ontinued) Switches and Choppers NPN PNP RDS(on) Max Ciss pF Max Crss pF Max VGSS VGDO Volts Min Min Max Min VGS(off) Volts IDSS mA Max ton ns Max toff ns Max Package Page J112 - 50 28 5.0 35 1.0 5.0 5.0 - - - MPF4392 - 60 10 3.5 30 - - 25 75 15 35 425 776 2N5639 - 60 10 4.0 30 - 25 - - - 90 MPF4393 - 100 10 3.5 30 - 5.0 30 15 55 776 J110 - 18 - - 25 0.5 4.0 10 - - - 2N5555 - 150 5.0 1.2 25 - - 15 - 5.0 15 2N5638 - 30 10 4.0 30 - - 50 - 4.0 5.0 J111 - 30 28 5.0 35 3.0 10 20 - - - J113 - 100 28 5.0 35 0.5 3.0 2.0 - - - MPF4856 - 25 18 8.0 40 4.0 10 50 - 6.0 25 MMBF4391LT1 - 30 10 3.5 30 4.0 10 50 150 - - MMBF4392LT1 - 60 10 3.5 30 2.0 5.0 25 75 - - MMBF4393LT1 - 100 10 3.5 30 0.5 3.0 5.0 30 - - - MMBFJ175LT1 125 11 5.5 30 3.0 6.0 7.0 60 - - - MMBFJ177LT1 300 - - 30 0.8 2.5 1.5 20 - - 8.0 (Typ) 12 (Typ) Devices listed in bold italic are ON Semiconductor preferred devices. http://onsemi.com 22 TO-226AA, O 6 , TO-92 O 9 C Case 29-11 Page 1100 TO-236AB, SOT-23 Case 318-08 318 08 Page 1101 422 85 90 425
2N5639 2N5638 is a Preferred Device JFET Chopper Transistors N-Channel - Depletion N-Channel Junction Field Effect Transistors, depletion mode (Type A) designed for chopper and high-speed switching applications. Features http://onsemi.com * Low Drain-Source "ON" Resistance: RDS(on) = 30W for 2N5638 RDS(on) = 60W for 2N5639 1 DRAIN * Low Reverse Transfer Capacitance - Crss = 4.0 pF (Max) @ f = 1.0 MHz * Fast Switching Characteristics - tr = 5.0 ns (Max) (2N5638) * Pb-Free Packages are Available* 3 GATE MAXIMUM RATINGS Rating Symbol Value Unit Drain -Source Voltage VDS 30 Vdc Drain -Gate Voltage VDG 30 Vdc Reverse Gate -Source Voltage VGSR 30 Vdc Forward Gate Current IGF 10 mAdc Total Device Dissipation @ TA = 25C Derate above 25C PD 310 2.82 mW mW/C Storage Temperature Range Tstg -65 to +150 C Operating Junction Temp Range TJ -65 to +135 C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Opera
2N5639 2N5638 is a Preferred Device JFET Chopper Transistors N-Channel - Depletion N-Channel Junction Field Effect Transistors, depletion mode (Type A) designed for chopper and high-speed switching applications. http://onsemi.com * Low Drain-Source "ON" Resistance: * * RDS(on) = 30 for 2N5638 RDS(on) = 60 for 2N5639 Low Reverse Transfer Capacitance Crss = 4.0 pF (Max) @ f = 1.0 MHz Fast Switching Characteristics tr = 5.0 ns (Max) (2N5638) 1 DRAIN 3 GATE 2 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain-Source