TN632-04 Silicon Controlled Rectifier
From Various
| @I(T) (A) (Test Condition) | 1.5k |
| @Temp. (°C) (Test Condition) | 125 |
| I(D) Max. (A) Leakage Current | 30m |
| I(GT) Max. (A) | 200m |
| I(H) Max.(A) Holding Current | 70m |
| I(T) Max.(A) On-state Current | 700² |
| I(TSM) Max. (A) | 9.0k |
| Military | N |
| Package | TO-200AC |
| V(DRM) Max.(V)Rep.Pk.Off Volt. | 400 |
| V(GT) Max.(V) | 3.0 |
| V(T) Max. (V) | 2.2 |
| dv/dt Min. (V/us) | 300 |
| t(q) Typ. (s) | 125u |
