SPA11N80C3 CoolMOSTM Power Transistor Product Summary Features * New revolutionary high voltage technology * Extreme dv/dt rated V DS 800 V R DS(on)max @ Tj = 25C 0.45 64 nC Q g,typ * High peak current capability * Qualified according to JEDEC1) for target applications * Pb-free lead plating; RoHS compliant * Ultra low gate charge * Ultra low effective capacitances * Fully isolated package (2500 VAC; 1 minute) CoolMOSTM 800V designed for: * Industrial application with high DC bulk voltage * Switching Application ( i.e. active clamp forward ) Type Package Marking SPA11N80C3 PG-TO220FP 11N80C3 Maximum ratings, at T j=25 C, unless otherwise specified Parameter Symbol Conditions Continuous drain current ID Value T C=25 C 11 T C=100 C 7.1 Pulsed drain current2) I D,pulse T C=25 C 33 Avalanche energy, single pulse E AS I D=2.2 A, V DD=50 V 470 Avalanche energy, repetitive t AR2),3) E AR I D=11 A, V DD=50 V 0.2 Avalanche current, repetitive t AR2),3) I AR MOSFET dv /dt ruggedness dv /dt Gat

SPA11N80C3 Cool MOSTM Power Transistor Feature * New revolutionary high voltage technology VDS 800 V RDS(on) 0.45 ID 11 A * Ultra low gate charge * Periodic avalanche rated PG-TO220-3-31 PG-TO220 * Extreme dv/dt rated * Ultra low effective capacitances 1 * Improved transconductance 2 3 P-TO220-3-31 * PG-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute) Type Package Ordering Code Marking SPP11N80C3 PG-TO220 Q67040-S4438 11N80C3 SPA11N80C3 PG-TO220-3-31 SP000216320 11N80C3 Maximum Ratings Symbol Parameter Value SPP Continuous drain current Unit SPA ID A TC = 25 C 11 111) TC = 100 C 7.1 7.11) 33 33 Pulsed drain current, tp limited by Tjmax ID puls A Avalanche energy, single pulse EAS 470 470 EAR 0.2 0.2 Avalanche current, repetitive tAR limited by Tjmax IAR 11 11 A Gate source voltage VGS 20 20 V Gate source voltage AC (f >1Hz) VGS 30 30 Power dissipation, TC = 25C Ptot 156 41 Operating and storage temperature Tj , Tstg mJ ID=2.2A, VDD=50V Avalanche energy, repetitive tAR limited

SPA11N80C3 Final data Cool MOSTM Power Transistor Feature * New revolutionary high voltage technology VDS 800 V RDS(on) 0.45 ID 11 A * Ultra low gate charge * Periodic avalanche rated P-TO220-3-31 P-TO220-3-1 * Extreme dv/dt rated * Ultra low effective capacitances 1 * Improved transconductance 2 3 P-TO220-3-31 * P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute) Type Package Ordering Code Marking SPP11N80C3 P-TO220-3-1 Q67040-S4438 11N80C3 SPA11N80C3 P-TO220-3-31 Q67040-S4439 11N80C3 Maximum Ratings Parameter Symbol Value SPP Continuous drain current Unit SPA ID A TC = 25 C 11 111) TC = 100 C 7.1 7.11) 33 33 Pulsed drain current, tp limited by Tjmax ID puls A Avalanche energy, single pulse EAS 470 470 EAR 0.2 0.2 Avalanche current, repetitive tAR limited by Tjmax IAR 11 11 A Gate source voltage VGS 20 20 V Gate source voltage AC (f >1Hz) VGS 30 30 Power dissipation, TC = 25C Ptot 156 41 Operating and storage temperature Tj , Tstg mJ ID=2.2A, VDD=50V Avalanche energy, repetit

