V 0.6A 80 5V / 10mA 100MHz 0.35W 2N727CSM 2N869AXCSM 2N916CSM 2N918ACSM 2N918CSM 2N930CSM BC107CSM BC108CSM BC109CSM BC177CSM BC212CSM BC394CSM BC477CSM BC477XCSM BC477YCSM BC478CSM BC479CSM BC847BCSM BCW29CSM BCW30CSM BCW31CSM BCW32CSM BCW33CSM BCW34XCSM BCX17CSM BCY58ACSM BCY58BCSM BCY58CCSM BCY58CSM BCY59ACSM BCY59BCSM BCY59CCSM BCY59CSM BCY70CSM BCY71CSM BCY72CSM BCY78CSM BF257CSM BF258CSM BF259CSM BFT30CSM BFT57CSM BFT58CSM BFT59CSM BFW44CSM PNP PNP NPN NPN NPN NPN NPN NPN NPN PNP PNP NPN PNP PNP PNP PNP PNP NPN PNP PNP PNP PNP NPN NPN PNP NPN NPN NPN NPN NPN NPN NPN NPN PNP PNP PNP PNP NPN NPN NPN NPN NPN NPN NPN PNP LCC1 LCC1 LCC1 LCC1 LCC1 LCC1 LCC1 LCC1 LCC1 LCC1 LCC1 LCC1 LCC1 LCC1 LCC1 LCC1 LCC1 LCC1 LCC1 LCC1 LCC1 LCC1 LCC1 LCC1 LCC1 LCC1 LCC1 LCC1 LCC1 LCC1 LCC1 LCC1 LCC1 LCC1 LCC1 LCC1 LCC1 LCC1 LCC1 LCC1 LCC1 LCC1 LCC1 LCC1 LCC1 20V 25V 25V 15V 15V 45V 45V 20V 20V 45V 50V 160V 80V 80V 80V 40V 40V 45V 32V 32V 32V 32V 20V 45V 45V 32V 32V 32V 32V 45V 45V 45V 45V 40V 45V 25V 32V 160V 2

BCX17LT1, BCX18LT1, PNP BCX19LT1, NPN General Purpose Transistors Voltage and Current are Negative for PNP Transistors http://onsemi.com PNP Features NPN COLLECTOR 3 * Pb-Free Packages are Available COLLECTOR 3 1 BASE 1 BASE MAXIMUM RATINGS Rating Symbol Value Unit Collector - Emitter Voltage BCX17LT1, BCX19LT1 BCX18LT1 VCEO Collector - Base Voltage BCX17LT1, BCX19LT1 BCX18LT1 VCBO Emitter - Base Voltage VEBO 5.0 Vdc IC 500 mAdc Collector Current - Continuous Vdc 45 25 3 Vdc 50 30 1 2 SOT-23 CASE 318 STYLE 6 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR- 5 Board (Note 1), TA = 25C Derate above 25C PD 225 mW 1.8 mW/C Thermal Resistance, Junction-to-Ambient Total Device Dissipation Alumina Substrate, (Note 2) TA = 25C Derate above 25C Thermal Resistance, Junction-to-Ambient Junction and Storage Temperature 2 EMITTER 2 EMITTER MARKING DIAGRAM 556 C/W 300 2.4 mW mW/C RqJA 417 C/W TJ, Tstg -55 to +150 C RqJA PD Maximum ratings are those va

BCX17LT1/D COLLECTOR 3 General Purpose ' 7 BASE Transistors 2 EMITTER COLLECTOR 3 1 BASE 2 EMITTER MAXIMUM RATINGS Value BCX17LT1 BCX18LT1 Rating Symbol | BCX19LT1 BCX20LT1 Unit CollectorEmitter Voltage VCEO 45 25 Vde CollectorBase Voltage VCBO 50 30 Vde EmitterBase Voltage VEBO 5.0 Vde Collector Current Continuous Ic 500 mAdc DEVICE MARKING PNP BCX17LT1 BCX18LT1 NPN BCX19LT1 BCX20LT1 Voltage and current are negative for PNP transistors CASE 318-08, STYLE 6 SOT-23 (TO-236AB) BCX17LT1 = 11; BCX18LT1 = T2; BCX19LT1 = U1; BCX20LT1 = U2 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR-5 Board (1) Pp 225 mW Ta = 25C Derate above 25C 1.8 mW/C Thermal Resistance, Junction to Ambient ReJA 556 C/W Total Device Dissipation PD 300 mW Alumina Substrate, (2) Ta = 25C Derate above 25C 2.4 mW/C Thermal Resistance, Junction to Ambient ReJA 417 C/W Junction and Storage Temperature TJ: Tstg 55 to +150 C 1. FR-5 = 1.0 x 0.75 x 0.062 in. 2. Alu

