FS3SM18A
N-Channel Enhancement MOSFET

From Various

@(VDS) (V) (Test Condition)10
@Freq. (Hz) (Test Condition)1.0M
@I(D) (A) (Test Condition)1.5
@Temp (°C) (Test Condition)25
@V(DS) (V) (Test Condition)25
@V(GS) (V) (Test Condition)10
Absolute Max. Power Diss. (W)100
C(iss) Max. (F)770p
I(D) Abs. Drain Current (A)3.0
I(DM) Max (A)(@25°C)9.0
I(DSS) Max. (A)1.0m
I(GSS) Max. (A)10u
MilitaryN
PackageSOT-186
V(BR)DSS (V)900
V(BR)GSS (V)30
V(GS)th Max. (V)4.0
V(GS)th Min. (V)2.0
r(DS)on Max. (Ohms)4.0
t(d)off Max. (s) Off time90n
t(f) Max. (s) Fall time.25n
t(r) Max. (s) Rise time15n
td(on) Max (s) On time delay15n

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