CBAT54S SURFACE MOUNT SILICON SCHOTTKY DIODES w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CBAT54 Series types are Silicon Schottky Diodes in an SOT-23 Surface Mount Package. SOT-23 CASE CBAT54: CBAT54A: CBAT54C: CBAT54S: SINGLE DUAL, COMMON ANODE DUAL, COMMON CATHODE DUAL, IN SERIES MAXIMUM RATINGS: (TA=25C) Continuous Reverse Voltage Continuous Forward Current Peak Repetitive Forward Current Forward Surge Current, tp=10ms Power Dissipation Operating and Storage Junction Temperature Thermal Resistance MARKING MARKING MARKING MARKING SYMBOL VR CODE: CODE: CODE: CODE: CL4 CL42 CL43 CL44 30 UNITS V IF IFRM IFSM 200 mA 300 mA 600 mA PD TJ, Tstg 350 mW -65 to +150 C JA 357 C/W ELECTRICAL CHARACTERISTICS PER DIODE: (TA=25C unless otherwise noted) SYMBOL TEST CONDITIONS MAX UNITS IR VR=25V 2.0 A VF IF=0.1mA 240 mV VF IF=1.0mA 320 mV VF IF=10mA 400 mV VF IF=30mA 500 mV VF IF=100mA 800 mV Cd VR=1.0V, f=1.0MHz IF=IR=10mA, Irr=1.0mA, RL=100 10 pF 5.0 ns trr R1 (2
CBAT54SW SURFACE MOUNT SILICON SCHOTTKY DIODES w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CBAT54W Series types are Silicon Schottky Diodes in an SOT-323 Surface Mount Package. SOT-323 CASE CBAT54W: CBAT54AW: CBAT54CW: CBAT54SW: SINGLE DUAL, COMMON ANODE DUAL, COMMON CATHODE DUAL, IN SERIES MAXIMUM RATINGS: (TA=25C) Continuous Reverse Voltage Continuous Forward Current Peak Repetitive Forward Current Forward Surge Current, tp=10ms Power Dissipation Operating and Storage Junction Temperature Thermal Resistance MARKING MARKING MARKING MARKING SYMBOL VR CODE: CODE: CODE: CODE: C4L C42 C4C C44 30 UNITS V IF IFRM IFSM 200 mA 300 mA 600 mA PD TJ, Tstg 250 mW -65 to +150 C JA 500 C/W ELECTRICAL CHARACTERISTICS PER DIODE: (TA=25C unless otherwise noted) SYMBOL TEST CONDITIONS MAX UNITS IR VR=25V 2.0 A VF IF=0.1mA 240 mV VF IF=1.0mA 320 mV VF IF=10mA 400 mV VF IF=30mA 500 mV VF IF=100mA 800 mV Cd VR=1.0V, f=1.0MHz IF=IR=10mA, Irr=1.0mA, RL=100 10 pF 5.0 ns trr
CBAT54SW TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CBAT54W Series types are Silicon Schottky Diodes in an SOT-323 Surface Mount Package. SURFACE MOUNT SILICON SCHOTTKY DIODES SOT-323 CASE CBAT54W: CBAT54AW: CBAT54CW: CBAT54SW: SINGLE DUAL, COMMON ANODE DUAL, COMMON CATHODE DUAL, IN SERIES MARKING MARKING MARKING MARKING CODE: CODE: CODE: CODE: C4L C42 C4C C44 MAXIMUM RATINGS: (TA=25C) Continuous Reverse Voltage Continuous Forward Current SYMBOL VR 30 UNITS V IF IFRM 200 mA Peak Repetitive Forward Current 300 mA