BCX17; BCX18 PNP general purpose transistors Product data sheet Supersedes data of 1999 May 31 2004 Jan 16 NXP Semiconductors Product data sheet PNP general purpose transistors BCX17; BCX18 FEATURES PINNING * High current (max. 500 mA) PIN * Low voltage (max. 45 V). APPLICATIONS DESCRIPTION 1 base 2 emitter 3 collector * Saturated switching and driver applications e.g. for industrial service * Thick and thin-film circuits. DESCRIPTION handbook, halfpage 3 PNP transistor in a SOT23 plastic package. NPN complement: BCX19. 3 1 MARKING 2 MARKING CODE(1) TYPE NUMBER BCX17 T1* BCX18 T2* 1 Top view 2 MAM256 Note 1. * = p : Made in Hong Kong. * = t : Made in Malaysia. * = W : Made in China. Fig.1 Simplified outline (SOT23) and symbol. ORDERING INFORMATION TYPE NUMBER BCX17 PACKAGE NAME - DESCRIPTION plastic surface mounted package; 3 leads BCX18 2004 Jan 16 2 VERSION SOT23 NXP Semiconductors Product data sheet PNP general purpose transistors BCX17; BCX1

BCX17LT1G, PNP BCX18LT1G, PNP BCX19LT1G, NPN SBCX19LT1G, NPN General Purpose Transistors http://onsemi.com Voltage and Current are Negative for PNP Transistors SOT-23 (TO-236) CASE 318-08 STYLE 6 Features AEC-Q101 Qualified and PPAP Capable S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant* MAXIMUM RATINGS Rating Symbol Value Unit Collector - Emitter Voltage BCX17, BCX19 BCX18 VCEO Collector - Base Voltage BCX17, BCX19 BCX18 VCBO Emitter - Base Voltage VEBO 5.0 Vdc IC 500 mAdc Characteristic Symbol Max Unit Total Device Dissipation FR- 5 Board (Note 1), TA = 25C Derate above 25C PD 225 mW 1.8 mW/C 556 C/W 300 2.4 mW mW/C Collector Current - Continuous PNP COLLECTOR 3 1 BASE Total Device Dissipation Alumina Substrate, (Note 2) TA = 25C Derate above 25C Thermal Resistance, Junction-to-Ambient Junction and Storage Temperature RqJA PD COLLECTOR 3 1 BASE

BCX17LT1, BCX18LT1, PNP BCX19LT1, NPN General Purpose Transistors (Voltage and Current are negative for PNP transistors) http://onsemi.com COLLECTOR 3 1 BASE MAXIMUM RATINGS PNP Value BCX18LT1 Symbol BCX17LT1 BCX19LT1 Collector-Emitter Voltage VCEO 45 25 Vdc Collector-Base Voltage VCBO 50 30 Vdc Emitter-Base Voltage VEBO 5.0 Vdc IC 500 mAdc Rating Collector Current -- Continuous 2 EMITTER Unit COLLECTOR 3 1 BASE NPN 2 EMITTER DEVICE MARKING BCX17LT1 = T1; BCX18LT1 = T2; BCX19LT1 = U1 3 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit PD 225 mW 1.8 mW/C RJA 556 C/W PD 300 mW 2.4 mW/C RJA 417 C/W TJ, Tstg - 55 to +150 C Total Device Dissipation FR-5 Board (1) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Junction and Storage Temperature 1 2 SOT-23 (TO-236AB) CASE 318 STYLE 6 DEVICE MARKING YYx 1. FR-5 = 1.0 x 0.75 x 0.062 in. 2. Alumin

