2N956 ONTI8A ] CASE 22-03, STYLE 1 Rating Symbol | 2N956 | 2N1711| Unit TO-18 (TO-206AA) Collector-Emitter Voltage VCER 50 Vdc 3 2 4 3c c Collector-Base Voltage VcBo 75 Vde wonecrer Emitter-Base Voltage VEBO 7.0 i Vde 2 Total Device Dissipation @ Ta = 25C PD 500 800 mw Base Derate above 25C 2.86 4.57 mW" Total Device Dissipation t@ Tc = 25C Pp 18 3.0 Watts 1 Emitter Derate above 25C 10.3 17.15 mW C Operating and Storage Junction Ty. Tstg 65 to +200 *c 2N1 71 1 Temperature Range | CASE 79-04, STYLE 1 THERMAL CHARACTERISTICS TO-39 (TO-205AD) 2N718A GENERAL PURPOSE Characteristic Symbol 2N956 2N1711 Unit TRANSISTORS Thermal Resistance, Junction to Ambient | Rya 350 58 CW Thermal Resistance, Junction to Case Reic 97 219 C.-W NPN SILICON Refer to 2N3019 for graphs. ELECTRICAL CHARACTERISTICS (Ta = 25C unless atherwise nated.} Characteristic Symbol Min | Typ Max | Unit | OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage VCER(sus} 50 _ _ Vde | {lc = 100 mAde, pulsed; Rpg

779B| G| P| 2N964 | 8-74 | HSS} 150M | A] loo} 15 15 | S| 50{ 200] 10M | 0.125] om 320M | 7 2n780 | $| N{ 2N2220| 8-108 | AFA] 1.0W | C] 175] 45 45 35] 140] 500* 1.0{ 10M 60M | T 1-110 Switching and General Purpose Transistors an7 18Asiticon) Veen = 50 rv 2N956 f; = 300 MHz Typ 2N1613 QNI711 (JAN 2N1613 AND 2N1711 Available) CASE 22 CASE 31 (TO-18) (TO-5) 2N718A 2N1613 2N956 2N1711 Collector connected to case NPN silicon annular Star transistors for high-speed switching and DC to UHF amplifier applications. MAXIMUM RATINGS . 2N718A 2N1613 : Rating Symbol N96 ONITLI Unit Collector-Emitter Voltage VoER 50 Vde Collector-Base Voltage Yop 15 Vde Emitter-Base Voltage Ves 7.0 Vde Total Device Dissipation @ Ta = 25C Pp 500 800 mW Derate above 25C 2.86 4.57 mWw/C Total Device Dissipation @ To = 25C Py 1.8 3.0 Watts Derate above 25C 10.3 17.1 mW/C Operating and Storage Junction Temperature Range Ty Tete -65 to +200 C 8-30 Switching and General Purpose Transistors 2N718A, 2N956, 2N

O. 2N492 2N492A 2N492B 2N493 2N493A 2N493B 2N497 2N498 2N541 2N542 2N543 2N656 2N657 2N696 2N697 2N698 2N699 2N717 2N718 2N718A 2N719 2N719A 2N720 2N720A 2N721 2N722 2N730 2N731 2N849 2N850 2N851 2N852 2N870 2N871 2N910 2N911 2N912 2N917 2N918 2N929 2N930 2N956 2N997 2N998 2N999 2N1047 2N1047A 2N1047B 2N1048 2N1048A SEC.-PAGE 4-20 4-20 4-20 4-20 4-20 4-20 POWER POWER * * * POWER POWER 4-23 4-23 4-25 4-25 4-27 4-27 4-27 4-31 4-31 4-31 4-31 4-34 4-34 4-36 4-36 4-38 4-38 4-40 4-40 4-42 4-42 4-44 4-44 4-44 4-46 4-48 4-52 4-52 4-54 4-56 4-57 4-59 POWER POWER POWER POWER POWER TYPE NO. SEC.-PAGE 2N1048B POWER 2N1049 . . . . POWER 2N1049A . . . . POWER 2N1049B POWER 2N1050 POWER 2N1050A POWER 2N1050B POWER 2N113t . 4-61 2N1132 4-61 2N1149 4-63 2N1150 4-63 2N1151 463 2N1152 4-63 2N1153 4-63 2N1154 4-65 2N1155 4-65 2N1156 4-65 2N1276 * 2N1277 * 2N1278 * 2N1279 * 2N1420 4-68 2N1507 4-68 2N1566 4-70 2N1586 * 2N1587 * 2N1588 . 2... * anissg 2 www. 2N1590 * 2N1591 * 2N1592 . 2N1593 * 2N1594 * 2N1595 POWER 2N1

