STP12NM50N N-channel 500V - 0.29 - 11A - TO-220 /FP- D2PAK - DPAK Second generation MDmeshTM Power MOSFET General features Type VDSS (@Tjmax) RDS(on) ID STB12NM50N 550V <0.38 11A STD12NM50N 550V <0.38 11A STF12NM50N 550V <0.38 11A (1) STP12NM50N 550V <0.38 11A 100% avalanche tested Low input capacitance and gate charge Low gate input resistancel 3 1 3 1 DPAK 2 TO-220 3 3 1 DPAK 2 1 TO-220FP Description This series of devices is realized with the second generation of MDmeshTM Technology. This revolutionary MOSFET associates a new vertical structure to the Company's strip layout to yield one of the world's lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters Internal schematic diagram Applications Switching application Order codes Part number Marking Package Packaging STB12NM50N B12NM50N DPAK Tape & reel STD12NM50N D12NM50N DPAK Tape & reel STF12NM50N F12NM50N TO-220FP Tube STP12NM50N P12NM50N TO-220 Tube April 20

STP12NM50N N-channel 500V - 0.29 - 11A - TO-220 /FP- D2PAK - DPAK Second generation MDmeshTM Power MOSFET General features Type VDSS (@Tjmax) RDS(on) ID STB12NM50N 550V <0.38 11A STD12NM50N 550V <0.38 11A STF12NM50N 550V <0.38 11A (1) STP12NM50N 550V <0.38 11A 100% avalanche tested Low input capacitance and gate charge Low gate input resistancel 3 1 3 1 DPAK 2 TO-220 3 3 1 DPAK 2 1 TO-220FP Description The STx12NM50N is realized with the second generation of MDmeshTM Technology. This revolutionary MOSFET associates a new vertical structure to the Company's strip layout to yield one of the world's lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters Internal schematic diagram Applications Switching application Order codes Sales Type Marking Package Packaging STB12NM50N B12NM50N DPAK TAPE & REEL STD12NM50N D12NM50N DPAK TAPE & REEL STF12NM50N F12NM50N TO-220FP TUBE STP12NM50N P12NM50N TO-220 TUBE March 2006 Rev 5

STP12NM50N N-channel 500V - 0.29 - 11A - TO-220 /FP- D2PAK - DPAK Second generation MDmeshTM Power MOSFET General features Type VDSS (@Tjmax) RDS(on) ID STB12NM50N 550V <0.38 11A STD12NM50N 550V <0.38 11A STF12NM50N 550V <0.38 11A (1) STP12NM50N 550V <0.38 11A 100% avalanche tested Low input capacitance and gate charge Low gate input resistancel 3 1 3 1 DPAK 2 TO-220 3 3 1 DPAK 2 1 TO-220FP Description This series of devices is realized with the second generation of MDmeshTM technology. This revolutionary Power MOSFET associates a new vertical structure to the company's strip layout to yield one of the world's lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters Internal schematic diagram Applications Switching application Order codes Part number Marking Package Packaging STB12NM50N B12NM50N DPAK Tape & reel STD12NM50N D12NM50N DPAK Tape & reel STF12NM50N F12NM50N TO-220FP Tube STP12NM50N P12NM50N TO-220 Tube No

STP12NM50N - STF12NM50N STB12NM50N - STD12NM50N N-CHANNEL 500V - 0.33 - 11 A TO-220/FP/D2PAK/DPAK SECOND GENERATION MDmeshTM MOSFET TARGET SPECIFICATION Table 1: General Features Figure 1: Package TYPE VDSS RDS(on) ID STB12NM50N STD12NM50N STF12NM50N STP12NM50N 500 V 500 V 500 V 500 V < 0.38 < 0.38 < 0.38 < 0.38 11 A 11 A 11 A (*) 11 A WORLD'S LOWEST ON RESISTANCE TYPICAL R DS(on) = 0.33 100% AVALANCHE TESTED LOW INPUT CAPACITANCE AND GATE CHARGE LOW GATE INPUT RESISTANCE 3 1 3 1 TO-220 2 D2PAK 3 3 1 1 DESCRIPTION The STP12NM50N is realized with the second generation of MDmesh Technology. This revolutionary MOSFET associates a new vertical structure to the Company's strip layout to yield the world's lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters DPAK 2 TO-220FP Figure 2: Internal Schematic Diagram APPLICATIONS The MDmeshTM II family is very suitable for increasing power density of high voltage converters a

