MK10DN512ZVLK10, MK10DN512ZVMB10 Document Number: K10P81M100SF2RM Rev. 5, 8 May 2011 K10 Sub-Family Reference Manual, Rev. 5, 8 May 2011 2 Freescale Semiconductor, Inc. Contents Section Number Title Page Chapter 1 About This Document 1.1 1.2 Overview.......................................................................................................................................................................51 1.1.1 Purpose.........................................................................................................................................................51 1.1.2 Audience......................................................................................................................................................51 Conventions..................................................................................................................................................................51 1.2.1 Numbering systems........................................................
MK10DN512ZVLK10, MK10DN512ZVMB10 Document Number: K10P81M100SF2RM Rev. 6, Nov 2011 K10 Sub-Family Reference Manual, Rev. 6, Nov 2011 2 Freescale Semiconductor, Inc. Contents Section Number Title Page Chapter 1 About This Document 1.1 1.2 Overview.......................................................................................................................................................................51 1.1.1 Purpose.........................................................................................................................................................51 1.1.2 Audience......................................................................................................................................................51 Conventions..................................................................................................................................................................51 1.2.1 Numbering systems............................................................
MK10DN512ZVLK10, MK10DN512ZVMB10 Features * Operating Characteristics - Voltage range: 1.71 to 3.6 V - Flash write voltage range: 1.71 to 3.6 V - Temperature range (ambient): -40 to 105C * Performance - Up to 100 MHz ARM Cortex-M4 core with DSP instructions delivering 1.25 Dhrystone MIPS per MHz * Memories and memory interfaces - Up to 512 KB program flash memory on nonFlexMemory devices - Up to 128 KB RAM - Serial programming interface (EzPort) - FlexBus external bus interface * Clocks - 3 to 32 MHz crystal oscillator - 32 kHz crystal oscillator - Multi-purpose clock generator * System peripherals - Multiple low-power modes to provide power optimization based on application requirements - Memory protection unit with multi-master protection - 16-channel DMA controller, supporting up to 63 request sources - External watchdog monitor - Software watchdog - Low-leakage wakeup unit * Human-machine interface - Low-power hardware touch sensor interface (TSI) - General-purpose input/output * Analog modul
MK10DN512ZVLK10, MK10DN512ZVMB10 Features * Operating Characteristics - Voltage range: 1.71 to 3.6 V - Flash write voltage range: 1.71 to 3.6 V - Temperature range (ambient): -40 to 105C * Performance - Up to 100 MHz ARM Cortex-M4 core with DSP instructions delivering 1.25 Dhrystone MIPS per MHz * Memories and memory interfaces - Up to 512 KB program flash memory on nonFlexMemory devices - Up to 128 KB RAM - Serial programming interface (EzPort) - FlexBus external bus interface * Clocks - 3 to 32 MHz crystal oscillator - 32 kHz crystal oscillator - Multi-purpose clock generator * System peripherals - 10 low-power modes to provide power optimization based on application requirements - Memory protection unit with multi-master protection - 16-channel DMA controller, supporting up to 64 request sources - External watchdog monitor - Software watchdog - Low-leakage wakeup unit * Human-machine interface - Low-power hardware touch sensor interface (TSI) - General-purpose input/output * Analog modules - T
MK10DN512ZVLK10, MK10DN512ZVMB10 Features * Operating Characteristics - Voltage range: 1.71 to 3.6 V - Flash write voltage range: 1.71 to 3.6 V - Temperature range (ambient): -40 to 105C * Performance - Up to 100 MHz ARM Cortex-M4 core with DSP instructions delivering 1.25 Dhrystone MIPS per MHz * Memories and memory interfaces - Up to 512 KB program flash memory on nonFlexMemory devices - Up to 128 KB RAM - Serial programming interface (EzPort) - FlexBus external bus interface * Clocks - 3 to 32 MHz crystal oscillator - 32 kHz crystal oscillator - Multi-purpose clock generator * System peripherals - 10 low-power modes to provide power optimization based on application requirements - Memory protection unit with multi-master protection - 16-channel DMA controller, supporting up to 64 request sources - External watchdog monitor - Software watchdog - Low-leakage wakeup unit * Human-machine interface - Low-power hardware touch sensor interface (TSI) - General-purpose input/output * Analog modules - T
MK10DN512ZVLK10, MK10DN512ZVMB10 Features * Operating Characteristics - Voltage range: 1.71 to 3.6 V - Flash write voltage range: 1.71 to 3.6 V - Temperature range (ambient): -40 to 105C * Performance - Up to 100 MHz ARM Cortex-M4 core with DSP instructions delivering 1.25 Dhrystone MIPS per MHz * Memories and memory interfaces - Up to 512 KB program flash memory on nonFlexMemory devices - Up to 128 KB RAM - Serial programming interface (EzPort) - FlexBus external bus interface * Clocks - 3 to 32 MHz crystal oscillator - 32 kHz crystal oscillator - Multi-purpose clock generator * System peripherals - Multiple low-power modes to provide power optimization based on application requirements - Memory protection unit with multi-master protection - 16-channel DMA controller, supporting up to 63 request sources - External watchdog monitor - Software watchdog - Low-leakage wakeup unit * Human-machine interface - Low-power hardware touch sensor interface (TSI) - General-purpose input/output * Analog modul
MK10DN512ZVLK10, MK10DN512ZVMB10 Features * Operating Characteristics - Voltage range: 1.71 to 3.6 V - Flash write voltage range: 1.71 to 3.6 V - Temperature range (ambient): -40 to 105C * Performance - Up to 100 MHz ARM Cortex-M4 core with DSP instructions delivering 1.25 Dhrystone MIPS per MHz * Memories and memory interfaces - Up to 512 KB program flash memory on nonFlexMemory devices - Up to 128 KB RAM - Serial programming interface (EzPort) - FlexBus external bus interface * Clocks - 3 to 32 MHz crystal oscillator - 32 kHz crystal oscillator - Multi-purpose clock generator * System peripherals - 10 low-power modes to provide power optimization based on application requirements - Memory protection unit with multi-master protection - 16-channel DMA controller, supporting up to 64 request sources - External watchdog monitor - Software watchdog - Low-leakage wakeup unit * Human-machine interface - Low-power hardware touch sensor interface (TSI) - General-purpose input/output * Analog modules - T
MK10DN512ZVLK10, MK10DN512ZVMB10 Features * Operating Characteristics - Voltage range: 1.71 to 3.6 V - Flash write voltage range: 1.71 to 3.6 V - Temperature range (ambient): -40 to 105C * Performance - Up to 100 MHz ARM Cortex-M4 core with DSP instructions delivering 1.25 Dhrystone MIPS per MHz * Memories and memory interfaces - Up to 512 KB program flash memory on nonFlexMemory devices - Up to 128 KB RAM - Serial programming interface (EzPort) - FlexBus external bus interface * Clocks - 3 to 32 MHz crystal oscillator - 32 kHz crystal oscillator - Multi-purpose clock generator * System peripherals - Multiple low-power modes to provide power optimization based on application requirements - Memory protection unit with multi-master protection - 16-channel DMA controller, supporting up to 63 request sources - External watchdog monitor - Software watchdog - Low-leakage wakeup unit * Human-machine interface - Low-power hardware touch sensor interface (TSI) - General-purpose input/output * Analog modul