z 10MHz 10MHz 80MHz 80MHz 60MHz 60MHz 40MHz 40MHz 40MHz 40MHz 40MHz 40MHz 40MHz 40MHz 40MHz 40MHz 3MHz 3MHz PD 5W 5W 0.8W 0.8W 0.9W 0.9W 0.8W 0.8W 0.8W 0.8W 25W 25W 25W 25W 1W 1W 1W 1W 20W 20W 20W 20W 20W 20W 20W 20W 20W 20W 15W 15W 2N4911XSMD05 2N4911XU3 2N4912SMD05 2N5151SMD05 2N5151U3 2N5151XSMD05 2N5152SMD05 2N5152U3 2N5153SMD05 2N5153U3 2N5154N1B 2N5154SMD05 2N5154XSMD05 2N5664SMD05 2N5664U3 2N5665N1 2N5666SMD05 2N5666U3 2N5667N1 2N5681SMD05 NPN NPN NPN PNP PNP PNP NPN NPN PNP PNP NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN SMD0.5 (TO276AA) SMD0.5 (TO276AA) SMD0.5 (TO276AA) SMD0.5 (TO276AA) SMD0.5 (TO276AA) SMD0.5 (TO276AA) SMD0.5 (TO276AA) SMD0.5 (TO276AA) SMD0.5 (TO276AA) SMD0.5 (TO276AA) SMD0.5 (TO276AA) SMD0.5 (TO276AA) SMD0.5 (TO276AA) SMD0.5 (TO276AA) SMD0.5 (TO276AA) SMD0.5 (TO276AA) SMD0.5 (TO276AA) SMD0.5 (TO276AA) SMD0.5 (TO276AA) SMD0.5 (TO276AA) 60V 60V 80V 80V 80V 80V 75V 75V 80V 80V 80V 80V 80V 200V 200V 300V 200V 200V 300V 100V 4A 4A 1A 5A 5A 5A 5A 5A 5A 5A 5.5A 5A 5A 3A 3A 5A 3A

0} 4.0A] 0.75] 4.0A 4.0M1T 2N4909 Ss} P LPA 150W | C | 200 80] 0 20 80 4.0A 0.75 4.0A 4.0M|T 2N4910 S| N 7-184 LPA 25W | C | 200 40 40] 0 20 | 100 0.5A 0.6 1.0A 25, 5 3.0M|T 2N4911 S| N 7-184 LPA 25W | C | 200 60 604, 0 20 | 100 O.5A 0.6 1.0A 25] E 3.0M)T 2N4912 S| N 7-184 LPA 25W} Cc] 200 80 80] 0 20] 100 0.54 0.6 1.0A 25|E 3.0M| T 2NG913 SEN 7-188 LPA} 87.5W | C} 200 40 4010 25) 100 2.54 1.0 2.58 20|E 4.0M| T 2N4914 S| N 7-188 LPA| 87.5W) C | 200 60 60] 0 25 | 100 2.54 1.0 2.54 20 | E 4.0M/T 2N4915 S| N 7-188 LPA | 87.5W) C | 200 80 80] 0 251 100 2.5A 1.0 2.5A 20) E 4.0M|T 2N4918 S| P 5-47 LPA 30W; C} 150 40 40] 0 20} 100 O,5A 0.6 1.,0A 25] E 3.0M] T 2N4919 S|] P 5-47 LPA 30W} Cc} 150 60 60] 0 201 100 0.54 0.6 1.0A 25] E 3.0M] T 2N49 20 S| P 5-47 LPA 30W) Cc} 150 80 80} 0 20) 100 0.54 0.6 1.0A 25) E 3.0M] T 2N4921 S} N 5-51 LPA 30W} C} 150 40 40] 0 20] 100 O.5A 0.6 1.0A 25] E 3.0M{ T 2N4922 S| N 5-51 LPA 30W} C} 150 60 60] 0 20} 100 O.5A 0.6 1.0A 25] E 3.0M{T 2N4923 S| N 5-51 LPA 30W} C} 150 80

