BCV46 PNP Silicon Darlington Transistors 3 For general AF applications High collector current High current gain Complementary types: BCV27, BCV47 (NPN) 2 1 Type Marking Pin Configuration BCV26 FDs 1=B 2=E 3=C SOT23 BCV46 FEs 1=B 2=E 3=C SOT23 VPS05161 Package Maximum Ratings Parameter Symbol Collector-emitter voltage Unit BCV26 BCV46 VCEO 30 60 Collector-base voltage VCBO 40 80 Emitter-base voltage VEBO 10 10 DC collector current IC 500 Peak collector current ICM 800 Base current IB 100 Peak base current IBM 200 Total power dissipation, TS = 74 C Ptot 360 mW Junction temperature Tj 150 C Storage temperature Tstg V mA -65 ... 150 Thermal Resistance Junction - soldering point1) RthJS 210 K/W 1For calculation of R thJA please refer to Application Note Thermal Resistance 1 Jul-13-2001 BCV26, BCV46 Electrical Characteristics at TA = 25C, unless otherwise specified. Parameter Symbol Values min. typ. Unit max. DC Characteristics Collector-emitter breakdown voltage

BCV46 FEATURES PINNING High current (max. 500 mA) PIN DESCRIPTION e Low voltage (max. 60 V) 1 base e Very high DC current gain (min. 10000). 2 emitter 3 collector APPLICATIONS e Where very high amplification is required. DESCRIPTION PNP Darlington transistor in a SOT23 plastic package. KH $ } i NPN complements: BCV27 and BCV47. - ! TR2 MARKING 4 4 ; t TYPE NUMBER MARKING CODE) MAMz99 Top view BCV26 FD BCV46 FE Note 1. *=p: Made in Hong Kong. Fig.1 Simplified outline (SOT23) and symbol. * = t : Made in Malaysia. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VcsBo collector-base voltage open emitter BCV26 - 40 Vv BCV46 - 80 Vv Voces collector-emitter voltage Vee = 0 BCV26 - -30 Vv BCV46 - 60 Vv VeBo emitter-base voltage open collector - -10 V Ic collector current (DC) - 500 mA lom peak collector current - 800 mA Ip base current (DC) - 100 mA Prot total power dissipation Tamb < 25 C;

BCV46 PNP Silicon Darlington Transistors * For general AF applications 2 3 * High collector current 1 * High current gain * Complementary types: BCV27, BCV47 (NPN) * Pb-free (RoHS compliant) package 1) * Qualified according AEC Q101 Type Marking Pin Configuration Package BCV26 FDs 1=B 2=E 3=C SOT23 BCV46 FEs 1=B 2=E 3=C SOT23 Maximum Ratings Parameter Symbol Collector-emitter voltage VCEO Value V BCV26 30 BCV46 60 Collector-base voltage Unit VCBO BCV26 40 BCV46 80 Emitter-base voltage VEBO 10 Collector current IC 500 Peak collector current ICM 800 Base current IB 100 Peak base current IBM 200 Total power dissipation- Ptot 360 mW Junction temperature Tj 150 C Storage temperature Tstg mA TS 74 C 1Pb-containing -65 ... 150 package may be available upon special request 1 2007-04-20 BCV26, BCV46 Thermal Resistance Parameter Junction - soldering point 1) 1For Symbol RthJS Value 210 Unit K/W calculation of RthJA please refer to Application Note Thermal

BCV46 PNP Darlington transistors Product data sheet Supersedes data of 1999 Apr 08 2004 Jan 13 NXP Semiconductors Product data sheet PNP Darlington transistors BCV26; BCV46 FEATURES PINNING * High current (max. 500 mA) PIN DESCRIPTION * Low voltage (max. 60 V) 1 base * Very high DC current gain (min. 10 000). 2 emitter 3 collector APPLICATIONS * Where very high amplification is required. DESCRIPTION handbook, halfpage PNP Darlington transistor in a SOT23 plastic package. NPN complements: BCV27 and BCV47. 3 1 3 TR1 TR2 MARKING MARKING CODE(1) TYPE NUMBER BCV26 FD* BCV46 FE* 1 2 2 MAM299 Top view Note 1. * = p : Made in Hong Kong. * = t : Made in Malaysia. * = W : Made in China. Fig.1 Simplified outline (SOT23) and symbol. ORDERING INFORMATION TYPE NUMBER BCV26 PACKAGE NAME - DESCRIPTION plastic surface mounted package; 3 leads BCV46 2004 Jan 13 2 VERSION SOT23 NXP Semiconductors Product data sheet PNP Darlington transistors BCV26; BCV46 LIMITING

