29C 140 40 TIP29A TIP29B VCEO TIP29C Continuous collector current Peak collector current (see Note 1) Continuous base current Continuous device dissipation at (or below) 25C case temperature (see Note 2) Continuous device dissipation at (or below) 25C free air temperature (see Note 3) Unclamped inductive load energy (see Note 4) Operating junction temperature range Storage t

TIP29A TIP29C NPN power transistors Features . NPN transistors Applications Audio, linear and switching applications Description 1 The devices are manufactured in Planar technology with "Base Island" layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage. The PNP types are TIP30A and TIP30C. Table 1. 2 3 TO-220 Figure 1. Internal schematic diagram Device summary Order codes Marking Package Packaging TIP29A TIP29C TIP29A TIP29C TO-220 TO-220 Tube Tube Rev 2 1/9 9 Absolute maximum ratings 1 Absolute maximum ratings Table 2. Absolute maximum ratings Symbol Value Parameter Unit TIP29A TIP29C VCBO Collector-base voltage (IE = 0) 60 100 V VCEO Collector-emitter voltage (IB = 0) 60 100 V VEBO Emitter-base voltage (IC = 0) 5 V Collector current 1 A Collector peak current (tp < ms) 3 A Base current 0.4 A PTOT Total dissipation at Tc 25C Total dissipation at Tamb 25C 30 2 W W Tstg Storage temperature -65 to 15

m Power Linear Switching Applications * Complementary to TIP30/30A/30B/30C TO-220 1 1.Base NPN Epitaxial Silicon Transistor 2.Collector 3.Emitter Absolute Maximum Ratings TC=25C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter : TIP29 : TIP29A : TIP29B : TIP29C Value 40 60 80 100 Units V V V V 40 60 80 100 V V V V V VCEO Collector-Emitter Voltage : TIP29 : TIP29A : TIP29B : TIP29C VEBO Emitter-Base Voltage 5 IC Collector Current (DC) 1 A ICP Collector Current (Pulse) 3 A IB Base Current PC Collector Dissipation (TC=25C) Collector Dissipation (Ta=25C) 0.4 A 30 W 2 W TJ Junction Temperature 150 C TSTG Storage Temperature - 65 ~ 150 C Electrical Characteristics TC=25C unless otherwise noted Symbol VCEO(sus) ICEO ICES Parameter *Collector-Emitter Sustaining Voltage : TIP29 : TIP29A : TIP29B : TIP29C Collector Cut-off Current : TIP29/29A : TIP29B/29C Test Condition IC = 30mA, IB = 0 Min. Max. 40 60 80 100 Units V V V V VCE = 30V, IB = 0 VCE = 60V, IB = 0 0.

IIIII IIII IIII IIIIIIIIIIIIIIII IIIIIIIIIIIIIIII IIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIII IIII IIIIIIIIIIII IIII IIIIIIIIIIIIIIII IIII IIIIIIIIIIII IIII IIIIIIIIIIIIIIII IIIIIIIIIIIIIIII IIII MAXIMUM RATINGS Symbol TIP29 TIP30 TIP29A TIP30A TIP29B TIP30B TIP29C TIP30C Unit VCEO 40 60 80 100 Vdc Collector - Base Voltage VCB 40 60 80 100 Vdc Emitter - Base Voltage Rating Collector - Emitter Voltage VEB 5.0 Vdc Collector Current - Continuous - Peak IC 1.0 3.0 Adc Base Current IB 0.4 Adc Total Power Dissipation @ TC = 25C Derate above 25C PD 30 0.24 W W/C Total Power Dissipation @ TA = 25C Derate above 25C PD 2.0 0.016 W W/C Unclamped Inductive Load Energy (Note 1) E 32 mJ Operating and Storage Junction Temperature Range TJ, Tstg C -65 to +150 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction-to-Ambient RqJA 62.5 C/W Thermal Resistance, Junction-to-Case RqJC 4.167 C/W Stresses exceeding Maximum Ratings may damage the device. Maximum Ratin