2N4912 are silicon epitaxial planar NPN transistors in Jedec TO-66 metal case. They are intended for use in switching and amplifier applications. The comptementary PNP types are the 2N4898, 2N4899 and 2N4900 respectively. ABSOLUTE MAXIMUM RATINGS 2N4910 | 2N4911 | 2N4912 Vcao Collector-base voltage (I_ = 0) 40V 60V | 80V Vceo Collector-emitter voltage (Ig = 0) 40V 60V 80V Veso Emitter-base voltage (Ic = 0) SV Ic Collector current 4A Ig Base current 1A Prot Total power dissipation at Tease $ 25C 25w Tstg Storage temperature 65 to 200C j Junction temperature 200C MECHANICAL DATA Dimensions in mm Collector connected to case au 65" 3957" i 8 LS o : 8 | 3 2! ; 3 i a & i MT . a rR [s& 3 ia it 61782193 7 ON 365 wg _so TO-66 . SS EON Neen SF tt eePES SHORE FN HR ASL ASEERLLGE SNE PIERS BI BARREN 88 Soe Se Sect ITM N be ng. 2N 4910 2N 4911 2N 4912 THERMAL DATA Rinj-case Thermal resistance junction-case max 7 C/W ELECTRICAL CHARACTERISTICS (Tease = 25C unless otherwise specified) Parameter Tes

2N4912 Silicon NPN Power Transistors DESCRIPTION *With TO-66 package *Low collector saturation voltage *Excellent safe operating area *2N4912 complement to type 2N4900 APPLICATIONS *Designed for driver circuits,switching and amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-66) and symbol Absolute maximum ratings(Ta= ) SYMBOL PARAMETER CONDITIONS 2N4910 VCBO VCEO Collector-base voltage Collector-emitter voltage 2N4911 Open emitter 60 2N4912 80 2N4910 40 2N4911 Emitter-base voltage UNIT 40 Open base 2N4912 VEBO VALUE 60 V V 80 Open collector 5 V IC Collector current 1.0 A IB Base current 1.0 A PD Total Power Dissipation 25 W Tj Junction temperature 150 Tstg Storage temperature -65~200 TC=25 THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 7.0 UNIT /W SavantIC Semiconductor Product Specification 2N4910 2N4911 2N4912 Silicon NPN Power Transistors CHARAC

and found 1 products matching your criteria. Top of Page If you are unable to find a suitable part, please contact us. file:///G|/imaging/BITTING/seme_html/2N4905.php.html [26-Mar-2002 12:17:01 PM] Search Results Part number search for devices beginning "2N4912" Datasheets are downloaded as Acrobat PDF files. Semelab Home Bipolar Products PRODUCT Polarity Package VCEO IC(cont) HFE(min) HFE(max) @ VCE/IC FT PD 2N4912X NPN TO66 80V 4A 20 175 1/0.5 3MHz 25W 2N4912X-JQR-B NPN TO66 80V 4A 20 175 1/0.5 3MHz 25W 2N4912XSMD NPN SMD1 (TO276AB) 80V 4A 20 175 1/0.5 3MHz 25W 2N4912XSMD05 NPN SMD0.5 (TO276AA) 80V 4A 20 175 1/0.5 3MHz 15W 2N4912XSMD05-JQR-B NPN SMD0.5 (TO276AA) 80V 4A 20 175 1/0.5 3MHz 15W 2N4912XSMD-JQR-B NPN SMD1 (TO276AB) 80V 4A 20 175 1/0.5 3MHz 25W Searched through 3083 records and found 6 products matching your criteria. Top of Page If you are unable to find a suitable part, please contact us. file:///G|/imagi