BCV46 PNP Darlington transistors Product specification Supersedes data of 1999 Apr 08 2004 Jan 13 Philips Semiconductors Product specification PNP Darlington transistors BCV26; BCV46 FEATURES PINNING * High current (max. 500 mA) PIN DESCRIPTION * Low voltage (max. 60 V) 1 base * Very high DC current gain (min. 10000). 2 emitter 3 collector APPLICATIONS * Where very high amplification is required. DESCRIPTION handbook, halfpage PNP Darlington transistor in a SOT23 plastic package. NPN complements: BCV27 and BCV47. 3 1 3 TR1 TR2 MARKING MARKING CODE(1) TYPE NUMBER BCV26 FD* BCV46 FE* 1 2 2 MAM299 Top view Note 1. * = p : Made in Hong Kong. * = t : Made in Malaysia. * = W : Made in China. Fig.1 Simplified outline (SOT23) and symbol. ORDERING INFORMATION TYPE NUMBER BCV26 PACKAGE NAME - DESCRIPTION plastic surface mounted package; 3 leads BCV46 2004 Jan 13 2 VERSION SOT23 Philips Semiconductors Product specification PNP Darlington transistors BCV26; BCV46<

BCV46 PNP Darlington transistors Product specification Supersedes data of 1997 Apr 23 1999 Apr 08 Philips Semiconductors Product specification PNP Darlington transistors BCV26; BCV46 FEATURES PINNING * High current (max. 500 mA) PIN DESCRIPTION * Low voltage (max. 60 V) 1 base * Very high DC current gain (min. 10000). 2 emitter 3 collector APPLICATIONS * Where very high amplification is required. DESCRIPTION handbook, halfpage 3 PNP Darlington transistor in a SOT23 plastic package. NPN complements: BCV27 and BCV47. 1 3 TR1 TR2 MARKING 1 2 2 MARKING CODE(1) TYPE NUMBER BCV26 FD BCV46 FE MAM299 Top view Note 1. = p : Made in Hong Kong. = t : Made in Malaysia. Fig.1 Simplified outline (SOT23) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCES PARAMETER collector-base voltage CONDITIONS MIN. MAX. UNIT open emitter BCV26 - -40 V BCV46 - -80 V BCV26 - -30 V BCV46 - -60 V collector-emitter volt

BCV46 PNP Silicon Darlington Transistors * For general AF applications 2 3 * High collector current 1 * High current gain * Complementary types: BCV27, BCV47 (NPN) * Pb-free (RoHS compliant) package * Qualified according AEC Q101 Type Marking Pin Configuration Package BCV26 FDs 1=B 2=E 3=C SOT23 BCV46 FEs 1=B 2=E 3=C SOT23 Maximum Ratings Parameter Symbol Collector-emitter voltage VCEO Value V BCV26 30 BCV46 60 Collector-base voltage Unit VCBO BCV26 40 BCV46 80 Emitter-base voltage VEBO 10 Collector current IC 500 Peak collector current, tp 10 ms ICM 800 Base current IB 100 Peak base current IBM 200 Total power dissipation- Ptot 360 mW Junction temperature Tj 150 C Storage temperature Tstg mA TS 74 C 1 -65 ... 150 2011-10-05 BCV26, BCV46 Thermal Resistance Parameter Junction - soldering point1) Symbol RthJS Value 210 Unit K/W 1For calculation of R thJA please refer to Application Note AN077 (Thermal Resistance Calculation) Electrical Characteris

BCV46 PNP Silicon Darlington Transistors * For general AF applications 2 3 * High collector current 1 * High current gain * Complementary types: BCV27, BCV47 (NPN) * Pb-free (RoHS compliant) package * Qualified according AEC Q101 Type Marking Pin Configuration Package BCV26 FDs 1=B 2=E 3=C SOT23 BCV46 FEs 1=B 2=E 3=C SOT23 Maximum Ratings Parameter Symbol Collector-emitter voltage VCEO Value V BCV26 30 BCV46 60 Collector-base voltage Unit VCBO BCV26 40 BCV46 80 Emitter-base voltage VEBO 10 Collector current IC 500 Peak collector current, tp 10 ms ICM 800 Base current IB 100 Peak base current IBM 200 Total power dissipation- Ptot 360 mW Junction temperature Tj 150 C Storage temperature Tstg mA TS 74 C 1 -65 ... 150 2011-10-05 BCV26, BCV46 Thermal Resistance Parameter Junction - soldering point1) Symbol RthJS Value 210 Unit K/W 1For calculation of R thJA please refer to Application Note AN077 (Thermal Resistance Calculation) Electrical Characteris