N2221 8-108 | RFA 0O.3W JA [175 20 10 |90 20 7120 10M 0.5 10M 300M | T 2N990 GiP RFC 67M LA 75 20 20 ;R 40 1.QM 40 E 44m | T 2N991 GiP RFC 67M A 75 20 20 |R 40 L.0M 40 E 44M 1, T 1-112 Switching and General Purpose Transistors an7 18Asiticon) Veen = 50 rv 2N956 f; = 300 MHz Typ 2N1613 QNI711 (JAN 2N1613 AND 2N1711 Available) CASE 22 CASE 31 (TO-18) (TO-5) 2N718A 2N1613 2N956 2N1711 Collector connected to case NPN silicon annular Star transistors for high-speed switching and DC to UHF amplifier applications. MAXIMUM RATINGS . 2N718A 2N1613 : Rating Symbol N96 ONITLI Unit Collector-Emitter Voltage VoER 50 Vde Collector-Base Voltage Yop 15 Vde Emitter-Base Voltage Ves 7.0 Vde Total Device Dissipation @ Ta = 25C Pp 500 800 mW Derate above 25C 2.86 4.57 mWw/C Total Device Dissipation @ To = 25C Py 1.8 3.0 Watts Derate above 25C 10.3 17.1 mW/C Operating and Storage Junction Temperature Range Ty Tete -65 to +200 C 8-30 Switching and General Purpose Transistors 2N718A, 2N956, 2N

|A |] 85 34 70 |E 2N1639 G| P } 2N3325 9-71 | RFC 80M | A 85 34 40 ]/E 2N1640 1S | P cup | 250M ]A | 160 30 20 | u | 6.0 100* 2NL641 |S | P CHP | 250M {A | 160 30 10 |u { lo 100% 1-120 Switching and General Purpose Transistors an7 18Asiticon) Veen = 50 rv 2N956 f; = 300 MHz Typ 2N1613 QNI711 (JAN 2N1613 AND 2N1711 Available) CASE 22 CASE 31 (TO-18) (TO-5) 2N718A 2N1613 2N956 2N1711 Collector connected to case NPN silicon annular Star transistors for high-speed switching and DC to UHF amplifier applications. MAXIMUM RATINGS . 2N718A 2N1613 : Rating Symbol N96 ONITLI Unit Collector-Emitter Voltage VoER 50 Vde Collector-Base Voltage Yop 15 Vde Emitter-Base Voltage Ves 7.0 Vde Total Device Dissipation @ Ta = 25C Pp 500 800 mW Derate above 25C 2.86 4.57 mWw/C Total Device Dissipation @ To = 25C Py 1.8 3.0 Watts Derate above 25C 10.3 17.1 mW/C Operating and Storage Junction Temperature Range Ty Tete -65 to +200 C 8-30 Switching and General Purpose Transistors 2N718A, 2N956, 2N

2N956 ON718A CASE 22-03, STYLE 1 Rating Symbol | 2N956 | 2N1711| Unit TO-18 (TO-206AA) Collector-Emitter Voltage VcER 50 Vde . 3 Collector Collector-Base Voltage Veso 7 Vde Emitter-Base Voltage VEBO 70 Vde 3 Total Device Dissipation @ Ta = 25C Pp 500 800 mw Base Derate above 25C 2.86 4.57 mWwPrc Total Device Dissipation @ Tc = 25C Pp 1.8 3.0 Watts 1 Emitter Derate above 25C _. 10.3 17.15 | mWwPrc Operating and Storage Junction TJ. Tstg 65 to +200 C 2N 1 71 1 Temperature Range CASE 79-04, STYLE 1 . os 3 THERMAL CHARACTERISTICS _ a __.| 10-39 (TO-205AD) fy 2N718A GENERAL PURPOSE Characteristic Symbol | 2N956 2N1711 Unit TRANSISTORS Thermai Resistance, Junction to Ambient Raja 350 58 CAV Thermal Resistance, Junction to Case ReJc 97 219 C/W NPN SILICON Refer to 2N3019 for graphs. ELECTRICAL CHARACTERISTICS (Ta = 25C unless otherwise noted.) nim ae - | - Characteristic - | Symbol. | Min Typ Max | Unit | _ OFF CHARACTERISTICS ae ; wet ee - - Coliector-Emitter Breakdown Voltage

