BCW66H 45V NPN SMALL SIGNAL TRANSISTOR IN SOT23 Features Mechanical Data BVCEO > 45V Case: SOT23 IC = 800mA High Continuous Collector Current Case Material: molded plastic, "Green" molding compound Low Saturation Voltage VCE(sat) < 300mV @ 100mA UL Flammability Classification Rating 94V-0 Complementary PNP Type: BCW68H Moisture Sensitivity: Level 1 per J-STD-020 Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) Halogen and Antimony Free. "Green" Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability PPAP capable (Note 4) Terminals: Finish - Matte Tin Plated Leads, Solderable per MIL-STD-202, Method 208 Weight 0.008 grams (approximate) C SOT23 E C B B E Top View Device Symbol Top View Pin-Out Ordering Information (Notes 4 & 5) Part Number BCW66HTA BCW66HQTA Notes: Compliance AEC-Q101 Automotive Marking EH EH Reel size (inches) 7 7 Tape width (mm) 8 8 Quantity per reel 3,000 3,000 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65
BCW66H BCW66F ... BCW66H Surface Mount General Purpose Si-Epi-Planar Transistors Si-Epi-Planar Universaltransistoren fur die Oberflachenmontage NPN NPN Version 2006-07-31 Power dissipation - Verlustleistung 2.9 1.1 0.1 0.4 Plastic case Kunststoffgehause 1 1.30.1 2.5 max 3 Type Code 250 mW 2 1.9 Dimensions - Mae [mm] 1=B 2=E 3=C SOT-23 (TO-236) Weight approx. - Gewicht ca. 0.01 g Plastic material has UL classification 94V-0 Gehausematerial UL94V-0 klassifiziert Standard packaging taped and reeled Standard Lieferform gegurtet auf Rolle Maximum ratings (TA = 25C) Grenzwerte (TA = 25C) BCW66F ... BCW66H Collector-Emitter-volt. - Kollektor-Emitter-Spannung B open VCEO 45 V Collector-Base-voltage - Kollektor-Basis-Spannung E open VCBO 75 V Collector-Base-voltage - Kollektor-Basis-Spannung C open VEB0 5V Power dissipation - Verlustleistung Ptot 250 mW 1) Collector current - Kollektorstrom (dc) IC 800 mA Peak Collector current - Kollektor-Spitzenstrom ICM 1000 mA Peak Base curre
BCW66H BCW65 BCW66 ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). PARAMETER Collector-Emitter Breakdown Voltage SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. BCW65 BCW66 V(BR)CEO 32 45 V ICEO=10mA ICEO=10mA BCW65 BCW66 V(BR)CES 60 75 V IC=10A IC=10A 5 V IEBO =10A 20 20 nA A VCES = 32V VCES = 32V ,Tamb=150oC 20 20 A nA VCES = 45V VCES = 45V ,Tamb=150oC 20 nA VEBO =4V Emitter-Base Breakdown Voltage V(BR)EBO Collector-Emitter Cut-off Current ICES BCW65 BCW66 Emitter-Base Cut-Off Current IEBO Collector-Emitter Saturation Voltage VCE(sat) Base-Emitter Saturation Voltage Static Forward Current Transfer BCW65 BCW66 SOT23 NPN SILICON PLANAR MEDIUM POWER TRANSISTORS VBE(SAT) BCW65A hFE BCW66F 35 75 100 35 BCW65B hFE BCW66G 50 110 160 60 BCW65C hFE BCW66H 80 180 250 100 Transition Frequency fT Collector-Base Capacitance Ccbo Emitter-Base Capacitance Cebo Noise Figure N Switching times: Turn-On Time Turn-Off Time ton toff 160 250 350 0.3 V 0.7 V IC=100mA, IB =10mA IC= 500mA, IB =5
