STP12NM50FD-STP12NM50FDFP-STW14NM50FD STB12NM50FD - STB12NM50FD-1 N-CHANNEL500V-0.32-12ATO-220/FP/D2PAK/I2PAK/TO-247 FDmesh Power MOSFET (with FAST DIODE) TYPE STP12NM50FD STP12NM50FDFP STB12NM50FD STB12NM50FD-1 STW14NM50FD VDSS R DS(on) 500 500 500 500 500 < < < < < V V V V V 0.4 0.4 0.4 0.4 0.4 ID 12 12 12 12 14 A A A A A Pw 160 W 35 W 160 W 160 W 175 W TYPICAL RDS(on) = 0.32 HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE TESTED LOW INPUT CAPACITANCE AND GATE CHARGE LOW GATE INPUT RESISTANCE TIGHT PROCESS CONTROL AND HIGH MANUFACTURING YIELDS DESCRIPTION The FDmesh associates all advantages of reduced on-resistance and fast switching with an intrinsic fast-recovery body diode. It is therefore strongly recommended for bridge topologies, in particular ZVS phase-shift converters. 3 2 1 3 2 TO-220 1 TO-220FP TO-247 3 I2PAK 1 3 12 D 2PAK INTERNAL SCHEMATIC DIAGRAM APPLICATIONS ZVS PHASE-SHIFT FULL BRIDGE CONVERTERS FOR SMPS AND WELDING EQUIPMENT ORDERING

STP12NM50FD-STP12NM50FDFP-STW14NM50FD STB12NM50FD - STB12NM50FD-1 N-CHANNEL500V-0.32-12ATO-220/FP/D2PAK/I2PAK/TO-247 FDmesh Power MOSFET (with FAST DIODE) TYPE STP12NM50FD STP12NM50FDFP STB12NM50FD STB12NM50FD-1 STW14NM50FD VDSS R DS(on) 500 500 500 500 500 < < < < < V V V V V 0.4 0.4 0.4 0.4 0.4 ID 12 12 12 12 14 A A A A A Pw 160 W 35 W 160 W 160 W 175 W TYPICAL RDS(on) = 0.32 HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE TESTED LOW INPUT CAPACITANCE AND GATE CHARGE LOW GATE INPUT RESISTANCE TIGHT PROCESS CONTROL AND HIGH MANUFACTURING YIELDS DESCRIPTION The FDmesh associates all advantages of reduced on-resistance and fast switching with an intrinsic fast-recovery body diode. It is therefore strongly recommended for bridge topologies, in particular ZVS phase-shift converters. 3 2 1 3 2 TO-220 1 TO-220FP TO-247 3 I2PAK 1 3 12 D 2PAK INTERNAL SCHEMATIC DIAGRAM APPLICATIONS ZVS PHASE-SHIFT FULL BRIDGE CONVERTERS FOR SMPS AND WELDING EQUIPMENT ORDERING

STP12NM50FD/FP - STW14NM50FD N-channel 500V - 0.32 - 12A - TO-220/FP - D2/I2PAK - TO-247 FDmeshTM Power MOSFET (with fast diode) General features Type VDSS RDS(on) ID Pw STB12NM50FD 500V <0.4 12A 160W STB12NM50FD-1 500V <0.4 12A 160W STP12NM50FD 500V <0.4 12A 160W STP12NM50FDFP 500V <0.4 12A 35W STW14NM50FD 500V <0.4 12A 160W 100% avalanche tested High dv/dt and avalanche capabilities Low input capacitance and gate charge Low gate input resistance Tight process control and high manufacturing yields 3 1 3 2 1 TO-220 2 TO-220FP 3 1 DPAK DPAK 3 12 TO-247 IPAK Internal schematic diagram Description The FDmeshTM associates all advantages of reduced on-resistance and fast switching with an intrinsic fast-recovery body diode. It is therefore strongly recommended for bridge topologies, in particular ZVS phase-shift converters. Applications Switching application Order codes Part number Marking Package Packaging STB12NM50FD B12NM50FD DPAK Tape & reel STB12NM50FD-1 B12NM50FD IPAK T

