1N6483-E3/96 DIODE GEN PURP 800V 1A DO213AB
From Vishay Semiconductor Diodes Division
| Capacitance @ Vr, F | 8pF @ 4V, 1MHz |
| Category | Discrete Semiconductor Products |
| Current - Average Rectified (Io) | 1A |
| Current - Reverse Leakage @ Vr | 10µA @ 800V |
| Datasheets | 1N6478 thru 1N6484 Packaging Information |
| Diode Type | Standard |
| Family | Diodes, Rectifiers - Single |
| Mounting Type | Surface Mount |
| Operating Temperature - Junction | -65°C ~ 175°C |
| Package / Case | DO-213AB, MELF (Glass) |
| Packaging | Tape & Reel (TR) |
| Product Photos | DO-213AB |
| Reverse Recovery Time (trr) | - |
| Series | SUPERECTIFIER® |
| Speed | Standard Recovery >500ns, > 200mA (Io) |
| Standard Package | 1,500 |
| Supplier Device Package | DO-213AB |
| Voltage - DC Reverse (Vr) (Max) | 800V |
| Voltage - Forward (Vf) (Max) @ If | 1.1V @ 1A |
