VGS = 10V Polarity Product Number TO-263 (D2PAK) N/P-Channel Complementary Pair MOSFETs (Trench) Product Number (20V to 60V) Polarity BVDSS Min. (V) Configuration RDS(ON) Max. () @ VGS = RJC 10V 4.5V Qg Typ. (nC) @ VGS = ID (A) PD (W) (C/W) Package (Fig.) FDG6332C_F085 NP 20 Comp - 0.3/0.42 1.1/1.4 @ VGS = 4.5V 0.7/-0.6 0.3 415 SC70 (1) FDS8958A_F085 NP 30 Comp 0.028/0.052 0.04/.08 16 @ VGS = 10V 7/-5 2 40 SO-8 (2) FDD8424H_F085A NP 40 Comp 0.024/0.054 0.03/0.07 14/17 @ VGS = 10V 26/-20 30/35 4.1/3.5 TO-252 (DPAK-4L) (3) FDS4559_F085 NP 60 Comp 0.042/0.082 0.055/0.105 12/15 @ VGS = 10V 4.5/-3.5 2 40 SO-8 (2) D1 1 6 2 5 3 4 5 Q2 4 6 7 3 Q1 G1 G2 2 8 Fig 1. Dual N/P SC70 D2 S1 1 S2 N-Channel Fig 2. Dual N/P SO8 P-Channel Fig 3. Dual N/P TO 252/4L IGBTs Product Number FGD3N60LSD 10 f a i rc hi l d s e mi.c o m VCE(sat) Max. (V) BVDSS Min. (V) IC @ 25C (A) Max. (V) Test Condition @ 25C 600 19 1.5 3A, 10V RJC t f @ 25C Typ. (ns) Built-in Diode PD (W) (C/W) 800 Yes 40 3.1 Package TO-252 (DPAK) ignition

VGS = 10V Polarity Product Number TO-263 (D2PAK) N/P-Channel Complementary Pair MOSFETs (Trench) Product Number (20V to 60V) Polarity BVDSS Min. (V) Configuration RDS(ON) Max. () @ VGS = RJC 10V 4.5V Qg Typ. (nC) @ VGS = ID (A) PD (W) (C/W) Package (Fig.) FDG6332C_F085 NP 20 Comp - 0.3/0.42 1.1/1.4 @ VGS = 4.5V 0.7/-0.6 0.3 415 SC70 (1) FDS8958A_F085 NP 30 Comp 0.028/0.052 0.04/.08 16 @ VGS = 10V 7/-5 2 40 SO-8 (2) FDD8424H_F085A NP 40 Comp 0.024/0.054 0.03/0.07 14/17 @ VGS = 10V 26/-20 30/35 4.1/3.5 TO-252 (DPAK-4L) (3) FDS4559_F085 NP 60 Comp 0.042/0.082 0.055/0.105 12/15 @ VGS = 10V 4.5/-3.5 2 40 SO-8 (2) D1 1 6 2 5 3 4 5 Q2 4 6 7 3 Q1 G1 G2 2 8 Fig 1. Dual N/P SC70 D2 S1 1 S2 N-Channel Fig 2. Dual N/P SO8 P-Channel Fig 3. Dual N/P TO 252/4L IGBTs Product Number FGD3N60LSD 10 f a i rc hi l d s e mi.c o m VCE(sat) Max. (V) BVDSS Min. (V) IC @ 25C (A) Max. (V) Test Condition @ 25C 600 19 1.5 3A, 10V RJC t f @ 25C Typ. (ns) Built-in Diode PD (W) (C/W) 800 Yes 40 3.1 Package TO-252 (DPAK) ignition

w.fairchildse mi . c o m / a u t o m o t i v e 4 DISCRETE POWER PRODUCTS N- CHANNEL MOSFETs N-Channel MOSFETs ( AEC-Q101 qualified ) Product Number Polarity BVDSS Min. (V) Config. 10V 4.5V Qg Typ. (nC) @VGS=5V RDS(ON) Max. () @ VGS = ID (A) PD (W) Package FDG6332C_F085 N/P 20 Dual N/P - 0.3/0.42 1.1/0.3 2 0.3 SC70-6 FDG6301N_F085 N/N 25 Dual N - 4 0.29 0.22 0.3 SC70-6 FDB8832_F085 N 30 Single 0.0019 .0022|.0021@5V 100 80 300 TO-263 (D2PAK) FDB8860_F085 N 30 Single 0.0023 .0027|.0026@5V 165 80 306 TO-263 (D2PAK) FDB8870_F085 N 30 Single 0.0039 0.0044 48 160 160 TO-263 (D2PAK) FDD8870_F085 N 30 Single 0.0039 0.0044 48 160 160 TO-252 (DPAK) FDP8870_F085 N 30 Single 0.0039 0.0044 48 160 160 TO-220 FDB8896_F085 N 30 Single 0.0057 0.0068 25 92 80 TO-263 (D2PAK) FDP8896_F085 N 30 Single 0.0057 0.0068 25 92 80 TO-220 FDD8896_F085 N 30 Single 0.0059 0.007 25 35 80 TO-252 (DPAK) FDB8441_F085 N 40 Single 0.0025 - 125 80 300 TO-263 (D2PAK) FDD8444_F085 N 40 Single 0.0027 - 215 80 300 TO-262 (I2PAK) FDP8441_F

