GSBAT54ST Marking: L3 Marking: L4 Absolute Maximum Ratings (TA=25C unless otherwise noted Parameter Symbol Value Unit VRRM 30 V VRWM 30 V VR 30 V IF 200 mA Repetitive Peak Forward Voltage IFRM 300 mA Non-repetitive Peak Forward Surge Current @t<1.0s IFSM 600 mA Power Dissipation PD 150 mW Thermal Resistance Junction to Ambient RJA 833 C/W Junction and Storage Temperature TJ,TSTG -65 to +150 C Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Reverse Voltage Forward Continuous Voltage 1/3 GSBAT54xT Series Schottky Diode Electrical Characteristics (TA=25C unless otherwise noted Parameter Symbol Test Conditions Min Reverse Breakdown Voltage V(BR)R IR=100A 30 Leakage Current = IR VR 25V Forward Voltage Typical Total Capacitance Reverse Recovery Time VF IF=0.1mA IF=1.0mA IF=10mA IF=30mA IF=IR=10mA,to IR=1.0mA RL=100 Typical Electrical Characteristic Curves 1/3 2/3 Unit V 2.0 = CT = VR 1.0V,f 1MHz trr Max 240 320 400 500 A mV 10 pF 5.0 ns GSBAT54xT Series Schottky Diode Package Outline Di