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{"Terminal Finish":"TIN LEAD","Terminal Form":"THROUGH-HOLE","Operating Temperature-Max":"150 Cel","Qualification Status":"COMMERCIAL","JESD-609 Code":"e0","Package Shape":"ROUND","Status":"Discontinued","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.2500 A","Feedback Cap-Max (Crss)":"8 pF","Sub Category":"Other Transistors","Peak Reflow Temperature (Cel)":"NOT SPECIFIED","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Ma...

{"Terminal Form":"THROUGH-HOLE","Power Dissipation Ambient-Max":"1 W","Operating Temperature-Max":"150 Cel","Qualification Status":"COMMERCIAL","Package Shape":"ROUND","Status":"Discontinued","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.2500 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"12 ohm","JESD-30 Code":"O-PBCY-T3","DS Breakdown Voltage-Min":"100 V","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Transist...

{"Terminal Form":"THROUGH-HOLE","Power Dissipation Ambient-Max":"1 W","Operating Temperature-Max":"150 Cel","Qualification Status":"COMMERCIAL","Package Shape":"ROUND","Status":"Discontinued","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.2500 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"12 ohm","JESD-30 Code":"O-PBCY-T3","DS Breakdown Voltage-Min":"100 V","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Transist...

{"Terminal Form":"THROUGH-HOLE","Qualification Status":"COMMERCIAL","Package Shape":"ROUND","Status":"Discontinued","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.2500 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"12 ohm","JESD-30 Code":"O-PBCY-T3","DS Breakdown Voltage-Min":"100 V","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Transistor Application":"SWITCHING","Surface Mount":"NO","Operating Mode":"ENHANCEME...

{"Terminal Form":"THROUGH-HOLE","Power Dissipation Ambient-Max":"1 W","Operating Temperature-Max":"150 Cel","Qualification Status":"COMMERCIAL","Package Shape":"ROUND","Status":"Discontinued","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.2500 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"12 ohm","JESD-30 Code":"O-PBCY-T3","DS Breakdown Voltage-Min":"100 V","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Transist...

{"Terminal Form":"THROUGH-HOLE","Power Dissipation Ambient-Max":"1 W","Operating Temperature-Max":"150 Cel","Qualification Status":"COMMERCIAL","Package Shape":"ROUND","Status":"Discontinued","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.2500 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"12 ohm","JESD-30 Code":"O-PBCY-T3","DS Breakdown Voltage-Min":"100 V","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Transist...

{"Terminal Form":"THROUGH-HOLE","Power Dissipation Ambient-Max":"1 W","Operating Temperature-Max":"150 Cel","Qualification Status":"COMMERCIAL","Package Shape":"ROUND","Status":"Discontinued","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.2500 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"12 ohm","JESD-30 Code":"O-PBCY-T3","DS Breakdown Voltage-Min":"100 V","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Transist...

{"Terminal Form":"THROUGH-HOLE","Power Dissipation Ambient-Max":"1 W","Operating Temperature-Max":"150 Cel","Qualification Status":"COMMERCIAL","Package Shape":"ROUND","Status":"Discontinued","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.2500 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"12 ohm","JESD-30 Code":"O-PBCY-T3","DS Breakdown Voltage-Min":"100 V","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Transist...

{"Terminal Form":"THROUGH-HOLE","Power Dissipation Ambient-Max":"1 W","Operating Temperature-Max":"150 Cel","Qualification Status":"COMMERCIAL","Package Shape":"ROUND","Status":"Discontinued","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.2500 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"12 ohm","JESD-30 Code":"O-PBCY-T3","DS Breakdown Voltage-Min":"100 V","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Transist...

{"Terminal Form":"THROUGH-HOLE","Power Dissipation Ambient-Max":"1 W","Operating Temperature-Max":"150 Cel","Qualification Status":"COMMERCIAL","Package Shape":"ROUND","Status":"Discontinued","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.2500 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"12 ohm","JESD-30 Code":"O-PBCY-T3","DS Breakdown Voltage-Min":"100 V","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Transist...

{"Terminal Form":"THROUGH-HOLE","Power Dissipation Ambient-Max":"1 W","Operating Temperature-Max":"150 Cel","Qualification Status":"COMMERCIAL","Package Shape":"ROUND","Status":"Discontinued","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.2500 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"12 ohm","JESD-30 Code":"O-PBCY-T3","DS Breakdown Voltage-Min":"100 V","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Transist...