STP12NM50N N-channel 500 V, 0.29 , 11 A MDmeshTM II Power MOSFET TO-220 - DPAK - D2PAK - I2PAK - TO-220FP Features Type VDSS (@Tjmax) RDS(on) max ID 3 STB12NM50N 550 V 0.38 11 A STD12NM50N 550 V 0.38 11 A STI12NM50N 550 V 0.38 11 A STF12NM50N 550 V 0.38 11 A (1) STP12NM50N 550 V 0.38 11 A 1 3 12 2 IPAK TO-220 3 1 DPAK 3 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Application 3 1 1 DPAK Figure 1. 2 TO-220FP Internal schematic diagram Switching applications Description This series of devices is realized with the second generation of MDmeshTM technology. This revolutionary Power MOSFET associates a new vertical structure to the company's strip layout to yield one of the world's lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. Table 1. Device summary Order codes Marking Package Packaging STB12NM50N B12NM50N DPAK Tape and reel STD12NM50N D12NM50N DPAK Tape and reel STI12NM50N I12NM50

STP12NM50N N-channel 500V - 0.29 - 11A - TO-220 /FP- D2PAK - DPAK Second generation MDmeshTM Power MOSFET General features Type VDSS (@Tjmax) RDS(on) ID STB12NM50N 550V <0.38 11A STD12NM50N 550V <0.38 11A STF12NM50N 550V <0.38 11A (1) STP12NM50N 550V <0.38 11A 100% avalanche tested Low input capacitance and gate charge Low gate input resistancel 3 1 3 1 DPAK 2 TO-220 3 3 1 DPAK 2 1 TO-220FP Description This series of devices is realized with the second generation of MDmeshTM Technology. This revolutionary MOSFET associates a new vertical structure to the Company's strip layout to yield one of the world's lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters Internal schematic diagram Applications Switching application Order codes Part number Marking Package Packaging STB12NM50N B12NM50N DPAK Tape & reel STD12NM50N D12NM50N DPAK Tape & reel STF12NM50N F12NM50N TO-220FP Tube STP12NM50N P12NM50N TO-220 Tube April 20

STP12NM50 - STP12NM50FP STB12NM50 - STB12NM50-1 N-CHANNEL 500V - 0.30 - 12A TO-220/FP/D2PAK/I2PAK MDmesh Power MOSFET TYPE STP12NM50/FP STB12NM50 STB12NM50-1 VDSS R DS(on) ID 500V 500V 500V <0.35 <0.35 <0.35 12 A 12 A 12 A TYPICAL RDS(on) = 0.30 HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE TESTED LOW INPUT CAPACITANCE AND GATE CHARGE LOW GATE INPUT RESISTANCE TIGHT PROCESS CONTROL AND HIGH MANUFACTURING YIELDS DESCRIPTION The MDmesh is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company's PowerMESH horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the Company's proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competition's products. 3 2 1 TO-220 TO-220FP 3 1 1 D2PAK 2 3 I2PAK (Tabless TO-220) INTERNAL SCHEMATIC DIAGRAM APPLICATIONS The MDmesh fami

STP12NM50FD-STP12NM50FDFP-STW14NM50FD STB12NM50FD - STB12NM50FD-1 N-CHANNEL500V-0.32-12ATO-220/FP/D2PAK/I2PAK/TO-247 FDmeshTM Power MOSFET (with FAST DIODE) TYPE VDSS RDS(on) STP12NM50FD STP12NM50FDFP STB12NM50FD STB12NM50FD-1 STW14NM50FD 500 V 500 V 500 V 500 V 500 V < < < < < 0.4 0.4 0.4 0.4 0.4 ID 12 12 12 12 14 A A A A A Pw 160 W 35 W 160 W 160 W 175 W TYPICAL RDS(on) = 0.32 HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE TESTED LOW INPUT CAPACITANCE AND GATE CHARGE LOW GATE INPUT RESISTANCE TIGHT PROCESS CONTROL AND HIGH MANUFACTURING YIELDS DESCRIPTION The FDmeshTM associates all advantages of reduced on-resistance and fast switching with an intrinsic fast-recovery body diode. It is therefore strongly recommended for bridge topologies, in particular ZVS phase-shift converters. 3 1 3 2 TO-220 1 2 TO-220FP TO-247 3 I2PAK 1 3 12 D2PAK INTERNAL SCHEMATIC DIAGRAM APPLICATIONS ZVS PHASE-SHIFT FULL BRIDGE CONVERTERS FOR SMPS AND WELDING EQUIPMENT ORDERIN