CECC 0003-014 NPN TO66 4 20-100 1/0.5 3M 25 40 2N4910-SM 50003-014 = NPN TO220SM 4 20-100 1/0.5 3M 25 40 2N4911 NPN TO66 4 20-100 10.5 3M 25 60 2N4911 CECC 50003-014 NPN TO66 4 20-100 1/0.5 3M 25 60 2N4911-SM 50003-014 NPN TO220SM 4 20-100 110.5 3M 25 60 2N4912 NPN TO6S 4 20-100 V0.5 3M 25 80 2N4912 CECC 50003-014 NPN TO66 4 20-100 V0.5 3M 25 80 2N4912-SM 0003-014 NPN TO220SM 4 20-100 1/0.5 3M 25 80 2N4912X NPN TO6S M 4 20-175 1/0.5 3M 25 80 2N4913 NPN TO3 5 25/100 4M 88 40 2N4914 NPN TO3 25-100 2/25 4M 88 60 2N4915 NPN TO3 5 25-100 2/2.5 4M 88 80 2N4924 NPN TO39 0.2 40-200 10/0.15 100M 1 100 2N4925 NPN TO39 0.2 40-200 10/0.15 100M 1 150 2N4928 PNP TO39 0.1 20min 10/1m 100M 0.6 100 2N4929 PNP TO39 50m 25-250 10/10m 100M 150 2N4930 PNP TO39 50m 25-200 10/10m 20M 1 200 2N4931 PNP TO39 0.5 20min 10/1m 20M 1 250 2N4937 PNP TO79 50m 50min 10/1m 300M (0.5 40 2N4937DCSM Dual device in CSM PNP LOC2 50m 50min 10/1m 300M 0.5 40 2N4938 Dual device in CSM PNP TO79 50m

16 3-9 2N3868JTX 2N3868SJTX 3-32 2N4907 2N3791 3-56 2N3868JTXV 2N3868SJTXV 3-32 2N4908 2N3791 3-56 2N3868SJAN 2N3868SJAN 3-32 2N4909 2N3792 3-56 2N3868SJTX 2N3868SJTX 3-32 2N4310 2N3054 3-2 2N3868STXV 2N3868SJTXV 3-32 2N4911 2N3054 3-2 2N3878 2N5428 3-101 2N4912 2N4912 3-72 2N3879 2N5430 3-101 2N4913 2N5758 3-116 2N3902 2N3902 3-60 2N4914 2N5758 3-116 2N3996 2N5339 3-97 2N4915 2N5758 3-116 2N3997 2N5339 3-97 2N4918 2N4918 3-75 2N3998 2N5339 3-97 2N4919 2N4919 3-75 2N3999 2N5339 3-97 2N4920 2N4920 3-75 2N4000 2N5339 3-97 2N4921 2N4921 3-79 2N4001 2N5339 3-97 2N4922 2N4922 3-79 2N4002 2N6274 3-168 2N4923 2N4923 3-79 2N4032 2N6274 3-168 2N4998 2N5339 3-97 2N4070 2N6306 3-181 2N4999 2N6191 3-158 2N4071 2N6306 3-181 2N5000 2N5339 3-97 2N4111 2N3715 3-26 2N5001 2N6191 3-168 2N4113 2N3716 3-26 2N5002 2N5339 3-97 2N4115 2N5339 3-97 2N5003 2N6191 3-158 2N4116 2N5339 3-97 2N5004 2N5339 3-97 2N4150 2N5337 3-97 2N5005 2N6191 3-158 2N4150JAN 2N5337JAN 3-97 2N5034 2N3055 36 2N4150JTX 2N5337JTX 3-9

2N4912 POWER TRANSISTORS(1A - 80V - 25W) 1.51 Transistors Bip... 1 of 1 Home http://store.americanmicrosemiconductor.com/2N4912.html Part Number: 2N4912 Online Store 2N4912 Diodes PO WER TRANSISTO RS( 1 A - 8 0 V - 2 5 W) Transistors Enter code INTER3 at checkout.** Integrated Circuits Optoelectronics CUSTOMER TESTIMONIALS 1) AMS had the parts that were very difficult to find! 2) Their price was very reasonable (unlike other vendors). 3) Their low free shipping threshold was much appreciated. 4) Their shopping cart was easily edited. 5) I did have some difficulty navigating the site, but that wont inhibit my shopping with AMS in the future. I would invite AMA to send me periodic updates when they make revisions to their navigation and format (with the usual ease of unsubscribing, of course). Regards, Norm Thyristors Products Search for Parts In Stock 213 Brand New Available from $ 1.51 Request a Quote 2N4912 Information Manufacturer Partnumber:

