RGF1MHE3/67A DIODE GEN PURP 1KV 1A DO214BA
From Vishay Semiconductor Diodes Division
Capacitance @ Vr, F | 8.5pF @ 4V, 1MHz |
Category | Discrete Semiconductor Products |
Current - Average Rectified (Io) | 1A |
Current - Reverse Leakage @ Vr | 5µA @ 1000V |
Datasheets | RGF1A thru RGF1M Packaging Information |
Diode Type | Standard |
Family | Diodes, Rectifiers - Single |
Mounting Type | Surface Mount |
Operating Temperature - Junction | -65°C ~ 175°C |
Package / Case | DO-214BA |
Packaging | Tape & Reel (TR) |
Product Photos | DO-214BA |
Reverse Recovery Time (trr) | 500ns |
Series | SUPERECTIFIER® |
Speed | Fast Recovery = 200mA (Io) |
Standard Package | 1,500 |
Supplier Device Package | DO-214BA (GF1) |
Voltage - DC Reverse (Vr) (Max) | 1000V (1kV) |
Voltage - Forward (Vf) (Max) @ If | 1.3V @ 1A |