cation 4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VCEO collector-emitter voltage open base - - 45 V IC collector current - - 800 mA ICM peak collector current - - 1 A BCW66F 100 - 250 BCW66G 160 - 400 BCW66H 250 - 600 hFE [1] DC current gain pulsed: tp 300 s, 0.02 single pulse; tp 1 ms VCE = 1 V; IC = 100 mA; Tamb = 25 C [1] BCW66 series Nexperia 45 V, 800 mA NPN general-purpose transistor 5 Pinning information Table 2. Pinning Pin Symbol Description 1 B base 2 E emitter 3 C collector Simplified outline Graphic symbol 3 C B E 1 6 2 sym123 Ordering information Table 3. Ordering information Type number BCW66F Package Name Description Version TO-236AB plastic surface-mounted package; 3 leads SOT23 BCW66G BCW66H 7 Marking Table 4. Marking Type number Marking code BCW66F [1] EQ% BCW66G [1] ER% BCW66H [1] ES% [1] % = placeholder for manufacturing site code 8 Limiting values Table 5. Limiting values In accordance with the A
BCW66H BCW65 BCW66 ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). PARAMETER Collector-Emitter Breakdown Voltage SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. BCW65 BCW66 V(BR)CEO 32 45 V ICEO=10mA ICEO=10mA BCW65 BCW66 V(BR)CES 60 75 V IC=10A IC=10A 5 V IEBO =10A 20 20 nA A VCES = 32V VCES = 32V ,Tamb=150oC 20 20 A nA VCES = 45V VCES = 45V ,Tamb=150oC 20 nA VEBO =4V Emitter-Base Breakdown Voltage V(BR)EBO Collector-Emitter Cut-off Current ICES BCW65 BCW66 Emitter-Base Cut-Off Current IEBO Collector-Emitter Saturation Voltage VCE(sat) Base-Emitter Saturation Voltage Static Forward Current Transfer BCW65 BCW66 SOT23 NPN SILICON PLANAR MEDIUM POWER TRANSISTORS VBE(SAT) BCW65A hFE BCW66F 35 75 100 35 BCW65B hFE BCW66G 50 110 160 60 BCW65C hFE BCW66H 80 180 250 100 Transition Frequency fT Collector-Base Capacitance Ccbo Emitter-Base Capacitance Cebo Noise Figure N Switching times: Turn-On Time Turn-Off Time ton toff 160 250 350 0.3 V 0.7 V IC=100mA, IB =10mA IC= 500mA, IB =5
BCW66H BCW66F ... BCW66H Surface Mount General Purpose Si-Epi-Planar Transistors Si-Epi-Planar Universaltransistoren fur die Oberflachenmontage NPN NPN Version 2006-07-31 Power dissipation - Verlustleistung 1.1 2.9 0.1 0.4 Plastic case Kunststoffgehause 1 1.30.1 2.5 max 3 Type Code 250 mW 2 1.9 Dimensions - Mae [mm] 1=B 2=E 3=C SOT-23 (TO-236) Weight approx. - Gewicht ca. 0.01 g Plastic material has UL classification 94V-0 Gehausematerial UL94V-0 klassifiziert Standard packaging taped and reeled Standard Lieferform gegurtet auf Rolle Maximum ratings (TA = 25C) Grenzwerte (TA = 25C) BCW66F ... BCW66H Collector-Emitter-volt. - Kollektor-Emitter-Spannung B open VCEO 45 V Collector-Base-voltage - Kollektor-Basis-Spannung E open VCBO 75 V Collector-Base-voltage - Kollektor-Basis-Spannung C open VEB0 5V Power dissipation - Verlustleistung Ptot 250 mW 1) Collector current - Kollektorstrom (dc) IC 800 mA Peak Collector current - Kollektor-Spitzenstrom ICM 1000 mA Peak Base curre