2N4912 w w w. c e n t r a l s e m i . c o m SILICON NPN POWER TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N4912 is a silicon NPN power transistor manufactured by the epitaxial base process, mounted in a hermetically sealed metal case, designed for general purpose amplifier and switching applications. MARKING: FULL PART NUMBER TO-66 CASE MAXIMUM RATINGS: (TC=25C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Continuous Base Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VCBO VCEO 80 V 5.0 V 1.0 A IB PD 1.0 A 25 W TJ, Tstg JC -65 to +200 C 7.0 C/W MAX 100 UNITS A ICEV ICEV VCE=80V, VCE=80V, ICEO IEBO VCE=40V VEB=5.0V BVCEO VCE(SAT) IC=100A IC=1.0A, IB=100mA VBE(SAT) VBE(ON) IC=1.0A, IB=100mA VCE1.0V, IC=1.0A hFE VCE=1.0V, IC=50mA VCE=1.0V, IC=500mA 40 VCE=1.0V, IC=1.0A VCE=10V, IC=250mA, f=1.0kHz 10 VCE=10V, IC=250mA, f=1.0MHz VCB=10V, IE=0, f=100kHz 3.0 hFE hfe fT Cob UNITS V VE

s l Products Se arch for Parts R e que st a Q uote Te st House s l Information Spe c She e ts Tutorials Shipping FAQ s l Company Te stim onials Store Policie s Conta ct Us Type your question here and click below ... Liv e Chat by LivePerson l l l l Submit 2N4912 Availability Buy 2N4912 at our online store ! 2N4912 Information Cate gory Transistors Class Transistors; Bipolar; Si NPN Power Type Transistors; Bipolar; Si NPN Power 2N4912 Specifications Milita ry/High-R e l : N V(BR )C EO (V) : 80 V(BR )C BO (V) : 80 I(C ) Max . (A) : 1.0 Absolute Max . Powe r Diss. (W ) : 25 Max im um O pe rating Te m p (C) : 175 I(C BO ) Max . (A) : 100u @V(C BO ) (V) (Te st C ondition) : V(C E)sat Max . (V) : @I(C ) (A) (Te st C ondition) : @I(B) (A) (Te st C ondition) : h(FE) Min. C urre nt gain. : 20 h(FE) Max . C urre nt gain. : 100 @I(C ) (A) (Te st C ondition) : 500m @V(C E) (V) (Te st C ondition) : 1.0 f(T) Min. (Hz) Transition Fre q : 3.0M @I(C ) (A) (Te st C ondition)

2N4912X MECHANICAL DATA Dimensions in mm (inches) 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. max. 3.61 (0.142) 3.86 (0.145) rad. APPLICATIONS * SCREENING OPTIONS AVAILABE 11.94 (0.470) 12.70 (0.500) 0.71 (0.028) 0.86 (0.034) 2 1 14.48 (0.570) 14.99 (0.590) 24.33 (0.958) 24.43 (0.962) NPN EPITAXIAL POWER TRANSISTOR IN TO66 HERMETIC PACKAGE * TO66 PACKAGE 1.27 (0.050) 1.91 (0.750) 4.83 (0.190) 5.33 (0.210) 9.14 (0.360) min. TO-66 Metal Package. PIN 1 = BASE PIN 2 = EMITTER CASE = COLLECTOR ABSOLUTE MAXIMUM RATINGS V(BR)CBO V(BR)CEO V(BR)EBO IC IB PD TC Tstg RqJC Semelab plc. (Tcase = 25C unless otherwise stated) 2N4910X 2N4911X 2N4912X Collector - Base Breakdown Voltage 40V 60V 80V Collector - Emitter Breakdown Voltage 40V 60V 80V Emitter - Base Breakdown Voltage 5V Continuous Collector Current 4A Base Current 1A Total Power Dissipation 25W Operating Case Temperature Range -65 to +200C Storage Temperature Range -65 to +200C Thermal Resistance , Junction To Case 7.0C/W Telephone +44(0)

