FDG6332C 20V N & P-Channel PowerTrench MOSFETs General Description Features The N & P-Channel MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. * Q1 0.7 A, 20V. RDS(ON) = 300 m @ VGS = 4.5 V RDS(ON) = 400 m @ VGS = 2.5 V * Q2 -0.6 A, -20V. RDS(ON) = 420 m @ VGS = -4.5 V RDS(ON) = 630 m @ VGS = -2.5 V These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive TSSOP-8 and SSOP-6 packages are impractical. * Low gate charge * High performance trench technology for extremely low RDS(ON) Applications * SC70-60 package: small footprint (51% smaller than * DC/DC converter * Load switch * LCD display inverter SSOT-6); low profile (1mm thick) S G D D 1 6 2 5 3 4 G Pin 1 S SC70-6 Complementary Absolute Maximum Ratings Symbol o TA=25 C unless otherwise noted Q1 Q2 Units VDSS Dr

T III NOT TO REVEAL OR PUBLISH IN WHOLE OR PART SIZE APPLE COMPUTER INC. DRAWING NUMBER SCALE SHT NONE 8 7 6 5 4 3 2 REV. 051-7023 D 40 1 OF B 86 A 8 6 7 2 3 4 5 1 D D Yukon Power Control Allows powering Yukon down during battery sleep to save power Q4300 FDG6332C_NL SC70-6 P-CHN PP3V3_S3 62 59 58 56 51 45 37 32 27 5 80 66 64 63 PP3V3_S3AC D S 4 5 39 66 3 G 5 PPVIN_S3_P2V5S3_SVIN 1 R4305 100K 100K 5% 1/16W MF-LF 2 402 5% 1/16W MF-LF 2 402 PM_SLP_S3BATT_L P2V5S3_EN_L 62 41 P2V5S3_EN_L MAKE_BASE=TRUE 3 Q4304 D 2N7002DW-X-F 5 G 2 4 68 66 64 63 61 60 54 47 43 5 78 70 C 2N7002DW-X-F SOT-363 S 41 62 6 Q4304 D C 62 1 R4304 G SOT-363 S 1 PPBUS_G3H P1V2S3_RUNSS 5 62 1.2V enable has pull-up to 3.3V 1 R4302 470K 3 5% 1/16W MF-LF 2 402 2N7002 PM_SLP_S3BATT 5 Q4302 D 1 G SOT23-LF S 2 6 D PM_SLP_S4_L ENETPWR_S3AC N-CHN 65 63 50 47 46 23 5 2 G FWPWR_EN_L 1 0 2 FDG6332C_NL SC70-6 1 R4300 43 Q4300 S FWPWR_EN_L_OR_GND ENETPWR_S3 5% 1/16W MF-LF 402 1 R4301 0 5% 1/16W MF-LF 2 402 B B When ENETPWR_S3AC B

FDG6332C 20V N & P-Channel PowerTrench MOSFETs General Description Features The N & P-Channel MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. * Q1 0.7 A, 20V. RDS(ON) = 300 m @ VGS = 4.5 V RDS(ON) = 400 m @ VGS = 2.5 V * Q2 -0.6 A, -20V. RDS(ON) = 420 m @ VGS = -4.5 V RDS(ON) = 630 m @ VGS = -2.5 V These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive TSSOP-8 and SSOP-6 packages are impractical. * Low gate charge * High performance trench technology for extremely low RDS(ON) Applications * SC70-6 package: small footprint (51% smaller than * DC/DC converter * Load switch * LCD display inverter SSOT-6); low profile (1mm thick) S G D D 1 6 2 5 3 4 G Pin 1 S SC70-6 Complementary Absolute Maximum Ratings Symbol o TA=25 C unless otherwise noted Q1 Q2 VDSS Drain-Sou

FDG6332C 20V N & P-Channel PowerTrench MOSFETs General Description Features The N & P-Channel MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. * Q1 0.7 A, 20V. RDS(ON) = 300 m @ VGS = 4.5 V RDS(ON) = 400 m @ VGS = 2.5 V * Q2 -0.6 A, -20V. RDS(ON) = 420 m @ VGS = -4.5 V RDS(ON) = 630 m @ VGS = -2.5 V These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive TSSOP-8 and SSOP-6 packages are impractical. * Low gate charge * High performance trench technology for extremely low RDS(ON) Applications * SC70-6 package: small footprint (51% smaller than * DC/DC converter * Load switch * LCD display inverter SSOT-6); low profile (1mm thick) S G D D 1 6 2 5 3 4 G Pin 1 S SC70-6 Complementary Absolute Maximum Ratings Symbol o TA=25 C unless otherwise noted Q1 Q2 VDSS Drain-Sou

