VN0104N5
N-Channel Enhancement MOSFET

From Various

StatusDiscontinued
@(VDS) (V) (Test Condition)20
@Freq. (Hz) (Test Condition)1.0M
@I(D) (A) (Test Condition)500m
@Pulse Width (s) (Condition)300u
@Temp (°C) (Test Condition)25
@V(DS) (V) (Test Condition)25
@V(GS) (V) (Test Condition)5.0
Absolute Max. Power Diss. (W)15
C(iss) Max. (F)65p
I(D) Abs. Drain Current (A)1.5
I(DM) Max (A)(@25°C)2.5
I(DSS) Max. (A)1.0u
I(GSS) Max. (A)100n
MilitaryN
PackageTO-220AB
Thermal Resistance Junc-Amb.70
V(BR)DSS (V)40
V(BR)GSS (V)20
V(GS)th Max. (V)2.4
V(GS)th Min. (V).8
g(fs) Max, (S) Trans. conduct,450m
g(fs) Min. (S) Trans. conduct.300m
r(DS)on Max. (Ohms)5.0
t(d)off Max. (s) Off time9.0n
t(f) Max. (s) Fall time.8.0n
t(r) Max. (s) Rise time8.0n
td(on) Max (s) On time delay5.0n

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