Product Details Search Results:

Supertex.com/VN0660N3P006
{"Terminal Form":"THROUGH-HOLE","Power Dissipation Ambient-Max":"1 W","Operating Temperature-Max":"150 Cel","Qualification Status":"COMMERCIAL","Package Shape":"ROUND","Status":"Discontinued","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.1500 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"20 ohm","JESD-30 Code":"O-PBCY-T3","DS Breakdown Voltage-Min":"600 V","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Transisto...
1521 Bytes - 07:08:52, 17 November 2024

Documentation and Support

Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:

File NameFile Size (MB)DocumentMOQSupport
Y-P006A.pdf3.071Request
I-P006A.pdf3.071Request
CT-P006.pdf3.071Request
1BP006_29131_001_4F_DWG.pdf0.091Request
1BP006_29241_4F_DWG.pdf0.251Request
1BP006_29240_4F_DWG.pdf0.091Request
1BP006_29131_4F_DWG.pdf0.251Request
1BP006_29241_001_4F_DWG.pdf0.091Request
7GSP006491R0006.pdf0.071Request
7GSP006807R0006.pdf0.071Request
7GSP006442R0006.pdf0.071Request
7GSP006231R0006.pdf0.101Request