Voltage VDS 30 Vdc Drain-Gate Voltage VDG 30 Vdc Reverse Gate-Source Voltage VGSR 30 Vdc Forward Gate Current IGF 10 mAdc Total Device Dissipation PD @ TA = 25C Derate above 25C 310 2.82 mW mW/C Storage Temperature Range Tstg -65 to +150 C Operating Junction Temp Range TJ -65 to +135 C TO-92 CASE 29 STYLE 5 1 2 3 MARKING DIAGRAMS 2N 5638 YWW Y WW VDD = 10 Vdc V RL DD (RDS(on) 50) ID 50 PULSE GENERATOR INPUT (SCOPE A) tf 90% VGS(off) Device TO + - 50 OHM 0.001 F SCOPE B 50
ontinued) Switches and Choppers NPN PNP RDS(on) Max Ciss pF Max Crss pF Max VGSS VGDO Volts Min Min Max Min VGS(off) Volts IDSS mA Max ton ns Max toff ns Max Package Page J112 - 50 28 5.0 35 1.0 5.0 5.0 - - - MPF4392 - 60 10 3.5 30 - - 25 75 15 35 425 776 2N5639 - 60 10 4.0 30 - 25 - - - 90 MPF4393 - 100 10 3.5 30 - 5.0 30 15 55 776 J110 - 18 - - 25 0.5 4.0 10 - - - 2N5555 - 150 5.0 1.2 25 - - 15 - 5.0 15 2N5638 - 30 10 4.0 30 - - 50 - 4.0 5.0 J111 - 30 28 5.0 35 3.0 10 20 - - - J113 - 100 28 5.0 35 0.5 3.0 2.0 - - - MPF4856 - 25 18 8.0 40 4.0 10 50 - 6.0 25 MMBF4391LT1 - 30 10 3.5 30 4.0 10 50 150 - - MMBF4392LT1 - 60 10 3.5 30 2.0 5.0 25 75 - - MMBF4393LT1 - 100 10 3.5 30 0.5 3.0 5.0 30 - - - MMBFJ175LT1 125 11 5.5 30 3.0 6.0 7.0 60 - - - MMBFJ177LT1 300 - - 30 0.8 2.5 1.5 20 - - 8.0 (Typ) 12 (Typ) Devices listed in bold italic are ON Semiconductor preferred devices. http://onsemi.com 22 TO-226AA, O 6 , TO-92 O 9 C Case 29-11 Page 1100 TO-236AB, SOT-23 Case 318-08 318 08 Page 1101 422 85 90 425
BRIGSS 30 _ Vde (ig = 10 wAde, Vpsg = 0) Gate Reverse Current Igss (Vag = 15 Vde, Vog = 0) ~~ 1.0 nAde \Vgg = 15 Vdc, Vpg = 0, Ta = 100C) 1.0 pAdc Drain Cutoff Current \Dtoft) (Vpg = 15 Vde, Vgg = ~12 Vdc} 2N5638 _ 1.0 nAdc (Vpg = 15 Vde, VGgg = ~8.0 Vde) 2N5639 _ 1.0 (Vps = 15 Vde, Vgg = - 6.0 Vdc) 2N5640 1.0 (Vpg = 15 Vde. Vag = ~12 Vde, Ta = 100C) 2N5638 1.0 pAdc (Vos = 15 Vde, Vgg = 8.0 Vdc, Ta = 100C) 2N5639 _ 1.0 (Vpg = 18 Vde, Vag = -6.0 Vde, Ta = 100C) 2N5640 | _ 1.0 ON CHARACTERISTICS Zero-Gate-Voltage Drain Current(1) Ipss mAdc \Vpg = 20 Vdc, Vgg = 0) 2N5638 50 ~ 2N5639 25 2N5640 50 _ Drain-Source On-Voltage VDSton) | Vde {lp = 12 mAde, Vgg = 0) 2N5638 too 0.5 lip = 6.0 mAdc, Vag = 0) 2N5639 | 05 {Ip = 3.0 mAdc, Vgg = 0) 2N5640 _ 0.5 Static Drain-Source On Resistance 'DS(on) Ohms {Ip = 1.0 mAdc, Vgg = 0) 2N5638 _ 30 2N5639 _ 60 2N5640 | _ 100 SMALL-SIGNAL CHARACTERISTICS Static Drain-Source ON Resistance Tds(on) Ohms (Vgs = 0, Ip = 0,
