VN0104N5 N-Channel Enhancement MOSFET
From Various
Status | Discontinued |
@(VDS) (V) (Test Condition) | 20 |
@Freq. (Hz) (Test Condition) | 1.0M |
@I(D) (A) (Test Condition) | 500m |
@Pulse Width (s) (Condition) | 300u |
@Temp (°C) (Test Condition) | 25 |
@V(DS) (V) (Test Condition) | 25 |
@V(GS) (V) (Test Condition) | 5.0 |
Absolute Max. Power Diss. (W) | 15 |
C(iss) Max. (F) | 65p |
I(D) Abs. Drain Current (A) | 1.5 |
I(DM) Max (A)(@25°C) | 2.5 |
I(DSS) Max. (A) | 1.0u |
I(GSS) Max. (A) | 100n |
Military | N |
Package | TO-220AB |
Thermal Resistance Junc-Amb. | 70 |
V(BR)DSS (V) | 40 |
V(BR)GSS (V) | 20 |
V(GS)th Max. (V) | 2.4 |
V(GS)th Min. (V) | .8 |
g(fs) Max, (S) Trans. conduct, | 450m |
g(fs) Min. (S) Trans. conduct. | 300m |
r(DS)on Max. (Ohms) | 5.0 |
t(d)off Max. (s) Off time | 9.0n |
t(f) Max. (s) Fall time. | 8.0n |
t(r) Max. (s) Rise time | 8.0n |
td(on) Max (s) On time delay | 5.0n |