20/8 20 1.0M 100M [M 2N1729 G|P MSS 150M |A 85 25 15 |X 30 100M 0.35 200M 2N1730 GIN MSS 150M |A 85 20 15 |X 30 100M | 0.35 200M 2N1731 G|P AFA 150M jA 85 30 30 |X 40 10M 5.0M |B 1-121 Switching and General Purpose Transistors an7 18Asiticon) Veen = 50 rv 2N956 f; = 300 MHz Typ 2N1613 QNI711 (JAN 2N1613 AND 2N1711 Available) CASE 22 CASE 31 (TO-18) (TO-5) 2N718A 2N1613 2N956 2N1711 Collector connected to case NPN silicon annular Star transistors for high-speed switching and DC to UHF amplifier applications. MAXIMUM RATINGS . 2N718A 2N1613 : Rating Symbol N96 ONITLI Unit Collector-Emitter Voltage VoER 50 Vde Collector-Base Voltage Yop 15 Vde Emitter-Base Voltage Ves 7.0 Vde Total Device Dissipation @ Ta = 25C Pp 500 800 mW Derate above 25C 2.86 4.57 mWw/C Total Device Dissipation @ To = 25C Py 1.8 3.0 Watts Derate above 25C 10.3 17.1 mW/C Operating and Storage Junction Temperature Range Ty Tete -65 to +200 C 8-30 Switching and General Purpose Transistors 2N718A, 2N956, 2N

2N956 QNTIBA CASE 22-03, STYLE 1 Rating Symbol | 2N956 | 2N1711| Unit TO-18 (TO-206AA) Coliector-Emitter Voltage VCER 50 Vde 3 24, 3 Collector Collector-Base Voltage VcBo 75 Vdc Emitter-Base Voltage VEBO 7.0 Vdc 2 Total Device Dissipation @ Ta = 26C 500 800 mw Base Oerate above 26C 2.86 4.57 mWweC Total Device Dissipation @ Tc = 25C 18 3.0 Watts 1 Emitter Derate above 25C 10.3 17,15 mwec Operating and Storage Junction TJ. Tstg 65 to +200 C 2N 1 71 1 Temperature Range CASE 79-04, STYLE 1 = - 3 THERMAL CHARACTERISTICS TO-39 (TO-205AD) 2" 2N718A GENERAL PURPOSE Characteristic Symbol} 2N956 2N1711 Unit TRANSISTORS Thermal Resistance, Junction to Ambient | Raja 350 58 C AW Thermal Resistance, Junction to Case Rec 97 219 cw NPN SILICON Refer to 2N3019 for graphs. ELECTRICAL CHARACTERISTICS (Ta = 25C unless otherwise noted.) Characteristic Symbol Min Typ I Max Unit OFF CHARACTERISTICS Coltector-Emitter Breakdown Voltage VCER(sus) 50 _- _ Vdc {Ic = 100 mAdc, pulsed; Rae =< 10 oh

2N956 ~ G S=THONSON AMPLIFIERS AND SWITCHES DESCRIPTION The 2N718A and 2N956 are silicon planar epitaxial NPN transistors in Jedec TO-18 metal case, inten- ded for high-speed switching and amplifier applica- tions. TO-18 INTERNAL SCHEMATIC DIAGRAM Cc B NPN S oN4T E ABSOLUTE MAXIMUM RATINGS Symbol! Parameter Value Unit Vcso Collector-base Voltage (Ig = 0) 75 Vv Vcer Collector-emitier Voltage (Ree < 10 Q) 50 Vv VEBO Emitterbase Voltage (Ic = 0) 7 Vv le Collector Current 1 A Piat Total Power Dissipation at Tamp < 25 C 0.5 WwW at Tease S 25 C 18 Ww Tstg, 1) | Storage and Junction Temperature 65 to 200 C October 1988 18 269 an7isa-2nose S_& S~THONSON ern 30E D mm 7929237 0031088 4 co {-36-1 THERMAL DATA Rth j-case | Thermal Resistance Junction-case Max 97 c Rihj-amb | Thermal Resistance Junction-ambient Max 350 CiW ELECTRICAL CHARACTERISTICS (Tamp = 25 unless otherwise specified) Symbol! Parameter Test Conditions Min. Typ. Max. Unit loBo Collector Cutoff Current Vop =60V 10 nA (fle =0) Vo

