IRFD210PBF
MOSFET, Power; N-Ch; VDSS 200V; RDS(ON) 1.5 Ohms; ID 0.6A; HD-1; PD 1W; VGS +/-20V; VF 2

From Vishay PCS

CategoryPower MOSFET
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Dimensions6.29 x 5 x 3.37 mm
Forward Diode Voltage2 V
Forward Transconductance0.1 S
Height3.37 mm
Length6.29 mm
Maximum Continuous Drain Current0.6 A
Maximum Drain Source Resistance1.5 Ω
Maximum Drain Source Voltage200 V
Maximum Gate Source Voltage±20 V
Maximum Operating Temperature+150 °C
Maximum Power Dissipation1 W
Minimum Operating Temperature-55 °C
Mounting TypeThrough Hole
Number of Elements per Chip1
Operating Temperature Range-55 to +150 °C
Package TypeHVMDIP
Pin Count4
Typical Gate Charge @ VgsMaximum of 8.2 nC @ 10 V
Typical Input Capacitance @ Vds140 pF @ 25 V
Typical Turn On Delay Time8.2 ns
Typical TurnOff Delay Time14 ns
Width5 mm

External links