FDS3992 Dual N-Channel PowerTrench(R) MOSFET 100V, 4.5A, 62m Features Applications * rDS(ON) = 54m (Typ.), VGS = 10V, ID = 4.5A * DC/DC converters and Off-Line UPS * Qg(tot) = 11nC (Typ.), VGS = 10V * Distributed Power Architectures and VRMs * Low Miller Charge * Primary Switch for 24V and 48V Systems * Low QRR Body Diode * High Voltage Synchronous Rectifier * Optimized efficiency at high frequencies * Direct Injection / Diesel Injection Systems * UIS Capability (Single Pulse and Repetitive Pulse) * 42V Automotive Load Control * Electronic Valve Train Systems Formerly developmental type 82745 Branding Dash (1) (8) (2) (7) (3) (6) (4) (5) 5 1 2 3 4 SO-8 MOSFET Maximum Ratings TA = 25C unless otherwise noted Symbol VDSS Drain to Source Voltage Parameter Ratings 100 Units V VGS Gate to Source Voltage 20 V Drain Current ID Continuous (TA = 25oC, VGS = 10V, RJA = 50oC/W) 4.5 A Continuous (TA = 100oC, VGS = 10V, RJA = 50oC/W) 2.8 A Pulsed EAS PD TJ, TSTG Figure 4 A Single Pulse Avalanche Energy (Note 1

FDS3992 N-Channel PowerTrench(R) MOSFET 100V, 4.5A, 62m Features Applications * r DS(ON) = 54m (Typ.), VGS = 10V, ID = 4.5A * DC/DC converters and Off-Line UPS * Qg(tot) = 11nC (Typ.), VGS = 10V * Distributed Power Architectures and VRMs * Low Miller Charge * Primary Switch for 24V and 48V Systems * Low QRR Body Diode * High Voltage Synchronous Rectifier * Optimized efficiency at high frequencies * Direct Injection / Diesel Injection Systems * UIS Capability (Single Pulse and Repetitive Pulse) * 42V Automotive Load Control * Electronic Valve Train Systems Formerly developmental type 82745 Branding Dash (1) (8) (2) (7) (3) (6) (4) (5) 5 1 2 3 4 SO-8 MOSFET Maximum Ratings TA = 25C unless otherwise noted Symbol VDSS Drain to Source Voltage Parameter Ratings 100 Units V VGS Gate to Source Voltage 20 V Drain Current ID Continuous (TA = 25oC, VGS = 10V, R JA = 50oC/W) 4.5 A Continuous (TA = 100oC, VGS = 10V, RJA = 50oC/W) 2.8 A Pulsed E AS PD TJ, TSTG Figure 4 A Single Pulse Avalanche Energy (Note 1)

18 R68 FAN7384 1 LIN 2 SD 3 HIN 4 VDD 5 FO 6 CSC 7 Vss +15V BAT41 D16 VB FAN7384 1 LIN 2 SD 3 HIN 4 VDD 5 FO 6 CSC 7 Vss U7 50R R52 33R R78 3.3 F/50V C44 33R R62 33R R54 3.3 F/50V C40 33R R70 2 4 2 4 10K R79 Q3B 10K R71 Q3A 10K R63 Q1B 10K R55 Q1A DC+ DC+ FDS3992 M1 FDS3992 7 8 1 6 5 3 M3 FDS3992 7 8 AGND DC+ FDS3992 M2 FDS3992 SHUNT_1_GND SHUNT_1 SHUNT_2 0R R67 R66 0.1R/2W DC+ M4 FDS3992 FDS3992 AGND 0R R83 R82 0.1R/2W SHUNT_2_GND FDS3992 6 5 3 1 8 7 1 5 6 3 8 7 1 2009-2019 Microchip Technology Inc. 5 6 10K R80 4 Q4B 10K R72 Q4A 10K R64 Q2B 10K R56 2 4 2 Q2A 33R R81 33R R73 C45 3.3 F/50V 33R R65 33R R57 3.3 F/50V C41 U10 50R R69 1 2 SD 3 HIN 4 VDD 5 FO 6 CSC 7 Vss LIN +15V 1 LIN 2 SD 3 HIN 4 VDD 5 FO 6 CSC 7 Vss +15V FAN7384 14 VB 13 HO 12 VS 11 NC 10 NC 9 LO 8 VSL BAT41 D19 U8 50R R53 FAN7384 14 VB 13 HO 12 VS 11 NC 10 NC 9 LO 8 VSL BAT41 D17 R77 PWM2L1 PWM2H1 10K GND R61 GND 10K R75 10K PWM1L2 10K PWM1H2