Collector-Emitter Saturation Voltage VCE(sat) Base-Emitter Saturation Voltage Static Forward Current Transfer BCW65 BCW66 SOT23 NPN SILICON PLANAR MEDIUM POWER TRANSISTORS VBE(SAT) BCW65A hFE BCW66F 35 75 100 35 BCW65B hFE BCW66G 50 110 160 60 BCW65C hFE BCW66H 80 180 250 100 Transition Frequency fT Collector-Base Capacitance Ccbo Emitter-Base Capacitance Cebo Noise Figure N Switching times: Turn-On Time Turn-Off Time ton toff 160 250 350 0.3 V 0.7 V IC=100mA, IB =10mA IC= 500mA, IB =50mA* 2 IC=500mA, IB=50mA* V ISSUE 3 - AUGUST 1995 PARTMARKING DETAILS BCW65A EA BCW65B EB BCW65C EC BCW66F EF BCW66G EG BCW66H EH BCW65AR BCW65BR BCW65CR BCW66FR BCW66GR BCW66HR 4V 5V 6V 7P 5T 7M COMPLEMENTARY TYPES BCW65 BCW67 BCW66 BCW68 SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL BCW65 BCW66 UNIT Collector-Base Voltage VCBO 60 75 V Collector-Emitter Voltage VCEO 32 45 V Emitter-Base Voltage VEBO 5 V Continuous Collector Current IC 800 mA 250 VCE =10V VCE = 1V VCE = 1V* VCE = 2V* Pe
06 SIEM 2xSHD 7A 7A 7B MMBR901LT1 MMBR901LT3 MMBR920LT2 MOT MOT MOT NPN NPN NPN 7D 7D MMBR931LT1 HD4A MOT ZETEX NPN 2xSHD 7E 7G FMMTA42R MMBR5031LT1 ZETEX MOT NPN NPN 7H 7H 7J 7M MMBR5179LT1 KST5179 FMMT38C MMBR521LT1 MOT SAMS ZETEX MOT NPN NPN NPN NPN 7M BCW66HR ZETEX NPN 7N MMBR941BLT1 MOT NPN 7N MMBR941BLT1 MOT NPN 7N BCW68HR ZETEX PNP 7P MMBR911BLT1 MOT NPN 7P BCW66HR ZETEX NPN 7T BCW68FR ZETEX PNP 7X MMBR571LT1 MOT NPN 7Y MMBR941LT1 MOT NPN 7Y MMBR941LT3 MOT NPN 7Z MMBR951LT1 MOT NPN 81A TMPZ5250 ALLEG DZ 81A PMBZ5250B PHIL DZ 81B TMPZ5251 ALLEG DZ 81B PMBZ5251B PHIL DZ 81C TMPZ5252 ALLEG DZ 81C PMBZ5252B PHIL DZ 81D TMPZ5253 ALLEG DZ 81D PMBZ5253B PHIL DZ 81E TMPZ5254 ALLEG DZ 81E PMBZ5254B PHIL DZ 81F TMPZ5255 ALLEG DZ 81F PMBZ5255B PHIL DZ 75p VR<70B; IF<70MA;VF(IF =1MA)<410B; CD<2; 1 A1 VR<70B; IF<70MA;VF(IF =15MA)<1.0B; IR<0.1; CD<2.0; VR<70B; IF<200MA;VF(IF =15MA)<1.0B; IR<0.1; CD<2.0; tRR<5 VR<70B; IF<70MA;VF(IF =1MA)<410B; CD<2; A1 VR<70B; IF<70MA;VF(IF =15MA)<1.0B; IR<0
BCW66H SOT23 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR ISSUE 4 - MARCH 2001 PARTMARKING DETAILS - BCW66F - EF BCW66G - EG BCW66H - EH BCW66FR - BCW66GR - BCW66HR - BCW66 7P 5T 7M E C B COMPLEMENTARY TYPE - BCW68 SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage V CBO 75 V Collector-Emitter Voltage V CEO 45 V Emitter-Base Voltage V EBO 5 V Continuous Collector Current IC 800 mA Peak Collector Current(10ms) I CM 1000 mA Base Current IB 100 mA 330 mW -55 to +150 C Power Dissipation at T amb=25C P tot Operating and Storage Temperature Range T j:T stg TBA Not Recommended for New Design Please Use BCW66H BCW66 ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). PARAMETER SYMBOL MIN. Collector-Emitter Breakdown Voltage V (BR)CEO 45 V I CEO=10mA V (BR)CES 75 V IC=10 A Emitter-Base Breakdown Voltage V (BR)EBO 5 V I EBO =10 A Collector-Emitter Cut-off Current I CES 20 20 nA A V CES = 45V VCES = 45V , Tamb=150C Emitter-
