IXTA80N10T7
80 A, 100 V, 0.014 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263

From Zilog

StatusACTIVE
Avalanche Energy Rating (Eas)400 mJ
Case ConnectionDRAIN
Channel TypeN-CHANNEL
ConfigurationSINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min100 V
Drain Current-Max (ID)80 A
Drain-source On Resistance-Max0.0140 ohm
EU RoHS CompliantYes
FET TechnologyMETAL-OXIDE SEMICONDUCTOR
Lead FreeYes
Mfr Package DescriptionTO-263, 7 PIN
Number of Elements1
Number of Terminals6
Operating ModeENHANCEMENT
Package Body MaterialPLASTIC/EPOXY
Package ShapeRECTANGULAR
Package StyleSMALL OUTLINE
Pulsed Drain Current-Max (IDM)220 A
Surface MountYes
Terminal FinishPURE TIN
Terminal FormGULL WING
Terminal PositionSINGLE
Transistor ApplicationSWITCHING
Transistor Element MaterialSILICON
Transistor TypeGENERAL PURPOSE POWER

External links