IXTY02N120P
0.2 A, 1200 V, 0.075 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252

From Zilog

StatusACTIVE
Avalanche Energy Rating (Eas)40 mJ
Case ConnectionDRAIN
Channel TypeN-CHANNEL
ConfigurationSINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min1200 V
Drain Current-Max (ID)0.2000 A
Drain-source On Resistance-Max0.0750 ohm
EU RoHS CompliantYes
FET TechnologyMETAL-OXIDE SEMICONDUCTOR
Lead FreeYes
Mfr Package DescriptionPLASTIC PACKAGE-3
Number of Elements1
Number of Terminals2
Operating ModeENHANCEMENT
Package Body MaterialPLASTIC/EPOXY
Package ShapeRECTANGULAR
Package StyleSMALL OUTLINE
Pulsed Drain Current-Max (IDM)0.6000 A
Surface MountYes
Terminal FinishPURE TIN
Terminal FormGULL WING
Terminal PositionSINGLE
Transistor ApplicationSWITCHING
Transistor Element MaterialSILICON
Transistor TypeGENERAL PURPOSE POWER

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