ges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. FDG6332C_F085 20V N & P-Channel PowerTrench MOSFETs General Description Features * Q1 0.7 A, 20V. The N & P-Channel MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. RDS(ON) = 300 m @ VGS = 4.5 V RDS(ON) = 400 m @ VGS = 2.5 V * Q2 -0.6 A, -20V. RDS(ON) = 420 m @ VGS = -4.5 V RDS(ON) = 630 m @ VGS = -2.5 V These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive TSSOP-8 and SSOP-6 packages are impractical. * Low gate charge * High performance trench technology for extremely Applications low RDS(ON) * DC/DC convert

FDG6332C 20V N & P-Channel PowerTrench MOSFETs General Description Features The N & P-Channel MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. * Q1 0.7 A, 20V. RDS(ON) = 300 m @ VGS = 4.5 V RDS(ON) = 400 m @ VGS = 2.5 V * Q2 -0.6 A, -20V. RDS(ON) = 420 m @ VGS = -4.5 V RDS(ON) = 630 m @ VGS = -2.5 V These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive TSSOP-8 and SSOP-6 packages are impractical. * Low gate charge * High performance trench technology for extremely low RDS(ON) Applications * SC70-6 package: small footprint (51% smaller than * DC/DC converter * Load switch * LCD display inverter SSOT-6); low profile (1mm thick) S G D D 1 6 2 5 3 4 G Pin 1 S SC70-6 Complementary Absolute Maximum Ratings Symbol o TA=25 C unless otherwise noted Q1 Q2 Units VDSS Dra

FDG6332C_F085 20V N & P-Channel PowerTrench MOSFETs General Description Features * Q1 0.7 A, 20V. The N & P-Channel MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. RDS(ON) = 300 m @ VGS = 4.5 V RDS(ON) = 400 m @ VGS = 2.5 V * Q2 -0.6 A, -20V. RDS(ON) = 420 m @ VGS = -4.5 V RDS(ON) = 630 m @ VGS = -2.5 V These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive TSSOP-8 and SSOP-6 packages are impractical. * Low gate charge * High performance trench technology for extremely Applications low RDS(ON) * DC/DC converter * SC70-6 package: small footprint (51% smaller than * Load switch SSOT-6); low profile (1mm thick) * LCD display inverter * Qualified to AEC Q101 * RoHS Compliant S G D D 1 6 2 5 3 4 G Pin 1 S SC70-6 Absolute Maximum Ratings Symbol Complementary o TA=25

FDG6332C_F085 20V N & P-Channel PowerTrench MOSFETs General Description Features * Q1 0.7 A, 20V. The N & P-Channel MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. RDS(ON) = 300 m @ VGS = 4.5 V RDS(ON) = 400 m @ VGS = 2.5 V * Q2 -0.6 A, -20V. RDS(ON) = 420 m @ VGS = -4.5 V RDS(ON) = 630 m @ VGS = -2.5 V These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive TSSOP-8 and SSOP-6 packages are impractical. * Low gate charge * High performance trench technology for extremely Applications low RDS(ON) * DC/DC converter * SC70-6 package: small footprint (51% smaller than * Load switch SSOT-6); low profile (1mm thick) * LCD display inverter * Qualified to AEC Q101 * RoHS Compliant S G D D 1 6 2 5 3 4 G Pin 1 S SC70-6 Absolute Maximum Ratings Symbol Complementary o TA=25

I NOT TO REVEAL OR PUBLISH IN WHOLE OR PART SIZE APPLE COMPUTER INC. DRAWING NUMBER D SCALE SHT NONE 8 7 6 5 4 3 2 REV. 051-7150 A.0.0 OF 40 1 84 A 8 6 7 2 3 4 5 1 D D Yukon Power Control Allows powering Yukon down during battery sleep to save power Q4300 FDG6332C_NL SC70-6 65C3 P-CHN =PP3V3_S3_P3V3S3AC 4 =PP3V3_S3AC_FET D S 65D3 3 G 5 PPVIN_S3_P2V5S3_SVIN 1 61D6 R4304 100K 2 5% 1/16W MF-LF 402 =P2V5S3_EN 61D8 PM_SLP_S3BATT_L MAKE_BASE=TRUE 3 D C Q4304 C 2N7002 1 G SOT23-LF S 2 65C1 =PPBUS_G3H_S3AC 1 P1V2S3_RUNSS R4302 2 5D7 61B7 1.2V enable has pull-up to 3.3V 470K 3 5% 1/16W MF-LF 402 D Q4302 2N7002 PM_SLP_S3BATT 1 G SOT23-LF S 2 6 D PM_SLP_S4_L 2 G 1 0 2 FDG6332C_NL SC70-6 1 R4300 FWPWR_EN_L Q4300 S ENETPWR_S3AC 43C7 N-CHN 64B8 49C5 23C3 FWPWR_EN_L_OR_GND ENETPWR_S3 5% 1/16W MF-LF 402 1 R4301 0 B 2 5% 1/16W MF-LF 402 B When ENETPWR_S3AC BOMOPTION is active: State PM_SLP_S4_L PM_SLP_S3BATT PM_SLP_S3BATT_L S0 AC 0V 3.3V 0V (3.3V ON) 3.3V 3.3V (2.5V ON) 3.3V (1.2V ON) S0 Batt 0V 3.3V