2N5639 2N5638 is a Preferred Device JFET Chopper Transistors N-Channel - Depletion N-Channel Junction Field Effect Transistors, depletion mode (Type A) designed for chopper and high-speed switching applications. http://onsemi.com * Low Drain-Source "ON" Resistance: * * RDS(on) = 30 for 2N5638 RDS(on) = 60 for 2N5639 Low Reverse Transfer Capacitance Crss = 4.0 pF (Max) @ f = 1.0 MHz Fast Switching Characteristics tr = 5.0 ns (Max) (2N5638) 1 DRAIN 3 GATE 2 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain-Source Voltage VDS 30 Vdc Drain-Gate Voltage VDG 30 Vdc VGSR 30 Vdc Forward Gate Current IGF 10 mAdc Total Device Dissipation PD Reverse Gate-Source Voltage @ TA = 25C Derate above 25C Storage Temperature Range 310 2.82 mW mW/C Tstg -65 to +150 C TJ -65 to +135 C Operating Junction Temp Range TO-92 CASE 29 STYLE 5 1 2 3 MARKING DIAGRAMS 2N 5638 YWW Y WW VDD = 10 Vdc V RL DD (RDS(on) 50) ID 50 PULSE GENERATOR INPUT (SCOPE A) tf 90% VGS(off) Device TO + - 50 OHM 0.001 F SCOPE B 50
ontinued) Switches and Choppers NPN PNP RDS(on) Max Ciss pF Max Crss pF Max VGSS VGDO Volts Min Min Max Min VGS(off) Volts IDSS mA Max ton ns Max toff ns Max Package Page J112 - 50 28 5.0 35 1.0 5.0 5.0 - - - MPF4392 - 60 10 3.5 30 - - 25 75 15 35 425 776 2N5639 - 60 10 4.0 30 - 25 - - - 90 MPF4393 - 100 10 3.5 30 - 5.0 30 15 55 776 J110 - 18 - - 25 0.5 4.0 10 - - - 2N5555 - 150 5.0 1.2 25 - - 15 - 5.0 15 2N5638 - 30 10 4.0 30 - - 50 - 4.0 5.0 J111 - 30 28 5.0 35 3.0 10 20 - - - J113 - 100 28 5.0 35 0.5 3.0 2.0 - - - MPF4856 - 25 18 8.0 40 4.0 10 50 - 6.0 25 MMBF4391LT1 - 30 10 3.5 30 4.0 10 50 150 - - MMBF4392LT1 - 60 10 3.5 30 2.0 5.0 25 75 - - MMBF4393LT1 - 100 10 3.5 30 0.5 3.0 5.0 30 - - - MMBFJ175LT1 125 11 5.5 30 3.0 6.0 7.0 60 - - - MMBFJ177LT1 300 - - 30 0.8 2.5 1.5 20 - - 8.0 (Typ) 12 (Typ) Devices listed in bold italic are ON Semiconductor preferred devices. http://onsemi.com 22 TO-226AA, O 6 , TO-92 O 9 C Case 29-11 Page 1100 TO-236AB, SOT-23 Case 318-08 318 08 Page 1101 422 85 90 425
e V(BR)GSS 30 _ Vde (Ig = 10 pAdc, Vpg = 0) Gate Reverse Current Iass (Vas = 15 Vde, Vpg = 0) _ 1.0 nAdc (Vgg = 15 Vde, Vos = 0, Ta = 100C) _ 1.0 pAde Drain Cutoff Current ID(off) (Vpg = 15 Vde, Veg = ~12 Vde) 2N5638 1.0 nAde (Vps = 18 Vdc, Vag = 8.0 Vde) 2N5639 ~ 1.0 (Vpg = 18 Vde, Vg = 6.0 Vde) 2N5640 - 1.0 (Vps = 16 Vde, Vag = 12 Vde, Ta = 100C) 2N5638 - 1.0 pAdc (Vpg = 16 Vde, Vag = 8.0 Vdc, Ta = 