2N956, 2Ni476. Zhiy 2 INIBO? N-P-N SILICON 2neid 24 BULLETIN NO. DL-S 693471, MAY 1963 REVISED AUGUST 1969 Highly Reliable, Versatile Devices Designed for Amplifier, Switching and Oscillator Applications from <0.1 ma to >150 ma, de to 30 me * High Voltage *mechanical data * Low Leakage Useful h;; Over Wide Current Range Device types 2N717, 2N718, 2N718A, 2N730, 2N731, and 2N956 are in JEDEC TO-18 packages. Device types 2N696, 2N697, 2N1420, 2N1507, 2N1613, and 2N1711 are in JEDEC TO-5 packages. 2 anne BS oun a 10") Fs cousctoe i eos +) pow fs x peas ae rn ed TA = o aos i t 09 - a8 0.280 rs ous sand 2 liam *= es tetans oF OUTUNE 3 uaDs cow oa TO-18 THE COLLECTOR IS IN ELECTRICAL CONTACT WITH THE CASE TO-5 TO-18 TO-5 *absolute maximum ratings at 25C free-air temperature (unless otherwise noted) BNG9 | 2N71Z | 2N710A |2N730 | nose [2N1420lanieia [2NI711 | UNIT Collector-Base Voltage 60 60 75 60 7 60 75 75 v Collector-Emitter Voltage (See Note 1) | 40 40 50 40 50 30 50 50 v Collector-Emi

2N956, 281420. 2N1507, 2N1G13, ZNi711 N-P-N SILICON TRANSISTORS BULLETIN NO. DL-S 693471, MAY 1963-REVISED AUGUST 1969 Highly Reliable, Versatile Devices Designed for Amplifier, Switching and Oscillator Applications from <0.1 ma to >150 ma, de to 30 me * High Voltage + Low Leakage Useful h,, Over Wide Current Range *mechanical data Device types 2N717, 2N718, 2N718A, 2N730, 2N731, and 2N956 are in JEDEC TO-18 packages. Device types 2N696, 2N697, 2N1420, 2N1507, 2N1613, and 2N1711 are in JEDEC TO-5 packages. a uaes ws | oem] Ts couscroe ue oem bes ee fa x zoe Re sh TINS ea ma Oe 44 pores] ae res eo | 1 OerTeR im ORTARS OF OUTUNE 9 ans 221 oa TO-18 THE COLLECTOR IS IN ELECTRICAL CONTACT WITH THE CASE TO-5 10-18 TO-5 Sa | *absolute maximum ratings at 25C free-air temperature (unless otherwise noted) Rees | aria | 2N7T8A |2N730 | nose |2N1820 antera (aNt7it | UNIT Collector-Base Voltage 60 60 75 60 75 60 75 75 v Collector-Emitter Voltage (See Note 1} 40 40 50 40 50 30 50 50 v Collector-Em

2N956 General purpose transistor 8.00 Transistors Transistors Bipolar Si NPN Low-Pow... Page 1 of 1 Enter Your Part # Home Part Number: 2N956 Online Store 2N956 Diodes General purpose transistor Transistors Enter code INTER3 at checkout.** Integrated Circuits Optoelectronics Thyristors Products Search for Parts In Stock 1910 Brand New Available from $ 8.00 Request a Quote Information Manufacturer Partnumber: 2N956 Spec Sheets List Price: $ 10.00 Tutorials Shipping FAQs Our Price: $ 8.00 You Save: $ 2.00 Company Testimonials Americanmicrosemi Total Price $ 8.00 Store Policies Contact Us Quantity to Order: 1 SHOP WITH CONFIDENCE All Parts are Brand New! 100% Secure, SSL Encryption! Ships in 1-2 business days FREE UPS GROUND SHIPPING US48 Submit CUSTOMER TESTIMONIALS 1) AMS had the parts that were very difficult to find! 2) Their price was very reasonable (unlike other vendors). 3) Their low free shipping threshold was much appreciated. 4) Their shopping cart w

