H2 H2 H2 H2 G1 G1 G1 F1 F1 I3 J2 G3 F1 F1 C2 C2 D1 D1 A2 A A A A I4 G1 I2 E3 FT-450 Technical Supplement PA Unit Circuit Diagram FT-450 Technical Supplement PA-1 PA Unit Note PA-2 PA Unit A B C D E F G H I J 1 RD06HHF1-01 (Q 5001) RD16HHF1 (Q 5006, 5007) RD100HHF1-101 (Q 5009, 5010) 2 3 PQ09TZ1U (Q 5401) TA75S01F(SA) (Q 5400) 4 DTC124GUA (K25) (Q 5402) DTC114TE (04) (Q 5403, 5405) 5 PDTC144EE (08) (Q 5404) DTD123TK (Q 5406) (Lot.2-) DTD123TK (Q 5408) (Lot.3-) DTD123YK (F62) (Q 5406, 5408) 6 7 TB6593FNG (Q 5409) DAN202U (N) (D 5018, 5019) 8 Parts Layout (Side A) FT-450 Technical Supplement PA-3 PA Unit a b c d e f g h i j 1 2 3 4 5 6 7 8 Parts Layout (Side B) PA-4 PA Unit Parts List REF C 5012 C 5013 C 5014 C 5015 C 5032 C 5034 C 5035 C 5036 C 5037 C 5038 C 5040 C 5049 C 5050 C 5051 C 5052 C 5053 C 5054 C 5055 C 5056 C 5057 C 5067 C 5069 C 5070 C 5072 C 5079 C 5080 C 5082 C 5083 C 5084 C 5085 C 5086 C 5087 C 5089 C 5090 C 5104 C 5105 C 5106 C 5109 C 5120 C 5121 C 5123 C 5124 C 5125 C 5126 C 5127

1- A A A A A F2 G1 B1 D1 G2 VX-1400 Series Service Manual PA Unit Circuit Diagram VX-1400 Series Service Manual 47 PA Unit Note 48 VX-1400 Series Service Manual PA Unit Parts Layout (Side A) A B C D E F G H I J 1 RD06HHF1-01 (Q5002) RD16HHF1 (Q5007, 5008) RD100HHF1-101 (Q5011, 5012) 2 DTD123YK (F62) (Q 5001, 5003) HA178L09UA (Q5004) 3 4 TA75S01F(SA) (Q5005) UMD5N (Q5006) 5 DTC124GUA (K25) (Q 5009) DTC114TE (04) (Q5010) 6 DAN202U (N) (D5010, 5011) 7 8 VX-1400 Series Service Manual 49 PA Unit Parts Layout (Side B) a b c d e f g h i j 1 2 3 4 5 6 7 8 50 VX-1400 Series Service Manual PA Unit Parts List REF. C 5002 C 5003 C 5004 C 5005 C 5008 C 5010 C 5012 C 5013 C 5015 C 5016 C 5018 C 5019 C 5020 C 5021 C 5022 C 5023 C 5024 C 5025 C 5026 C 5027 C 5028 C 5029 C 5030 C 5031 C 5032 C 5033 C 5034 C 5036 C 5037 C 5039 C 5041 C 5042 C 5043 C 5044 C 5045 C 5046 C 5048 C 5049 C 5050 C 5052 C 5053 C 5055 C 5056 C 5057 C 5058 C 5059 C 5061 C 5063 C 5064 C 5065 C 5066 C 5067 C 5068 C 5069 C 5070 C 5071 C 5072 D

C2 1 +0.05 High Efficiency: 60%typ.on HF Band 3 0.1 -0.01 R1.6+/-0.15 4.5+/-0.7 5.0+/-0.3 6.2+/-0.7 18.5+/-0.3 APPLICATION 3.3+/-0.2 For output stage of high power amplifiers in HF Band mobile radio sets. PIN 1.DRAIN 2.SOURCE 3.GATE UNIT:mm RoHS COMPLIANT RD100HHF1-101 is a RoHS compliant products. RoHS compliance is indicate by the letter "G" after the Lot Marking. ABSOLUTE MAXIMUM RATINGS (Tc=25C UNLESS OTHERWISE NOTED) SYMBOL PARAMETER CONDITIONS RATINGS UNIT VDSS Drain to source voltage Vgs=0V 50 V VGSS Gate to source voltage Vds=0V +/-20 V Pch Channel dissipation Tc=25C 176.5 W Pin Input power Zg=Zl=50 12.5 W ID Drain current - 25 A Tch Channel temperature - 175 C Tstg Storage temperature - -40 to +175 C Rth j-c Thermal resistance 0.85 C/W junction to case Note 1: Above parameters are guaranteed independently. Publication Date : Oct2011 1 < Silicon RF Power MOS FET (Discrete) > RD100HHF1 RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,100W ELECTRICAL CHARACTERISTICS (Tc=25C UNLESS OTH

