IRF634STRLPBF
8.1 A, 250 V, 0.45 ohm, N-CHANNEL, Si, POWER, MOSFET

From Vishay Presicion Group

StatusACTIVE
Avalanche Energy Rating (Eas)300 mJ
Case ConnectionDRAIN
Channel TypeN-CHANNEL
ConfigurationSINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min250 V
Drain Current-Max (ID)8.1 A
Drain-source On Resistance-Max0.4500 ohm
EU RoHS CompliantYes
FET TechnologyMETAL-OXIDE SEMICONDUCTOR
Lead FreeYes
Mfr Package DescriptionLEAD FREE, PLASTIC, SMD-220, D2PAK-3
Number of Elements1
Number of Terminals2
Operating ModeENHANCEMENT
Package Body MaterialPLASTIC/EPOXY
Package ShapeRECTANGULAR
Package StyleSMALL OUTLINE
Pulsed Drain Current-Max (IDM)32 A
Surface MountYes
Terminal FinishMATTE TIN
Terminal FormGULL WING
Terminal PositionSINGLE
Transistor ApplicationSWITCHING
Transistor Element MaterialSILICON
Transistor TypeGENERAL PURPOSE POWER

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