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Supertex.com/VP0535N3P006
{"Terminal Form":"THROUGH-HOLE","Power Dissipation Ambient-Max":"1 W","Operating Temperature-Max":"150 Cel","Qualification Status":"COMMERCIAL","Package Shape":"ROUND","Status":"Discontinued","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.1000 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"75 ohm","JESD-30 Code":"O-PBCY-T3","DS Breakdown Voltage-Min":"350 V","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Transisto...
1518 Bytes - 18:58:09, 14 March 2025
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| PDF23P0060P8WN.pdf | 0.04 | 1 | Request |
