Product Details Search Results:

Supertex.com/VN2110N3
{"Terminal Finish":"TIN LEAD","Terminal Form":"THROUGH-HOLE","Qualification Status":"COMMERCIAL","JESD-609 Code":"e0","Package Shape":"ROUND","Status":"Discontinued","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.2500 A","Feedback Cap-Max (Crss)":"5 pF","Peak Reflow Temperature (Cel)":"NOT SPECIFIED","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"4 ohm","Moisture Sensitivity Level":"NOT SPECIFIED","DS Breakdown Volt...
1611 Bytes - 20:11:46, 17 November 2024
Supertex.com/VN2110N3P001
{"Terminal Form":"THROUGH-HOLE","Power Dissipation Ambient-Max":"1 W","Qualification Status":"COMMERCIAL","Package Shape":"ROUND","Status":"Discontinued","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.2500 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"4 ohm","JESD-30 Code":"O-PBCY-T3","DS Breakdown Voltage-Min":"100 V","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Transistor Application":"SWITCHING","Surface Mou...
1475 Bytes - 20:11:46, 17 November 2024
Supertex.com/VN2110N3P002
{"Terminal Form":"THROUGH-HOLE","Power Dissipation Ambient-Max":"1 W","Qualification Status":"COMMERCIAL","Package Shape":"ROUND","Status":"Discontinued","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.2500 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"4 ohm","JESD-30 Code":"O-PBCY-T3","DS Breakdown Voltage-Min":"100 V","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Transistor Application":"SWITCHING","Surface Mou...
1476 Bytes - 20:11:46, 17 November 2024
Supertex.com/VN2110N3P003
{"Terminal Form":"THROUGH-HOLE","Qualification Status":"COMMERCIAL","Package Shape":"ROUND","Status":"Discontinued","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.2500 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"4 ohm","JESD-30 Code":"O-PBCY-T3","DS Breakdown Voltage-Min":"100 V","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Transistor Application":"SWITCHING","Surface Mount":"NO","Operating Mode":"ENHANCEMENT...
1435 Bytes - 20:11:46, 17 November 2024
Supertex.com/VN2110N3P004
{"Terminal Form":"THROUGH-HOLE","Power Dissipation Ambient-Max":"1 W","Qualification Status":"COMMERCIAL","Package Shape":"ROUND","Status":"Discontinued","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.2500 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"4 ohm","JESD-30 Code":"O-PBCY-T3","DS Breakdown Voltage-Min":"100 V","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Transistor Application":"SWITCHING","Surface Mou...
1474 Bytes - 20:11:46, 17 November 2024
Supertex.com/VN2110N3P005
{"Terminal Form":"THROUGH-HOLE","Power Dissipation Ambient-Max":"1 W","Qualification Status":"COMMERCIAL","Package Shape":"ROUND","Status":"Discontinued","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.2500 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"4 ohm","JESD-30 Code":"O-PBCY-T3","DS Breakdown Voltage-Min":"100 V","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Transistor Application":"SWITCHING","Surface Mou...
1474 Bytes - 20:11:46, 17 November 2024
Supertex.com/VN2110N3P006
{"Terminal Form":"THROUGH-HOLE","Power Dissipation Ambient-Max":"1 W","Qualification Status":"COMMERCIAL","Package Shape":"ROUND","Status":"Discontinued","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.2500 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"4 ohm","JESD-30 Code":"O-PBCY-T3","DS Breakdown Voltage-Min":"100 V","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Transistor Application":"SWITCHING","Surface Mou...
1476 Bytes - 20:11:46, 17 November 2024
Supertex.com/VN2110N3P007
{"Terminal Form":"THROUGH-HOLE","Power Dissipation Ambient-Max":"1 W","Qualification Status":"COMMERCIAL","Package Shape":"ROUND","Status":"Discontinued","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.2500 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"4 ohm","JESD-30 Code":"O-PBCY-T3","DS Breakdown Voltage-Min":"100 V","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Transistor Application":"SWITCHING","Surface Mou...
1474 Bytes - 20:11:46, 17 November 2024
Supertex.com/VN2110N3P008
{"Terminal Form":"THROUGH-HOLE","Power Dissipation Ambient-Max":"1 W","Qualification Status":"COMMERCIAL","Package Shape":"ROUND","Status":"Discontinued","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.2500 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"4 ohm","JESD-30 Code":"O-PBCY-T3","DS Breakdown Voltage-Min":"100 V","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Transistor Application":"SWITCHING","Surface Mou...
1476 Bytes - 20:11:46, 17 November 2024
Supertex.com/VN2110N3P011
{"Terminal Form":"THROUGH-HOLE","Power Dissipation Ambient-Max":"1 W","Qualification Status":"COMMERCIAL","Package Shape":"ROUND","Status":"Discontinued","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.2500 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"4 ohm","JESD-30 Code":"O-PBCY-T3","DS Breakdown Voltage-Min":"100 V","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Transistor Application":"SWITCHING","Surface Mou...
1474 Bytes - 20:11:46, 17 November 2024
Supertex.com/VN2110N3P012
{"Terminal Form":"THROUGH-HOLE","Power Dissipation Ambient-Max":"1 W","Qualification Status":"COMMERCIAL","Package Shape":"ROUND","Status":"Discontinued","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.2500 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"4 ohm","JESD-30 Code":"O-PBCY-T3","DS Breakdown Voltage-Min":"100 V","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Transistor Application":"SWITCHING","Surface Mou...
1474 Bytes - 20:11:46, 17 November 2024
Supertex.com/VN2110N3P013
{"Terminal Form":"THROUGH-HOLE","Power Dissipation Ambient-Max":"1 W","Qualification Status":"COMMERCIAL","Package Shape":"ROUND","Status":"Discontinued","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.2500 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"4 ohm","JESD-30 Code":"O-PBCY-T3","DS Breakdown Voltage-Min":"100 V","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Transistor Application":"SWITCHING","Surface Mou...
1475 Bytes - 20:11:46, 17 November 2024

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