2N1671B
PN (N-Type Base) Unijunction Transistor

From Various

Absolute Max. Power Diss. (W)450m
I(E) Max. (A)50m
I(P) Max. (A)6.0u
I(V) Min. (A)8.0m
Intrinsic Standoff Ratio (Max)0.62
Intrinsic Standoff Ratio (Min)0.47
MilitaryN
PackageTO-5
V(B2B1) Max. (V)35
r(BBO) Max. (ê)9.1k
r(BBO) Min. (ê)4.7k

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