FDG6332C 20V N & P-Channel PowerTrench MOSFETs General Description Features The N & P-Channel MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. * Q1 0.7 A, 20V. RDS(ON) = 300 m @ VGS = 4.5 V RDS(ON) = 400 m @ VGS = 2.5 V * Q2 -0.6 A, -20V. RDS(ON) = 420 m @ VGS = -4.5 V RDS(ON) = 630 m @ VGS = -2.5 V These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive TSSOP-8 and SSOP-6 packages are impractical. * Low gate charge * High performance trench technology for extremely low RDS(ON) Applications * SC70-6 package: small footprint (51% smaller than * DC/DC converter * Load switch * LCD display inverter SSOT-6); low profile (1mm thick) S G D D 1 6 2 5 3 4 G Pin 1 S SC70-6 Complementary Absolute Maximum Ratings Symbol o TA=25 C unless otherwise noted Q1 Q2 VDSS Drain-Sou

ges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. FDG6332C 20V N & P-Channel PowerTrench MOSFETs General Description Features The N & P-Channel MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. * Q1 0.7 A, 20V. RDS(ON) = 300 m @ VGS = 4.5 V RDS(ON) = 400 m @ VGS = 2.5 V * Q2 -0.6 A, -20V. RDS(ON) = 420 m @ VGS = -4.5 V RDS(ON) = 630 m @ VGS = -2.5 V These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive TSSOP-8 and SSOP-6 packages are impractical. * Low gate charge * High performance trench technology for extremely low RDS(ON) Applications * SC70-6 package: sm

FDG6332C 20V N & P-Channel PowerTrench MOSFETs General Description Features The N & P-Channel MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. * Q1 0.7 A, 20V. RDS(ON) = 300 m @ VGS = 4.5 V RDS(ON) = 400 m @ VGS = 2.5 V * Q2 -0.6 A, -20V. RDS(ON) = 420 m @ VGS = -4.5 V RDS(ON) = 630 m @ VGS = -2.5 V These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive TSSOP-8 and SSOP-6 packages are impractical. * Low gate charge * High performance trench technology for extremely low RDS(ON) Applications * SC70-6 package: small footprint (51% smaller than * DC/DC converter * Load switch * LCD display inverter SSOT-6); low profile (1mm thick) S G D D 1 6 2 5 3 4 G Pin 1 S SC70-6 Complementary Absolute Maximum Ratings Symbol o TA=25 C unless otherwise noted Q1 Q2 VDSS Drain-Sou

III NOT TO REVEAL OR PUBLISH IN WHOLE OR PART SIZE APPLE COMPUTER INC. DRAWING NUMBER SCALE SHT NONE 8 7 6 5 4 3 2 REV. 051-7023 D 40 1 OF 06 86 A 8 6 7 2 3 4 5 1 D D Yukon Power Control Allows powering Yukon down during battery sleep to save power Q4300 FDG6332C_NL SC70-6 P-CHN PP3V3_S3 62 59 58 56 51 45 37 32 27 5 80 66 64 63 PP3V3_S3AC D S 4 5 39 66 3 G 5 PPVIN_S3_P2V5S3_SVIN 1 R4305 100K 100K 5% 1/16W MF-LF 2 402 5% 1/16W MF-LF 2 402 PM_SLP_S3BATT_L P2V5S3_EN_L 62 41 P2V5S3_EN_L MAKE_BASE=TRUE 3 Q4304 D 2N7002DW-X-F 5 G 2 4 66 64 63 61 60 54 47 43 5 4 78 70 68 C 2N7002DW-X-F SOT-363 S 41 62 6 Q4304 D C 62 1 R4304 G SOT-363 S 1 PPBUS_G3H P1V2S3_RUNSS 5 62 1.2V enable has pull-up to 3.3V 1 R4302 470K 3 5% 1/16W MF-LF 2 402 2N7002 PM_SLP_S3BATT 5 Q4302 D 1 G SOT23-LF S 2 6 D PM_SLP_S4_L ENETPWR_S3AC N-CHN 65 63 50 47 46 23 5 2 G FWPWR_EN_L 1 0 2 FDG6332C_NL SC70-6 1 R4300 43 Q4300 S FWPWR_EN_L_OR_GND ENETPWR_S3 5% 1/16W MF-LF 402 1 R4301 0 5% 1/16W MF-LF 2 402 B B When ENETPWR_S3AC