2N4912 = TECHNICAL DATA NPN SILICON TRANSISTOR 1 AMPERE . . designed for driver circuits, switching, and amplifier applications. NPN SILICON This high-performance device features: POWER TRANSISTOR Low Saturation Voltage + VCE (sat) = 0.6 V max @ Ic = 1.0 Amp 80 VOLTS @ Excellent Safe Operating Area 25 WATTS Gain Specified to Ico = 1.0 Amp @ Complement to PNP 2N4900 MAXIMUM RATINGS Rating Symbol Value Unit - Collector-Emitter Voltage VcEo 80 Vde Collector-Base Voltage Ves 80 Vde Emitter-Base Voltage Ves 5.0 Vdc Collector Current Continuaus* Ic* 1.0 Ade Base Current Continuous iT} 1.0 Adc Total Device Dissipation Te = 26C Pp 25 Watts Derate above 25C 0.143 m/c i u Operating & Storage Junction Ty. Tstg -65 to +200 % Temperature Range THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Case ReJc 7.0 Sow *The 1.0 Amp maximum tg value is based upon JEDEC current gain requirements. FIGURE 1 POWER-TEMPERATURE DERATING CURVE STYLE I> PIN t.GASE 2. EMITTER CASE: COLLECTOR

2N4912 * Low Saturation Voltage Transistor In A Hermetic Metal Package * Designed For Driver Circuits, Switching and Amplifier Applications * Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25C unless otherwise stated) VCBO VCEO VEBO IC IB PD TJ Tstg Collector - Base Voltage Collector - Emitter Voltage Emitter - Base Voltage Continuous Collector Current Base Current Tc = 25C Total Power Dissipation at Derate Above 25C Junction Temperature Range Storage Temperature Range 80V 80V 5V 1.0A 1.0A 25W 0.143W/C -65 to +200C -65 to +200C THERMAL PROPERTIES Symbols Parameters RJC Thermal Resistance, Junction To Case Min. Typ. Max. Units 7 C/W Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify

3-13 2801414 TIP122 3-1098 28C897 2N5760 3-116 2SD1415 TIP120 3-1098 28C898 2N5760 3-116 28D1417 TIP100 3-1091 28901 2N6306 3-181 28D142 2N3766 3-44 2SC901A 2N6306 3-181 28D143 2N3767 3-44 28C902 MJ15001 3-710 280144 2N3767 3-44 28931 MJE3055 3-904 280146 2N4912 3-72 28C932 MJE3055 3-904 28D1465L MJD112-1 3-816 280936 2N6308 3-181 28D1465S MJD112 3-816 28C936 MJ12003 3-642 28D147 2N4912 3-72 28C937 MJ12003 3-642 250148 2N4912 3-72 28C939 MJ15001 3-710 2SD15 2N5758 3-116 28940 2N6249 3-164 28D150 2N3683 3-20 2S961 2N3055A 3-9 28D151 2N5882 3-123 28C962 2N5758 3-116 28D152 2N3583 3-20 28C981 2N5430 3-101 2SD1520L MJD6039-1 3-848 *Consult Motorola if a direct replacement is necessary.

2N4912X MECHANICAL DATA Dimensions in mm (inches) NPN EPITAXIAL POWER TRANSISTOR IN TO66 HERMETIC PACKAGE 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. max. 3.61 (0.142) 4.08(0.161) rad. FEATURES 11.94 (0.470) 12.70 (0.500) 0.71 (0.028) 0.86 (0.034) 2 1 14.48 (0.570) 14.99 (0.590) 24.13 (0.95) 24.63 (0.97) * LOW SATURATION VOTAGE * HERMETIC METAL PACKAGE * CECC SCREENING OPTIONS * SPACE QUALITY LEVELS OPTIONS * JAN LEVEL SCREENING OPTIONS 1.27 (0.050) 1.91 (0.750) 4.83 (0.190) 5.33 (0.210) 9.14 (0.360) min. APPLICATIONS * Driver Circuits * Switching * Amplifiers TO-66 (TO-213AA) Metal Package PIN 1 = BASE PIN 2 = EMITTER CASE = COLLECTOR ABSOLUTE MAXIMUM RATINGS V(BR)CBO V(BR)CEO V(BR)EBO IC IB PD TC Tstg RJC (Tcase = 25C unless otherwise stated) 2N4910X 2N4911X 2N4912X Collector - Base Breakdown Voltage 40V 60V 80V Collector - Emitter Breakdown Voltage 40V 60V 80V Emitter - Base Breakdown Voltage 5V Continuous Collector Current 1A Base Current 1A Total Power Dissipation 25W Operating