BCV46 PNP Silicon Darlington Transistors * For general AF applications 2 3 * High collector current 1 * High current gain * Complementary types: BCV27, BCV47 (NPN) * Pb-free (RoHS compliant) package * Qualified according AEC Q101 Type Marking Pin Configuration Package BCV26 FDs 1=B 2=E 3=C SOT23 BCV46 FEs 1=B 2=E 3=C SOT23 Maximum Ratings Parameter Symbol Collector-emitter voltage VCEO Value V BCV26 30 BCV46 60 Collector-base voltage Unit VCBO BCV26 40 BCV46 80 Emitter-base voltage VEBO 10 Collector current IC 500 Peak collector current, tp 10 ms ICM 800 Base current IB 100 Peak base current IBM 200 Total power dissipation- Ptot 360 mW Junction temperature Tj 150 C Storage temperature Tstg mA TS 74 C 1 -65 ... 150 2011-10-05 BCV26, BCV46 Thermal Resistance Parameter Junction - soldering point1) Symbol RthJS Value 210 Unit K/W 1For calculation of R thJA please refer to Application Note AN077 (Thermal Resistance Calculation) Electrical Characteris

BCV46 PNP Silicon Darlington Transistors * For general AF applications * High collector current 2 3 * High current gain 1 * Complementary types: BCV27, BCV47 (NPN) Type Marking Pin Configuration Package BCV26 FDs 1=B 2=E 3=C SOT23 BCV46 FEs 1=B 2=E 3=C SOT23 Maximum Ratings Parameter Symbol Collector-emitter voltage VCEO Value V BCV26 30 BCV46 60 Collector-base voltage Unit VCBO BCV26 40 BCV46 80 Emitter-base voltage VEBO 10 Collector current IC 500 Peak collector current ICM 800 Base current IB 100 Peak base current IBM 200 Total power dissipation- Ptot 360 mW Junction temperature Tj 150 C Storage temperature Tstg Thermal Resistance Parameter Junction - soldering point 1) Symbol RthJS mA TS 74 C -65 ... 150 Value 210 Unit K/W 1For calculation of R thJA please refer to Application Note Thermal Resistance 1 2005-12-30 BCV26, BCV46 Electrical Characteristics at TA = 25C, unless otherwise specified Parameter Symbol Values min. typ. max. DC Characte

BCV46 PNP Silicon Darlington Transistors * For general AF applications 2 3 * High collector current 1 * High current gain * Complementary types: BCV27, BCV47 (NPN) * Pb-free (RoHS compliant) package 1) * Qualified according AEC Q101 Type Marking Pin Configuration Package BCV26 FDs 1=B 2=E 3=C SOT23 BCV46 FEs 1=B 2=E 3=C SOT23 Maximum Ratings Parameter Symbol Collector-emitter voltage VCEO Value V BCV26 30 BCV46 60 Collector-base voltage Unit VCBO BCV26 40 BCV46 80 Emitter-base voltage VEBO 10 Collector current IC 500 Peak collector current ICM 800 Base current IB 100 Peak base current IBM 200 Total power dissipation- Ptot 360 mW Junction temperature Tj 150 C Storage temperature Tstg mA TS 74 C 1Pb-containing -65 ... 150 package may be available upon special request 1 http://store.iiic.cc/ 2007-04-20 BCV26, BCV46 Thermal Resistance Parameter Junction - soldering point 1) 1For Symbol RthJS Value 210 Unit K/W calculation of RthJA please refer to Ap