BCX17LT1, BCX18LT1, PNP BCX19LT1, NPN General Purpose Transistors (Voltage and Current are negative for PNP transistors) http://onsemi.com PNP Features COLLECTOR 3 * Pb-Free Package is Available 1 BASE 2 EMITTER MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage BCX17LT1, BCX19LT1 BCX18LT1 VCEO Collector-Base Voltage BCX17LT1, BCX19LT1 BCX18LT1 VCBO Emitter -Base Voltage VEBO 5.0 Vdc IC 500 mAdc Collector Current - Continuous NPN Vdc COLLECTOR 3 45 25 1 BASE Vdc 50 30 Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 2 EMITTER 3 SOT-23 CASE 318 STYLE 6 1 2 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR- 5 Board (Note 1), TA = 25C Derate ab

BCX17; BCX18 PNP general purpose transistors Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Feb 28 Philips Semiconductors Product specification PNP general purpose transistors BCX17; BCX18 FEATURES PINNING * High current (max. 500 mA) PIN * Low voltage (max. 45 V). APPLICATIONS DESCRIPTION 1 base 2 emitter 3 collector * Saturated switching and driver applications e.g. for industrial service * Thick and thin-film circuits. handbook, halfpage 3 3 DESCRIPTION 1 PNP transistor in a SOT23 plastic package. NPN complements: BCX19 and BCX20. 2 1 2 MARKING Top view TYPE NUMBER MAM256 MARKING CODE BCX17 T1p BCX18 T2p Fig.1 Simplified outline (SOT23) and symbol. QUICK REFERENCE DATA SYMBOL VCBO VCEO PARAMETER collector-base voltage CONDITIONS MIN. MAX. UNIT open emitter BCX17 - -50 V BCX18 - -30 V BCX17 - -45 V BCX18 - -25 V collector-emitter voltage open base ICM peak collector current - -1 A Ptot tot

BCX17LT1G, PNP BCX18LT1G, PNP BCX19LT1G, NPN SBCX19LT1G, NPN General Purpose Transistors www.onsemi.com Voltage and Current are Negative for PNP Transistors SOT-23 (TO-236) CASE 318-08 STYLE 6 Features * S and NSV Prefix for Automotive and Other Applications Requiring * Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant PNP NPN COLLECTOR 3 COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector - Emitter Voltage BCX17, BCX19 BCX18 VCEO Collector - Base Voltage BCX17, BCX19 BCX18 VCBO Emitter - Base Voltage VEBO 5.0 Vdc IC 500 mAdc Characteristic Symbol Max Unit Total Device Dissipation FR- 5 Board (Note 1), TA = 25C Derate above 25C PD 225 mW 1.8 mW/C 556 C/W Collector Current - Continuous 1 BASE 1 BASE Vdc 45 25 2 EMITTER Vdc 50 30 MARKING DIAGRAM XX M G G THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Ambient Total Device Dissipation Alumina Substrate,

BCX17LT1G, PNP BCX18LT1G, PNP BCX19LT1G, NPN SBCX19LT1G, NPN General Purpose Transistors www.onsemi.com Voltage and Current are Negative for PNP Transistors SOT-23 (TO-236) CASE 318-08 STYLE 6 Features * S and NSV Prefix for Automotive and Other Applications Requiring * Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant PNP NPN COLLECTOR 3 COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector - Emitter Voltage BCX17, BCX19 BCX18 VCEO Collector - Base Voltage BCX17, BCX19 BCX18 VCBO Emitter - Base Voltage VEBO 5.0 Vdc IC 500 mAdc Characteristic Symbol Max Unit Total Device Dissipation FR- 5 Board (Note 1), TA = 25C Derate above 25C PD 225 mW 1.8 mW/C 556 C/W Collector Current - Continuous 1 BASE 1 BASE Vdc 45 25 2 EMITTER Vdc 50 30 MARKING DIAGRAM XX M G G THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Ambient Total Device Dissipation Alumina Substrate,

BCX17LT1, BCX18LT1, PNP BCX19LT1, NPN General Purpose Transistors (Voltage and Current are Negative for PNP Transistors) http://onsemi.com PNP Features COLLECTOR 3 * Pb-Free Package is Available 1 BASE 2 EMITTER MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage BCX17LT1, BCX19LT1 BCX18LT1 VCEO Collector-Base Voltage BCX17LT1, BCX19LT1 BCX18LT1 VCBO Emitter -Base Voltage VEBO 5.0 Vdc IC 500 mAdc Collector Current - Continuous NPN Vdc COLLECTOR 3 45 25 1 BASE Vdc 50 30 Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 2 EMITTER 3 SOT-23 CASE 318 STYLE 6 1 2 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR- 5 Board (Note 1), TA = 25C Derate ab