ges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. FDS3992 Dual N-Channel PowerTrench(R) MOSFET 100V, 4.5A, 62m Features Applications * rDS(ON) = 54m (Typ.), VGS = 10V, ID = 4.5A * DC/DC converters and Off-Line UPS * Qg(tot) = 11nC (Typ.), VGS = 10V * Distributed Power Architectures and VRMs * Low Miller Charge * Primary Switch for 24V and 48V Systems * Low QRR Body Diode * High Voltage Synchronous Rectifier * Optimized efficiency at high frequencies * Direct Injection / Diesel Injection Systems * UIS Capability (Single Pulse and Repetitive Pulse) * 42V Automotive Load Control * Electronic Valve Train Systems Formerly developmental type 82745 Branding Dash (1) (8) (2) (7) (3) (6) (4) (5) 5 1 2 3 4 SO-8 MOSFET Maximum Ratings TA = 25C unless otherwise noted Symbol VDSS Drain to Source Voltage Par

ges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. FDS3992 Dual N-Channel PowerTrench(R) MOSFET 100V, 4.5A, 62m Features Applications * rDS(ON) = 54m (Typ.), VGS = 10V, ID = 4.5A * DC/DC converters and Off-Line UPS * Qg(tot) = 11nC (Typ.), VGS = 10V * Distributed Power Architectures and VRMs * Low Miller Charge * Primary Switch for 24V and 48V Systems * Low QRR Body Diode * High Voltage Synchronous Rectifier * Optimized efficiency at high frequencies * Direct Injection / Diesel Injection Systems * UIS Capability (Single Pulse and Repetitive Pulse) * 42V Automotive Load Control * Electronic Valve Train Systems Formerly developmental type 82745 Branding Dash (1) (8) (2) (7) (3) (6) (4) (5) 5 1 2 3 4 SO-8 MOSFET Maximum Ratings TA = 25C unless otherwise noted Symbol VDSS Drain to Source Voltage Par

ges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. FDS3992 Dual N-Channel PowerTrench(R) MOSFET 100V, 4.5A, 62m Features Applications * rDS(ON) = 54m (Typ.), VGS = 10V, ID = 4.5A * DC/DC converters and Off-Line UPS * Qg(tot) = 11nC (Typ.), VGS = 10V * Distributed Power Architectures and VRMs * Low Miller Charge * Primary Switch for 24V and 48V Systems * Low QRR Body Diode * High Voltage Synchronous Rectifier * Optimized efficiency at high frequencies * Direct Injection / Diesel Injection Systems * UIS Capability (Single Pulse and Repetitive Pulse) * 42V Automotive Load Control * Electronic Valve Train Systems Formerly developmental type 82745 Branding Dash (1) (8) (2) (7) (3) (6) (4) (5) 5 1 2 3 4 SO-8 MOSFET Maximum Ratings TA = 25C unless otherwise noted Symbol VDSS Drain to Source Voltage Par

FDS3992 Dual N-Channel PowerTrench(R) MOSFET 100V, 4.5A, 62m Features Applications * rDS(ON) = 54m (Typ.), VGS = 10V, ID = 4.5A * DC/DC converters and Off-Line UPS * Qg(tot) = 11nC (Typ.), VGS = 10V * Distributed Power Architectures and VRMs * Low Miller Charge * Primary Switch for 24V and 48V Systems * Low QRR Body Diode * High Voltage Synchronous Rectifier * Optimized efficiency at high frequencies * Direct Injection / Diesel Injection Systems * UIS Capability (Single Pulse and Repetitive Pulse) * 42V Automotive Load Control * Electronic Valve Train Systems Formerly developmental type 82745 Branding Dash (1) (8) (2) (7) (3) (6) (4) (5) 5 1 2 3 4 SO-8 MOSFET Maximum Ratings TA = 25C unless otherwise noted Symbol VDSS Drain to Source Voltage Parameter Ratings 100 Units V VGS Gate to Source Voltage 20 V Drain Current ID Continuous (TA = 25oC, VGS = 10V, RJA = 50oC/W) 4.5 A Continuous (TA = 100oC, VGS = 10V, RJA = 50oC/W) 2.8 A Figure 4 A EAS Single Pulse Avalanche Energy (Note 1) 167 mJ PD Total P

