Product Datasheet Search Results:
- VN1310N3
- Supertex, Inc.
- N-Channel Enhancement-Mode Vertical DMOS FETs
Product Details Search Results:
Supertex.com/VN1310N3
{"Terminal Finish":"TIN LEAD","Terminal Form":"THROUGH-HOLE","Power Dissipation Ambient-Max":"1 W","Operating Temperature-Max":"150 Cel","Qualification Status":"COMMERCIAL","JESD-609 Code":"e0","Package Shape":"ROUND","Additional Feature":"HIGH INPUT IMPEDANCE","Status":"Discontinued","Package Style":"CYLINDRICAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.2500 A","Feedback Cap-Max (Crss)":"5 pF","Sub Category":"FET General Purpose Power","Peak Reflow Temperature (Cel)":"NOT SPECIFI...
1851 Bytes - 23:30:02, 29 September 2024
Supertex.com/VN1310N3P001
{"Terminal Form":"THROUGH-HOLE","Power Dissipation Ambient-Max":"1 W","Operating Temperature-Max":"150 Cel","Qualification Status":"COMMERCIAL","Package Shape":"ROUND","Status":"Discontinued","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.2500 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"8 ohm","JESD-30 Code":"O-PBCY-T3","DS Breakdown Voltage-Min":"100 V","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Transisto...
1517 Bytes - 23:30:02, 29 September 2024
Supertex.com/VN1310N3P002
{"Terminal Form":"THROUGH-HOLE","Power Dissipation Ambient-Max":"1 W","Operating Temperature-Max":"150 Cel","Qualification Status":"COMMERCIAL","Package Shape":"ROUND","Status":"Discontinued","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.2500 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"8 ohm","JESD-30 Code":"O-PBCY-T3","DS Breakdown Voltage-Min":"100 V","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Transisto...
1517 Bytes - 23:30:02, 29 September 2024
Supertex.com/VN1310N3P003
{"Terminal Form":"THROUGH-HOLE","Power Dissipation Ambient-Max":"1 W","Operating Temperature-Max":"150 Cel","Qualification Status":"COMMERCIAL","Package Shape":"ROUND","Additional Feature":"HIGH INPUT IMPEDANCE","Status":"Discontinued","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.2500 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"8 ohm","Feedback Cap-Max (Crss)":"5 pF","DS Breakdown Voltage-Min":"100 V","FET ...
1560 Bytes - 23:30:02, 29 September 2024
Supertex.com/VN1310N3P004
{"Terminal Form":"THROUGH-HOLE","Power Dissipation Ambient-Max":"1 W","Operating Temperature-Max":"150 Cel","Qualification Status":"COMMERCIAL","Package Shape":"ROUND","Status":"Discontinued","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.2500 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"8 ohm","JESD-30 Code":"O-PBCY-T3","DS Breakdown Voltage-Min":"100 V","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Transisto...
1519 Bytes - 23:30:02, 29 September 2024
Supertex.com/VN1310N3P005
{"Terminal Form":"THROUGH-HOLE","Power Dissipation Ambient-Max":"1 W","Operating Temperature-Max":"150 Cel","Qualification Status":"COMMERCIAL","Package Shape":"ROUND","Status":"Discontinued","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.2500 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"8 ohm","JESD-30 Code":"O-PBCY-T3","DS Breakdown Voltage-Min":"100 V","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Transisto...
1518 Bytes - 23:30:02, 29 September 2024
Supertex.com/VN1310N3P006
{"Terminal Form":"THROUGH-HOLE","Power Dissipation Ambient-Max":"1 W","Operating Temperature-Max":"150 Cel","Qualification Status":"COMMERCIAL","Package Shape":"ROUND","Status":"Discontinued","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.2500 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"8 ohm","JESD-30 Code":"O-PBCY-T3","DS Breakdown Voltage-Min":"100 V","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Transisto...
1517 Bytes - 23:30:02, 29 September 2024
Supertex.com/VN1310N3P007
{"Terminal Form":"THROUGH-HOLE","Power Dissipation Ambient-Max":"1 W","Operating Temperature-Max":"150 Cel","Qualification Status":"COMMERCIAL","Package Shape":"ROUND","Status":"Discontinued","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.2500 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"8 ohm","JESD-30 Code":"O-PBCY-T3","DS Breakdown Voltage-Min":"100 V","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Transisto...
1519 Bytes - 23:30:02, 29 September 2024
Supertex.com/VN1310N3P008
{"Terminal Form":"THROUGH-HOLE","Power Dissipation Ambient-Max":"1 W","Operating Temperature-Max":"150 Cel","Qualification Status":"COMMERCIAL","Package Shape":"ROUND","Status":"Discontinued","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.2500 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"8 ohm","JESD-30 Code":"O-PBCY-T3","DS Breakdown Voltage-Min":"100 V","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Transisto...
1519 Bytes - 23:30:02, 29 September 2024
Supertex.com/VN1310N3P011
{"Terminal Form":"THROUGH-HOLE","Power Dissipation Ambient-Max":"1 W","Operating Temperature-Max":"150 Cel","Qualification Status":"COMMERCIAL","Package Shape":"ROUND","Status":"Discontinued","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.2500 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"8 ohm","JESD-30 Code":"O-PBCY-T3","DS Breakdown Voltage-Min":"100 V","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Transisto...
1519 Bytes - 23:30:02, 29 September 2024
Supertex.com/VN1310N3P012
{"Terminal Form":"THROUGH-HOLE","Power Dissipation Ambient-Max":"1 W","Operating Temperature-Max":"150 Cel","Qualification Status":"COMMERCIAL","Package Shape":"ROUND","Status":"Discontinued","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.2500 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"8 ohm","JESD-30 Code":"O-PBCY-T3","DS Breakdown Voltage-Min":"100 V","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Transisto...
1516 Bytes - 23:30:02, 29 September 2024