83 TIP152 MJE13007 3-950 TIPA2C TIP42C 3-1083 TIP160 MJE5740 3-914 TIP42D MJE15031 3-972 TIP161 MJE5741 3-914 TIP42E MJE1503? 3-972 TIP162 MJE5742 3-914 TIP42F MJE15031 3-972 TIP29 TIP29 3-1071 TIP47 TIP4? 3-1087 TIP2955, TIP2955 3-1108 TIP48 TIP48 3-1087 TIP29A TIP23A 3-1071 TIP49 TIP4S 3-1087 TIP29B TIP23B 3-1071 TIP5O TIP50O 3-1087 TIP29C TIP29C 3-1071 TIP510 MJ15011 3-716 TIP29D MJE15030 3-972 TIP511 MJ15011 3716 TIP29E MJE15030 3-972 TIP512 MJ15011 3-716 TIP29F MJE15030 3-972 TIP513 MJ15012 3-716 TIP30 TIP30 3-1071 TIP514 MJE15030 3-972 TIP3055 TIP3055 3-1108 TIPS17 2N6339 3-188 TIP30A TIP30A 3-1071 TIPS18 2N6341 3-188 TIP30B TIP30B 31071 TIP519 MJ15012 3-716 TIP30C TIP30C 3-1071 TIP520 MJ15012 3-716 TIP30D MJE15031 3-972 TIPS21 2N6211 3-161 TIP30E MJE15031 3-972 TIP522 2N6211 3-161 TIP30F MJE15031 3-972 TIP523 MJ15012 3-716 TIP31 TIP31 3-1073 TIP524 2N5497 3211 TIP31A TIP31A 3-1073 TIP525 MJ15011 3-716 TIP31B TIP31B 3-1073 TIP526 MJ15011 3-716 TIP31C TIP31C 3-1073 TIP527 MJ15012 3-716 TIP31

TIP29A, TIP29B, TIP29C NPN SILICON POWER TRANSISTORS TO-220 PACKAGE (TOP VIEW) O Pin 2 is in electrical contact with the mounting base. at 25C case temperature (unless otherwise noted) RATING SYMBOL VALUE UNIT TIP29 80 Collector-base voltage (Ip = 0) TIP29A Vecso 100 Vv TIP29B 120 TIP29C 140 TIP29 40 Collector-emitter voltage (lp = 0) TIP29A VcEo 60 Vv TIP29B 80 TIP29C 100 Emitter-base voltage VEBo 5 Vv Continuous collector current lo 1 A Peak collector current (see Note 1) lom 3 A Continuous base current lB 0.4 A Continuous device dissipation at (or below) 25C case temperature (see Note 2) Prot 30 WwW Continuous device dissipation at (or below) 25C free air temperature (see Note 3) Prot 2 WwW Unclamped inductive load energy (see Note 4) VYoLIo? 32 mJ Operating junction temperature range Tj -65 to +150 C Storage temperature range Tstg -65 to +150 C Lead temperature 3.2 mm from case for 10 seconds TL 250 C NOTES: 1. This value applies for t, < 0.3 ms, duty cycle < 10%. 2.

TIP29A, TIP29B, TIP29C NPN SILICON POWER TRANSISTORS Designed for Complementary Use with the TIP30 Series 30 W at 25C Case Temperature 1 A Continuous Collector Current B 1 3 A Peak Collector Current C 2 Customer-Specified Selections Available E 3 TO-220 PACKAGE (TOP VIEW) Pin 2 is in electrical contact with the mounting base. MDTRACA absolute maximum ratings at 25C case temperature (unless otherwise noted) RATING Collector-base voltage (IE = 0) SYMBOL TIP29 80 TIP29A 100 TIP29B V CBO 140 TIP29 40 TIP29B VCEO UNIT 120 TIP29C TIP29A Collector-emitter voltage (IB = 0) VALUE 60 80 V V 100 TIP29C VEBO 5 V IC 1 A ICM 3 A IB 0.4 A Continuous device dissipation at (or below) 25C case temperature (see Note 2) Ptot 30 W Continuous device dissipation at (or below) 25C free air temperature (see Note 3) Ptot 2 W 1/2LIC2 32 mJ C Emitter-base voltage Continuous collector current Peak collector current (see Note 1) Continuous base current Unclamped inductive load energy (see Note 4) Ope

TIP29AF; TIP29BF ~----- ~ TIP29CF; TIP29DF ~ PHILIPS INTERNATIONAL SbE D MM 7420826 0043452 116 MEPHIN SILICON EPITAXIAL POWER TRANSISTORS 33-07" NPN silicon power transistors ina SOT 186 envelope with an electrically insulated mounting base, intended for use in audio output stages, general purpose amplifier and high-speed switching applications. PNP complements are TIP30F, TIPSOAF, TIP3OBF, TIP30CF and TIP30DF. QUICK REFERENCE DATA TIP29F | 29AF | 29BF | 29CF | 29DF Collector-base voltage (open emitter) VcBpo max. 80 100 | 120 | 140 | 160 V Coilector-emitter voltage (open base) VceEQ max. 40 60 80 | 100 | 120 V Emitter-base voltage (open collector) VEBO max. 5 5 5 5 5 V Collector current d.c. Ic max. 3 3 3 3 3A peak value Icom max, 7 7 7 7 7A Total power dissipation up to Tp = 25 C Prot max. 19 19 19 19 19 W D.C. current gain Ic=1A;Vee=4V hee 15 to 75 Transition frequency at f = 1 MHz Ic =0,2A;Vcee = 10V fT min. 3 MHz Fig.1 SOT186. Dimensions in mm r~ 10,2 max> 5,7 maxp > mi oad - 34 Mer o's ~ <