FDS3992 Dual N-Channel PowerTrench(R) MOSFET 100V, 4.5A, 62m Features Applications * rDS(ON) = 54m (Typ.), VGS = 10V, ID = 4.5A * DC/DC converters and Off-Line UPS * Qg(tot) = 11nC (Typ.), VGS = 10V * Distributed Power Architectures and VRMs * Low Miller Charge * Primary Switch for 24V and 48V Systems * Low QRR Body Diode * High Voltage Synchronous Rectifier * Optimized efficiency at high frequencies * Direct Injection / Diesel Injection Systems * UIS Capability (Single Pulse and Repetitive Pulse) * 42V Automotive Load Control * Electronic Valve Train Systems Formerly developmental type 82745 Branding Dash (1) (8) (2) (7) (3) (6) (4) (5) 5 1 2 3 4 SO-8 MOSFET Maximum Ratings TA = 25C unless otherwise noted Symbol VDSS Drain to Source Voltage Parameter Ratings 100 Units V VGS Gate to Source Voltage 20 V Drain Current ID Continuous (TA = 25oC, VGS = 10V, RJA = 50oC/W) 4.5 A Continuous (TA = 100oC, VGS = 10V, RJA = 50oC/W) 2.8 A Pulsed EAS PD TJ, TSTG Figure 4 A Single Pulse Avalanche Energy (Note 1

P4 TERMINAL, TURRET KEYSTONE 1503 P5 TERMINAL, TURRET KEYSTONE 1503 P6 TERMINAL, TURRET KEYSTONE 1503 Q1 MOSFET, P-CH, 100V, 134 m, 1212-8 VISHAY SI7113DN Q2 MOSFET, P-CH, 100V, 134 m, 1212-8 VISHAY SI7113DN Q3 MOSFET, DUAL N-CH, 100V, 62m, SO8 FAIRCHILD FDS3992 Q4 MOSFET, P-CH, 100V, 134 m, 1212-8 VISHAY SI7113DN Q5 MOSFET, P-CH, 100V, 134 m, 1212-8 VISHAY SI7113DN Q6 MOSFET, DUAL N-CH, 100V, 62 m, SO8 FAIRCHILD FDS3992 R1 RESISTOR, 150K, 1%, 1/8W, 0805 VISHAY CRCW0805150KF R2 RESISTOR, 150K, 1%, 1/8W, 0805 VISHAY CRCW0805150KF R3 RESISTOR, 150K, 1%, 1/8W, 0805 VISHAY CRCW0805150KF R4 RESISTOR, 150K, 1%, 1/8W, 0805 VISHAY CRCW0805150KF R5 RESISTOR, 150K, 1%, 1/8W, 0805 VISHAY CRCW0805150KF R6 RESISTOR, 150K, 1%, 1/8W, 0805 VISHAY CRCW0805150KF R7 RESISTOR, 150K, 1%, 1/8W, 0805 VISHAY CRCW0805150KF R8 RESISTOR, 150K, 1%, 1/8W, 0805 VISHAY CRCW0805150KF R9 RESISTOR, 31.6, 1%, 1/8W, 0805 VISHAY CRCW080531R6F R10 RESISTOR, 15.0K, 1%, 1/8W, 0805 VISHAY CRCW080515K0F T1 SIGNAL PATH HPOE

the inrush current to just over 1A. RGATE prevents CGATE from slowing down the reverse polarity protection circuits. It also stabilizes the fast pull-down circuits and prevents chatter during fault conditions. Set RGATE to 22k for most applications. 2.5A FDS3992 100V DUAL M1 M2 VIN 24V RSENSE 0.02 RGATE 22k INRUSH CONTROL: ~1A IOUT < 2.5A + -0.15A COUT 100F CGATE 3.3nF VOUT SENSE 50mV + - TURN OFF MOSFETS GATE U2 TURN MOSFETS BACK ON U3 -+ VIN IOUT -+ + U1 - VOUT VIN LTC4368-2 + - 100mV TURN MOSFETS BACK ON AFTER 31 CYCLES SHDN START TIMER 31 CYCLES Forward overcurrent protection prevents large currents from flowing from VIN to VOUT. This threshold current is determined by the external sense resistor (RSENSE) and an internal comparator (Figure 7, U1) with a 50mV threshold: IOC,FWD = 50mV R SENSE For the example of Figure 7, if 2.5A flows to the output across the 20m sense resistor, the external MOSFETs (M1, M2) are immediately (8s) turned off. This disconnects the load from the input supply. Not