SPA11N80C3 Preliminary data Cool MOSTM==Power Transistor COOLMOS Power Semiconductors Feature *=New revolutionary high voltage technology Product Summary * Ultra low gate charge VDS 800 V *=Periodic avalanche rated RDS(on) 0.45 * Extreme dv/dt rated ID 5.9 A P-TO220-3-31 1 2 3 P-TO220-3-31 Type Package Ordering Code SPA11N80C3 P-TO220-3-31 Q67040-S4439 Marking 11N80C3 Maximum Ratings, at TC = 25C, unless otherwise specified Parameter Symbol Continuous drain current ID Value Unit A TC = 25 C 5.9 TC = 100 C 7.1 Pulsed drain current, tp limited by Tjmax ID puls 33 Avalanche energy, single pulse EAS 470 EAR 0.2 Avalanche current, repetitive tAR limited by Tjmax IAR 11 A Reverse diode dv/dt dv/dt 6 V/ns Gate source voltage VGS 20 V Power dissipation, TC = 25C Ptot 41 W Operating and storage temperature Tj , Tstg -55... +150 C mJ ID =2.5A, VDD =50V Avalanche energy, repetitive tAR limited by Tjmax 1) ID =11A, VDD =50V, RG =15 IS =5.9A, VDS <=VDD , di/dt=100A/s, Tjmax=150C Page 1 2001-11-12

SPA11N80C3 Preliminary data Cool MOSTM Power Transistor Feature Product Summary * New revolutionary high voltage technology VDS 800 V RDS(on) 0.45 11 A * Ultra low gate charge * Periodic avalanche rated ID * Extreme dv/dt rated P-TO220-3-31 1 2 P-TO220-3-1 3 P-TO220-3-31 Type Package Ordering Code Marking SPP11N80C3 P-TO220-3-1 Q67040-S4438 11N80C3 SPA11N80C3 P-TO220-3-31 Q67040-S4439 11N80C3 Maximum Ratings Parameter Symbol Value SPP Continuous drain current Unit SPA ID A TC = 25 C 11 111) TC = 100 C 7.1 7.11) 33 33 Pulsed drain current, tp limited by Tjmax ID puls A Avalanche energy, single pulse EAS 470 470 EAR 0.2 0.2 Avalanche current, repetitive tAR limited by Tjmax IAR 11 11 A Reverse diode dv/dt dv/dt 6 6 V/ns Gate source voltage VGS 20 20 Gate source voltage AC (f >1Hz) VGS 30 30 Power dissipation, TC = 25C Ptot 156 41 Operating and storage temperature Tj , Tstg mJ ID =2.2A, VDD =50V Avalanche energy, repetitive tAR limited by Tjmax 2) ID =11A, VDD =50V IS = 11 A, VDS < VDD

SPA11N80C3 CoolMOSTM Power Transistor Product Summary Features * New revolutionary high voltage technology * Extreme dv/dt rated V DS 800 V R DS(on)max @ Tj = 25C 0.45 64 nC Q g,typ * High peak current capability * Qualified according to JEDEC1) for target applications * Pb-free lead plating; RoHS compliant * Ultra low gate charge * Ultra low effective capacitances * Fully isolated package (2500 VAC; 1 minute) CoolMOSTM 800V designed for: * Industrial application with high DC bulk voltage * Switching Application ( i.e. active clamp forward ) Type Package Marking SPA11N80C3 PG-TO220-3 11N80C3 Maximum ratings, at T j=25 C, unless otherwise specified Parameter Symbol Conditions Continuous drain current2) ID Value T C=25 C 11 T C=100 C 7.1 Pulsed drain current3) I D,pulse T C=25 C 33 Avalanche energy, single pulse E AS I D=2.2 A, V DD=50 V 470 Avalanche energy, repetitive t AR3),4) E AR I D=11 A, V DD=50 V 0.2 Avalanche current, repetitive t AR3),4) I AR MOSFET dv /dt ruggedness dv /dt G