STP12NM50N N-channel 500V - 0.29 - 11A - TO-220 /FP- D2PAK - DPAK Second generation MDmeshTM Power MOSFET General features Type VDSS (@Tjmax) RDS(on) ID STB12NM50N 550V <0.38 11A STD12NM50N 550V <0.38 11A STF12NM50N 550V <0.38 11A (1) STP12NM50N 550V <0.38 11A 100% avalanche tested Low input capacitance and gate charge Low gate input resistancel 3 1 3 1 DPAK 2 TO-220 3 3 1 DPAK 2 1 TO-220FP Description The STx12NM50N is realized with the second generation of MDmeshTM Technology. This revolutionary MOSFET associates a new vertical structure to the Company's strip layout to yield one of the world's lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters Internal schematic diagram Applications Switching application Order codes Sales Type Marking Package Packaging STB12NM50N B12NM50N DPAK TAPE & REEL STD12NM50N D12NM50N DPAK TAPE & REEL STF12NM50N F12NM50N TO-220FP TUBE STP12NM50N P12NM50N TO-220 TUBE March 2006 Rev 5

STP12NM50 - STP12NM50FP STB12NM50 - STB12NM50-1 N-channel 550V @ tjmax - 0.30 - 12A TO-220/FP/D2/I2PAK MDmeshTM Power MOSFET General features Type VDSS (@Tjmax) RDS(on) ID STB12NM50 550V <0.35 12A STB12NM50-1 550V <0.35 12A STP12NM50 550V <0.35 12A STP12NM50FP 550V <0.35 12A High dv/dt and avalanche capabilities Low input capacitance and gate charge 100% avalanche tested Low gate input resistance Tight process control and high manufacturing yields 3 1 3 2 1 TO-220 TO-220FP 3 3 12 1 DPAK 2 IPAK Internal schematic diagram Description The MDmeshTM is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company's PowerMESHTM horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the Company's proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competition's produ

STP12NM50N N-channel 500 V, 0.29 , 11 A MDmeshTM II Power MOSFET TO-220 - DPAK - D2PAK - I2PAK - TO-220FP Features Type VDSS (@Tjmax) RDS(on) max ID STB12NM50N 550 V 0.38 11 A STD12NM50N 550 V 0.38 11 A STI12NM50N 550 V 0.38 11 A STF12NM50N 550 V 0.38 11 A (1) STP12NM50N 550 V 0.38 11 A 3 12 2 IPAK TO-220 3 DPAK r P e 1 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Application t e l o DPAK ) (s Switching applications u d o 1 3 ) s ( ct 3 1 s b O Figure 1. 3 1 2 TO-220FP Internal schematic diagram t c u Description d o r This series of devices is realized with the second generation of MDmeshTM technology. This revolutionary Power MOSFET associates a new vertical structure to the company's strip layout to yield one of the world's lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. P e t e l o s b O Table 1. Device summary Order codes Marking Package Packaging STB12NM50N B12NM50N DPAK T

STP12NM50 - STP12NM50FP STB12NM50 - STB12NM50-1 N-CHANNEL 550V @ Tjmax-0.30 - 12A TO-220/FP/D/IPAK MDmeshTM Power MOSFET Table 1: General Features Figure 1: Package TYPE VDSS (@Tjmax) RDS(on) ID STB12NM50 STB12NM50-1 STP12NM50 STP12NM50FP 550V 550V 550V 550V < 0.35 < 0.35 < 0.35 < 0.35 12A 12A 12A 12A TYPICAL RDS(on) = 0.30 HIGH dv/dt AND AVALANCHE CAPABILITIES LOW INPUT CAPACITANCE AND GATE CHARGE 100% AVALANCHE TESTED LOW GATE INPUT RESISTANCE TIGHT PROCESS CONTROL AND HIGH MANUFACTURING YIELDS DESCRIPTION The MDmeshTM is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company's PowerMESHTM horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the Company's proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competition's products. 3 3 1 TO-220 2 1 2