6+/-0.15 6.2+/-0.7 3.3+/-0.2 18.5+/-0.3 RoHS COMPLIANT is a RoHS compliant products. RoHS compliance is indicate by the letter "G" after the Lot Marking. 0.1 -0.01 4.5+/-0.7 5.0+/-0.3 For output stage of high power amplifiers in HF Band mobile radio sets. RD100HHF1-101 9.6+/-0.3 High power and High Gain: Pout>100W, Gp>11.5dB @Vdd=12.5V,f=30MHz High Efficiency: 60%typ.on HF Band 24.0+/-0.6 FEATURES 10.0+/-0.3 4-C2 1 PIN 1.DRAIN 2.SOURCE 3.GATE UNIT:mm ABSOLUTE MAXIMUM RATINGS (Tc=25C UNLESS OTHERWISE NOTED) SYMBOL VDSS VGSS Pch Pin ID Tch Tstg Rth j-c PARAMETER Drain to source voltage Gate to source voltage Channel dissipation Input power Drain current Channel temperature Storage temperature Thermal resistance CONDITIONS Vgs=0V Vds=0V Tc=25C Zg=Zl=50 junction to case RATINGS 50 +/-20 176.5 12.5 25 175 -40 to +175 0.85 UNIT V V W W A C C C/W Note 1: Above parameters are guaranteed independently. ELECTRICAL CHARACTERISTICS (Tc=25C UNLESS OTHERWISE NOTED) SYMBOL PARAMETER IDSS IGSS VTH Pout D Zerogat

6+/-0.15 6.2+/-0.7 3.3+/-0.2 18.5+/-0.3 RoHS COMPLIANT is a RoHS compliant products. RoHS compliance is indicate by the letter "G" after the Lot Marking. 0.1 -0.01 4.5+/-0.7 5.0+/-0.3 For output stage of high power amplifiers in HF Band mobile radio sets. RD100HHF1-101 9.6+/-0.3 High power and High Gain: Pout>100W, Gp>11.5dB @Vdd=12.5V,f=30MHz High Efficiency: 60%typ.on HF Band 24.0+/-0.6 FEATURES 10.0+/-0.3 4-C2 1 PIN 1.DRAIN 2.SOURCE 3.GATE UNIT:mm ABSOLUTE MAXIMUM RATINGS (Tc=25C UNLESS OTHERWISE NOTED) SYMBOL VDSS VGSS Pch Pin ID Tch Tstg Rth j-c PARAMETER Drain to source voltage Gate to source voltage Channel dissipation Input power Drain current Channel temperature Storage temperature Thermal resistance CONDITIONS Vgs=0V Vds=0V Tc=25C Zg=Zl=50 junction to case RATINGS 50 +/-20 176.5 12.5 25 175 -40 to +175 0.85 UNIT V V W W A C C C/W Note 1: Above parameters are guaranteed independently. ELECTRICAL CHARACTERISTICS (Tc=25C UNLESS OTHERWISE NOTED) SYMBOL PARAMETER IDSS IGSS VTH Pout D Zerogat

>11.5dB @Vdd=12.5V,f=30MHz High Efficiency: 60%typ.on HF Band 24.0+/-0.6 FEATURES 10.0+/-0.3 4-C2 1 +0.05 R1.6+/-0.15 4.5+/-0.7 5.0+/-0.3 For output stage of high power amplifiers in HF Band mobile radio sets. 6.2+/-0.7 3.3+/-0.2 18.5+/-0.3 RoHS COMPLIANT RD100HHF1-101 is a RoHS compliant products. RoHS compliance is indicate by the letter "G" after the Lot Marking. 0.1 -0.01 PIN 1.DRAIN 2.SOURCE 3.GATE UNIT:mm ABSOLUTE MAXIMUM RATINGS (Tc=25C UNLESS OTHERWISE NOTED) SYMBOL VDSS VGSS Pch Pin ID Tch Tstg Rth j-c PARAMETER Drain to source voltage Gate to source voltage Channel dissipation Input power Drain current Channel temperature Storage temperature Thermal resistance CONDITIONS Vgs=0V Vds=0V Tc=25C Zg=Zl=50 junction to case RATINGS 50 +/-20 176.5 12.5 25 175 -40 to +175 0.85 UNIT V V W W A C C C/W Note 1: Above parameters are guaranteed independently. ELECTRICAL CHARACTERISTICS (Tc=25C UNLESS OTHERWISE NOTED) SYMBOL PARAMETER IDSS IGSS VTH Pout D Zerogate voltage drain current Gate to source l