STP12NM50N N-channel 500 V, 0.29 , 11 A MDmeshTM II Power MOSFET TO-220 - DPAK - D2PAK - I2PAK - TO-220FP Features Type VDSS (@Tjmax) RDS(on) max ID 3 STB12NM50N 550 V 0.38 11 A STD12NM50N 550 V 0.38 11 A STI12NM50N 550 V 0.38 11 A STF12NM50N 550 V 0.38 11 A (1) STP12NM50N 550 V 0.38 11 A 1 3 12 2 IPAK TO-220 3 1 DPAK 3 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Application 3 1 1 DPAK Figure 1. 2 TO-220FP Internal schematic diagram Switching applications Description This series of devices is realized with the second generation of MDmeshTM technology. This revolutionary Power MOSFET associates a new vertical structure to the company's strip layout to yield one of the world's lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. Table 1. Device summary Order codes Marking Package Packaging STB12NM50N B12NM50N DPAK Tape and reel STD12NM50N D12NM50N DPAK Tape and reel STI12NM50N I12NM50

STP12NM50N N-channel 500 V, 0.29 , 11 A MDmeshTM II Power MOSFET TO-220 - DPAK - D2PAK - I2PAK - TO-220FP Features Type VDSS (@Tjmax) RDS(on) max ID STB12NM50N 550 V 0.38 11 A STD12NM50N 550 V 0.38 11 A STI12NM50N 550 V 0.38 11 A STF12NM50N 550 V 0.38 11 A (1) STP12NM50N 550 V 0.38 11 A 3 12 2 IPAK TO-220 3 DPAK r P e 1 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Application t e l o DPAK ) (s Switching applications u d o 1 3 ) s ( ct 3 1 s b O Figure 1. 3 1 2 TO-220FP Internal schematic diagram t c u Description d o r This series of devices is realized with the second generation of MDmeshTM technology. This revolutionary Power MOSFET associates a new vertical structure to the company's strip layout to yield one of the world's lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. P e t e l o s b O Table 1. Device summary Order codes Marking Package Packaging STB12NM50N B12NM50N DPAK T

STP12NM50N - STF12NM50N STB12NM50N - STD12NM50N N-CHANNEL 500V - 0.33 - 11 A TO-220/FP/D2PAK/DPAK SECOND GENERATION MDmeshTM MOSFET Table 1: General Features Figure 1: Package TYPE VDSS (@Tjmax) RDS(on) ID STB12NM50N STD12NM50N STF12NM50N STP12NM50N 550 V 550 V 550 V 550 V < 0.38 < 0.38 < 0.38 < 0.38 11 A 11 A 11 A (*) 11 A 100% AVALANCHE TESTED LOW INPUT CAPACITANCE AND GATE CHARGE LOW GATE INPUT RESISTANCE DESCRIPTION The STx12NM50N is realized with the second generation of MDmesh Technology. This revolutionary MOSFET associates a new vertical structure to the Company's strip layout to yield one of the world's lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters 3 1 3 1 TO-220 2 D2PAK 3 3 1 1 DPAK 2 TO-220FP Figure 2: Internal Schematic Diagram APPLICATIONS The MDmeshTM II family is very suitable for increasing power density of high voltage converters allowing system miniaturization and higher efficiencies. Table 2: Order