100C) 2N5639 _ 1.0 (Vps = 15 Vdc, Vag = 6.0 Vde, Ta = 100C) 2N5640 _- 1.0 ON CHARACTERISTICS Zero-Gate-Voltage Drain Current(1} loss mAde (Vps = 20 Vde, Vgg = 0) 2N5638 50 _ 2N5639 26 _ 2N5640 5.0 - Drain-Source On-Voltage VpS{on} Vde (Ip = 12 mAde, Vgg = 0} 2N5638 _ 0.5 lIp = 6.0 mAdc, Vgg = 0) 2N5639 - 0.5 (Ip = 3.0 mAde, Vgg = 0) 2N5640 =- 05 Static Drain-Source On Resistance TDS(on) Ohms (Ip = 1.0 mAde, Vgg = 0) 2N5638 _ 30 2N5639 _- 60 2N5640 _ 100 SMALL-SIGNAL CHARACTERISTICS Static Drain-Source ON Resistance Tds(on) Ohms (Vg6s = 0, Ip = 0, f
)) ") N-Channel - Depletion N-Channel Junction Field Effect Transistors, depletion mode (Type A) designed for chopper and high-speed switching applications. http://onsemi.com * Low Drain-Source "ON" Resistance: * * RDS(on) = 30 for 2N5638 RDS(on) = 60 for 2N5639 Low Reverse Transfer Capacitance Crss = 4.0 pF (Max) @ f = 1.0 MHz Fast Switching Characteristics tr = 5.0 ns (Max) (2N5638) MAXIMUM RATINGS Rating Symbol Value Unit Drain -Source Voltage VDS 30 Vdc Drain -Gate Voltage VDG 30 Vdc VGSR 30 Vdc Forward Gate Current IGF 10 mAdc Total Device Dissipation PD 310 2.82 mW mW/C Tstg -65 to +150 C TJ -65 to +135 C Reverse Gate -Source Voltage @ TA = 25C Derate above 25C Storage Temperature Range Operating Junction Temp Range 1 2 TO-92 CASE 29 STYLE 5 3 MARKING DIAGRAMS 2N 5638 YWW Y WW VDD = 10 Vdc V RL + DD * (RDS(on) ) 50) ID 50 PULSE GENERATOR INPUT (SCOPE A) 10% 90% td(on) tf td(off) 90% RL Device TO + - 50 OHM 0.001 F SCOPE B tr 50 Ohms 1.0 k 50 TO 50 OHM SCOPE A 10% OUTPUT (SCOPE B) 50 = Year
40 5-3 2N5266 P JFET 2N2608 2N5566 ON JFET 2N5566 3-40 5-3 2N5267 P JFET 2N2608 2N5592 N JFET 2N3822 2N5268 P JFET 2N2608 2N5593 N JFET 2N3822 2N5269 P JFET 2N3331 2N5594 N JFET 2N3822 2N5270 P JFET 2N3331 2N5638 N JFET 2N5638 4-5 5-3 2N5358 N JPET 2N3686 2N5639 N JFET 2N5639 45 5-3 2N5359 N JFET 2N3686 2N5640 N JFET 2N5640 4-5 5-3 2N5360 N JFET 2N3685 2N5647 N JFET 2N4117A 2N5361 N JFET 2N3684 2N5648 N JFET 2N4117A 2N5362 N JFET 2N3684 2N5649 N JFET 2N4117A 2N5363 N JFET 2N4222A 2N5653 N JFET 2N5653 4-6 5-3 2N5364 N JFET 2N4224 2N5654 N JFET 2N5654 4-6 5-3 2N5391 N JFET 2N4867A 2N5668 N JFET 2N5668 4-7 5-8 2N5392 N JFET 2N4868A 2N5669 N JFET 2N5669 4-7 5-8 2N5393 N JFET 2N4869A 2N5670 N JFET 2N5670 4-7 5-8 2N5394 N JFET 2N4869A 2N5797 P JFET 2N2608 2N5395 N JFET 2N4869A 2N5798 P JFET 2N2608 2N5396 N JFET 2N4869A 2N5799 P JFET 2N2608 2N5397 N JFET U310 2N5800 P JFET 2N2608 2N5398 N JFET U312 2N5801 N JFET 2N4393 2N5432 N JFET 2N5432 3-35 5-10 2N5802 N JFET 2N4393 2N5433 N JFET 2N5433