s related to the data sheet, please contact our nearest sales office via e-mail or telephone (details via salesaddresses@nexperia.com). Thank you for your cooperation and understanding, Kind regards, Team Nexperia DISCRETE SEMICONDUCTORS DATA SHEET BCV26; BCV46 PNP Darlington transistors Product data sheet Supersedes data of 1999 Apr 08 2004 Jan 13 NXP Semiconductors Product data sheet PNP Darlington transistors BCV26; BCV46 FEATURES PINNING * High current (max. 500 mA) PIN DESCRIPTION * Low voltage (max. 60 V) 1 base * Very high DC current gain (min. 10 000). 2 emitter 3 collector APPLICATIONS * Where very high amplification is required. DESCRIPTION handbook, halfpage PNP Darlington transistor in a SOT23 plastic package. NPN complements: BCV27 and BCV47. 3 1 3 TR1 TR2 MARKING MARKING CODE(1) TYPE NUMBER BCV26 FD* BCV46 FE* 1 2 2 MAM299 Top view Note 1. * = p : Made in Hong Kong. * = t : Made in Malaysia. * = W : Made in China. Fig.1 Simplified outline (SOT23) and symbol

BCV46 PNP Darlington transistors Product data sheet Supersedes data of 1999 Apr 08 2004 Jan 13 NXP Semiconductors Product data sheet PNP Darlington transistors BCV26; BCV46 FEATURES PINNING * High current (max. 500 mA) PIN DESCRIPTION * Low voltage (max. 60 V) 1 base * Very high DC current gain (min. 10 000). 2 emitter 3 collector APPLICATIONS * Where very high amplification is required. DESCRIPTION handbook, halfpage PNP Darlington transistor in a SOT23 plastic package. NPN complements: BCV27 and BCV47. 3 1 3 TR1 TR2 MARKING MARKING CODE(1) TYPE NUMBER BCV26 FD* BCV46 FE* 1 2 2 MAM299 Top view Note 1. * = p : Made in Hong Kong. * = t : Made in Malaysia. * = W : Made in China. Fig.1 Simplified outline (SOT23) and symbol. ORDERING INFORMATION TYPE NUMBER BCV26 PACKAGE NAME - DESCRIPTION plastic surface mounted package; 3 leads BCV46 2004 Jan 13 2 VERSION SOT23 NXP Semiconductors Product data sheet PNP Darlington transistors BCV26; BCV46 LIMITING

BCV46 PNP Darlington Transistors for preamplifier input applications SOT-23 Plastic Package Absolute Maximum Ratings (Ta = 25 C) Parameter O Symbol BCV26 BCV46 BCV26 BCV46 Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Value Unit 40 80 30 60 -VCBO -VCEO V V -VEBO 10 V Collector Current -IC 500 mA Peak Collector Current -ICM 800 mA Base Current -IB 100 mA Total Power Dissipation Ptot 200 mW Junction Temperature Tj 150 O Storage Temperature Range TS - 65 to + 150 O Characteristics at Ta = 25 C Parameter DC Current Gain at -VCE = 5 V, -IC = 1 mA C C O at -VCE = 5 V, -IC = 10 mA at -VCE = 5 V, -IC = 100 mA Collector Cutoff Current at -VCB = 30 V at -VCB = 60 V Emitter Cutoff Current at -VEB = 10 V Collector Base Breakdown Voltage at -IC = 100 A Collector Emitter Breakdown Voltage at -IC = 10 mA Emitter Base Breakdown Voltage at -IE = 10 A Collector Emitter Saturation Voltage at -IC = 100 mA, -IB = 0.1 mA Base Emitter Saturation Voltage at -IC = 100 mA,

BCV46 PNP Darlington transistors Product specification Supersedes data of 1997 Apr 23 Philips Semiconductors VT 1999 Apr 08 PHILIPSPhilips Semiconductors Product specification meee ee ee ee PNP Darlington transistors BCV26; BCV46 meee ee ee ee FEATURES PINNING e High current (max. 500 mA) PIN DESCRIPTION e Low voltage (max. 60 V) { base e Very high DC current gain (min. 10000). 2 emitter 3 collector APPLICATIONS e Where very high amplification is required. DESCRIPTION PNP Darlington transistor in a SOT23 plastic package. KH $ } i NPN complements: BCV27 and BCV47. vat ! TR2 MARKING 4 4 ; t TYPE NUMBER MARKING CODE) MAM29g BCV26 FD# Tepview BCV46 FE* Note 1. *=p: Made in Hong Kong. Fig.1 Simplified outline (SOT23) and symbol. * = t: Made in Malaysia. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Vcso collector-base voltage open emitter BCV26 - 40 V BCV46 - 80 V Voces collector-emitte