SPA11N80C3 CoolMOSTM Power Transistor Product Summary Features * New revolutionary high voltage technology * Extreme dv/dt rated V DS 800 V R DS(on)max @ Tj = 25C 0.45 64 nC Q g,typ * High peak current capability * Qualified according to JEDEC1) for target applications * Pb-free lead plating; RoHS compliant * Ultra low gate charge * Ultra low effective capacitances * Fully isolated package (2500 VAC; 1 minute) CoolMOSTM 800V designed for: * Industrial application with high DC bulk voltage * Switching Application ( i.e. active clamp forward ) Type Package Marking SPA11N80C3 PG-TO220-3 11N80C3 Maximum ratings, at T j=25 C, unless otherwise specified Parameter Symbol Conditions Continuous drain current2) ID Value T C=25 C 11 T C=100 C 7.1 Pulsed drain current3) I D,pulse T C=25 C 33 Avalanche energy, single pulse E AS I D=2.2 A, V DD=50 V 470 Avalanche energy, repetitive t AR3),4) E AR I D=11 A, V DD=50 V 0.2 Avalanche current, repetitive t AR3),4) I AR MOSFET dv /dt ruggedness dv /dt G

SPA11N80C3 Cool MOSTM Power Transistor Feature * New revolutionary high voltage technology VDS 800 V RDS(on) 0.45 ID 11 A * Ultra low gate charge * Periodic avalanche rated PG-TO220-3-31 PG-TO220-3-1 * Extreme dv/dt rated * Ultra low effective capacitances 1 * Improved transconductance 2 3 P-TO220-3-31 * PG-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute) Type Package SPP11N80C3 PG-TO220-3-1 Q67040-S4438 SPA11N80C3 Ordering Code Marking 11N80C3 PG-TO220-3-31 SP000216320 11N80C3 Maximum Ratings Symbol Parameter Value SPP Continuous drain current Unit SPA ID A TC = 25 C 11 111) TC = 100 C 7.1 7.11) 33 33 Pulsed drain current, tp limited by Tjmax ID puls A Avalanche energy, single pulse EAS 470 470 EAR 0.2 0.2 Avalanche current, repetitive tAR limited by Tjmax IAR 11 11 A Gate source voltage VGS 20 20 V Gate source voltage AC (f >1Hz) VGS 30 30 Power dissipation, TC = 25C Ptot 156 41 Operating and storage temperature Tj , Tstg mJ ID=2.2A, VDD=50V Avalanche energy, repetitive tAR

SPA11N80C3 CoolMOSTM Power Transistor Product Summary Features * New revolutionary high voltage technology * Extreme dv/dt rated V DS 800 V R DS(on)max @ Tj = 25C 0.45 64 nC Q g,typ * High peak current capability * Qualified according to JEDEC1) for target applications * Pb-free lead plating; RoHS compliant * Ultra low gate charge * Ultra low effective capacitances * Fully isolated package (2500 VAC; 1 minute) CoolMOSTM 800V designed for: * Industrial application with high DC bulk voltage * Switching Application ( i.e. active clamp forward ) Type Package Marking SPA11N80C3 PG-TO220-3 11N80C3 Maximum ratings, at T j=25 C, unless otherwise specified Parameter Symbol Conditions Continuous drain current2) ID Value T C=25 C 11 T C=100 C 7.1 Pulsed drain current3) I D,pulse T C=25 C 33 Avalanche energy, single pulse E AS I D=2.2 A, V DD=50 V 470 Avalanche energy, repetitive t AR3),4) E AR I D=11 A, V DD=50 V 0.2 Avalanche current, repetitive t AR3),4) I AR MOSFET dv /dt ruggedness dv /dt G