STP12NM50N - STF12NM50N STB12NM50N - STD12NM50N N-CHANNEL 500V - 0.33 - 11 A TO-220/FP/D2PAK/DPAK SECOND GENERATION MDmeshTM MOSFET TARGET SPECIFICATION Table 1: General Features Figure 1: Package TYPE VDSS RDS(on) ID STB12NM50N STD12NM50N STF12NM50N STP12NM50N 500 V 500 V 500 V 500 V < 0.38 < 0.38 < 0.38 < 0.38 11 A 11 A 11 A (*) 11 A WORLD'S LOWEST ON RESISTANCE TYPICAL R DS(on) = 0.33 100% AVALANCHE TESTED LOW INPUT CAPACITANCE AND GATE CHARGE LOW GATE INPUT RESISTANCE 3 1 3 1 TO-220 2 D2PAK 3 3 1 1 DESCRIPTION The STP12NM50N is realized with the second generation of MDmesh Technology. This revolutionary MOSFET associates a new vertical structure to the Company's strip layout to yield the world's lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters DPAK 2 TO-220FP Figure 2: Internal Schematic Diagram APPLICATIONS The MDmeshTM II family is very suitable for increasing power density of high voltage converters a

STP12NM50N - STF12NM50N STB12NM50N - STD12NM50N N-CHANNEL 500V - 0.33 - 11 A TO-220/FP/D2PAK/DPAK SECOND GENERATION MDmeshTM MOSFET Table 1: General Features Figure 1: Package TYPE VDSS (@Tjmax) RDS(on) ID STB12NM50N STD12NM50N STF12NM50N STP12NM50N 550 V 550 V 550 V 550 V < 0.38 < 0.38 < 0.38 < 0.38 11 A 11 A 11 A (*) 11 A 100% AVALANCHE TESTED LOW INPUT CAPACITANCE AND GATE CHARGE LOW GATE INPUT RESISTANCE DESCRIPTION The STx12NM50N is realized with the second generation of MDmesh Technology. This revolutionary MOSFET associates a new vertical structure to the Company's strip layout to yield one of the world's lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters 3 1 3 1 TO-220 2 D2PAK 3 3 1 1 DPAK 2 TO-220FP Figure 2: Internal Schematic Diagram APPLICATIONS The MDmeshTM II family is very suitable for increasing power density of high voltage converters allowing system miniaturization and higher efficiencies. Table 2: Order

STP12NM50 - STP12NM50FP STB12NM50 - STB12NM50-1 N-CHANNEL 550V @ Tjmax-0.30 - 12A TO-220/FP/D/IPAK Zener-Protected SuperMESHTMMOSFET Table 1: General Features TYPE STB12NM50 STB12NM50-1 STP12NM50 STP12NM50FP VDSS (@Tjmax) 550 V 550 V 550 V 550 V Figure 1: Package RDS(on) < 0.35 < 0.35 < 0.35 < 0.35 ID 12 A 12 A 12 A 12 A TYPICAL RDS(on) = 0.30 HIGH dv/dt AND AVALANCHE CAPABILITIES LOW INPUT CAPACITANCE AND GATE CHARGE 100% AVALANCHE TESTED LOW GATE INPUT RESISTANCE TIGHT PROCESS CONTROL AND HIGH MANUFACTURING YIELDS DESCRIPTION The MDmeshTM is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company's PowerMESHTM horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the Company's proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competition's products.

STP12NM50N - STF12NM50N STB12NM50N - STD12NM50N N-CHANNEL 500V - 0.33 - 11 A TO-220/FP/D2PAK/DPAK SECOND GENERATION MDmeshTM MOSFET TARGET SPECIFICATION Table 1: General Features Figure 1: Package TYPE VDSS RDS(on) ID STB12NM50N STD12NM50N STF12NM50N STP12NM50N 500 V 500 V 500 V 500 V < 0.38 < 0.38 < 0.38 < 0.38 11 A 11 A 11 A (*) 11 A WORLD'S LOWEST ON RESISTANCE TYPICAL R DS(on) = 0.33 100% AVALANCHE TESTED LOW INPUT CAPACITANCE AND GATE CHARGE LOW GATE INPUT RESISTANCE 3 1 3 1 TO-220 2 D2PAK 3 3 1 1 DESCRIPTION The STP12NM50N is realized with the second generation of MDmesh Technology. This revolutionary MOSFET associates a new vertical structure to the Company's strip layout to yield the world's lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters DPAK 2 TO-220FP Figure 2: Internal Schematic Diagram APPLICATIONS The MDmeshTM II family is very suitable for increasing power density of high voltage converters a