able, Versatile Devices Designed for Amplifier, Switching and Oscillator Applications from <0.1 ma to >150 ma, de to 30 me * High Voltage *mechanical data * Low Leakage Useful h; Over Wide Current Range Device types 2N717, 2N718, 2N718A, 2N730, 2N731, and 2N956 are in JEDEC TO-18 packages. Device types 2N696, 2N697, 2N1420, 2N1507, 2N1613, and 2N1711 are in JEDEC TO-5 packages. + ugaes 299% oun - 1s man piso 3 couscroa =) cn em |_max i x wal IK TORS 7 v = ren 0.200 / rs oon Lege. ] Zs bom 1 EAUTTER wma eet Ta wae Sf om TO-18 THE COLLECTOR IS IN ELECTRICAL CONTACT WITH THE CASE TO-5 TO-18 TO-5 *tabsolute maximum ratings at 25C free-air temperature (unless otherwise noted) 2N696 | N71 |2N718A |2N730 | onose [21820 oniei3 |2NI711 | UNIT Coltector-Basa Voltage 60 60 75 60 75 60 75 75 Collector-Emitter Voltage (See Note 1) 40 40 50 40 50 30 50 50 v Collector-Emitter Voltage (See Note 2) 32 v Emitter-Base Voltage 5 5 7 5 7 5 7 7 v Collector Current 1.0 1.0 1.0 a Total Devica Dissipation at (or below) 0

MHz 0.36W 300MHz 0.31W 300MHz 0.36W 40MHz 0.36W 40MHz 0.36W 40MHz 0.36W 40MHz 0.36W 100MHz 0.5W 100MHz 0.5W 150MHz 0.5W 150MHz 0.5W 540MHz 0.03W 0.36W 0.36W 50MHz 0.5W 100MHz 0.36W 100MHz 0.36W 100MHz 0.36W 250MHz 0.36W 250MHz 0.36W 30MHz 0.3W 2N930-JQR-B 2N956 2S103 2S104 2S104L BC107 BC107A BC107B BC108 BC108A BC108B BC108C BC109 BC109B BC109C BC178 BC377 BC378 BC393 BC394 BC477 BC477A BC477B BC477RB BC478 BC478A BC478B PRODUCT 2N2917CECC PRODUCT 2N6277 2N6277A 2N6282 2N6283 2N6284 2N6285 2N6286 2N6287 2N6302 2N6306 2N6307 2N6308 2N6338CECC 2N6338X 2N6339ACECC 2N6339CECC 2N6339X 2N6339XCECC 2N6340 2N6340CECC 2N6340X 2N6341 2N6341CECC 2N6341X 2N6383 2N6384 2N6385 NPN TO18 (TO206AA) TO18 (TO206AA) NPN TO18 (TO206AA) NPN TO18 (TO206AA) NPN TO18L NPN TO18 (TO206AA) NPN TO18 (TO206AA) NPN TO18 (TO206AA) NPN TO18 (TO206AA) NPN TO18 (TO206AA) NPN TO18 (TO206AA) NPN TO18 (TO206AA) NPN TO18 (TO206AA) NPN TO18 (TO206AA) NPN TO18 (TO206AA) PNP TO18 (TO206AA) NPN TO18 (TO206AA) NPN TO18 (TO206AA) PNP TO18

e, Versatile Devices Designed for Amplifier, Switching and Oscillator Applications from <0.1 ma to >150 ma, de fo 30 me *mechanical data * High Voltage * Low Leakage * Useful hy, Over Wide Current Range Device types 2N717, 2N718, 2N718A, 2N730, 2N731, and 2N956 are in JEDEC TO-18 packages. Device types 2N696, 2N697, 2N1420, 2N1507, 2N1613, and 2N1711 are in JEDEC TO-5 packages. oe Ls aN 1 3 couecTon of CT (BS 0970 oss Lerma exes . Md . ee E ree 6.100 mn peer 9178) a.a00 ra pase base Stat | | warren Sew ecetans SOF OUTUNE 3 waps 22 nets en TO-18 THE COLLECTOR JS IN ELECTRICAL CONTACT WITH THE CASE TO-5 70-18 TO-5 absolute maximum ratings at 25C free-air temperature (unless otherwise noted) ae | a7 TZ | 2N7I8A |2N730 | angse [2N1420 loniess |2ni711 | UNIT Collector-Basa Voltage 60 60 75 60 75 60 75 75 v Collector-Emitter Volfage (See Note 1) 40 40 50 40 50 30 50 50 v Cotlector-Emitter Voltage (See Note 2) 32 v Emitter-Base Voltage 5 5 7 5 7 5 7 7 Collector Current 10 1.0 1.0 a Total Device Dissipat