2N5639 2N5640 I N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTORS . . . depletion mode (Type A) Junction Field-Effect designed for chopper and high-speed switching @ Low Drain-Source "ON" rds(o") = Resistance Transistors applications. -- 30 Ohms (2 N5638) 60 Ohms (2 N5639) 100 Ohms (2 N5640) @ Low "Reverse Transfer Crss= 4.0 pF (Max) MAXIMUM 0 Capacitance @f= -- 1.0 MHz RATINGS Rating Drain-Source * Forward Symbol Vnc Voltaae * Reverse Gate-Source *Total Voltage v&~:,.l \;$. ....,!:(.? 1 $/<.~,s/ .. I1 OPeratin~J~nction Tem~erature R~ge%'"' ,$,.., Tstg -65 to+150 Oc T.I -65 to+135 Oc U.Ulb 0.019 OIA HOLE(TYP) `4 + OUTPUT * 10% LJI u I ,,. ,... *ELECTRICAL ,... ... CHARACTERISTICS (TA = 25C ., unless otherwise noted) Characteristic Symbol Min Max Unit V(
cement No. Mfr. Replacement No. Mfr. Replacement No. Mfr. 2N5602 (Cont'd) 2N5629 2N5638-18 (Cont'd) 2N5640 (Cont'd) 2N5646 (Cont'd) 2N5660 (Cont'd) 2N5430 3 MOTA DE284 1 DGE 2N5638 3 SIX PN4117-18 3 NSC DE364 1 DGE 2N6233 1 MOTA D44H11 3 GESY 2N3773 a RCA 2N5639 PN4118-18 3 NSC MRF653 1 MOTA D44T2 1 GESY DE384 3 OGE 2N4348 a RCA BSV79 1 PHIN PN4119-18 a NSC 2N6288 3 RCA 2N3583 a RCA 2N5604 2N5630 THJ5639 1 SPR PN4393-18 3a NSC BD239 3 RCA O44TE3 3 GESY 2N5430 1 MOTA 2N6530 1 GESY TIS74 1 IFC SIX BU407 3 APX DE286 3a OGE 2N6500 1 RCA DE284 1 DGE TMPF5639 1 SPR PN4416 a SIX ST44C1 3 STI DE384 a DGE DE175 1 DGE 2N9773 3 RCA 2N3460 3 IFC $X3819 a Til 2N5647 SDT4904 3 SOD O44H11 3 GESY 2N4348 3 RCA 2N3685 a INL THJ5951 a SPR 2N4117A + INL 2N5661 2N5606 BD647 3 APX 2N3686 a INL THJ5952 3 SPR Six 2N6079 1 RCA 2N3879 1 RCA DE263 3 DGE 2N3687 3 INL THJ5953 3 SPR 2n5648 D44T4 1 GESY 2N5428 1 MOTA DE280 a DGE 2N3821 3 IFC TIS58 3 TH 2N4117A 1 INL 2N6235 3 MOTA D44C8 1 GESY RCA3773 a RCA NSC TIS59 3 Ti Six D
to +135C Storage Temperature Range ~65 to +150C PIN CHIP CONFIGURATION TOPOGRAPHY TO-92 5001B tors :oman 7 or [pore SUBSTRATE IS GATE NS T ow 9122 023 0127 RL 0085, 0036 0035 0026 ota | ow ORDERING INFORMATION TO-92 WAFER DICE 2N5638 | 2N5638/W | 2N5638/D 2N5639 | 2N5639/W | 2N5638/D 2N5640 | 2N5640/W | 2N5640/D ELECTRICAL CHARACTERISTICS (25C unless otherwise noted) 2N5640 CHARACTERISTIC MAX | MIN Reverse - IGss Gate Reverse Current 'Diotf) Drain Cutoff Current VDSion) Drain-Source ON Voltage Common-Source Reverse Transfer