MMIX1T550N055T2
550 A, 55 V, 0.0013 ohm, N-CHANNEL, Si, POWER, MOSFET

From Zilog

StatusACTIVE
Avalanche Energy Rating (Eas)3000 mJ
Case ConnectionISOLATED
Channel TypeN-CHANNEL
ConfigurationSINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min55 V
Drain Current-Max (ID)550 A
Drain-source On Resistance-Max0.0013 ohm
FET TechnologyMETAL-OXIDE SEMICONDUCTOR
Mfr Package DescriptionPLASTIC PACKAGE-21
Number of Elements1
Number of Terminals21
Operating ModeENHANCEMENT
Package Body MaterialPLASTIC/EPOXY
Package ShapeRECTANGULAR
Package StyleSMALL OUTLINE
Pulsed Drain Current-Max (IDM)2000 A
Surface MountYes
Terminal FormGULL WING
Terminal PositionDUAL
Transistor ApplicationSWITCHING
Transistor Element MaterialSILICON
Transistor TypeGENERAL PURPOSE POWER

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