Forward Surge Current, tp=10ms IFSM 600 mA PD 250 mW TJ, Tstg -65 to +150 C JA 500 C/W Power Dissipation Operating and Storage Junction Temperature Thermal Resistance ELECTRICAL CHARACTERISTICS PER DIODE: (TA=25C unless otherwise noted) SYMBOL TEST CONDITIONS MAX UNITS IR VF VR=25V IF=0.1mA IF=1.0mA 2.0 240 A mV VF VF VF VF IF=10mA IF=30mA 320 mV 400 mV 500 mV 800 mV Cd IF=100mA VR=1.0V, f=1.0 MHz 10 pF trr IF=IR=10mA, Irr=1.0mA, RL=100 5.0 ns R0 (24-Februa
CBAT54S SURFACE MOUNT SILICON SCHOTTKY DIODES w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CBAT54 Series types are Silicon Schottky Diodes in an SOT-23 Surface Mount Package. SOT-23 CASE CBAT54: CBAT54A: CBAT54C: CBAT54S: SINGLE DUAL, COMMON ANODE DUAL, COMMON CATHODE DUAL, IN SERIES MAXIMUM RATINGS: (TA=25C) Continuous Reverse Voltage Continuous Forward Current Peak Repetitive Forward Current Forward Surge Current, tp=10ms Power Dissipation Operating and Storage Junction Temperature Thermal Resistance MARKING MARKING MARKING MARKING SYMBOL VR CODE: CODE: CODE: CODE: CL4 CL42 CL43 CL44 30 UNITS V IF IFRM IFSM 200 mA 300 mA 600 mA PD TJ, Tstg 350 mW -65 to +150 C JA 357 C/W ELECTRICAL CHARACTERISTICS PER DIODE: (TA=25C unless otherwise noted) SYMBOL TEST CONDITIONS MAX UNITS IR VR=25V 2.0 A VF IF=0.1mA 240 mV VF IF=1.0mA 320 mV VF IF=10mA 400 mV VF IF=30mA 500 mV VF IF=100mA 800 mV Cd VR=1.0V, f=1.0MHz IF=IR=10mA, Irr=1.0mA, RL=100 10 pF 5.0 ns trr R1 (2
CBAT54S TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CBAT54 Series types are Silicon Schottky Diodes in an SOT-23 Surface Mount Package. SURFACE MOUNT SILICON SCHOTTKY DIODES SOT-23 CASE CBAT54: CBAT54A: CBAT54C: CBAT54S: SINGLE DUAL, COMMON ANODE DUAL, COMMON CATHODE DUAL, IN SERIES MARKING MARKING MARKING MARKING CODE: CODE: CODE: CODE: CL4 CL42 CL43 CL44 MAXIMUM RATINGS: (TA=25C) Continuous Reverse Voltage Continuous Forward Current SYMBOL VR 30 UNITS V IF IFRM 200 mA Peak Repetitive Forward Current 300 mA Forward Surge Current, tp=10ms IFSM 600 mA PD 350 mW TJ, Tstg -65 to +150 C JA 357 C/W Power Dissipation Operating and Storage Junction Temperature Thermal Resistance ELECTRICAL CHARACTERISTICS PER DIODE: (TA=25C unless otherwise noted) SYMBOL TEST CONDITIONS MAX UNITS IR VF VR=25V IF=0.1mA IF=1.0mA 2.0 240 A mV VF VF VF VF IF=10mA IF=30mA 320 mV 400 mV 500 mV 800 mV Cd IF=100mA VR=1.0V, f=1.0 MHz 10 pF trr IF=IR=10mA, Irr=1.0mA, RL=100 5.0 ns R0 (13-January 200
