FBAT54SDW (2x2x0.5) unit: mm SURFACE MOUNT SCHOTTKY BARRIER DIODE ARRAYS DESCRIPTION Silicon epitaxial planar PN Junction Guard Ring for Schottky Diode 1 FEATURES z Low Forward Voltage Drop z Fast Switching APPLICATION Ultra high speed switching, rectifiers For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM, DVD-ROM, Note book PC, etc.) FBAT54SDW Marking:KL8 Maximum Ratings @TA=25 Parameter Symbol Limits Unit VRM VR 30 V Average Rectified Output Current IO 100 mA Power Dissipation PD 150 mW TJ 125 TSTG -65-125 Peak Repetitive reverse voltage DC Blocking Voltage Junction temperature Storage temperature range ELECTRICAL CHARACTERISTICSTamb=25 Parameter Reverse breakdown voltage Reverse voltage Forward Total leakage current voltage capacitance Reverse recovery time Symbol V(BR) IR VF CT t rr unless Test otherwise conditions IR= 100A VR=25V specified MIN MAX 30 V 2 IF=0.1mA 240 IF=1mA 320 IF=10mA 400 IF=30mA 500 IF=100mA 1000 VR=1V,f=1MHz IF=10mA, IR=10mA~1mA RL=100 UNIT uA mV 10 p