ges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. FDG6332C_F085 20V N & P-Channel PowerTrench MOSFETs General Description Features * Q1 0.7 A, 20V. The N & P-Channel MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. RDS(ON) = 300 m @ VGS = 4.5 V RDS(ON) = 400 m @ VGS = 2.5 V * Q2 -0.6 A, -20V. RDS(ON) = 420 m @ VGS = -4.5 V RDS(ON) = 630 m @ VGS = -2.5 V These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive TSSOP-8 and SSOP-6 packages are impractical. * Low gate charge * High performance trench technology for extremely Applications low RDS(ON) * DC/DC convert

FDG6332C_F085 20V N & P-Channel PowerTrench MOSFETs General Description Features * Q1 0.7 A, 20V. The N & P-Channel MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. RDS(ON) = 300 m @ VGS = 4.5 V RDS(ON) = 400 m @ VGS = 2.5 V * Q2 -0.6 A, -20V. RDS(ON) = 420 m @ VGS = -4.5 V RDS(ON) = 630 m @ VGS = -2.5 V These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive TSSOP-8 and SSOP-6 packages are impractical. * Low gate charge * High performance trench technology for extremely Applications low RDS(ON) * DC/DC converter * SC70-6 package: small footprint (51% smaller than * Load switch SSOT-6); low profile (1mm thick) * LCD display inverter * Qualified to AEC Q101 * RoHS Compliant S G D D 1 6 2 5 3 4 G Pin 1 S SC70-6 Absolute Maximum Ratings Symbol Complementary o TA=25

FDG6332C_F085 20V N & P-Channel PowerTrench MOSFETs General Description Features * Q1 0.7 A, 20V. The N & P-Channel MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. RDS(ON) = 300 m @ VGS = 4.5 V RDS(ON) = 400 m @ VGS = 2.5 V * Q2 -0.6 A, -20V. RDS(ON) = 420 m @ VGS = -4.5 V RDS(ON) = 630 m @ VGS = -2.5 V These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive TSSOP-8 and SSOP-6 packages are impractical. * Low gate charge * High performance trench technology for extremely Applications low RDS(ON) * DC/DC converter * SC70-6 package: small footprint (51% smaller than * Load switch SSOT-6); low profile (1mm thick) * LCD display inverter * Qualified to AEC Q101 * RoHS Compliant S G D D 1 6 2 5 3 4 G Pin 1 S SC70-6 Absolute Maximum Ratings Symbol Complementary o TA=25

Discontinued Product(s) 4296_ST42091 5092_F50188E 5FS1_NB5F009 73282 74ABT646CMSA 74ABT646CMSAX 74ABT646CMTC 74ABT646CSC 74AC251SJ 74AC299SJX 74AC74CW 74ACT151SJ 74ACT16646SSC 74ACTQ08SJX Replacement Product(s) NONE NONE FDS3580 None 74ABT646ADB 74ABT646ADB 74ABT646APW 74ABT646AD TC74AC251F TC74AC299F NONE HD74ACT151FP 74ACTQ16646SSC 74VHCT08ASJX Manufacturer of Replacement Product(s) N/A N/A Fairchild Semiconductor N/A NXP NXP NXP NXP Toshiba Toshiba N/A Hitachi Fairchild Semiconductor Fairchild Semiconductor TI PN Not available Not available Not available Not available SN74ABT646DBR SN74ABT646DBR SN74ABT646PW SN74ABT646DW Not available Not available Not available Not available 74ACT16646DL Not available 74ACTQ74SC 74ACT74SC Fairchild Semiconductor CD74ACT74M 74ACTQ74SCX 74ACTQ74SJ 74ACTQ74SJX 74ACTQ821SC 74ACTQ821SCX 74ACT74SCX 74ACT74SJ 74ACT74SJX 74ACT821SC 74ACT821SCX Fairchild Semiconductor Fairchild Semiconductor Fairchild Semiconductor Fairchild Semiconductor Fairchild Semiconductor CD74ACT74M96 Not a

R E L I A B L E . L O G I C . I N N O V A T I O N . TM Logic Cross-Reference Logic Cross-Reference (c) 2003 Texas Instruments Printed in the U.S.A. by Texoma Business Forms, Durant, Oklahoma Printed on recycled paper. SCYB017A NEW First Revision Logic Cross-Reference First Revision Introduction This Logic Cross-Reference for Buyers, Distribution Specialists and others with an interest in Logic will assist in finding a device made by Texas Instruments that is identical or similar to many of our competitors' Logic products. The Logic Cross-Reference is divided into several sections. The first sections list our major competitors and their orderable devices with the equivalent or similar TI orderable device. Sorting is by the function or `root' of the device then by technology (i.e. AC, ACT, ALS, etc.). Pin counts and comments follow the TI orderable device. The second section lists TI orderables and our competitors' orderables sorted alphanumerically with the competitor's device following the TI device. Designer