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VP1310N8 Transistors P-Channel Enhancement MOSFET Military/High-RelN V(BR)DSS (V)100 V(BR)GSS (V)20 I(D) Max. (A) I(DM) Max. (A) Pulsed I(D)200m @Temp (oC)150o IDM Max (@25oC Amb)700m @Pulse Width (s) (Condition)300u Absolute Max. Power Diss. (W)1.6# Minimum Operating Temp (oC)-55 Maximum Operating Temp (oC)150 Thermal Resistance Junc-Case15 Thermal Resistance Junc-Amb.78 V(GS)th Max. (V)3.5 V(GS)th (V) (Min)1.5 @(VDS) (V) (Test Condition)20 @I(D) (A) (Test Condition)1.0m I(DSS) Max. (A)10u @V(DS) (V) (Test Condition)100 @Temp (oC) (Test Condition)25 I(GSS) Max. (A)100n
VP1306 VP1310 P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVDSS / RDS(ON) ID(ON) Order Number / Package BVDGS (max) (min) TO-243AA* TO-39 TO-92 -40V 25 -0.25A -- VP1304N2 VP1304N3 -60V 25 -0.25A -- VP1306N2 VP1306N3 -100V 25 -0.25A VP1310N8 VP1310N2 VP1310N3 *Same as SOT-89. For carrier tape reels specify P023 for 1,000 units or P024 for 2,000 units. Advanced DMOS Technology Features Free from secondary breakdown These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex's well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally-induced secondary breakdown. Low power drive requirement Ease of paralleling Low CISS and fast switching speeds Excellent thermal stabili
VP1310N8 VP1310N2 VP1310N3 *Same as SOT-89. For carrier tape reels specify P023 for 1,000 units or P024 for 2,000 units. Features Free from secondary breakdown Low power drive requirement Ease of paralleling Low Cigg and fast switching speeds Excellent thermal stability Integral Source-Drain diode High input impedance and high gain OOOOORO0 Complementary N- and P-channel devices Applications Motor control Converters Amplifiers Switches Power supply circuits O O O O O O Drivers (relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc.) Absolute Maximum Ratings Drain-to-Source Voltage BVoss Drain-to-Gate Voltage BVpgs Gate-to-Source Voltage + 20V Operating and Storage Temperature -58C to +150C Soldering Temperature 300C * Distance of 1.6 mm from case for 10 seconds. 9-37 Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertexs well-proven silicon-gate manufacturing process. This combination produces devices wi
D 103 VP1304N3 129 DN2535N2 28 TN2124K1 61 TP2510N8 103 VP1306N2 129 DN2535N3 28 TN2501N8 63 TP2510ND 103 VP1306N3 129 DN2535N5 28 TN2501ND 63 TP2516ND 107 VP1310N2 129 DN2535ND 28 TN2502ND 67 TP2520N8 107 VP1310N3 129 DN2540N2 28 TN2504N8 67 TP2520ND 107 VP1310N8 129 DN2540N3 28 TN2504ND 67 TP2535N3 111 VP2110K1 133 DN2540N5 28 TN2506ND 71 TP2535ND 111 VP3203N3 137 DN2540N8 28 TN2510N8 71 TP2540N3 111 VP3203N8 137 DN2540ND 28 TN2510ND 71 TP2540N8 111 VP3203ND 137 HT0440LG 30 TN2520ND 75 TP2540ND 111 HT0440N4 30 TN2524N8 75 TP2635LG 115 LND150N3 34 TN2524ND 75 TP2635N3 115 LND150N8 34 TN2535ND 79 TP2635ND 115 LND150ND 34 TN2540N8 79 TP2640LG 115 LP0701LG 38 TN2540ND 79 TP2640N3 115 LPO701N3 38 TPO102N2 83 TP2640ND 115 LPO701ND 38 TPO102N3 83 VN1304N2 117 TCO604WG 42 TP0102ND 83 VN1304N3 117 TD9944TG 43 TPO104N2 83 VN1306N2 117 TNO102N2 47 TPO104N3 83 VN1306N3 17 TNO102N3 47 TPO104N8 83 VN1310N2 117 TNO102ND 47 TPO104ND 83 VN1310N3 117 TNO104N2 47 TPO604WG 87 VN1310N8 117 TNO104N3 47 TPO610T 91 VN
ncement-Mode Vertical DMOS FETs Ordering Information Standard Commercial Devices BVpss / Rosion) Ip(ony Order Number / Package BVoas (max) (min) TO-243AA* TO-39 TO-92 -40V 250 -0.25A _ VP1304N2 VP1304N3 -60V 252 -0.25A _ VP1306N2 VP1306N3 -100V 260 -0.25A VP1310N8 VP1310N2 VP1310N3 *Same as SOT-89. Features Advanced DMOS Technology Free from secondary breakdown Low power drive requirement Ease of paralteling Low Cygg and fast switching speeds Excellent thermal stability Integral Source-Drain diode High input impedance and high gain OOC0RoO00 Complementary N- and P-channel devices Applications Motor control Converters Amplifiers Switches Power supply circuits DOoOOOD Drivers (relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc.) Absolute Maximum Ratings Drain-to-Source Voltage BVpss Drain-to-Gate Voltage BVogs Gate-to-Source Voltage +20V Operating and Storage Temperature -55C to +150C Soldering Temperature* 300C * Distance of 1.6 mm from case for 10 seconds. 129 These e
Supertex inc. P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVpgss / Rosion) Ibyon) Order Number / Package BVogs (max) (min) TO-243AA* TO-39 TO-92 -40V 252 -0.25A _ VP1304N2 VP1304N3 -60V 250 -0.25A VP1306N2 VP13G6N3 -100V 252 -0.25A VP1310N8 VP1310N2 VP1310N3 *Same as SOT-89. For carrier tape reels specity P023 for 1,000 units or PO24 for 2,000 units. Features Advanced DMOS Technology ( Free from secondary breakdown These enhancement-mode (normaily-off) transistors utilize a : : vertical DMOS structure and Supertexs well-proven silicon-gate L)_ Low power drive requirement manufacturing process. This combination produces devices with L] Ease of paralleling the power handling capabilities of bipolar transistors and with the [1 Low Cicg and fast switching speeds high input impedance and positive temperature coefficient inher- Iss ' ent in MOS devices. Characteristic of all MOS structures, these L) Excellent therrnal stability devices are free from thermal runaway and thermally