CBAT54S SURFACE MOUNT SILICON SCHOTTKY DIODES w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CBAT54 Series types are Silicon Schottky Diodes in an SOT-23 Surface Mount Package. SOT-23 CASE CBAT54: CBAT54A: CBAT54C: CBAT54S: SINGLE DUAL, COMMON ANODE DUAL, COMMON CATHODE DUAL, IN SERIES MAXIMUM RATINGS: (TA=25C) Continuous Reverse Voltage Continuous Forward Current Peak Repetitive Forward Current Forward Surge Current, tp=10ms Power Dissipation Operating and Storage Junction Temperature Thermal Resistance MARKING MARKING MARKING MARKING SYMBOL VR CODE: CODE: CODE: CODE: CL4 CL42 CL43 CL44 30 UNITS V IF IFRM IFSM 200 mA 300 mA 600 mA PD TJ, Tstg 350 mW -65 to +150 C JA 357 C/W ELECTRICAL CHARACTERISTICS PER DIODE: (TA=25C unless otherwise noted) SYMBOL TEST CONDITIONS MAX UNITS IR VR=25V 2.0 A VF IF=0.1mA 240 mV VF IF=1.0mA 320 mV VF IF=10mA 400 mV VF IF=30mA 500 mV VF IF=100mA 800 mV Cd VR=1.0V, f=1.0MHz IF=IR=10mA, Irr=1.0mA, RL=100 10 pF 5.0 ns trr R1 (2
page 50 : Modify PR29,PR36 from 0 ohm_0603 to 2.4 ohm_0805 to solve 48.9MHz & 105.81MHz B.B. noise. 102706 W page 51 : Change PD8,PD10 from BC000032Z09 to BC0ES3BBZ00 (from UBM32PT to ES3BB-13-F) to meet DELL PSL. 103106GC page 47 : Change PD11,PD12 from BCBAT54SZ39 to BCBAT54CZ88 to meet DELL PSL. C C 110106GC page 51 : Change PD16,PD17,PD18 from BC000715Z09 to BC70SB45Z04 to meet DELL PSL. 103106GC page 45 : Change PD2 from BC000204Z21 to BC000099034 (from CH204UPT to DA204U) to meet DELL PSL. 110106GC Page 43 : Change D10,D12,D13,D14,D15 from BCRB751SZ11 to BC000340033 to meet DELL PSL. 102706 W page 48 : Change PD9 from BC000501Z09 to BCBAT165Z08 (from CH501H-40PT to RB500V-40) to meet DELL PSL. 110106GC Page 37 : Change D27 & D28 from BC000751Z05 to BC000340033 to meet DELL PSL. 102706 W page 46 : Change PD19 from BC000501Z09 to BCBAT165Z08 (from CH501H-40PT to RB500V-40) to meet DELL PSL. B 110106GC Page 32 : 1. Ref resistor, R220 change from 6.2k to 5.9k. 2. Cap C217 for TPB0- to GND, Chan
1 SW VIN OFF ON LTC3121 VOUT RT FB VCC VC SGND PGND CVCC 4.7F CIN, CVCC: 4.7F, 6.3V, X7R, 1206 COUT2: 47F, 16V, X7R, 1206 C1: 100nF, 6.3V, X7R, 1206 COUT1: 22F, 16V, X7R, 1812 C2: 470nF, 25V, X7R, 1206 L1: COILCRAFT XAL5050-682ME U1: CENTRAL SEMICONDUCTOR CBAT54S Z1: DIODES, INC. DDZ16ASF-7 22 C1 100nF CAP PWM/SYNC RT 57.6k VOUT1 15V RC 365k CC 150pF -14.9 U1 R1 1.3M COUT1 22F R2 113k CF 10pF COUT2 47F VOUT2 -15V Z1 14.9 -14.8 14.8 -14.7 14.7 -14.6 14.6 -14.5 14.5 VOUT2 -14.4 14.4 -14.3 14.3 -14.2 14.2 -14.1 3121 TA07a 15.0 VOUT1 0 105 35 70 