STP12NM50N - STF12NM50N STB12NM50N - STD12NM50N N-CHANNEL 500V - 0.33 - 11 A TO-220/FP/D2PAK/DPAK SECOND GENERATION MDmeshTM MOSFET TARGET SPECIFICATION Table 1: General Features Figure 1: Package TYPE VDSS RDS(on) ID STB12NM50N STD12NM50N STF12NM50N STP12NM50N 500 V 500 V 500 V 500 V < 0.38 < 0.38 < 0.38 < 0.38 11 A 11 A 11 A (*) 11 A WORLD'S LOWEST ON RESISTANCE TYPICAL R DS(on) = 0.33 100% AVALANCHE TESTED LOW INPUT CAPACITANCE AND GATE CHARGE LOW GATE INPUT RESISTANCE 3 1 3 1 TO-220 2 D2PAK 3 3 1 1 DESCRIPTION The STP12NM50N is realized with the second generation of MDmesh Technology. This revolutionary MOSFET associates a new vertical structure to the Company's strip layout to yield the world's lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters DPAK 2 TO-220FP Figure 2: Internal Schematic Diagram APPLICATIONS The MDmeshTM II family is very suitable for increasing power density of high voltage converters a

.3 0.34 0.38 0.65 0.85 0.85 1.14 1.5 22 22 18 20 15 14 11 8 8 8 5 5 88 88 72 80 60 56 44 32 32 32 20 20 160 40 140 250 50 160 100 134 74 40 73 35 ST ST ST FCH TOSH ST ST FCH TOSH TOSH FCH TOSH STP25NM50N STF25NM50N STP21NM50N FDP20N50 2SK3934 STP15NK50ZFP STP12NM50N IRF840B 2SK3759 2SK3561 FQP5N50C 2SK3563 IRFZ24NPBF IRFZ24VPBF IRFZ34EPBF IRFZ34VPBF IRFZ34NPBF IRFZ44PBF IRFZ44VZPBF TO-220AB TO-220AB TO-220AB TO-220AB TO-220AB TO-220AB TO-220AB IR IR IR IR IR VISH IR 865-0160 865-9222 865-0187 865-9257 865-0195 865-9281 821-0578 550 0.35 12 48 160 ST STP12NM50 600 600 600 600 600 600 600 600 600 600 600 600 600 600 600 0.26 0.38 0.43 0.53 0.6 0.75 0.95 0.95 1 1 1.25 2 2.2 3.6 4.5 16 11 13 12 9.5 10 7 7 7.5 3.9 6 4 3.5 1.35 2 48 44 52 48 38 40 28 28 30 11.7 24 16 14 8 5 167 25 50 225 156 45 30 30 147 50 40 25 35 54 25 FCH ST TOSH FCH FCH TOSH ST ST FCH FCH TOSH ST TOSH FCH TOSH FCP16N60 STF12NM50N 2SK3797 FQP12N60C FQP10N60C 2SK3569 STF9NK60ZD STP9NK60ZFP FQP8N60C FCP4N60 2SK3562 STP4NK60ZFP 2SK356

STripFET II 250 15.7 0.165 DPAK STP12NK30Z SuperMESHTM 300 9 0.4 TO-220 STP7NK30Z SuperMESH 300 5.7 0.9 DPAK SuperFREDmeshTM 500 3 2.7 DPAK/IPAK SuperFREDmesh 500 3 2.7 TO-220 STD6NK50ZT4 SuperMESH 500 5.6 1.2 DPAK STB9NK50ZT4 SuperMESH 500 7.2 0.85 DPAK STP12NM50N MDmeshTM II 500 11 0.38 TO-220 STP14NK50Z SuperMESH 500 14 0.38 TO-220 STP20NM50FD FDmeshTM 500 20 0.25 TO-220 STB21NM60N MDmesh II 600 17 0.24 DPAK STP21NM50N MDmesh II 500 18 0.19 TO-220 STW29NK50ZD SuperFREDmesh 500 29 0.13 TO-247 STW45NM50FD SuperFREDmesh 500 45 0.1 TO-247 Part Number STD4NK50ZD/-1 STP4NK50ZD Brushless AC PMSM, stepper motor 20 Power Power MOSFETs (cont'd) Part Number STY60NM50 Description Motor type BVDSS (V) ID (A) RDS(on) max @ 10 V () Package MDmesh II 500 60 0.05 Max247TM STD5NK52ZD/-1 SuperFREDmesh 520 4.4 1.5 DPAK/IPAK STP5NK52ZD SuperFREDmesh 520 4.4 1.5 TO-220 STB8NM60D FDmesh 600 8 1 DPAK STP13NK60Z SuperMESH 600 13 0.55 TO-220 STP14NK60Z SuperMESH 600 13.5 0.5 TO-220 FDmesh II 600 10 0.45 DPAK 600 14 0.