ANSISTOR Top VIEW [] @ Designed for low-frequency driver stage and switching | applications. | LJ 7) B E MAXIMUM RATINGS Device Marking Rating Symbol Value Unit BCW66F EF Collector-Emitter Voltage VocEo 45 Vdc BCW66G. EG Collector-Base Voltage Vogo 75 Vde BCW66H EH Emitter-Base Voltage Ves 5.0 Vde Collector Current Io 800 mAdc ELECTRICAL CHARACTERISTICS (T, = 25C unless otherwise noted) Parameter Test Conditions Min Typ Max Unit BV ceo Io = 10 mAdc, lp =0 45 _ ~ Vde BVepo | Ie = 10 pAde, lh = 0 5.0 Vde BV ces lo = 10 pAde, Ves =0 75 _ _ Vde Ices Voce = 45 Vde, Io =0 _ _ 20 nAdc Voce = 45 Vde, Io = 0, Ta = 150C _ _ 20 pAdc lego Ves = 40 Vde, Io =0 20 nAdc hee Io = 100 pAde, Voce = 1.0 Vdc . BCW66F 35 _ _ _ BCW66G 50 _ BCW66H 80 _ _ Io = 10 mAde, Voge = 1.0 Vde BCW66F 75 _ BCW66G 110 _ BCW66H 180 _ _ Ig = 100 mAdc, Vog = 1.0 Vde BCW66F 100 250 BCW66G 160 400 BCW66H 250 630 Io = 500 mAde, Voge = 2.0 Vde BCW66F 35 BCW66G 60 _ _ BCW66H 100 Veeean Io
BCW66H - EH BCW66FR - BCW66GR - BCW66HR - BCW66 7P 5T 7M E C B COMPLEMENTARY TYPE - BCW68 SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage V CBO 75 V Collector-Emitter Voltage V CEO 45 V Emitter-Base Voltage V EBO 5 V Continuous Collector Current IC 800 mA Peak Collector Current(10ms) I CM 1000 mA Base Current IB 100 mA 330 mW -55 to +150 C Power Dissipation at T amb=25C P tot Operating and Storage Temperature Range T j:T stg TBA BCW66 ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). PARAMETER SYMBOL MIN. Collector-Emitter Breakdown Voltage V (BR)CEO 45 V I CEO=10mA V (BR)CES 75 V IC=10 A Emitter-Base Breakdown Voltage V (BR)EBO 5 V I EBO =10 A Collector-Emitter Cut-off Current I CES 20 20 nA A V CES = 45V VCES = 45V , Tamb=150C Emitter-Base Cut-Off Current I EBO 20 nA V EBO =4V Collector-Emitter Saturation Voltage V CE(sat) 0.3 V 0.7 V IC=100mA, IB = 10mA IC= 500mA, IB = 50mA* Base-Emitter Saturation Voltage V BE(sat) 2 IC=500mA,
BCW66H - EH BCW66FR - BCW66GR - BCW66HR - BCW66 7P 5T 7M E C B COMPLEMENTARY TYPE - BCW68 SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage V CBO 75 V Collector-Emitter Voltage V CEO 45 V Emitter-Base Voltage V EBO 5 V Continuous Collector Current IC 800 mA Peak Collector Current(10ms) I CM 1000 mA Base Current IB 100 mA Power Dissipation at T amb=25C P tot 330 mW Operating and Storage Temperature Range T j:T stg -55 to +150 C TBA BCW66 ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). PARAMETER SYMBOL MIN. Collector-Emitter Breakdown Voltage V (BR)CEO 45 V I CEO=10mA V (BR)CES 75 V IC=10 A Emitter-Base Breakdown Voltage V (BR)EBO 5 V I EBO =10 A Collector-Emitter Cut-off Current I CES 20 20 nA A V CES = 45V VCES = 45V , Tamb=150C Emitter-Base Cut-Off Current I EBO 20 nA V EBO =4V Collector-Emitter Saturation Voltage V CE(sat) 0.3 V 0.7 V IC=100mA, IB = 10mA IC= 500mA, IB = 50mA* Base-Emitter Saturation Voltage V BE(sat) 2 IC=500mA,