the inrush current to just over 1A. RGATE prevents CGATE from slowing down the reverse polarity protection circuits. It also stabilizes the fast pull-down circuits and prevents chatter during fault conditions. Set RGATE to 22k for most applications. 2.5A FDS3992 100V DUAL M1 M2 VIN 24V RSENSE 0.02 RGATE 22k INRUSH CONTROL: ~1A IOUT < 2.5A + -0.15A COUT 100F CGATE 3.3nF VOUT SENSE 50mV + - TURN OFF MOSFETS GATE U2 TURN MOSFETS BACK ON U3 -+ VIN IOUT -+ + U1 - VOUT VIN LTC4368-2 + - 100mV TURN MOSFETS BACK ON AFTER 31 CYCLES SHDN START TIMER 31 CYCLES Forward overcurrent protection prevents large currents from flowing from VIN to VOUT. This threshold current is determined by the external sense resistor (RSENSE) and an internal comparator (Figure 7, U1) with a 50mV threshold: IOC,FWD = 50mV R SENSE For the example of Figure 7, if 2.5A flows to the output across the 20m sense resistor, the external MOSFETs (M1, M2) are immediately (8s) turned off. This disconnects the load from the input supply. Not

ue Led 1 LED Q1 1 Q4 Tolerance Footprint Manufacturer Manufacturer Part Number Substitution Allowed Lead Free KP-2012S GC 0805-D-S EVERLIGHT 17-21SYGC/S530-E2/T R8 Yes Yes MOSFET N-CHANNEL Si7462DP SOPP8 Vishay Siliconix Si7462DP No Yes 1 MOSFET N-CHANNEL FDS3992 SO-8 Fairchild FDS3992 No Yes Qgate 1 Transistor PNP BFT92 SOT23 Philips BFT92 Yes Yes Rbias 1, Rsl 2 Resistor SMD 5.1k 5% 0805-R-S Walsin WR08X512JTL Yes Yes Rbias 2 1 Resistor SMD 20k 1% 0805-R-S Walsin WR08X2002FTL Yes Yes Rbr3, Rbr4, Rosc 3 Resistor SMD 150k 1% 0805-R-S Walsin WR08X1503FTL Yes Yes Rbw, Rsn2 2 Resistor SMD 75 1% 0805-R-S Walsin WR08X750JTL Yes Yes Rclas s 1 Resistor SMD 30.1 1% 0805-R-S Yageo RC0805FR-0730R1L Yes Yes Rcs 1 Resistor SMD 0.1/3W 1% 2512-S Bourns CRA2512-FZ-R100ELF Yes Yes Rdet1 1 Resistor SMD 24.9k 1% 0805-R-S Walsin WR08X2492FTL Yes Yes Rdet2 1 Resistor SMD 845 1% 0805-R-S Yageo RC0805FR-07845RL Yes Yes Rfb1 1 Resistor SMD 15k 1% 0805-R-S Walsin WR08X1502FTL Yes Yes Rfb2 1 Resistor SMD 3.92

P4 TERMINAL, TURRET KEYSTONE 1503 P5 TERMINAL, TURRET KEYSTONE 1503 P6 TERMINAL, TURRET KEYSTONE 1503 Q1 MOSFET, P-CH, 100V, 134 m, 1212-8 VISHAY SI7113DN Q2 MOSFET, P-CH, 100V, 134 m, 1212-8 VISHAY SI7113DN Q3 MOSFET, DUAL N-CH, 100V, 62m, SO8 FAIRCHILD FDS3992 Q4 MOSFET, P-CH, 100V, 134 m, 1212-8 VISHAY SI7113DN Q5 MOSFET, P-CH, 100V, 134 m, 1212-8 VISHAY SI7113DN Q6 MOSFET, DUAL N-CH, 100V, 62 m, SO8 FAIRCHILD FDS3992 R1 RESISTOR, 150K, 1%, 1/8W, 0805 VISHAY CRCW0805150KF R2 RESISTOR, 150K, 1%, 1/8W, 0805 VISHAY CRCW0805150KF R3 RESISTOR, 150K, 1%, 1/8W, 0805 VISHAY CRCW0805150KF R4 RESISTOR, 150K, 1%, 1/8W, 0805 VISHAY CRCW0805150KF R5 RESISTOR, 150K, 1%, 1/8W, 0805 VISHAY CRCW0805150KF R6 RESISTOR, 150K, 1%, 1/8W, 0805 VISHAY CRCW0805150KF R7 RESISTOR, 150K, 1%, 1/8W, 0805 VISHAY CRCW0805150KF R8 RESISTOR, 150K, 1%, 1/8W, 0805 VISHAY CRCW0805150KF R9 RESISTOR, 31.6, 1%, 1/8W, 0805 VISHAY CRCW080531R6F R10 RESISTOR, 15.0K, 1%, 1/8W, 0805 VISHAY CRCW080515K0F T1 SIGNAL PATH HPOE

