VS-1N3767 DIODE GEN PURP 900V 35A DO203AB
From Vishay Semiconductor Diodes Division
Capacitance @ Vr, F | - |
Category | Discrete Semiconductor Products |
Current - Average Rectified (Io) | 35A |
Current - Reverse Leakage @ Vr | 3mA @ 900V |
Datasheets | 1N1183(A)/3765/2128A Series |
Diode Type | Standard |
Family | Diodes, Rectifiers - Single |
Mounting Type | Chassis, Stud Mount |
Operating Temperature - Junction | -65°C ~ 190°C |
Other Names | *1N3767 1N3767 1N3767-ND |
Package / Case | DO-203AB, DO-5, Stud |
Packaging | Bulk |
Product Photos | DO-5 Pkg |
Reverse Recovery Time (trr) | - |
Series | - |
Speed | Standard Recovery >500ns, > 200mA (Io) |
Standard Package | 100 |
Supplier Device Package | DO-203AB |
Voltage - DC Reverse (Vr) (Max) | 900V |
Voltage - Forward (Vf) (Max) @ If | 1.8V @ 110A |