SPA11N80C3 CoolMOSTM Power Transistor Product Summary Features * New revolutionary high voltage technology * Extreme dv/dt rated V DS 800 V R DS(on)max @ Tj = 25C 0.45 64 nC Q g,typ * High peak current capability * Qualified according to JEDEC1) for target applications * Pb-free lead plating; RoHS compliant * Ultra low gate charge * Ultra low effective capacitances * Fully isolated package (2500 VAC; 1 minute) CoolMOSTM 800V designed for: * Industrial application with high DC bulk voltage * Switching Application ( i.e. active clamp forward ) Type Package Marking SPA11N80C3 PG-TO220FP 11N80C3 Maximum ratings, at T j=25 C, unless otherwise specified Parameter Symbol Conditions Continuous drain current ID Value T C=25 C 11 T C=100 C 7.1 Pulsed drain current2) I D,pulse T C=25 C 33 Avalanche energy, single pulse E AS I D=2.2 A, V DD=50 V 470 Avalanche energy, repetitive t AR2),3) E AR I D=11 A, V DD=50 V 0.2 Avalanche current, repetitive t AR2),3) I AR MOSFET dv /dt ruggedness dv /dt Gat

SPA11N80C3 Final data Cool MOSTM Power Transistor Feature * New revolutionary high voltage technology VDS 800 V RDS(on) 0.45 ID 11 A * Ultra low gate charge * Periodic avalanche rated P-TO220-3-31 P-TO220-3-1 * Extreme dv/dt rated * Ultra low effective capacitances 1 * Improved transconductance 2 3 P-TO220-3-31 * P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute) Type Package Ordering Code Marking SPP11N80C3 P-TO220-3-1 Q67040-S4438 11N80C3 SPA11N80C3 P-TO220-3-31 Q67040-S4439 11N80C3 Maximum Ratings Parameter Symbol Value SPP Continuous drain current Unit SPA ID A TC = 25 C 11 111) TC = 100 C 7.1 7.11) 33 33 Pulsed drain current, tp limited by Tjmax ID puls A Avalanche energy, single pulse EAS 470 470 EAR 0.2 0.2 Avalanche current, repetitive tAR limited by Tjmax IAR 11 11 A Reverse diode dv/dt dv/dt 6 6 V/ns Gate source voltage VGS 20 20 Gate source voltage AC (f >1Hz) VGS 30 30 Power dissipation, TC = 25C Ptot 156 41 Operating and storage temperature Tj , Tstg mJ ID =2.2A,

SPA11N80C3 CoolMOSTM Power Transistor Product Summary Features * New revolutionary high voltage technology * Extreme dv/dt rated V DS 800 V R DS(on)max @ Tj = 25C 0.45 64 nC Q g,typ * High peak current capability * Qualified according to JEDEC1) for target applications * Pb-free lead plating; RoHS compliant * Ultra low gate charge * Ultra low effective capacitances * Fully isolated package (2500 VAC; 1 minute) CoolMOSTM 800V designed for: * Industrial application with high DC bulk voltage * Switching Application ( i.e. active clamp forward ) Type Package Marking SPA11N80C3 PG-TO220-3 11N80C3 Maximum ratings, at T j=25 C, unless otherwise specified Parameter Symbol Conditions Continuous drain current2) ID Value T C=25 C 11 T C=100 C 7.1 Pulsed drain current3) I D,pulse T C=25 C 33 Avalanche energy, single pulse E AS I D=2.2 A, V DD=50 V 470 Avalanche energy, repetitive t AR3),4) E AR I D=11 A, V DD=50 V 0.2 Avalanche current, repetitive t AR3),4) I AR MOSFET dv /dt ruggedness dv /dt G