OUTPUT CURRENT (mA) VOUT1 (V) CIN 4.7F SD 15.1 -15.0 VOUT2 (V) VIN 5V 14.1 140 3121 TA07b 3121fa For more information www.linear.com/LTC3121 LTC3121 Typical Applications Single Li-Cell 3-LED Driver, 2.5V/4.2V to 175mA L1 3.3H 100 1.0 EFFICIENCY SW VIN CIN 4.7F SD LTC3121 PWM/SYNC FB LT1006 VC SGND PGND CVCC 4.7F CIN, CVCC: 4.7F, 6.3V, X7R, 1206 C1: 100nF, 6.3V, X7R, 1206 COUT: 22F, 16V, X7R, 1812 L1: TDK SPM6530T-3R3M D1, D2, D3: CREE XPGWHT-L1-0000-00G51 D2
.7 -14.6 14.6 -14.5 14.5 VOUT2 -14.4 14.4 -14.3 14.3 -14.2 14.2 -14.1 CIN, CVCC: 4.7F, 16V, X7R, 1206 COUT2: 47F, 25V, X7R, 1206 C1: 100nF, 16V, X7R, 1206 COUT1: 22F, 25V, X7R, 1812 C2: 470nF, 25V, X7R, 1206 L1: TDK SPM6530T-3R3M U1: CENTRAL SEMICONDUCTOR CBAT54S Z1: DIODES, INC. DDZ16ASF-7 15.0 VOUT1 -14.9 0 3122 TA06a 100 50 150 OUTPUT CURRENT (mA) VOUT1 (V) CIN 4.7F LTC3122 VOUT1 15V VOUT VOUT2 (V) VIN 15.1 -15.0 14.1 200 3122 TA06b Single Li-Cell 3-LED Driver, 2.5V/4.2V to 350mA VIN 2.5V TO 4.2V L1 3.3H VIN = 3.6V SW VIN OFF ON CIN 4.7F SD LTC3122 PWM/SYNC VOUT FB VCC VC SGND VCC CAP RT RT 57.6k D1 C1 100nF PGND CVCC 4.7F CIN, CVCC: 4.7F, 6V, X7R, 1206 C1: 100nF, 6V, X7R, 1206 COUT: 22F, 16V, X7R, 1812 L1: TDK SPM6530T-3R3M D1, D2, D3: CREE XPGWHT-L1-0000-00G51 LT1006 RC 2k CC 3.9nF + - R1 1.02M D2 COUT1 22F D3 RS 0.1 SD 5V/DIV LED CURRENT 100mA/DIV R2 30.9k 2ms/DIV 3122 TA07b 3122 TA07a 3122f 21 LTC3122 Package Description DE/UE Package 12-Lead Plastic DFN (4mm x 3mm) (Reference LTC DWG # 05
150pF U1 R1 1.3M COUT1 22F R2 113k VOUT2 -15V CF 10pF COUT2 47F Z1 CIN, CVCC: 4.7F, 6.3V, X7R, 1206 COUT2: 47F, 16V, X7R, 1206 C1: 100nF, 6.3V, X7R, 1206 COUT1: 22F, 16V, X7R, 1812 C2: 470nF, 25V, X7R, 1206 L1: TDK SPM6530T-3R3M U1: CENTRAL SEMICONDUCTOR CBAT54S Z1: DIODES, INC. DDZ16ASF-7 3122 TA06a -15.1 15.1 -15.0 15.0 VOUT1 -14.9 14.9 -14.8 14.8 -14.7 14.7 -14.6 14.6 -14.5 14.5 VOUT2 -14.4 14.4 -14.3 14.3 -14.2 14.2 -14.1 0 100 50 150 OUTPUT CURRENT (mA) VOUT1 (V) VOUT2 (V) VIN 5V C2 470nF L1 3.3H 200 14.1 3122 TA06b 3122fa For more information www.linear.com/LTC3122 21 LTC3122 Typical Applications Single Li-Cell 3-LED Driver, 2.5V/4.2V to 350mA VIN 2.5V TO 4.2V L1 3.3H SW VIN SD OFF ON CIN 4.7F LTC3122 PWM/SYNC VOUT FB VCC VC SGND PGND CVCC 4.7F D2 VCC CAP RT RT 57.6k D1 C1 100nF + - LT1006 RC 2k CC 3.9nF COUT1 22F D3 RS 0.1 R1 1.02M R2 30.9k CIN, CVCC: 4.7F, 6.3V, X7R, 1206 C1: 100nF, 6.3V, X7R, 1206 COUT: 22F, 16V, X7R, 1812 L1: TDK SPM6530T-3R3M D1, D2, D3: CREE XPGWHT-L1-0000-00G51 3122