STP12NM50N Data Brief Features Dimensions (L/W/H): 132 mm / 52 mm / 22 mm Universal AC mains range: 90 VAC to 264 VAC High output power: 90 W (4.74 A, 19 VDC) Very low output noise and ripple: less than 300 m VP-P Very low standby power: less than 0.5 W at 264 V Hiccup mode: Auto recovery with SCP Latch mode: OVP acts while VOUT > 29 VDC Efficiency > 88% at universal AC mains range STEVAL-ISC002V1 Description This demonstration board is a 90 W wide-range mains AC-DC adapter which is power factor corrected. Its electrical specifications are suitable for typical high-end portable computer power adapters. The particular benefits of this design are the very low no-load input consumption (<0.5 W) and the very high global efficiency. The architecture is based on a two-stage approach: a front-end PFC pre-regulator based on the L6563 TM PFC controller and a downstream multi-resonant half-bridge converter that makes use of the L6599 resonant controller. June 2008 Rev 1 For further information contact your

STP12NM50N Data Brief Features Dimensions (L/W/H): 132 mm / 52 mm / 22 mm Universal AC mains range: 90 VAC to 264 VAC High output power: 90 W (4.74 A, 19 VDC) Very low output noise and ripple: less than 300 m VP-P Very low standby power: less than 0.5 W at 264 V Hiccup mode: Auto recovery with SCP Latch mode: OVP acts while VOUT > 29 VDC Efficiency > 88% at universal AC mains range STEVAL-ISC002V1 Description This demonstration board is a 90 W wide-range mains AC-DC adapter which is power factor corrected. Its electrical specifications are suitable for typical high-end portable computer power adapters. The particular benefits of this design are the very low no-load input consumption (<0.5 W) and the very high global efficiency. The architecture is based on a two-stage approach: a front-end PFC pre-regulator based on the L6563 TM PFC controller and a downstream multi-resonant half-bridge converter that makes use of the L6599 resonant controller. June 2008 Rev 1 For further information contact your

Power MOSFET Since the MOSFET device has to sustain a minimum blocking voltage value of 500 V (VDSS = Vout + VOUT - ripple + Vout), then the most important parameter for the selection is the RDS(on) for its relation with the power dissipation. The device STP12NM50N with its 500 V BVDSS and the RDS(on) (RDS(on)max = 0.38 at T= 25 C), is the best choice for the application. The losses at turn-on depend on the selected boost diode and on the choice of the RG chosen to reduce the di/dt and therefore the levels of EMI of the converter. As described in AN628 (please refer to 2) a gate resistance of 15 has been selected for turn-on, while a diode is used for a fast turn-off. The maximum "on state" power dissipation evaluated at the minimum input mains voltage is: Equation 1 P ON - MAX = I 2 Qrmsmax 2 R on - max = ( 2.15 ) 0.38 = 1.76 W The switching (on + off) losses can be estimated as: Equation 2 P SW = P crossover + P REC = t cr V out f sw I rms + P REC where, Pcrossover are the switching losses due