BC807-16LT1G, BC807-25LT1G, BC807-40LT1G General Purpose Transistors http://onsemi.com PNP Silicon COLLECTOR 3 Features * These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant 1 BASE 2 EMITTER MAXIMUM RATINGS Rating Symbol Value Unit Collector - Emitter Voltage VCEO -45 V Collector - Base Voltage VCBO -50 V Emitter - Base Voltage VEBO -5.0 V IC -500 mAdc Characteristic Symbol Max Unit Total Device Dissipation FR- 5 Board, (Note 1) TA = 25C Derate above 25C PD 225 1.8 mW mW/C 556 C/W 300 2.4 mW mW/C RqJA 417 C/W TJ, Tstg -55 to +150 C Collector Current - Continuous 3 1 2 THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Ambient Total Device Dissipation Alumina Substrate, (Note 2) TA = 25C Derate above 25C Thermal Resistance, Junction-to-Ambient Junction and Storage Temperature RqJA PD Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended expo

BC807-16LT1 BC807-25LT1 BC807-40LT1 General Purpose Transistors PNP Silicon MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCEO -45 V Collector-Base Voltage VCBO -50 V Emitter-Base Voltage VEBO -5.0 V IC -500 mAdc Collector Current -- Continuous 3 1 2 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit 225 1.8 mW mW/C 556 C/W 300 2.4 mW mW/C RJA 417 C/W TJ, Tstg -55 to +150 C Total Device Dissipation FR-5 Board, (1) TA = 25C Derate above 25C PD Thermal Resistance, Junction to Ambient RJA Total Device Dissipation Alumina Substrate, (2) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Junction and Storage Temperature CASE 318-08, STYLE 6 SOT-23 (TO-236AB) COLLECTOR 3 PD 1 BASE DEVICE MARKING 2 EMITTER BC807-16LT1 = 5A; BC807-25LT1 = 5B; BC807-40LT1 = 5C ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit Collector-Emitter Breakdown Voltage (IC = -10 mA) V(BR)CEO -45 -- -- V Collector-Emitter Breakd

verbar may vary depending upon manufacturing location. ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. (c) Semiconductor Components Industries, LLC, 1997 October, 2016 - Rev. 14 1 Publication Order Number: BC807-16LT1/D BC807-16L, BC807-25L, BC807-40L ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit Collector -Emitter Breakdown Voltage (IC = -10 mA) V(BR)CEO -45 - - V Collector -Emitter Breakdown Voltage (VEB = 0, IC = -10 mA) V(BR)CES -50 - - V Emitter -Base Breakdown Voltage (IE = -1.0 mA) V(BR)EBO -5.0 - - V - - - - -100 -5.0 nA mA 100 160 250 40 - - - - 250 400 600 - OFF CHARACTERISTICS Collector Cutoff Current (VCB = -20 V) (VCB = -20 V, TJ = 150C) ICBO ON CHARACTERISTICS hFE DC Current Gain (IC = -100 mA, VCE = -1.0 V) BC807-16, SBC80-16L BC807-25, SBC807-25L BC807-40, SBC807-40L (IC = -500 mA, VCE = -1.0 V) - Collector -Emitter Saturation Voltage (IC = -500 mA, IB = -50 mA) VCE(sat) - - -0

BC807-16LT1, BC807-25LT1, BC807-40LT1 General Purpose Transistors PNP Silicon http://onsemi.com Features * Pb-Free Packages are Available COLLECTOR 3 1 BASE MAXIMUM RATINGS Rating Symbol Value Unit Collector - Emitter Voltage VCEO -45 V Collector - Base Voltage VCBO -50 V Emitter - Base Voltage VEBO -5.0 V IC -500 mAdc Collector Current - Continuous 2 EMITTER 3 THERMAL CHARACTERISTICS Characteristic Symbol Total Device Dissipation FR- 5 Board, (Note 1) TA = 25C Derate above 25C PD Thermal Resistance, Junction-to-Ambient Total Device Dissipation Alumina Substrate, (Note 2) TA = 25C Derate above 25C Thermal Resistance, Junction-to-Ambient Junction and Storage Temperature RqJA Max Unit 1 225 1.8 mW mW/C 556 C/W 2 SOT-23 CASE 318 STYLE 6 PD 300 2.4 mW mW/C RqJA 417 C/W TJ, Tstg -55 to +150 C MARKING DIAGRAM Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure

BC807-16LT1 BC807-25LT1 BC807-40LT1 General Purpose Transistors PNP Silicon MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCEO -45 V Collector-Base Voltage VCBO -50 V Emitter-Base Voltage VEBO -5.0 V IC -500 mAdc Collector Current -- Continuous 3 1 2 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit 225 1.8 mW mW/C 556 C/W 300 2.4 mW mW/C RJA 417 C/W TJ, Tstg -55 to +150 C Total Device Dissipation FR-5 Board, (1) TA = 25C Derate above 25C PD Thermal Resistance, Junction to Ambient RJA Total Device Dissipation Alumina Substrate, (2) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Junction and Storage Temperature CASE 318-08, STYLE 6 SOT-23 (TO-236AB) COLLECTOR 3 PD 1 BASE DEVICE MARKING 2 EMITTER BC807-16LT1 = 5A; BC807-25LT1 = 5B; BC807-40LT1 = 5C ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit Collector-Emitter Breakdown Voltage (IC = -10 mA) V(BR)CEO -45 -- -- V Collector-Emitter Breakd

T1 BC847BLT1 BC847CLT1 BC850BLT1 BC850CLT1 - - MMBT2222ALT1 MMBT3904LT1 - MMBT4401LT1 - BC848ALT1 BC848BLT1 BC848CLT1 BC849BLT1 BC849CLT1 - - - - - MMBT5088LT1 MMBT5089LT1 MMBT4124LT1 BSS63LT1 - - - BC856ALT1 BC856BLT1 MMBT2907ALT1 - - MMBT5087LT1 - - - - BC807-16LT1 BC807-25LT1 BC807-40LT1 - - - - - BC857ALT1 BC857BLT1 - - MMBT3906LT1 - MMBT4403LT1 - - - - - BC858ALT1 BC858BLT1 BC858CLT1 BC859BLT1 BC859CLT1 - - - NPN MPSW05 - PNP hFE fT NF Max MHz Min dB Max 60 - 50 250 500 50 250 - - 80 500 80 - 50 - 100 80 65 65 65 65 60 60 50 50 45 45 45 45 45 45 45 45 45 45 45 45 45 45 40 40 40 40 40 30 30 30 30 30 30 30 30 30 30 30 25 25 100 100 100 100 100 100 600 50 200 50 200 500 500 500 500 500 500 100 100 100 100 100 100 100 600 200 200 600 600 100 100 100 100 100 100 100 100 100 100 50 50 200 30 20 110 200 125 220 100 250 250 250 500 100 160 250 100 160 250 110 200 420 200 420 125 220 100 100 100 100 100 110 200 420 200 420 125 220 420 220 420 300 400 120 - - 220 450 250 475 300 - - - - 250 400 600 25

BC807-16LT1, BC807-25LT1, BC807-40LT1 General Purpose Transistors PNP Silicon http://onsemi.com Features COLLECTOR 3 * Pb-Free Packages are Available 1 BASE MAXIMUM RATINGS Rating Symbol Value Unit Collector - Emitter Voltage VCEO -45 V Collector - Base Voltage VCBO -50 V Emitter - Base Voltage VEBO -5.0 V IC -500 mAdc Collector Current - Continuous Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 2 EMITTER MARKING DIAGRAM SOT-23 CASE 318 STYLE 6 1 2 Symbol Total Device Dissipation FR- 5 Board, (Note 1) TA = 25C Derate above 25C Max Unit 225 1.8 mW mW/C 556 C/W 300 2.4 mW mW/C RJA Total Device Dissipation Alumina Substrate, (Note 2) TA = 25C Derate above 25C PD Thermal Resistance, Junction-to-Ambient RJA 417 C/W TJ

T1 BC847BLT1 BC847CLT1 BC850BLT1 BC850CLT1 - - MMBT2222ALT1 MMBT3904LT1 - MMBT4401LT1 - BC848ALT1 BC848BLT1 BC848CLT1 BC849BLT1 BC849CLT1 - - - - - MMBT5088LT1 MMBT5089LT1 MMBT4124LT1 BSS63LT1 - - - BC856ALT1 BC856BLT1 MMBT2907ALT1 - - MMBT5087LT1 - - - - BC807-16LT1 BC807-25LT1 BC807-40LT1 - - - - - BC857ALT1 BC857BLT1 - - MMBT3906LT1 - MMBT4403LT1 - - - - - BC858ALT1 BC858BLT1 BC858CLT1 BC859BLT1 BC859CLT1 - - - NPN MPSW05 - PNP hFE fT NF Max MHz Min dB Max 60 - 50 250 500 50 250 - - 80 500 80 - 50 - 100 80 65 65 65 65 60 60 50 50 45 45 45 45 45 45 45 45 45 45 45 45 45 45 40 40 40 40 40 30 30 30 30 30 30 30 30 30 30 30 25 25 100 100 100 100 100 100 600 50 200 50 200 500 500 500 500 500 500 100 100 100 100 100 100 100 600 200 200 600 600 100 100 100 100 100 100 100 100 100 100 50 50 200 30 20 110 200 125 220 100 250 250 250 500 100 160 250 100 160 250 110 200 420 200 420 125 220 100 100 100 100 100 110 200 420 200 420 125 220 420 220 420 300 400 120 - - 220 450 250 475 300 - - - - 250 400 600 25