NOTE: 1. Pulse test PW < 300 us, duty cycle < 3.0%. Vv Ri * =e -lrpston) +50) ineut (SCOPE A} 10% Vasion) 90% __f ----- Vastott) wnt a} dion) U7 ro tdtoft) 90% % ouTPUT 10% (SCOPE B) 1-88 UNIT TEST CONDITIONS MAX VGs=-15 V, Vps = 0 1 Vps= V6S =~ ~8 V (2N5639), Vos = -6V 6 mA (2N5639), Ip = 3 mA (2N5640} VGs = -12 V, Vips = 0 VGS{on) = 0 ID(on) = 6 mA (2N5639) VGS{off) = -10V ED{on) = 3 mA (2N5640) = 500 Voo =10VOC OT pF o TO
3 DGE IVN201HNH IT122 1 INL TP3460 3 SPR TIS73 3 IFC 2N5953-18 3a NSC J304 3 SIX VN1001A + SIX MP310 3 MPS TP4338 3 SPR ITE4092 SIX J304-18 3 NSC BUZ25 3 SIEG ITE2915 ITE3068 MPF4092 + MOTA BFW12 2 PHIN J305-18 3 NSC IRF132 3 FSC IT120 + INL 2N3687 1 INL 2N5639 3 MOTA DE459 a DGE J306 a SIX GESY MP312 3 MPS 2N4338 1+ NSC PN4092 3 NSC J202 3 INL J309 a SIX MOTA ITE2916 2N5639 1 MOTA PN4092-18 3 NSC J305 3 SIX MPF4393 a MOTA MTM12N10 a MOTA T7120 + INL 201-18 1 SIX PN4392-18 3 SIX $X3819 3 Til PN4416 a NSC SDT20 a SODI MP312 3 MPS 2N3460 3 IFC TIS74 3 IFC THJ4340 3 SPR THJ4416 3 SPR ZVNO209M a FERB ITE2917 2N4341 3 SIX ITE4093 THJ5486 3 SPR THJ5245 3 SPR ZVNO210M 3 FERB IT122 1 INL BFW13 3 PHIN MPF4093 1 MOTA THJ5953 3 SPR TMPF4416 3 SPR ZVN1109M a FERB MP310 3 MPS BSV79 3 PHIN 2N5640 3 MOTA TIS58 3 Til TMPF5245 3 SPR IVN6OOCNS ITE2918 DE312 3 OGE PN4093 3 NSC TMPF4340 3 SPR TP4416 3 SPR IRF722 1 INR IT122 + INL J201 3 INL PN4093-18 3 NSC TMPF5486 3 SPR TP5245 3 SPR 2SK309 3 HITJ MP31
1 DGE 2N5458 3 MOTA THJ3459 3 SPR THJ5461 3 SPR GES6017 a GESY D45c8 1 GESY THC4314 1 SPR 2N5459 3 MOTA THJ3460 3 SPR TMPF3994 3 SPR THC3799 3 SPR DE128 1 DGE TP4314 1 SPR 2N5486 sa MOTA THJ5358 3 SPR TMPF5461 a SPR TP3799 3 SPR 2N6107 3 RCA BDi40 3 PHIN 2N5639 3 MOTA THJ5359 3 SPR TP3994 a SPR 2N4360 2N6317 3 MOTA BFxX39 a SGSI 2N5640 a MOTA TMPF3369 3 SPR 2N4343 2N5460 1 INL BD240A a RCA BFX40 3 SGSI 2N6449 a IFC TMPF3459 3 SPR 2N3993 + IFC A5T5462 1 1FC D45C5 3 GESY D40D7 3 GESY 2N6450 3 IFC FMPF3460 3 SPR 2N4342 1 MOTA DE326 1 DGE DE218 3 DGE Da3c8 3 GESY BFW11 3 PHIN TMPF5358 3a SPR 2N5462 1 INL PN4360-18 1 NSC SDT3576 3 SOD THC3868 a SPR BFW12 3 PHIN TMPF5359 3a SPR 2N3386 a SIX SIX SDT3702 a SOD 2N4318 DE459 a DGE TP3369 3 SPR 2N3994 3 IFC 2N5462 3 [NL SDT3704 a SOD 2N2608 3 INL J201 a MOTA TP3459 3 SPR 2N5116 3 NSC MOTA SDT3707 a $0D SIX J201-18 a SIX TP3460 3 SPR SIX NSC SDT3708 3 SOD 2N4338 PN3686-18 3 NSC TP5358 a SPR 2N5461 a INL SIX $DT3710 a SOD 2N3460 1 IFC THJ3369 3 SPR TP5359 a