HTIP125 PNP EPITAXIAL PLANAR TRANSISTOR Description The HTIP125 is designed for medium power linear and switching applications. TO-220 Absolute Maximum Ratings (TA=25C) * Maximum Temperatures Storage Temperature ........................................................................................................................... -55 ~ +150 C Junction Temperature ................................................................................................................... +150 C Maximum * Maximum Power Dissipation Total Power Dissipation (TC=25C) .................................................................................................................... 65 W Total Power Dissipation (TA=25C) ...................................................................................................................... 2 W * Maximum Voltages and Currents BVCBO Collector to Base Voltage...............................................................................................

HTIP125 PNP EPITAXIAL PLANAR TRANSISTOR Description The HTIP125 is designed for medium power linear and switching applications. Absolute Maximum Ratings (Ta=25C) * Maximum Temperatures Storage Temperature ............................................................................................ -55 ~ +150 C Junction Temperature ................................................................................... +150 C Maximum * Maximum Power Dissipation Total Power Dissipation (Tc=25C) .................................................................................... 65 W Total Power Dissipation (Ta=25C) ...................................................................................... 2 W * Maximum Voltages and Currents BVCBO Collector to Base Voltage ..................................................................................... -60 V BVCEO Collector to Emitter Voltage.................................................................................. -60 V BVEBO Emitter