r overbar may vary depending upon manufacturing location. ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. (c) Semiconductor Components Industries, LLC, 1997 July, 2017 - Rev. 15 1 Publication Order Number: BC807-16LT1/D BC807-16L, BC807-25L, BC807-40L ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit Collector -Emitter Breakdown Voltage (IC = -10 mA) V(BR)CEO -45 - - V Collector -Emitter Breakdown Voltage (VEB = 0, IC = -10 mA) V(BR)CES -50 - - V Emitter -Base Breakdown Voltage (IE = -1.0 mA) V(BR)EBO -5.0 - - V - - - - -100 -5.0 nA mA 100 160 250 40 - - - - 250 400 600 - OFF CHARACTERISTICS Collector Cutoff Current (VCB = -20 V) (VCB = -20 V, TJ = 150C) ICBO ON CHARACTERISTICS hFE DC Current Gain (IC = -100 mA, VCE = -1.0 V) BC807-16, SBC80-16L BC807-25, SBC807-25L BC807-40, SBC807-40L (IC = -500 mA, VCE = -1.0 V) - Collector -Emitter Saturation Voltage (IC = -500 mA, IB = -50 mA) VCE(sat) - - -0

BC807-16LT1 BC807-25LT1 BC807-40LT1 General Purpose Transistors PNP Silicon MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCEO -45 V Collector-Base Voltage VCBO -50 V Emitter-Base Voltage VEBO -5.0 V IC -500 mAdc Collector Current -- Continuous 3 1 2 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit 225 1.8 mW mW/C 556 C/W 300 2.4 mW mW/C RJA 417 C/W TJ, Tstg -55 to +150 C Total Device Dissipation FR-5 Board, (1) TA = 25C Derate above 25C PD Thermal Resistance, Junction to Ambient RJA Total Device Dissipation Alumina Substrate, (2) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Junction and Storage Temperature CASE 318-08, STYLE 6 SOT-23 (TO-236AB) COLLECTOR 3 PD 1 BASE DEVICE MARKING 2 EMITTER BC807-16LT1 = 5A; BC807-25LT1 = 5B; BC807-40LT1 = 5C ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit Collector-Emitter Breakdown Voltage (IC = -10 mA) V(BR)CEO -45 -- -- V Collector-Emitter Breakd

BC807-16LT1, BC807-25LT1, BC807-40LT1 General Purpose Transistors PNP Silicon http://onsemi.com Features * Pb-Free Packages are Available COLLECTOR 3 1 BASE MAXIMUM RATINGS Rating Symbol Value Unit Collector - Emitter Voltage VCEO -45 V Collector - Base Voltage VCBO -50 V Emitter - Base Voltage VEBO -5.0 V IC -500 mAdc Collector Current - Continuous 2 EMITTER 3 THERMAL CHARACTERISTICS Characteristic Symbol Total Device Dissipation FR- 5 Board, (Note 1) TA = 25C Derate above 25C PD Thermal Resistance, Junction-to-Ambient Total Device Dissipation Alumina Substrate, (Note 2) TA = 25C Derate above 25C Thermal Resistance, Junction-to-Ambient Junction and Storage Temperature RqJA Max Unit 1 225 1.8 mW mW/C 556 C/W 2 SOT-23 CASE 318 STYLE 6 PD 300 2.4 mW mW/C RqJA 417 C/W TJ, Tstg -55 to +150 C MARKING DIAGRAM Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid

erbar may vary depending upon manufacturing location. ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. (c) Semiconductor Components Industries, LLC, 2014 November, 2014 - Rev. 12 1 Publication Order Number: BC807-16LT1/D BC807-16L, BC807-25L, BC807-40L ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit Collector -Emitter Breakdown Voltage (IC = -10 mA) V(BR)CEO -45 - - V Collector -Emitter Breakdown Voltage (VEB = 0, IC = -10 mA) V(BR)CES -50 - - V Emitter -Base Breakdown Voltage (IE = -1.0 mA) V(BR)EBO -5.0 - - V - - - - -100 -5.0 nA mA 100 160 250 40 - - - - 250 400 600 - OFF CHARACTERISTICS Collector Cutoff Current (VCB = -20 V) (VCB = -20 V, TJ = 150C) ICBO ON CHARACTERISTICS hFE DC Current Gain (IC = -100 mA, VCE = -1.0 V) BC807-16, SBC80-16L BC807-25, SBC807-25L BC807-40, SBC807-40L (IC = -500 mA, VCE = -1.0 V) - Collector -Emitter Saturation Voltage (IC = -500 mA, IB = -50 mA) VCE(sat) - - -0

verbar may vary depending upon manufacturing location. ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. (c) Semiconductor Components Industries, LLC, 1997 October, 2016 - Rev. 14 1 Publication Order Number: BC807-16LT1/D BC807-16L, BC807-25L, BC807-40L ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit Collector -Emitter Breakdown Voltage (IC = -10 mA) V(BR)CEO -45 - - V Collector -Emitter Breakdown Voltage (VEB = 0, IC = -10 mA) V(BR)CES -50 - - V Emitter -Base Breakdown Voltage (IE = -1.0 mA) V(BR)EBO -5.0 - - V - - - - -100 -5.0 nA mA 100 160 250 40 - - - - 250 400 600 - OFF CHARACTERISTICS Collector Cutoff Current (VCB = -20 V) (VCB = -20 V, TJ = 150C) ICBO ON CHARACTERISTICS hFE DC Current Gain (IC = -100 mA, VCE = -1.0 V) BC807-16, SBC80-16L BC807-25, SBC807-25L BC807-40, SBC807-40L (IC = -500 mA, VCE = -1.0 V) - Collector -Emitter Saturation Voltage (IC = -500 mA, IB = -50 mA) VCE(sat) - - -0

BC807-16LT1G, BC807-25LT1G, BC807-40LT1G General Purpose Transistors http://onsemi.com PNP Silicon COLLECTOR 3 Features * These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant 1 BASE 2 EMITTER MAXIMUM RATINGS Rating Symbol Value Unit Collector - Emitter Voltage VCEO -45 V Collector - Base Voltage VCBO -50 V Emitter - Base Voltage VEBO -5.0 V IC -500 mAdc Characteristic Symbol Max Unit Total Device Dissipation FR- 5 Board, (Note 1) TA = 25C Derate above 25C PD 225 1.8 mW mW/C 556 C/W 300 2.4 mW mW/C RqJA 417 C/W TJ, Tstg -55 to +150 C Collector Current - Continuous 3 1 2 THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Ambient Total Device Dissipation Alumina Substrate, (Note 2) TA = 25C Derate above 25C Thermal Resistance, Junction-to-Ambient Junction and Storage Temperature RqJA PD Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended expo

BC807-16LT1G LBC807-25LT1G LBC807-40LT1G FEATURE Collector current capability IC = -500 mA. Collector-emitter voltage VCEO(max) = -45 V. General purpose switching and amplification. 3 PNP complement: LBC807 Series. We declare that the material of product compliance with RoHS requirements. 1 2 DEVICE MARKING AND ORDERING INFORMATION Device Marking SOT-23 Shipping LBC807-16LT1G 5A1 3000/Tape&Reel LBC807-16LT3G 5A1 10000/Tape&Reel LBC807-25LT1G 5B1 3000/Tape&Reel LBC807-25LT3G 5B1 10000/Tape&Reel LBC807-40LT1G 5C1 3000/Tape&Reel LBC807-40LT3G 5C1 10000/Tape&Reel 3 COLLECTOR 1 BASE 2 EMITTER MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage V CEO -45 V Collector-Base Voltage V CBO -50 V Emitter-Base Voltage V -5.0 V -500 mAdc Collector Current -- Continuous EBO IC THERMAL CHARACTERISTICS Characteristic Symbol Max Unit 225 1.8 mW mW/C 556 C/W 300 2.4 mW mW/C R JA 417 C/W T J , T stg -55 to +150 C Total Device Dissipation FR- 5 Board, (1) TA = 25C Derate above 25C PD Therm