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Supertex.com/VP0535N3P008
{"Terminal Form":"THROUGH-HOLE","Power Dissipation Ambient-Max":"1 W","Operating Temperature-Max":"150 Cel","Qualification Status":"COMMERCIAL","Package Shape":"ROUND","Status":"Discontinued","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.1000 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"75 ohm","JESD-30 Code":"O-PBCY-T3","DS Breakdown Voltage-Min":"350 V","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Transisto...
1518 Bytes - 00:38:20, 23 November 2024
Documentation and Support
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| File Name | File Size (MB) | Document | MOQ | Support |
|---|---|---|---|---|
| 1BP008_11014_001_4F_DWG.pdf | 0.12 | 1 | Request | |
| 7GSP008628R0006.pdf | 0.14 | 1 | Request | |
| 7B6JP00800.pdf | 0.04 | 1 | Request | |
| 7GSP008989R0006.pdf | 0.14 | 1 | Request | |
| 7GSP008377R0006.pdf | 0.08 | 1 | Request | |
| 7GSP008530R0006.pdf | 0.15 | 1 | Request | |
| 7GSP008785R0006.pdf | 0.14 | 1 | Request | |
| 7GSP008838R0006.pdf | 0.14 | 1 | Request | |
| 7GSP008880R0006.pdf | 0.14 | 1 | Request | |
| 7GSP008759R0006.pdf | 0.14 | 1 | Request | |
| 7GSP008795R0006.pdf | 0.14 | 1 | Request | |
| 7GSP008555R0006.pdf | 0.15 | 1 | Request |