BCX17; BCX18 PNP general purpose transistors Product specification Supersedes data of 1999 May 31 2004 Jan 16 Philips Semiconductors Product specification PNP general purpose transistors BCX17; BCX18 PINNING FEATURES * High current (max. 500 mA) PIN * Low voltage (max. 45 V). APPLICATIONS DESCRIPTION 1 base 2 emitter 3 collector * Saturated switching and driver applications e.g. for industrial service * Thick and thin-film circuits. DESCRIPTION handbook, halfpage 3 PNP transistor in a SOT23 plastic package. NPN complement: BCX19. 3 1 MARKING 2 MARKING CODE(1) TYPE NUMBER BCX17 T1* BCX18 T2* 1 Top view 2 MAM256 Note 1. * = p : Made in Hong Kong. * = t : Made in Malaysia. * = W : Made in China. Fig.1 Simplified outline (SOT23) and symbol. ORDERING INFORMATION TYPE NUMBER BCX17 PACKAGE NAME - DESCRIPTION plastic surface mounted package; 3 leads BCX18 2004 Jan 16 2 VERSION SOT23 Philips Semiconductors Product specification PNP general purpose transistors B

BCX17 HZG Datasheet PNP small signal transistor AEC-Q101 Qualified l Outline Parameter Value VCES -50V IC -500mA SOT-23 SST3 l Features l Inner circuit 1)High gain and low saturation voltage. 2)Ideal for small load switching applications. 3)Complements the BCX19 HZG. l Application AUDIO FREQUENCY SMALL SIGNAL AMPLIFIER l Packaging specifications Part No. Package Package size Taping code BCX17 HZG SOT-23 (SST3) 2924 T116 Reel size Tape width (mm) (mm) 180 8 Basic ordering unit.(pcs) Marking 3000 GT1 www.rohm.com (c) 2016 ROHM Co., Ltd. All rights reserved. 1/6 20160617 - Rev.001 BCX17 HZG Datasheet l Absolute maximum ratings (Ta = 25C) Parameter Symbol Values Unit VCES -50 V VCEO -45 V VEBO -5 V IC -500 mA ICP -1 A PD*1 200 mW PD*2 350 mW PD*3 425 mW Tj 150 Tstg -65 to +150 Collector-emitter voltage Emitter-base voltage Collector current Power dissipation Junction temperature Range of storage temperature l Electrical characteristics (Ta = 25C) Parameter Symbol Conditions

BCX17 PNP General-Purpose Amplifier Description 3 This device is designed for general-purpose amplifiers and switching applications at currents to 0.5 A. Sourced from process 78. 2 1 SOT-23 Mark: T1 1. Base 2. Emitter 3. Collector Ordering Information Part Number Marking Package Packing Method BCX17 T1 SOT-23 3L Tape and Reel Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TC = 25C unless otherwise noted. Symbol Parameter Value Unit VCEO Collector-Emitter Voltage -45 V VCBO Collector-Base Voltage -50 V VEBO Emitter-Base Voltage -5 V -500 mA -55 to +150 C IC TJ , TSTG Collector Current - Continuous Junction and S

BCX17LT1G, PNP BCX18LT1G, PNP BCX19LT1G, NPN SBCX19LT1G, NPN General Purpose Transistors http://onsemi.com Voltage and Current are Negative for PNP Transistors SOT-23 (TO-236) CASE 318-08 STYLE 6 Features * S and NSV Prefix for Automotive and Other Applications Requiring * Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant* PNP NPN COLLECTOR 3 COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector - Emitter Voltage BCX17, BCX19 BCX18 VCEO Collector - Base Voltage BCX17, BCX19 BCX18 VCBO Emitter - Base Voltage VEBO 5.0 Vdc IC 500 mAdc Characteristic Symbol Max Unit Total Device Dissipation FR- 5 Board (Note 1), TA = 25C Derate above 25C PD 225 mW 1.8 mW/C 556 C/W Collector Current - Continuous 1 BASE 1 BASE Vdc 45 25 2 EMITTER Vdc 50 30 MARKING DIAGRAM XX M G G THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Ambient Total Device Dissipation Alumina Substra