III NOT TO REVEAL OR PUBLISH IN WHOLE OR PART SIZE APPLE COMPUTER INC. DRAWING NUMBER SCALE SHT NONE 8 7 6 5 4 3 2 REV. 051-7099 D 42 1 OF D 104 A 8 6 7 2 3 4 5 1 D D Yukon Power Control Allows powering Yukon down during battery sleep to save power Q4300 FDG6332C_NL SC70-6 P-CHN =PP3V3_S3_P3V3S3AC 63 4 =PP3V3_S3AC_FET D S 63 3 G 5 PPVIN_S3_P2V5S3_SVIN 1 R4305 100K 100K 5% 1/16W MF-LF 2 402 5% 1/16W MF-LF 2 402 PM_SLP_S3BATT_L P2V5S3_EN_L =P2V5S3_EN_L MAKE_BASE=TRUE 3 59 6 Q4304 Q4304 D M C D C 59 1 R4304 2N7002DW-X-F 5 G 2 4 63 C 2N7002DW-X-F SOT-363 S G SOT-363 S 1 =PPBUS_G3H_S3AC P1V2S3_RUNSS 5 59 1.2V enable has pull-up to 3.3V 1 R4302 470K 3 5% 1/16W MF-LF 2 402 Q4302 D 2N7002 PM_SLP_S3BATT 1 G SOT23-LF S 2 6 D PM_SLP_S4_L ENETPWR_S3AC N-CHN 62 47 23 2 G FWPWR_EN_L 1 0 2 FDG6332C_NL SC70-6 1 R4300 41 Q4300 S FWPWR_EN_L_OR_GND ENETPWR_S3 5% 1/16W MF-LF 402 1 R4301 N 0 5% 1/16W MF-LF 2 402 B B When ENETPWR_S3AC BOMOPTION is active: State FWPWR_EN_L S0 AC 0V 3.3V 0V (3.3V ON) 3.3V

III NOT TO REVEAL OR PUBLISH IN WHOLE OR PART SIZE APPLE COMPUTER INC. DRAWING NUMBER SCALE SHT NONE 8 7 6 5 4 3 2 REV. 051-7099 D 42 1 OF D 104 A 8 6 7 2 3 4 5 1 D D Yukon Power Control Allows powering Yukon down during battery sleep to save power Q4300 FDG6332C_NL SC70-6 P-CHN =PP3V3_S3_P3V3S3AC 63 =PP3V3_S3AC_FET D S 4 63 3 G 5 PPVIN_S3_P2V5S3_SVIN 1 R4305 100K 100K 5% 1/16W MF-LF 2 402 5% 1/16W MF-LF 2 402 PM_SLP_S3BATT_L P2V5S3_EN_L =P2V5S3_EN_L MAKE_BASE=TRUE 3 Q4304 D 2N7002DW-X-F 5 G 2 4 63 C 2N7002DW-X-F SOT-363 S 59 6 Q4304 D C 59 1 R4304 G SOT-363 S 1 =PPBUS_G3H_S3AC P1V2S3_RUNSS 5 59 1.2V enable has pull-up to 3.3V 1 R4302 470K 3 5% 1/16W MF-LF 2 402 Q4302 D 2N7002 PM_SLP_S3BATT 1 G SOT23-LF S 2 6 D PM_SLP_S4_L ENETPWR_S3AC N-CHN 62 47 23 2 G FWPWR_EN_L 1 0 2 FDG6332C_NL SC70-6 1 R4300 41 Q4300 S FWPWR_EN_L_OR_GND ENETPWR_S3 5% 1/16W MF-LF 402 1 R4301 0 5% 1/16W MF-LF 2 402 B B When ENETPWR_S3AC BOMOPTION is active: State FWPWR_EN_L S0 AC 0V 3.3V 0V (3.3V ON) 3.3V 0V (2.