RANSISTOR top VIEW [] Designed for low-frequency driver stage and switching | applications. | LI LI B E MAXIMUM RATINGS : Device Marking Rating Symbol Value Unit BCW66F EF Collector-Emitter Voltage Voce 45 Vde BCW66G. EG Collector-Base Voltage Veso 75 Vde BCW66H EH Emitter-Base Voltage Ves 5.0 Vde Collector Current Is 800 mAdc ELECTRICAL CHARACTERISTICS (T, = 25C unless otherwise noted) Parameter Test Conditions Min Typ Max | Unit BV ceo Io = 10 mAde, lp =0 45 _ _ Vde BVeao | le = 10 pAde, Ip = 0 5.0 _ | Vde BV ces lo = 10 wAdc, Vep =0 75 _ _ Vde logs Voge = 45 Vde, Ip = 0 _ - 20 nAde Vee = 45 Vde, Io = 0, Ty = 150C _ 20 pAdc lego Ves = 4.0 Vde, lo =0 _ _ 20 nAdc hee Io = 100 pAde, Vog = 1.0 Vde - BCW66F 35 _ _ _ BCW66G 50 _ BCW66H 80 _ _ Io = 10 mAde, Vog = 1.0 Vde BCW66F 75 _ _ BCW66G | 110 _~ _ BCW66H 180 _ _ Ig = 100 mAde, Veg = 1.0 Vde BCWE66F 100 _ 250 BCW66G | 160 _ 400 BCWE66H | 250 _ 630 Ig = 500 mAdc, Vog = 2.0 Vde BCW66F 35 _ BCW66G 60 _ _ BCW66H
BCW66H - EH BCW66HF - 7M TYPES BCW65 - BCW67 BCW66 - BCW68 ABSOLUTE MAXIMUM RATINGS Collector-Base BCW65 BCW66 vCBO 60 75 --. `CEO 32 45 ---- v Voltage Voltage Voltage Continuous Collector Peak Collector Current Current(l ------ Ores) Dissipation Operating at T,mb=250C and Storage Temperature Range UNIT v v `" v 5 .--. - EBO Ic 800 `CM Base Current Power f SOT23 SYMBOL Emitter-Base ( - PARAMETER ----..--- ..-- Collector-Emitter I 4V BCW66F - COMPLEMENTARY I - .. ----- .-- 1000 mA mA IB 100 mA P101 330 mW ------- ~Tj:T=g 3-27 ! -55 to +150 `" ---- "c BCW65 BCW66 ;LECTRICAL CHARACTERISTICS (at Tal b= 25C unless othenvise stated). MIN. TYP. MAX. UNIT CONDITIONS. 32 $5 v ;cE&lOmA ~E&lOmA V(B~)m~ 30 75 v lc=lo@ l~loyA 5 v IEBO=lOKA 20 20 nA pA Vc-s= 32V VcEs. 32V ,Tti.lEO% I 20 20 nA @ VCES= 45V VcE~. 45V ,T@.150W Iho 20 nA VEBO=4V 0,3 0.7 v v &loomA. la.lomA 1~ 5C0rnA. la.50MA* 2 v lc=500mA, la=50mA" Breakdown Voltage 3 BCW65 BCW66 Emitter-Bese Breakdown Voltage -" BCW66 Emitter-Base Cut
I=100mA, Vcog=1V transfer 35 - - Ic = 500mA, Veg = 2V +i ratio hee 50; | Ig= 100pA, Veg = 10V BCW658 110 - Ic =10MA, Vcp=1V BCW66G 160 | 250 | 400 Ig =100mA, Vog=1V 60 _- _ le = 500mA, Vee =2V Hee 80 le = 100A, Voge = 10V BCW65C 180 _ _ Ic = 10MA, Vop=1V BCW66H 250 | 350 | 630 lc=100mA, Vcge=1V 100 - - Io = 500mA, Veg = 2V Transition frequency fr 100 - - MHz | le=20mA, Vee= 10V f = 100MHz Collector-base Cobo - 8 12 pF Vego = 10V, f= 1 MHz capacitance Emitter-base capacitance] C,,, - - 80 pF Vego = 0.5V, f=1MHz Noise figure N 2 10 dB I; =0.2mMA, Veg =5V R, = 1k, f= 1kHz Af = 200Hz Switching times _ Turn-on time ton - _ 100 ns om 50 mA 5mA Turn-off time tort - 400 ns R= 560 BCW65A BCW65B BCW65C BCW66F BCW66G BCW66H BCW65AR BCW65BR BCW65CR BCW66FR BCW66GR BCW66HR Devices are identified by a code on the body of the device 115