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Supertex.com/VN0655N3P007
{"Terminal Form":"THROUGH-HOLE","Power Dissipation Ambient-Max":"1 W","Operating Temperature-Max":"150 Cel","Qualification Status":"COMMERCIAL","Package Shape":"ROUND","Status":"Discontinued","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"0.1500 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"20 ohm","JESD-30 Code":"O-PBCY-T3","DS Breakdown Voltage-Min":"550 V","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Transisto...
1516 Bytes - 05:09:09, 17 November 2024
Documentation and Support
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| 1BP007_29420_4F_DWG.pdf | 0.08 | 1 | Request | |
| 7GSP007272R0006.pdf | 0.07 | 1 | Request | |
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| 7GSP007351R0006.pdf | 0.07 | 1 | Request |