SPA11N80C3 Cool MOSTM Power Transistor Feature * New revolutionary high voltage technology VDS 800 V RDS(on) 0.45 ID 11 A * Ultra low gate charge * Periodic avalanche rated PG-TO220-3-31 PG-TO220-3-1 * Extreme dv/dt rated * Ultra low effective capacitances 1 * Improved transconductance 2 3 P-TO220-3-31 * PG-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute) Type Package Ordering Code SPP11N80C3 PG-TO220-3-1 Q67040-S4438 11N80C3 SPA11N80C3 PG-TO220-3-31 Q67040-S4439 11N80C3 Marking Maximum Ratings Symbol Parameter Value SPP Continuous drain current Unit SPA ID A TC = 25 C 11 111) TC = 100 C 7.1 7.11) 33 33 Pulsed drain current, tp limited by Tjmax ID puls A Avalanche energy, single pulse EAS 470 470 EAR 0.2 0.2 Avalanche current, repetitive tAR limited by Tjmax IAR 11 11 A Gate source voltage VGS 20 20 V Gate source voltage AC (f >1Hz) VGS 30 30 Power dissipation, TC = 25C Ptot 156 41 Operating and storage temperature Tj , Tstg mJ ID=2.2A, VDD=50V Avalanche energy, repetitive tA

SPA11N80C3 CoolMOSTM Power Transistor Product Summary Features * New revolutionary high voltage technology * Extreme dv/dt rated V DS 800 V R DS(on)max @ Tj = 25C 0.45 64 nC Q g,typ * High peak current capability * Qualified according to JEDEC1) for target applications * Pb-free lead plating; RoHS compliant * Ultra low gate charge * Ultra low effective capacitances * Fully isolated package (2500 VAC; 1 minute) CoolMOSTM 800V designed for: * Industrial application with high DC bulk voltage * Switching Application ( i.e. active clamp forward ) Type Package Marking SPA11N80C3 PG-TO220-3 11N80C3 Maximum ratings, at T j=25 C, unless otherwise specified Parameter Symbol Conditions Continuous drain current2) ID Value T C=25 C 11 T C=100 C 7.1 Pulsed drain current3) I D,pulse T C=25 C 33 Avalanche energy, single pulse E AS I D=2.2 A, V DD=50 V 470 Avalanche energy, repetitive t AR3),4) E AR I D=11 A, V DD=50 V 0.2 Avalanche current, repetitive t AR3),4) I AR MOSFET dv /dt ruggedness dv /dt G

e Ordering Code Orderable Part Number Package Data VDS RDS (on) max VGS (th) ID V mT V A N-Channel MOSFETs 800V BSP300 SP001058720 BSP300H6327XTSA1 SOT223 800 20 2.1 ... 4.0 0.19 SPA17N80C3 SP000216353 SPA17N80C3XKSA1 TO-220 FullPAK 800 290 2.1 ... 3.9 17 SPA11N80C3 SP000216320 SPA11N80C3XKSA1 TO-220 FullPAK 800 450 2.1 ... 3.9 11 SPA08N80C3 SP000216310 SPA08N80C3XKSA1 TO-220 FullPAK 800 650 2.1 ... 3.9 8 SPA06N80C3 SP000216302 SPA06N80C3XKSA1 TO-220 FullPAK 800 900 2.1 ... 3.9 6 SPA04N80C3 SP000216300 SPA04N80C3XKSA1 TO-220 FullPAK 800 1300 2.1 ... 3.9 4 SPA02N80C3 SP000216295 SPA02N80C3XKSA1 TO-220 FullPAK 800 2700 2.1 ... 3.9 2 SPB17N80C3 SP000013370 SPB17N80C3ATMA1 DPAK 800 290 2.1 ... 3.9 17 SPD06N80C3 SP000318350 SPD06N80C3BTMA1 DPAK 800 900 2.1 ... 3.9 6 SPD04N80C3 SP000315410 SPD04N80C3BTMA1 DPAK 800 1300 2.1 ... 3.9 4 SPD02N80C3 SP000315409 SPD02N80C3BTMA1 DPAK 800 2700 2.1 ... 3.9 2 SPI08N80C3 SP000683148 SPI08N80C3XKSA1 IPAK 800 650 2.1 ... 3.9 8 SPP17N80C3 SP000683164 SPP