IRFD9120PBF
MOSFET, Power; P-Ch; VDSS -100V; RDS(ON) 0.6Ohm; ID -1A; HD-1; PD 1.3W; VGS +/-20V; -55d

From Vishay PCS

CategoryPower MOSFET
Channel ModeEnhancement
Channel TypeP
ConfigurationSingle
Dimensions6.29 x 5 x 3.37 mm
Forward Diode Voltage-6.3 V
Forward Transconductance0.71 S
Height3.37 mm
Length6.29 mm
Maximum Continuous Drain Current-0.7 A
Maximum Drain Source Resistance0.6 Ω
Maximum Drain Source Voltage-100 V
Maximum Gate Source Voltage±20 V
Maximum Operating Temperature+175 °C
Maximum Power Dissipation1.3 W
Minimum Operating Temperature-55 °C
Mounting TypeThrough Hole
Number of Elements per Chip1
Operating Temperature Range-55 to +175 °C
Package TypeHVMDIP
Pin Count4
Typical Gate Charge @ VgsMaximum of 18 nC @ -10 V
Typical Input Capacitance @ Vds390 pF @ -25 V
Typical Turn On Delay Time9.6 ns
Typical TurnOff Delay Time21 ns
Width5 mm

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