1X6 FCI 8614-00-36-1-Y0-10 Yes Yes P1 1 Header, 8-Pin Header 8 HDR1X8 FCI 8614-00-36-1-Y0-10 Yes Yes L1 1 Drum Core Choke 10uH/3A 10X12 Prismatic 9404037403 No Yes Q1 1 MOSFET N-CHANNEL Si7462DP SOPP8 Vishay Siliconix Si7462DP No Yes Q4 1 MOSFET N-CHANNEL FDS3992 SO-8 Fairchild FDS3992 No Yes Qgate 1 Transistor PNP BFT92 SOT23 Philips BFT92 Yes Yes U2 1 HIGH ISOLATION VOLTAGE SSOP PHOTOCOUP LER PS2801-1F3-A SSOP4 CEL PS2801-1 No Yes U3 1 Programmable Shunt Voltage Reference TL432BID BZTG4 SOT23 Texas-Instruments TL432BIDBZTG4 No Yes Rcs 1 Resistor SMD 0.1/3W 1% 2512-S Bourns CRA2512-FZ-R100ELF Yes Yes Rgate 1 Resistor SMD 10 1% 0805-R-S Walsin WR08X10R0FTL Yes Yes Rinru sh 1 Resistor SMD 121k 1% 0805-R-S Walsin WR08X1213FTL Yes Yes Rbr3, Rbr4, Rosc 3 Resistor SMD 150k 1% 0805-R-S Walsin WR08X1503FTL Yes Yes Rfb1 1 Resistor SMD 15k 1% 0805-R-S Walsin WR08X1502FTL Yes Yes Rbias 2 1 Resistor SMD 20k 1% 0805-R-S Walsin WR08X2002FTL Yes Yes Rclas s 1 Resistor SMD 30.1 1% 0805-R-S Yageo RC

6 FCI 8614-00-36-1-Y0-10 Yes Yes P1 1 Header, 10-Pin Header 10 HDR1X10 FCI 8614-00-36-1-Y0-10 Yes Yes L1 1 Drum Core Choke 10 mH/3 A 10X12 Prismatic 9404037403 No Yes Q1 1 MOSFET N-Channel FDP39N20 TO-220-AB Fairchild FDP39N20 No Yes Q4 1 MOSFET N-Channel FDS3992 SO-8 Fairchild FDS3992 No Yes Qgate 1 Transistor PNP BFT92 SOT23 Philips BFT92 Yes Yes Designator Qty Description Value U1 1 Power over Ethernet controller NCP1083 Cbias1, Cf1 2 Capacitor SMD 100 nF/50 V Cline, Cpd1 2 Capacitor SMD Csn1 1 Cfb1 Tolerance http://onsemi.com 5 NC NCP1083WIRGEVB Substitution Allowed Pb Free Footprint Manufacturer Manufacturer Part Number PS2801-1-F3-A SSOP4 CEL PS2801-1 No Yes TL432BIDBZTG4 SOT23 Texas-Instruments TL432BIDBZTG4 No Yes 0805-R-S Walsin WR08X10R0FTL Yes Yes 0805-R-S Walsin WR08X1003FTL Yes Yes 1% 0805-R-S Walsin WR08X1002FTL Yes Yes Designator Qty Description Value Tolerance U2 1 High Isolation Voltage SSOP Photocoupler U3 1 Programmable Shunt Voltage Reference Rgate 1 Resistor SMD